Dry Thermal Oxide

University Wafer Silicon Wafers and Semicondcutor Substrates Services
University Silicon Wafer for Production

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Dry Thermal Oxide Specifications

  • Thickness range: 100Å – 2000Å
  • Thickness tolerance: 100Å+/-15Å, 200Å+/-20Å, >200Å+/-5%
  • Within wafer uniformity: +/-3% or better
  • Wafer to wafer uniformity: +/-5% or better
  • Sides processed: Both
  • Refractive index: 1.456
  • Film stress: -320MPa (Compressive)
  • Wafer size: 50mm, 100mm, 125mm, 150mm, 200mm
  • Wafer thickness: 100µm – 2,000µm
  • Wafer material: Silicon, Silicon on Insulator
  • Temperature: 950C° – 1050C°
  • Gases: Oxygen
  • Equipment: Horizontal Furnace

Dry Thermal Oxide on Silicon Wafers

For applications that require thin oxide to be grown on your substrate, then dry oxidation process is the way to go. Dry oxide can be grown on either one or both sides of the wafer.

We can also work with your custom requests including

Ramp rates
Gas flows

Dry Thermal Oxide Silicon Wafers