Etched Silicon Wafers for Polishing

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Etched Silicon Substrates

Most single side polished silicon wafers backside is etched. This means that the wafer's backside is not polished. The surface is rough. Etched is the step before polishing. The price of single side polished, back side etched wafer are less expensive than double side polished wafers all other specs being equal.

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Etching Silicon Wafer Terms

  • Anisothopic etching
  • Anisotropic etching   
  • Atching solution    
  • Etch process
  • Metal etcher
  • Chemical etching
  • Ion etching
  • Caustic etching
  • Etching technique
  • Silicon samples
  • Silicon wafers
  • Si wafers
  • Bbuffered oxide
  • Silicon nitride
  • Etch rates    

 

Etched Silicon Substrates Inventory

Below is just some of the etched silicon wafers that we have in stock.

Item Type/Dopant Orien Diam
(mm)
Thck
(μm)
POL Res Ωcm Specs
N445 n-type Si:P [112-5.0° towards[11-1]] ±0.5° 6" 875 ±10 E/E FZ >3,000 SEMI, 1Flat (47.5mm), TTV<4μmSurface Chips
S5622 n-type Si:P [100] 6" 1,300 ±10 E/E FZ 0.01-0.05 SEMI notch, Empak cst
J668 P/B [111] ±0.5° 6" 675 E/E 0.010-0.025 SEMI, 1Flat (57.5mm), Empak cst, TTV<5μm
5814 n-type Si:P [100] 6" 925 ±15 E/E 5-35 {12.5-29.7} JEIDA Prime, Empak cst, TTV<5μm
S5614 P/B [100] 5" 635 ±15 E/E FZ >5,000 2Flats, Empak cst
5744 P/B [100] 5" 920 ±10 E/E FZ >1,000 2Flats, Empak cst
S5802 P/B [100] 5" 600 ±10 E/E 2.0-3.5 SEMI, 1Flat, coin roll
X7135 P/B [100] 5" 710 E/E SEMI Test, 1Flat, Empak cst
7188 n-type Si:As [111] 5" 625 E/E 0.001-0.005 1Flat, Empak cst
X7134 n-type Si:As [100] 5" E/E 0.001-0.005 SEMI Test, 1Flat, in opened Empak cst
X7167 n-type Si:Sb [100] 5" 740 E/E SEMI 2Flats (2nd @135°), in opened Empak cst, 125.63mm diameter
S5798 n-type Si:P [100] 4" 915 ±10 E/E FZ 2,000-3,000 1Flat at [100], Empak cst
B987 n-type Si:P [112-5° towards[11-1]] ±0.5° 4" 795 E/E FZ >100 SEMI, 1Flat, in Empak, TTV<4μm, Lifetime>2,000μs
5618 n-type Si:P [100] 4" 737 ±12 E/E FZ 8.8-11.2 SEMI, 2Flats, Empak cst
2932 n-type Si:P [111] ±0.5° 4" 500 ±13 E/E FZ 6.03-7.37 SEMI, 2Flats
TS035 P/B [110] ±0.2° 4" 605 ±10 E/E 30-60 {33-41} Ready-to-polish, 2 SEMI Flats: PF@<111>±0.2°, SF @ <111> 109.5° CW from PF, TTV<2μm, in coin-roll between tissues
S7780 P/B [100] 4" 350 E/E 7-14 SEMI Prime, 2Flats, Empak cst
S7797 P/B [100] 4" 350 ±5 E/E 7-14 SEMI Prime, 2Flats, Empak cst, cannot be polished
S5841 P/B [100-0.5°] 4" 590 ±10 E/E 1-3 SEMI Prime, 2Flats
S5870 P/B [100-0.5°] 4" 575 ±10 E/E 1-10 SEMI Prime, 2Flats, Empak cst
E408 P/B [100] 4" 600 E/E 1-100 SEMI Test, 1Flat, Empak cst, No Edge-Rounding
6838 P/B [100] 4" 545 ±10 E/E 1-10 SEMI Prime, 2Flats, Empak cst
7221 P/B [100] 4" 560 ±10 E/E 1-10 SEMI Prime, 2Flats
5833 P/B [100] 4" 300 E/E 0.01-0.02 SEMI Prime, 2Flats, Empak cst, TTV<4μm
S5763 n-type Si:P [100] ±1° 4" 465 ±10 E/E 1-3 SEMI, 1Flat, Empak cst

Common Etching Processes for Silicon Wafers

The etching process reduces the silicon layer to a n-dimensional structure by chemically dissolving the silicon layer in an acidic solution. The sample is then heated to a specific molten point and is then subjected to a series of tests to evaluate the etching rate, uniformity, and mask selectivity. Here are some common etching processes that are commonly used in semiconductor manufacturing.

Before contacting the etchant, the wafer's surface roughness is reduced by more than 50%. The variation in total thickness prior to the etching process was at least 20 microns; after the etching process, the total thickness variation was less than three microns. The etched silicon wafer's edge portion is located between the nearest peripheral edge point and the central axis, extending between one and fifteen millimeters from the edge point.

After the etchant is applied, the front and back surfaces of the etched silicon wafers are inspected. In general, the front and back surfaces of the resulting etched silicon wafers have average surface roughness of 1.5-microns. However, the GBIR method is not a suitable method for the front surface, as it causes unevenness. In order to improve the etching process, the front and back surfaces of the etchant should be flat and the thickness should not exceed 20 microns.

The etchant is applied to the edge of the etchant-etched silicon wafer before it is contacted with an etchant. This procedure aims to relieve stress within the silicon wafer and avoid bowing. Typically, 0.5 to two microns are removed from the back and front surfaces. The final surface roughness should be less than 1.5 mm. Once the etchant has been applied, the etched silicon is ready to be fabricated.

When a portion of the front surface of an etched silicon wafer is etched, it is typically at least 0.3 mm Ra. The surface roughness is usually less than two microns. This is the limiting plane in wet chemical etching of the silicon layer. In addition, the 111 plane is the limiting plane in wet chemical methods of etching. If the 111 plane is etched, it will typically exhibit a surface roughness of less than 1.5 mm.

A part of an etched silicon wafer is exposed to an etchant before the etching process begins. This etchant reduces the total thickness variation of the wafer by about 3 microns. The etchant is applied to the front and back surfaces of the silicon. It is not used for manufacturing cellular electronics. It is used for manufacturing conductive and semiconducting materials.

Using this process, silicon wafers are exposed to a solution of acidic chemicals that removes the oxide layers on the surface. This results in a thin layer of silicon nitride. The acid and water solutions are heated to an optimum temperature for the etching process. A high pH balance prevents an explosive reaction. The chemical etchant is applied to the back and front surfaces of a silicon wafer.

An etching process is used to remove unwanted material from silicon wafers. The process involves applying a liquid solution to a wafer and rotating it to continuously contact the edge. It can be anisotropic or etchant-coated. In general, the etching process is done to remove a small amount of silicon from a silicon wafer. Aside from the advantages of an etchant, it is important to note that the etching process requires more time and money to complete.

When a silicon wafer is etched, a thin film of silicon nitride is deposited directly onto the silicon. In this process, a thin film of silicon niride is deposited directly on the surface of the silicon wafer. After the etching process is complete, the phosphoric acid and water are added to the nitride bath. The nitride bath is a temperature-controlled environment, and it is crucial to avoid adding too much water or the acid can cause a dangerous explosion.

The edge of silicon wafers is a crucial area for etching. This process allows the wafer to be more precise. Despite its low-tech nature, etching is a very complex operation that requires specialized equipment. To prevent this, many different etching methods are used in semiconductor manufacturing. In addition, a specialized process is used for developing semiconductor devices. Once the silicon is etched, the edges must be cleaned.