Challenges Testing Silicon Photonic Devices

university wafer substrates

What is a Silicon Photonic Device?

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These devices use light to transfer information. The lasers in the PDGS process combine multiple signals into one pulse. The signal then travels over an optic fiber. Once the data has been sent, it can be read by a photodetector. These devices have many uses in computer technology. They are a breakthrough in optical communication. They are also ideal for high-speed Internet.

The main characteristic of a silicon photonic device is its high thermo-optic coefficient, which makes passive devices sensitive to temperature changes. To overcome this problem, PDGS was developed. It allows for electro-optic modulation and is independent of the input shape. It is based on the fact that the reverse biased p-n junction overlaps a waveguide mode. This makes it possible to create a wide range of wavelengths.

Another feature of PDGS is that it can be monolithically integrated with electronic circuits. This means that silicon photonic devices can be used alongside electronics without any interference. These devices have many advantages, including decreased energy consumption, reduced heat generation, and improved speed. This makes them attractive for various applications. In addition, photonic chips can be manufactured into thin films for printing, which are more efficient than conventional methods.

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Fused Quartz Used for Evanescent Field Enhanced Fluorescence on a Photonic Crystal Surface Research

Full research paper.

Reducing the background fluorescence from the sensor substrate is critical for the detection of fluorescent tags present at low on centrations. The flame-fused quartz substrate (University
used in this experiment exhibits very-low autofluorescence when excited by a red laser source. The autofluorescence level of the quartz substrate was compared to a commercial glass

Wafer spec:

Fused Quartz Item #518
100mm(4 inch) 550um thick double side polished Quartz wafers.

Reference #93968

What is Silicon Photonics?

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Challenges in Testing and Characterizing Silicon Photonic Devices

challenges testing silicon photonic electronicsFor silicon photonic devices, there are several challenges to be addressed. Passive components have high port counts, and the devices have many polarization-dependent elements. Fortunately, there are solutions available. One of the most effective is a multiport detection system that measures optical insertion and return losses with a continuously tunable laser. This allows the user to quickly obtain an optical spectrum of the device with very high resolution.

Another challenge involves obtaining accurate and fast measurements of the device. The silicon photonics chip is a planar device, so coupling light into the chip is difficult. The most effective way to achieve this is by using incident light on the chip's surface. But if the device has multiple outputs, it is difficult to test each of them. The solution is to use a grating coupler, which couples light at ten to twelve degrees off the vertical.

This method permanently corrects fabrication errors by implanting germanium ions to break the silicon crystal, and then healing it selectively with a laser. The trimming process requires that the device undergoes a series of tests, including measurement of the power output at the output port. The device may also need annealing, a process that requires three fibres. The measurement must be precise to avoid damaging the silicon photonics.

There are other challenges in testing and characterizing silicon photonic devices. First, the device must be fabricated using a single-mode interferometer, which is a very complex process. A single-mode interferometer has only two input ports, which is difficult to align. The other challenge is measuring the sidewall angle of the device. Since the resulting y-junction waveguides have multiple outputs, the testing program must be highly precise to assess their performance.

Another challenge is that silicon photonic devices need to be tested to ensure that they are functional. Moreover, silicon photonics devices are complex, which makes it difficult to test them. Besides, the testing process must be done on a single wafer to evaluate their performance. The devices need to be monitored by a team that can make a decision based on the results. The team needs to use three fibres to measure the device's performance.

There are many challenges to test and characterize silicon photonic devices. One of the greatest is the lack of laboratory space. Developing and evaluating these devices is difficult, but it is possible. There are many advantages to this technology, such as the semiconductor ecosystem and the resulting infrastructure. The challenges of developing and testing silicon devices are vast. The test and characterizing processes require careful analysis of the device.

What Wafers Are Used in Photonic Applications?

Our research clients are working on developing novel optoelectronics based on Si, Ge, and Sn material systems compatible with modern Silicon electronics processing facilities.

Below is a typical quote:


"I am interested in purchasing 3in wafers of ~330nm SiN on ~3300nm SiO2 all on Si substrate, for photonic applications. If there are wafers in stock that are suitable for photonic/waveguide applications but not of the exact thickness mentioned above, I can also take those because that will arrive sooner. Please send me a quote for 10 wafers and how long they will take to arrive?"

UniversityWafer, Inc. Replied

Pls see below for the offer on required "330nm SiN / 3um SiO2 / Si stack" Wafer for photonic applications,We also quote 4'' for your reference

1. 3'' Waveguide Layer: Si3N4 0.33um grown LPCVD
Insulating Layer: Thermal Oxide SiO2 3.0um
Substrate Carrier Layer: <100> orient. Dia. 76.2+/-0.3mm,380+/-25um,SSP or DSP,N or P-type,1~100,Semi flat
Stack Structure: 330nm Si3N4 / 3000nm SiO2 / 380um Silicon Wafer
Qty. 10pcs

$Reference #266490 for pricing

2. 4'' Waveguide Layer: Si3N4 0.33um grown LPCVD
Insulating Layer: Thermal Oxide SiO2 3.0um
Substrate Carrier Layer: <100> orient. Dia. 100.0+/-0.3mm,500+/-25um,SSP or DSP,N or P-type,1~100,Semi flat
Stack Structure: 330nm Si3N4 / 3000nm SiO2 / 500um Silicon Wafer
Qty. 10pcs

$Reference #266490 for pricing