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Silicon wafers

Gallium Antimonide

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GaAs

Gallium Phosphide

Gallium Nitride

Germanium

Indium Phosphide

Thin Silicon

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SiC - Silicon Carbide

Thermal Oxide

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Metal Deposition * Nitride * Fused Silica * Quartz * Float Zone * Pyrex * Ultra-Thin & Flat Silicon

CESIUM IODIDE, CsI

Cesium Iodide is used for prisms and cell windows in the infrared up to 50 µm. Cesium Iodide is highly soluble in water and must be protected from moisture. The material is relatively soft, does not cleave and can withstand shock and rapid temperature changes. Maximum available size: 200 mm Dia x 100 mm Thk.


Main Properties

Chemical Formula

CsI

Crystal Class

Cubic

Lattice Constant, Å

4.57

Density, g/cm3 at 291 K

4.51

Dielectric Constant for 106 Hz at 298 K

5.65

Melting Temperature, K

894

Thermal Conductivity, W/(m K) at 298 K

1.1

Thermal Expansion, 1/K at 293 K

39.1 x 10-6

Specific Heat, cal/(g K) at 293 K

0.048

Debye Temperature, K

93.6

Bandgap, eV

6.2

Solubility, g/100 g H2O at 273 K

44

Young's Modulus, GPa

5.30

Reflection Loss for two surfaces at 10 um, %

13.6

Refractive Index

Wavelength, µm

0.29

0.32

0.35

0.39

0.46

0.52

0.64

0.92

9.0

24.4

33.0

39.5

44.7

49.3

Refractive Index

1.98

1.94

1.90

1.86

1.82

1.80

1.78

1.76

1.74

1.72

1.70

1.68

1.66

1.64

Si

Gallium Antimonide

SOI

GaAs

Gallium Phosphide

GaN

Ge

InP

Ultra-Thin Silicon

ZnO

SiC - Silicon Carbide

Thermal Oxide