Below are just some of the THICK Silicon Wafers that we have from 1 inch to 6 inch diameters.

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6" Wafers
Item Qty in Material Orient. Diam. Thck Surf. Resistivity Comment
Stock (μm) Ωcm
6898 10 p-type Si:B [111] ±0.5° 6" 1,000 SSP FZ >5,000 SEMI Prime, 1Flat (57.5mm), Empak cst
B208 1 n-type Si:P [100] ±1° 6" 1,000 ±50 DSP FZ >9,500 SEMI Prime, 1Flat (57.5mm), Empak cst, Lifetime>6,000μs
S5622 14 n-type Si:P [100] 6" 1,300 ±10 E/E FZ 0.01-0.05 SEMI notch, Empak cst
L405 4 p-type Si:B [100] 6" 1,000 DSP 10-15 SEMI Prime, 1Flat (57.5mm), Empak cst, 4 Prime wafers plus 2 scratched wafers at no cost
7030 75 p-type Si:B [100] 6" 1,000 SSP 5-10 SEMI Prime, 1Flat (57.5mm), Empak cst
F162 4 p-type Si:B [100] 6" 2,000 ±50 DSP 1-35 SEMI Prime, 1Flat (57.5mm), Individual cst, Group of 4 wafers
E162 2 p-type Si:B [100] 6" 2,000 ±50 SSP 1-35 SEMI Prime, 1Flat (57.5mm), Group of 2 wafers, Back-Side polished with small scratches
G515 1 p-type Si:B [100] 6" 2,200 DSP 1-100 SEMI Prime, 1Flat (57.5mm), Individual cst, TTV<1μm
7856 10 p-type Si:B [100] 6" 3,000 ±50 SSP 1-100 SEMI Prime, 1Flat (57.5mm), Individual cst
F253 2 p-type Si:B [100] 6" 1,500 DSP 0.01-0.02 SEMI Prime, 1Flat (57.5mm), Empak cst, TTV<5μm
7314 2 n-type Si:P [100] 6" 1,280 DSP 10-35 SEMI notch Prime, Empak cst
F089 4 n-type Si:P [100] 6" 1,910 ±10 DSP 1-100 SEMI Prime, 1Flat (57.5mm), TTV<5μm, sealed in stacked trays of 1 + 3 wafer
H631 7 n-type Si:P [100] 6" 1,910 ±10 DSP 1-100 SEMI Prime, 1Flat (57.5mm), hard cst, TTV<3μm
G844 3 n-type Si:P [100] 6" 5,000 DSP 1-35 SEMI Prime, 1Flat (57.5mm), Individual cst
2533 2 n-type Si:As [100] 6" 1,000 L/L 0.0033-0.0037 SEMI, 1Flat(57.5mm), in individual wafer cassettes
E533 1 n-type Si:As [100] 6" 1,000 L/L 0.0033-0.0037 SEMI, 1Flat(57.5mm), in individual wafer cassettes
C316 10 n-type Si:P [911] ±0.5° 6" 1,500 G/G 0.1-35.0 Prime, 1Flat, Empak cst
P406 5 n-type Si:P [411] ±1° 6" 1,000 SSP 1-100 SEMI Prime, 1Flat (57.5mm), Empak cst, TTV<5μm
H515 15 p-type Si:B [100] 6" 2,200 DSP 1-100 SEMI Prime, 1Flat (57.5mm), Individual cst, TTV<1μm
G089 5 n-type Si:P [100] 6" 1,875 DSP 1-100 SEMI Prime, 1Flat (57.5mm), TTV<3μm, in stacked trays of 5 wafers

5" Wafers
S5907 20 p-type Si:B [100] 5" 1,010 ±15 SSP FZ >1,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm
                 

4" Wafers
Item Qty in Material Orient. Diam. Thck Surf. Resistivity Comment
Stock (μm) Ωcm
J178 1 p-type Si:B [100] 4" 1,000 DSP FZ >1,500 SEMI Prime, 2Flats, Empak cst
7582c 2 p-type Si:B [100] 4" 1,000 DSP FZ >1,000 SEMI Prime, 2Flats, Empak cst, TTV<1μm
D523 5 n-type Si:P [111] ±0.5° 4" 1,000 DSP FZ 0.011-0.013 Prime, NO Flats, Empak cst
6847 40 Intrinsic Si:- [100] 4" 1,000 DSP FZ >20,000 SEMI Prime, 1Flat, Empak cst
L847 3 Intrinsic Si:- [100] 4" 1,000 DSP FZ >20,000 SEMI Prime, 1Flat, Empak cst
H629 4 Intrinsic Si:- [100] 4" 1,500 DSP FZ >20,000 Prime, NO Flats, Empak cst
F422 2 Intrinsic Si:- [100] 4" 3,000 ±50 DSP FZ >20,000 SEMI Prime, 1Flat, Individual cst
E608 4 Intrinsic Si:- [111-8° towards[110]] ±0.5° 4" 1,000 DSP FZ 20,000-30,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm
H775 11 p-type Si:B [110] ±0.5° 4" 1,650 SSP 10-15 SEMI Prime, 1Flat, Individual cst
7155 42 p-type Si:B [100] 4" 1,000 DSP 10-20 SEMI Prime, 2Flats, Empak cst, TTV<5μm
7290 50 p-type Si:B [100] 4" 1,000 DSP 10-20 SEMI Prime, 2Flats, Empak cst, TTV<5μm
7791 250 p-type Si:B [100] 4" 1,000 DSP 10-20 SEMI Prime, 2Flats, Empak cst, TTV<5μm
F153 6 p-type Si:B [100] 4" 3,000 DSP 10-15 SEMI Prime, 1Flat, Individual cst
F986 15 p-type Si:B [100] 4" 1,600 DSP ~6 SEMI Prime, 1Flat, Individual cst
6938 35 p-type Si:B [100] 4" 1,000 SSP 5-10 SEMI Prime, 1Flat, Empak cst, TTV<5μm
7520 400 p-type Si:B [100] 4" 1,000 SSP 5-10 SEMI Prime, 1Flat, Empak cst, TTV<5μm
M520 25 p-type Si:B [100] 4" 1,000 SSP 5-10 SEMI Prime, 1Flat, Empak cst, TTV<5μm
S1020 2 p-type Si:B [100] 4" 1,000 SSP >1 SEMI Test, Scratched could be reworked for extra fee
6347 13 p-type Si:B [100] 4" 1,200 DSP 1-15 SEMI Prime, 2Flats, Empak cst
7699 25 p-type Si:B [100] 4" 1,400 DSP 1-10 SEMI Prime, 1Flat, Empak cst
7070 15 p-type Si:B [100] 4" 1,500 DSP 1-10 SEMI Prime, 2Flats, Empak cst, TTV<5μm
7654 5 p-type Si:B [100] 4" 2,000 ±50 SSP 1-100 Prime, NO Flats, Individual cst
6521 10 p-type Si:B [100] 4" 2,100 SSP 1-100 SEMI Prime, 1Flat, Individual cst, Manual Edges, Groups of 10 + 10 wafers
7103 22 p-type Si:B [100] 4" 3,000 SSP 1-30 SEMI, 2Flats, Empak cst, Groups of 5 wafers
7565 8 p-type Si:B [100] 4" 3,000 SSP 1-30 SEMI Prime, 2Flats, Individual cst
D594 5 p-type Si:B [100] 4" 3,175 ±35 DSP 1-10 SEMI Prime, 2Flats, Individual cst, TTV<8μm
G134 8 p-type Si:B [100] 4" 1,000 ±50 DSP 0.001-0.005 Prime, NO Flats, Empak cst
7840 3 p-type Si:B [100] 4" 5,000 ±100 SSP 0.001-0.010 Prime, NO Flats, Individual cst
M620 7 p-type Si:B [111] 4" 1,000 DSP 1-10 SEMI Prime, 1Flat, Empak cst
D599 5 p-type Si:B [111] ±0.5° 4" 1,000 DSP 0.001-0.005 SEMI Prime, 1Flat, Empak cst
4949 25 p-type Si:B [111] ±0.5° 4" 1,000 SSP <0.01 SEMI Prime, 1Flat, Empak cst
E153 3 n-type Si:P [100] 4" 2,500 DSP 1-100 SEMI Prime, 2Flats, Individual cst, Group of 3 wafers
S5932 1 n-type Si:P [100] 4" 20,000 ±100 SSP 1-10 Test, NO Flats, Individual cst, Unsealed defective
4975 13 n-type Si:Sb [211] ±0.5° 4" 1,500 ±15 DSP 0.01-0.02 SEMI Prime, 1Flat, Empak cst, TTV<1μm
F975 4 n-type Si:Sb [211] ±0.5° 4" 1,600 ±100 C/C 0.01-0.02 SEMI Test, 1Flat, Empak cst, Wafers can be polished for additional fee
E395 10 n-type Si:P [111] 4" 1,200 DSP 35-85 SEMI Prime, 2Flats, Empak cst
7430 23 n-type Si:P [111] 4" 1,000 SSP 1-10 SEMI Prime, 2Flats, Empak cst
F677 7 n-type Si:P [111] ±0.5° 4" 1,000 SSP 1-10 SEMI Prime, 2Flats, Empak cst
TS017 43 n-type Si:P [111] ±1° 4" 1,143 ±50 DSP 1-100 {2.9-46.5} SEMI Prime, 2Flats, TTV<3μm, Empak cst (9+15+19 wafers)
7459 5 n-type Si:P [111] ±0.5° 4" 2,000 ±50 E/E 1-10 Prime, NO Flats, Edges: beveled, Individual cst
7529 3 n-type Si:P [111] ±0.5° 4" 6,000 SSP 1-30 Prime, 2Flats (90°), Individual cst
3556 87 n-type Si:As [111] ±0.5° 4" 1,000 SSP 0.001-0.005 {0.0031-0.0040} SEMI Prime, 2Flats, Empak cst, TTV<4μm, Bow<10μm, Warp<20μm

3" Wafers
Item Qty in Material Orient. Diam. Thck Surf. Resistivity Comment
Stock (μm) Ωcm
H138 10 n-type Si:P [100] 3" 6,000 ±50 DSP FZ >5,000 Prime, NO Flats, Individual cst
5754 9 n-type Si:P [211] ±0.5° 3" 1,016 DSP FZ 25-75 Prime, 1Flat, Empak cst
5759 20 n-type Si:P [211] ±0.5° 3" 1,016 DSP FZ 25-75 Prime, 1Flat, Empak cst
5760 25 n-type Si:P [211] ±0.5° 3" 1,016 DSP FZ 25-75 SEMI TEST, 1Flat, Empak cst
3273 50 n-type Si:P [111] ±0.5° 3" 1,000 SSP FZ >5,000 SEMI Prime, 2Flats, Empak cst
G504 5 Intrinsic Si:- [100] 3" 1,000 DSP FZ >20,000 SEMI, 1Flat, Empak cst
6101 1 Intrinsic Si:- [100] 3" 4,000 DSP FZ >8,000 Test, Scratched, 1Flat, Individual cst
7185 1 Intrinsic Si:- [111] ±0.5° 3" 1,975 DSP FZ >20,000 Prime, 1Flat, Individual cst
D048 1 Intrinsic Si:- [111] ±0.5° 3" 1,975 DSP FZ >20,000 Test, NO Flats, Individual cst, Scratches on both sides
K056 3 p-type Si:B [100] 3" 5,000 SSP 1-20 Prime, NO Flats, Individual cst
T206 8 p-type Si:B [100] 3" 3,050 ±50 C/C >0.5 1Flat, Individual cst (can be ordered singly)
6949 8 p-type Si:B [111] 3" 2,300 DSP 4-7 SEMI Prime, 1Flat, Individual cst
S5580 5 n-type Si:P [100] ±1° 3" 2,286 ±13 DSP 15-28 SEMI Prime, 1Flat, TTV<1μm, Sealed in individual csts, in groups of 5 wafers
6741 40 n-type Si:P [100] 3" 1,000 SSP 1-20 SEMI Prime, 2Flats, Empak cst
7307 5 n-type Si:P [100] 3" 5,000 SSP 1-100 SEMI, 1Flat, Individual cst
7821 50 n-type Si:P [100] 3" 5,000 SSP 1-100 SEMI, 1Flat, Individual cst
6308 8 n-type Si:P [100] 3" 6,000 SSP 1-20 SEMI Prime, 1Flat, Individual cst< In sealed group of 8 wafers
S5921 2 n-type Si:P [100] 3" 7,620 ±100 SSP 1-10 Test, NO Flats, Edge Chips Group of 2 wafers
5721 29 n-type Si:P [111] ±0.5° 3" 1,500 DSP 31-35 SEMI Prime, 1Flat, Empak cst, Cassettes of 10 + 10 + 9 wafers
1263 5 n-type Si:P [111] ±0.5° 3" 1,400 SSP 25-35 SEMI Prime, 1Flat, in single wafer cassettes, sealed in groups of 5
H136 2 n-type Si:P [111] 3" 10,000 SSP 20-60 SEMI Prime, 1Flat, Individual cst
6198 5 n-type Si:P [111] 3" 3,000 SSP 10-20 SEMI Prime, 2Flats, Individual cst, Groups of 2 + 3 wafers
E206 100 n-type Si:P [111-5° towards[110]] ±0.25° 3" 1,000 SSP >5 SEMI Prime, 1Flat, hard cst
G206 19 n-type Si:P [111-5° towards[110]] ±0.25° 3" 1,000 SSP >5 SEMI Prime, 1Flat, in hard cassettes of 6, 6 & 7 wafers
1207 17 n-type Si:P [111-5° towards[110]] ±0.25° 3" 1,300 SSP >5 SEMI Prime, 1Flat, hard cst
S5804 25 n-type Si:P [111-0.5° towards[110]] ±0.25° 3" 1,400 E/E >5 SEMI, 1Flat, LaserMark, in opened hard cast
7645 10 n-type Si:P [111] 3" 6,000 SSP 5-10 SEMI Prime, 1Flat, Group of 10 wafers
F136 13 n-type Si:P [111] ±0.5° 3" 1,000 DSP 0.5-2.0 SEMI Prime, 2Flats, Empak cst

2" Wafers
Item Qty in Material Orient. Diam. Thck Surf. Resistivity Comment
Stock (μm) Ωcm
7505 25 p-type Si:B [100] 2" 1,600 SSP FZ >3,000 SEMI Prime, 2Flats, Individual cst
U206 59 p-type Si:B [100] 2" 3,150±50 C/C >0.5 1Flat, Individual cst
5918 11 p-type Si:B [100] 2" 3,000 SSP 0.015-0.020 Groups of 5 + 6 wafers, Test, 2Flats, Individual cst, Wafers with defects
M405 25 p-type Si:B [111] 2.5" 10,000 C/C >1 NO Flats, As-Cut, no edge-rounding
G776 58 p-type Si:B [111] 2" 1,000 SSP 0.001-0.005 SEMI Prime, 1Flat, hard cst
S5701 3 p-type Si:B [111] ±0.5° 2" 4,700 ±125 SSP 0.001-100.000 Test, NO Flats, Unsealed in plastic box
6563 6 n-type Si:P [100] 2" 3,175 SSP 1-3 Prime, NO Flats, Individual cst
4501 2 n-type Si:As [100] 2" 7,050 SSP 0.0031-0.0038 SEMI Prime, 2Flats, Individual cst Group of 2 wafers
4765 2 n-type Si:P [111] ±0.5° 2" 5,000 SSP >20 Prime, NO Flats, Individual cst, Group of 2 wafers
S5934 4 n-type Si:P [111] ±0.5° 2" 4,700 ±100 SSP 1-100 SEMI Test, 1Flat, Unsealed, Scratched
4878 1 n-type Si:P [111] ±0.5° 2" 6,000 SSP 1-10 SEMI Prime, 1Flat, Individual cst
4958 5 n-type Si:Sb [111] 2" 2,900 DSP 0.013-0.015 Prime, NO Flats, Individual cst, Group of 5 wafers
                 

1" Wafers
Item Qty in Material Orient. Diam. Thck Surf. Resistivity Comment
Stock (μm) Ωcm
1978 13 Intrinsic Si:- [111] ±0.5° 1" 1,000 SSP FZ 14,000-30,000 NO Flats, Soft cst, Cassettes of 7, 6, 6 wafers
4427 12 Intrinsic Si:- [111] ±2° 1" 27,870 ±100 C/C FZ >10,000 Single Crystal Silicon Rod, 0.39" diameter × 27.87±0.1mm
L678 13 p-type Si:B [100] 1" 3,000 SSP 1-50 Prime, NO Flats, Individual cst, Group of 13 wafers
6179 1 n-type Si:P [100] 1" 1,500 SSP 1-20 Prime, NO Flats, Soft cst
6446 1 Intrinsic Si:- [100] 0.5" 12,700 ±50 C/C FZ >10,000 NO Flats, a set of 4 rods sealed in polyehtylene foil