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Solar Wafers
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SOI Wafers
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Sapphire
SSP & DSP
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Silicon wafers

Gallium Antimonide

SOI wafers - Silicon on Insulator

Gallium Arsenide - GaAs

Gallium Phosphide

GaN - Gallium Nitride

Ge

InP - Indium Phosphide

Thin Silicon

ZnO - Zinc Oxide

SiC - Silicon Carbide

Thermal Oxide

CdSe

CdTe

ZnS - Zinc selenide

ZnS - Zinc selenide

ZnTe - Zinc telluride

Wafer Dicing * Indium Tin Oxide * Float Zone * Super-Thin & Flat Wafer Silicon 25um, 50um, 75um, 100um For MEMS

InSb

Indium Antimonide

'Epitaxy Ready' Polished wafers
 Single crystals are grown in a pure fused silica system by the Czochralski method from multiple zone refined polycrystalline ingot.

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Lot #

Size

Specs

INSB5729

50.8 mm x 450 um

(100) N/Undoped cc: 4-7x1014 EPD <200, 2 pol Epi

INSB5728

50.8 mm x 450 um

(111)A ,N/Undpd cc: 4-7x1014 EPD <200, 2 pol Epi

INSB5885

50.8 mm x 450 um

(100) N/Te cc: 3-5x1017 EPD <200, 1 pol Epi

Silicon wafers

Gallium Antimonide

SOI wafers - Silicon on Insulator

Gallium Arsenide - GaAs

Gallium Phosphide

GaN - Gallium Nitride

Ge

InP - Indium Phosphide

Thin Silicon

ZnO - Zinc Oxide

SiC - Silicon Carbide

Thermal Oxide

CdSe

CdTe

ZnS - Zinc selenide

ZnS - Zinc selenide

ZnTe - Zinc telluride