What are Some Silicon Wafer Applications?

What Wafer Spec Do You Need for Your Reesearch?

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What Wand Do you Use to Handle Silicon Wafers?

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What are Silicon Wafers are Used For Femtosecond Spectroscopy?

Silicon wafers are are ubiquitous in all electronics. Below is a silicon wafer diameters and their standard applications.

Clients have used the following Si Wafer Spec for femtosecond spectroscopy:

Silicon Item 3193: Silicon 100mm Undoped (100) DSP >10,000 ohm-cm 525um

Researchers experiment with the wafer above to generate high-field THz radiation, terahertz time-domain spectroscopy and ultrafast electro-optics.

Using images below, we will attempt to show you which applications Silicon Wafers are used in.

	Wafer Diameter				Applications
	<150mm	150mm	200mm	300mm
Annealed Silicon Wafer			Yes	Yes	Memory	LCD Driver	Analog/Logic IC
Epi Silicon Wafer	Yes	Yes	Yes	Yes	Power Devices	Automobile	Memory
Polished Silicon Wafer	Yes	Yes	Yes	Yes	Communications	Power Devices	MPU/MCU
Diffused Silicon Wafer	Yes	Yes			Automobile	Electricity	Aerospace
Non-polished Silicon Wafer	Yes	Yes			Discreet Devices
FZ Silicon Wafer	Yes	Yes	Yes		Medical Equipment	Wind Turbine	High-Speed Rail	Automobile
SOI Wafer	Yes	Yes	Yes	Yes	High Voltage Power	MEMS Sensor	CMOS	RF Devices

Research on Growth Mechanisms, Film Thickness, and Morphology Studied with UniversityWafer Silicon Wafers

Researchers from multiple major universities have used our products for their important research on deposition time. They used 500 um thick, P-type silicon wafers with a polymer like coating on top. These wafers were then used to investigate the atomic force microscopy.

Publication

Experimental Methods VUV Photo-polymerization

The reactor used for VUV photo-chemical experiments was similar to that of Truica-Marasescu et al. [6, 7, 16, 17] Briefly, it consisted of a stainless steel ‘‘cross’’ chamber, pumped down to high vacuum using a turbo-molecular pump supported by a two-stage rotary vane pump. The operating pressure during deposition was maintained near p = 15 Pa (112 mTorr). The flow rate of the hydrocarbon source gas C2H2 (99.6%, MEGS Inc., Montreal, QC, Canada), FC2H2, was kept constant at 10 sccm using a mass flow controller (Brooks Instruments, Hatfield, PA). The polymer-like [18] coatings resulting from the photo-chemical reactions were deposited on 500 μm-thick (100) p-type silicon wafers (University Wafer, Boston, MA, USA). The frontal distance between the substrate and the two different VUV sources was adjusted so that the total photon flux, Φ, interacting with the substrate was constant, Φ= 5.33 · 1014 ph/cm2/s. We used non-coherent commercial VUV (“KrL” and “XeL”) lamps (Resonance Ltd., Barrie, ON, Canada), based on an electrodeless radio-frequency (r.f., 100 MHz)-powered discharge plasma in krypton (Kr) or xenon (Xe) gas at low pressure: The Kr or Xe gas was contained in a Pyrex ampoule sealed with a MgF2 window (cut-off wavelength, λ = 112 nm), as described in further detail elsewhere [7, 16, 19]; the (resonant) emission wavelengths of the lamps were λKr = 123.6 nm (photon energy ca. 10 eV) and λXe = 147 nm (photon energy ca. 8.4 eV). The photon energies of both lamps were sufficient to break the C≡C bond in acetylene (bond energy ca. 8.3 eV). Five different treatment durations were studied, namely, 5, 10, 15, 20 and 30 min, in order to study the effect on film thickness, composition and growth. The experimental setup was housed inside a N2-filled glovebox, therefore inhibiting oxygen-induced ageing of the deposited films. X-ray Photoelectron Spectroscopy

Experimental Methods
VUV Photo-polymerization
The reactor used for VUV photo-chemical experiments was similar to that of Truica-Marasescu et al. [6, 7, 16, 17] Briefly, it consisted of a stainless steel ‘‘cross’’ chamber, pumped down to high vacuum using a turbo-molecular pump supported by a two-stage rotary vane pump. The operating pressure during deposition was maintained near p = 15 Pa (112 mTorr). The flow rate of the hydrocarbon source gas C2H2 (99.6%, MEGS Inc., Montreal, QC, Canada), FC2H2, was kept constant at 10 sccm using a mass flow controller (Brooks Instruments, Hatfield, PA). The polymer-like [18] coatings resulting from the photo-chemical reactions were deposited on 500 μm-thick (100) p-type silicon wafers (University Wafer, Boston, MA, USA). The frontal distance between the substrate and the two different VUV sources was adjusted so that the total photon flux, Φ, interacting with the substrate was constant, Φ= 5.33 · 1014 ph/cm2/s. We used non-coherent commercial VUV (“KrL” and “XeL”) lamps (Resonance Ltd., Barrie, ON, Canada), based on an electrodeless radio-frequency (r.f., 100 MHz)-powered discharge plasma in krypton (Kr) or xenon (Xe) gas at low pressure: The Kr or Xe gas was contained in a Pyrex ampoule sealed with a MgF2 window (cut-off wavelength, λ = 112 nm), as described in further detail elsewhere [7, 16, 19]; the (resonant) emission wavelengths of the lamps were λKr = 123.6 nm (photon energy ca. 10 eV) and λXe = 147 nm (photon energy ca. 8.4 eV). The photon energies of both lamps were sufficient to break the C≡C bond in acetylene (bond energy ca. 8.3 eV). Five different treatment durations were studied, namely, 5, 10, 15, 20 and 30 min, in order to study the effect on film thickness, composition and growth.
The experimental setup was housed inside a N2-filled glovebox, therefore inhibiting oxygen-induced ageing of the deposited films.
X-ray Photoelectron Spectroscopy.

 

UniversityWafer Silicon Wafers Used Research on Nanopatterned Antimicrobial Enzymatic Surfaces

Researchers from Duke University purchased 25 mm x 50 mm silicon wafers with a thickness of 0.13 mm for the purpose of studying the sequential biocidal activity and fouling-release of SEM.

Silicon Wafers Used for Multiresonant Layered Plasmonic Films

We have gold coated silicon wafers cleaned with oxygen plasma to create a hydrophilic surface.

Cleaving a Silicon Wafer To Collect Raman spectra

Researchers have used our Mono-crystalline silicon wafers to collect raman spectra.

The wafers were 2” in diameter with a nominal thickness of 280 micron and a (100) lattice
plane orientation.  Thicker 300 and 500 micron wafers with orientations (110) and (111) that were undoped and ingle side polished were also used.

Before cleaving, a mask is placed over the wafer to match the wafer's cleavage plane. A diamond scribe is used to etch the wafer along the mask. A pair of tweezers is then used to hold the larger half of the wafer in place. The wafer is snapped along the scribed edge. An illustrative tutorial of this process is given by Prime Wafers, and a useful reference for silicon's crystalline. Once cleaved, the wafer sections are dusted and cleaned with a lab tissue and isopropanol. Cleaved wafers are stored in small plastic cases with a cushion of lab tissue. In preparation of capturing spectra, wafers are delicately handled with a pair of tweezers or gloved hands and are cleaned again with isopropanol.

Biohybrid Photovoltaic Devices

P-type silicon wafers and ITO Coated Glass Slides that were 25mm x 50mm were used in the research.

What Wafers Can Be Used for Silicon Air Battery Research?

Researchers have used Arsenic (As) and Boron (B) doped silicon wafers to research the incredible promis of silicon-air batteries.

The following wafer specs were used in the experiment.

Item# EF76b: Silicon wafers, per SEMI Prime, P/E 4"Ø×3,000±25µm,Quantity=1 n-type Si:As[100]±0.5°, Ro=(0.001-0.005)Ohmcm, One-side-polished, back-side Alkaline etched, SEMI Flats (two),
Sealed in Individual Wafer cassette.

Item# 2357: Silicon wafers 100mm P/B <110> 1-10 ohm-cm, 500um, SSP Prime

Analysis on discharge behavior and performance of As- and B-doped silicon anodes in non-aqueous Si–air batteries under pulsed discharge operation

Full Article

Highly As- and B-doped single-crystalline silicon wafers (University Wafer, USA) with specifications as listed in Table 1, were cut into 12 × 12 mm sized squared pieces to be used as anodes. Before the electrochemical measurements, the anode surfaces were treated with plasma (PICO, Diener). A two-step plasma treatment was applied to Si wafers to volatilize organic contaminations and to remove the native oxide layer on the silicon surfaces. First, a treatment with oxygen/argon plasma (60% O2/40% Ar) was employed, which was followed by an argon/sulfur hexafluoride plasma (50% SF6/46% Ar/4% O2). A room temperature ionic liquid EMIm(HF)2.3F from Morita Chemical Industries, Japan was used as an electrolyte without further treatment. Commercial air-electrodes (E4b type, Electric Fuel Ltd., Israel) consisting of a stainless-steel mesh embedded into carbon black with manganese dioxide catalyst were used for air cathodes. The air side of these cathodes is covered with a Teflon layer.