Super Low Stress Nitride on Silicon

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New Nitride Services:

 

PECVD Nitride


PECVD Oxide


PECVD OxyNitride


PECVD Low Stress Nitride


PECVD Silicon Carbide


PECVD Carbon Doped Oxide

 

 

 


Low Stress Nitride on Silicon

 

retains all of the same benefits associated with our standard nitride but can also be used for Membranes, Cantilever Beams and other mechanical structures associated with MEMS devices.

 

Stoichiometric LPCVD Nitride

 

Our Standard nitride film works great as hard mask for KOH etching and can be used as a tool for defining active regions during field oxidation.

 

Stoichiometric nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance. Silicon Nitride is produced in three main types; Reaction Bonded Silicon Nitride (RBSN), Hot Pressed Silicon Nitride (HPSN) and Sintered Silicon Nitride (SSN). We have Silicon Nitride 2" - 12" all specs and quanities.

 

Our Low Stress Nitride

 

retains all of the same benefits associated with our standard nitride but can also be used for Membranes, Cantilever Beams and other mechanical structures associated with MEMS devices.

 

Our Super low stress nitride:

 

has been developed for applications that require extremely low film stress. Film Stress can also be customized to meet your unique specifications.

 

Our PECVD Nitride is a single sided film that has been optimized for wafers requiring minimal thermal processing.  Because PECVD Nitride is deposited at low temperatures, it offers greater flexibility and can be deposited over any of our other thin films. 

  • Wafers Sizes up to 300mm
  • Capable of handling custom substrate shapes, sizes and materials
  • Thickness up to 2µm
  • Tolerance: +/- 7% or better
  • Film Stress: 600MPa Tensile
  • Refractive Index: 2.00
  • Temperature: 350C

 


Our PECVD OxyNitride is a single sided film that has been optimized for wafers requiring minimal thermal processing.  Because PECVD OxyNitride is deposited at low temperatures, it offers greater flexibility and can be deposited over any of our other thin films. 

  • Wafers Sizes up to 300mm
  • Capable of handling custom substrate shapes, sizes and materials
  • Thickness up to 2µm
  • Tolerance: +/- 7% or better
  • Film Stress: Variable
  • Refractive Index: 1.5-1.9 (Per customer request)
  • Temperature: 350C

Our Low Stress PECVD Nitride is a single sided film that has been optimized for wafers requiring minimal thermal processing.  Because Low Stress PECVD Nitride is deposited at low temperatures, it offers greater flexibility and can be deposited over any of our other thin films. 

  • Wafers Sizes up to 300mm
  • Capable of handling custom substrate shapes, sizes and materials
  • Thickness up to 2µm
  • Tolerance: +/- 7% or better
  • Film Stress: <250MPa
  • Refractive Index: 2.00
  • Temperature: 350C

Our PECVD Oxide is a single sided film that has been optimized for wafers requiring minimal thermal processing.  Because PECVD is a deposited oxide, it offers greater flexibility than thermal oxide and can be deposited over any of our other thin films. 

  • Wafers Sizes up to 300mm
  • Capable of handling custom substrate shapes, sizes and materials
  • Thickness up to 2µm
  • Tolerance: +/- 7% or better
  • Film Stress: 400MPa Compressive
  • Refractive Index: 1.46
  • Temperature: 350C

PECVD Silicon Carbide for wafers requiring minimal thermal processing.  Because PECVD Silicon Carbide is deposited at low temperatures, it offers greater flexibility and can be deposited over any of our other thin films

  • Wafers Sizes up to 300mm
  • Capable of handling custom substrate shapes, sizes and materials
  • Thickness up to 2um
  • Tolerance: +/- 7% or better
  • Film Stress: <100MPa
  • Refractive Index: 2.73
  • Temperature: 350C