Sigma Aldrich Possess Silicon Dioxide Wafers

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Processing Silicon Dioxide Wafers

Sigma Aldrich process of silicon dioxide wafers (oxide thickness : 280~ 300 nm). The wafer will be employed as the backgate for transistor application, such as like MOSFET. Though, its size isn’t that important but preferred (100) orientation.

Researchers have used the following wafer spec:

100mm P(100) 1-10 ohm-cm SSP 500um Prime Grade with 300nm of Thermal Oxide