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SOI Wafers
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Al2O3
SSP & DSP
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Silicon wafers

Gallium Antimonide

SOI Wafers

GaAs

Gallium Phosphide

Gallium Nitride

Germanium

Indium Phosphide

Thin Silicon

Zinc Oxide

SiC - Silicon Carbide

Thermal Oxide

Wafers In Stock & Ready to Ship

Metal Deposition * Nitride * Fused Silica * Quartz * Float Zone * Pyrex * Ultra-Thin & Flat Silicon
Gallium Phosphide

Gallium Phosphide wafers always in stock

Gallium Phosphide Special $55.00 each

50mm N/Si (100)
Orientation: 100 2 degrees off cut Resistivity: .05 ohm/cm
Primary Flat Length: 0.67"
Secondary Flat: 0.28"
Primary Flat Misalignment: 0.24 degree
Hall Mobility: 116
Carrier Concentration: 48-140 X10E16cm3
Thickness: 10-13 mils
Single Side Polished

Name
Organization
Email
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Wafer
Diameter
Type  N       or        P
Orientation
Resistivity
Dopant
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Sides Polished  One-Side     Two-Side
Quantity
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Lot #

Size

Specs

CW1029

50.8 mm x 300 um

N/S (111) cc= 2-2.5 x 1017, EPD < 2 x 105 2 pol EPI

CW1347

50.8 mm x 300 um

(100) P/Zn, cc: 1-2 x 1018 EPD < 2 x 105 2 pol EPI

CW1379

50.8 mm x 300 um

(100) P/Zn, cc: 1-2 x 1018 EPD: 1-2 x 105 2 pol EPI

CW5491

50.8 mm x 300 um

(100) Undpd, cc < 1 x 1016 EPD < 2 x 105 2 pol EPI

CW5492

50.8 mm x 300 um

(100) N/S, cc: 1-2 x 1018 EPD < 2 x 105 2 pol EPI

CW5481

50.8 mm x 300 um

(100) P/Zn, cc: 1 - 2 x 1018 EPD: 1-2 x 105 2 pol EPI

CW5629

50.8 mm x 300 um

Optical (100) Undpd, cc < 1 x 1016 2 pol 2 EPI

CW5630

50.8 mm x 300 um

Electronic (100) Undpd, cc < 1 x 1016 2 pol 2EPI

CW5720

50.8 mm x 300 um

Optical (100) Undpd, cc < 1 x 1016 2 pol 2 EPI

We also deal with the following

gallium
gallium test
gallium nitrate
gallium antimonide
gallium metal

Si

Gallium Antimonide

SOI

GaAs

Gallium Phosphide

GaN

Ge

InP

Ultra-Thin Silicon

ZnO

SiC - Silicon Carbide

Thermal Oxide