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New
Super-Thin Silicon

3" P(100) 25um  DSP 1-10 ohm-cm

LiTa03               LiNbO3

Wafer Dicing  * Indium Tin Oxide  * Float ZoneSuper-Thin & Flat Wafer Silicon 25um, 50um, 75um, 100um For MEMS

Silicon Nitride Wafers
Ask for the Nitride wafers that we have in stock.

Stoichiometric LPCVD Nitride  - Our Standard nitride film works great as hard mask for KOH etching and can be used as a tool for defining active regions during field oxidation.

Our Low Stress Nitride retains all of the same benefits associated with our standard nitride but can also be used for Membranes, Cantilever Beams and other mechanical structures associated with MEMS devices.

Our Super low stress nitride has been developed for applications that require extremely low film stress. Film Stress can also be customized to meet your unique specifications.

 

New Services click link to learn more or just fill out form!

PECVD Nitride
PECVD Oxide
PECVD OxyNitride
PECVD Low Stress Nitride
PECVD Silicon Carbide
PECVD Carbon Doped Oxide

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Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance. Silicon Nitride is produced in three main types; Reaction Bonded Silicon Nitride (RBSN), Hot Pressed Silicon Nitride (HPSN) and Sintered Silicon Nitride (SSN). We have Silicon Nitride 2" - 12" all specs and quanities.

Fill out the form for an immediate quote.

Our PECVD Nitride is a single sided film that has been optimized for wafers requiring minimal thermal processing.  Because PECVD Nitride is deposited at low temperatures, it offers greater flexibility and can be deposited over any of our other thin films. 

  • Wafers Sizes up to 300mm
  • Capable of handling custom substrate shapes, sizes and materials
  • Thickness up to 2Ám
  • Tolerance: +/- 7% or better
  • Film Stress: 600MPa Tensile
  • Refractive Index: 2.00
  • Temperature: 350C

Our PECVD OxyNitride is a single sided film that has been optimized for wafers requiring minimal thermal processing.  Because PECVD OxyNitride is deposited at low temperatures, it offers greater flexibility and can be deposited over any of our other thin films. 

  • Wafers Sizes up to 300mm
  • Capable of handling custom substrate shapes, sizes and materials
  • Thickness up to 2Ám
  • Tolerance: +/- 7% or better
  • Film Stress: Variable
  • Refractive Index: 1.5-1.9 (Per customer request)
  • Temperature: 350C

Our Low Stress PECVD Nitride is a single sided film that has been optimized for wafers requiring minimal thermal processing.  Because Low Stress PECVD Nitride is deposited at low temperatures, it offers greater flexibility and can be deposited over any of our other thin films. 

  • Wafers Sizes up to 300mm
  • Capable of handling custom substrate shapes, sizes and materials
  • Thickness up to 2Ám
  • Tolerance: +/- 7% or better
  • Film Stress: <250MPa
  • Refractive Index: 2.00
  • Temperature: 350C

Our PECVD Oxide is a single sided film that has been optimized for wafers requiring minimal thermal processing.  Because PECVD is a deposited oxide, it offers greater flexibility than thermal oxide and can be deposited over any of our other thin films. 

  • Wafers Sizes up to 300mm
  • Capable of handling custom substrate shapes, sizes and materials
  • Thickness up to 2Ám
  • Tolerance: +/- 7% or better
  • Film Stress: 400MPa Compressive
  • Refractive Index: 1.46
  • Temperature: 350C

PECVD Silicon Carbide for wafers requiring minimal thermal processing.  Because PECVD Silicon Carbide is deposited at low temperatures, it offers greater flexibility and can be deposited over any of our other thin films

  • Wafers Sizes up to 300mm
  • Capable of handling custom substrate shapes, sizes and materials
  • Thickness up to 2um
  • Tolerance: +/- 7% or better
  • Film Stress: <100MPa
  • Refractive Index: 2.73
  • Temperature: 350C

 

 

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