Gallium Nitride

Gallium Nitride Nitride Thermal Oxide Pyrex Fused Silica Quartz Germanium Zinc Gallium Nitride Gallium Arsenide Sapphire Glass Indium Phosphide





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Gallium Nitride Wafers and Aluminum Nitride

GaN on Sapphire UniversityWafer.com Email chris@universitywafer.com
50.8mm 430um SSP c-plane 0001	<5	<10	10 or more	20 or more

un-doped GaN template ~2.0 ㎛	$ 195.60	$ 185.82	$ 176.04	$ 166.26
un-doped GaN template ~4.5 ㎛	$ 244.50	$ 232.28	$ 220.05	$ 207.83
n-doped GaN template ~4.5 ㎛	$ 244.50	$ 232.28	$ 220.05	$ 207.83
p-doped GaN template ~2.0 ㎛	$ 374.90	$ 356.16	$ 337.41	$ 318.67
p-doped GaN template ~3.0 ㎛	$ 733.50	$ 696.83	$ 660.15	$ 623.48

Specs!

GaN epitaxial wafers consist of GaN layer on 6H-SiC substrate. 50 mm diam on axis, n-type, GaN thickness ~0.5 um
GaN layer on sapphire, 50mm diameter on-axis, n-type, GaN thickness 0.5-10 um.
GaN/AIN/SiC epitaxial wafer consisting of GaN layer on AIN layer on 6H silicon carbide. 50mm in diameter on-axis, n-type. GaN thickness ~(0.5-0.8) um. AIN thickness ~0.1um.
GaN/AIN/AI2O3 epitaxial wafer consists of GaN layer on AIN layer on sapphire. 50mm in diameter, on-axis, n-type, GaN thickness ~(0.5-0.8) um, AIN thickness ~0.1 um.