What are Silicon Wafers used for?

Silicon wafers are are ubiquitous in all electronics. Below is a silicon wafer diameters and their standard applications.

Researchers experiment with the wafer above to generate high-field THz radiation, terahertz time-domain spectroscopy and ultrafast electro-optics.

Using images below, we will attempt to show you which applications Silicon Wafers are used in.

	Wafer Diameter	Applications
	<150mm	150mm	200mm	300mm
Annealed Silicon Wafer			Yes	Yes	Memory	LCD Driver	Analog/Logic IC
Epi Silicon Wafer	Yes	Yes	Yes	Yes	Power Devices	Automobile	Memory
Polished Silicon Wafer	Yes	Yes	Yes	Yes	Communications	Power Devices	MPU/MCU
Diffused Silicon Wafer	Yes	Yes			Automobile	Electricity	Aerospace
Non-polished Silicon Wafer	Yes	Yes			Discreet Devices
FZ Silicon Wafer	Yes	Yes	Yes		Medical Equipment	Wind Turbine	High-Speed Rail	Automobile
SOI Wafer	Yes	Yes	Yes	Yes	High Voltage Power	MEMS Sensor	CMOS	RF Devices

Research on Growth Mechanisms, Film Thickness, and Morphology Studied with UniversityWafer Silicon Wafers

Researchers from multiple major universities have used our products for their important research on deposition time. They used 500 um thick, P-type silicon wafers with a polymer like coating on top. These wafers were then used to investigate the atomic force microscopy.

Experimental Methods VUV Photo-polymerization

The reactor used for VUV photo-chemical experiments was similar to that of Truica-Marasescu et al. [6, 7, 16, 17] Briefly, it consisted of a stainless steel ‘‘cross’’ chamber, pumped down to high vacuum using a turbo-molecular pump supported by a two-stage rotary vane pump. The operating pressure during deposition was maintained near p = 15 Pa (112 mTorr). The flow rate of the hydrocarbon source gas C2H2 (99.6%, MEGS Inc., Montreal, QC, Canada), FC2H2, was kept constant at 10 sccm using a mass flow controller (Brooks Instruments, Hatfield, PA). The polymer-like [18] coatings resulting from the photo-chemical reactions were deposited on 500 μm-thick (100) p-type silicon wafers (University Wafer, Boston, MA, USA). The frontal distance between the substrate and the two different VUV sources was adjusted so that the total photon flux, Φ, interacting with the substrate was constant, Φ= 5.33 · 1014 ph/cm2/s. We used non-coherent commercial VUV (“KrL” and “XeL”) lamps (Resonance Ltd., Barrie, ON, Canada), based on an electrodeless radio-frequency (r.f., 100 MHz)-powered discharge plasma in krypton (Kr) or xenon (Xe) gas at low pressure: The Kr or Xe gas was contained in a Pyrex ampoule sealed with a MgF2 window (cut-off wavelength, λ = 112 nm), as described in further detail elsewhere [7, 16, 19]; the (resonant) emission wavelengths of the lamps were λKr = 123.6 nm (photon energy ca. 10 eV) and λXe = 147 nm (photon energy ca. 8.4 eV). The photon energies of both lamps were sufficient to break the C≡C bond in acetylene (bond energy ca. 8.3 eV). Five different treatment durations were studied, namely, 5, 10, 15, 20 and 30 min, in order to study the effect on film thickness, composition and growth. The experimental setup was housed inside a N2-filled glovebox, therefore inhibiting oxygen-induced ageing of the deposited films. X-ray Photoelectron Spectroscopy

Experimental Methods
VUV Photo-polymerization
The reactor used for VUV photo-chemical experiments was similar to that of Truica-Marasescu et al. [6, 7, 16, 17] Briefly, it consisted of a stainless steel ‘‘cross’’ chamber, pumped down to high vacuum using a turbo-molecular pump supported by a two-stage rotary vane pump. The operating pressure during deposition was maintained near p = 15 Pa (112 mTorr). The flow rate of the hydrocarbon source gas C2H2 (99.6%, MEGS Inc., Montreal, QC, Canada), FC2H2, was kept constant at 10 sccm using a mass flow controller (Brooks Instruments, Hatfield, PA). The polymer-like [18] coatings resulting from the photo-chemical reactions were deposited on 500 μm-thick (100) p-type silicon wafers (University Wafer, Boston, MA, USA). The frontal distance between the substrate and the two different VUV sources was adjusted so that the total photon flux, Φ, interacting with the substrate was constant, Φ= 5.33 · 1014 ph/cm2/s. We used non-coherent commercial VUV (“KrL” and “XeL”) lamps (Resonance Ltd., Barrie, ON, Canada), based on an electrodeless radio-frequency (r.f., 100 MHz)-powered discharge plasma in krypton (Kr) or xenon (Xe) gas at low pressure: The Kr or Xe gas was contained in a Pyrex ampoule sealed with a MgF2 window (cut-off wavelength, λ = 112 nm), as described in further detail elsewhere [7, 16, 19]; the (resonant) emission wavelengths of the lamps were λKr = 123.6 nm (photon energy ca. 10 eV) and λXe = 147 nm (photon energy ca. 8.4 eV). The photon energies of both lamps were sufficient to break the C≡C bond in acetylene (bond energy ca. 8.3 eV). Five different treatment durations were studied, namely, 5, 10, 15, 20 and 30 min, in order to study the effect on film thickness, composition and growth.
The experimental setup was housed inside a N2-filled glovebox, therefore inhibiting oxygen-induced ageing of the deposited films.
X-ray Photoelectron Spectroscopy.

UniversityWafer Silicon Wafers Used Research on Nanopatterned Antimicrobial Enzymatic Surfaces

Silicon Wafers Used for Multiresonant Layered Plasmonic Films

We have gold coated silicon wafers cleaned with oxygen plasma to create a hydrophilic surface.

Cleaving a Silicon Wafer To Collect Raman spectra

Researchers have used our Mono-crystalline silicon wafers to collect raman spectra.

The wafers were 2” in diameter with a nominal thickness of 280 micron and a (100) lattice
plane orientation. Thicker 300 and 500 micron wafers with orientations (110) and (111) that were undoped and ingle side polished were also used.

Before cleaving, a mask is placed over the wafer to match the wafer's cleavage plane. A diamond scribe is used to etch the wafer along the mask. A pair of tweezers is then used to hold the larger half of the wafer in place. The wafer is snapped along the scribed edge. An illustrative tutorial of this process is given by Prime Wafers, and a useful reference for silicon's crystalline. Once cleaved, the wafer sections are dusted and cleaned with a lab tissue and isopropanol. Cleaved wafers are stored in small plastic cases with a cushion of lab tissue. In preparation of capturing spectra, wafers are delicately handled with a pair of tweezers or gloved hands and are cleaned again with isopropanol.

Biohybrid Photovoltaic Devices

What Wafers Can Be Used for Silicon Air Battery Research?

Researchers have used Arsenic (As) and Boron (B) doped silicon wafers to research the incredible promis of silicon-air batteries.

Item# EF76b: Silicon wafers, per SEMI Prime, P/E 4"Ø×3,000±25µm,Quantity=1 n-type Si:As[100]±0.5°, Ro=(0.001-0.005)Ohmcm, One-side-polished, back-side Alkaline etched, SEMI Flats (two),
Sealed in Individual Wafer cassette.

Analysis on discharge behavior and performance of As- and B-doped silicon anodes in non-aqueous Si–air batteries under pulsed discharge operation

Highly As- and B-doped single-crystalline silicon wafers (University Wafer, USA) with specifications as listed in Table 1, were cut into 12 × 12 mm sized squared pieces to be used as anodes. Before the electrochemical measurements, the anode surfaces were treated with plasma (PICO, Diener). A two-step plasma treatment was applied to Si wafers to volatilize organic contaminations and to remove the native oxide layer on the silicon surfaces. First, a treatment with oxygen/argon plasma (60% O2/40% Ar) was employed, which was followed by an argon/sulfur hexafluoride plasma (50% SF6/46% Ar/4% O2). A room temperature ionic liquid EMIm(HF)2.3F from Morita Chemical Industries, Japan was used as an electrolyte without further treatment. Commercial air-electrodes (E4b type, Electric Fuel Ltd., Israel) consisting of a stainless-steel mesh embedded into carbon black with manganese dioxide catalyst were used for air cathodes. The air side of these cathodes is covered with a Teflon layer.

Silicon Used in the Microfabrication for Biomedical Research

Principal research investigators have used the following test grade silicon wafers in their fluid mechanics and electrodynamics research. Specifically, researchers used substrate item #452 to developed systems that manipulate magnetic microparticles in microfluidic channels. The applications includude microfluidic lab-on-a-chip devices, particle sorting and coating, and to measure ultralow interfacial tensions.

Silicon Wafers in-situ ATR-FTIR measurements

A scientistst was looking for silicon wafers that will serve as the ‘window’ to a pouch battery be used for Attenuated Total Reflectance−Fourier Transform Infrared Spectroscopy (ATR-FTIR) .

"I am looking for silicon wafer that will serve as the ‘window’ to a pouch battery for in-situ ATR-FTIR measurements (see schematic below). I was wondering if item 2018 would be suitable for this purpose? Item# 2018 Item# 3193."

What Silicon Wafer Specs Should I use to Monitor Airborne PDMS Contamination?

Can you help me choose the best silicon wafer grade to monitor airborne PDMS contamination? We need a clean surface to work with, in other words, we don't want to worry about the wafer cleanliness as received and we don't want to clean them. So is Test Grade good for us? Or do we have to go for the Semi-Prime Grade?

What is a Silicon Bolometer and How Do You Use It?

What is a bolometer and how do you use it? Silicon bolometers are used in many different kinds of measurements. They can be used to measure the amount of an element by measuring its thermal conductivity. Currently, the thermal conductivity of a bolometer is 3.86x10-5 W/K, which is below expectations. However, with the proper design, you can improve the thermal conductance of a bolometer.

Microbolometer

Monolithic Silicon Microbolometer Materials was used as the basis for uncooled infrared detectors. The researchers also image of how a silicon bolometer works

conducted research on the use of nickel, vandium, and molybdenum oxide thin films for uncooled infrared imaging. Both Ph.D. theses were successfully completed within the performance period of the thesis. The researchers also made use of the latest developments in silicon bolometer microbolometers.

The fabricated bolometers were assembled using a silicon wafer oxidized by e-beam evaporation. They were then characterized and an aluminum pad was deposited onto each pixel. Next, the resulting microbolometer was exposed to an Al-etch solution containing 80% H3PO4, 5% HNO3, 10% H2O, and 5% CH3COOH. Figure 2 shows the fabrication process flow: a-Si and Ti layers are exposed, and the membranes are deformed by e-beam evaporation. Finally, titanium studs are etched onto the resulting silicon microbolometer array.

The detection properties of microbolometers depend on the detector element. Its sensitivity is affected by the detector's responsivity, which is the ability of a sensor to convert an incoming radiation into an electrical signal. Responsivity is dependent on the material's TCR, 1/f noise, and resistance. A silicon bolometer with a TCR higher than 5 nm is capable of detecting the presence of molecular oxygen.

The uncooled amorphous silicon-germanium alloy is amorphous and is used to detect optical radiation ranging from UV-VIS to IR. Amorphous silicon has an excellent thermal stability and is suitable for a wide range of operational temperatures. It can be easily modified by altering the silicon/germanium ratio. Amorphous silicon is also capable of TEC-less operation. The microbolometer is an excellent example of this material.

Thin-Film Silicon Bolometer

The resistance of a thin-film silicon bolometer varies with its oxygen content. Oxygen-containing materials tend to be more prone to high resistance at room temperature. However, amorphous silicon, which is more stable to temperature changes, exhibits high resistance at room temperature. As a result, it is possible to increase the resistance of a thin-film silicon bolometer while maintaining a low TCR value.

The detectivity of the microbolometer was measured in the infrared. The mean detectivity was 1.063 x 107 cmHz1/2/W. The standard deviation was also measured, and it was found to be 4.75 x 106 cmHz1/2/W. In general, a Gaussian response is observed in the histogram of detectivity values, although a second Gaussian tended to emerge at lower D* values. The standard deviation was relatively large, which is not desirable. Nevertheless, all devices responded to the infrared radiation.

Hydrogenated amorphous silicon has a key role in infrared imaging and detection. Several key properties of a-Si-H influence the design of a detector. Resistivity, for example, has been studied over a wide temperature range and follows an Arrhenius thermally activated dependence. It then transitions to a variable range hopping mechanism. Compared to thermally activated transport alone, the TCR changes at a slower rate than expected.

Tungsten-doped vanadium oxide is another material that can be used for infrared detectors. Its TCR is relatively high at room temperature, and its resistance is low. The oxygen and tungsten contents in a V--W-Ox thin film can be varied to control the resistance and TCR. To fabricate a V--W--Ox thin film, a thin film of V--W--Ox is deposed on a silicon substrate followed by a low-temperature oxidation process.

Thermal Bolometer

Microbolometers are cornerstone imaging devices in the LWIR spectral range at room temperature. Commercial microbolometers usually have a large thermal time constant that is limited by their substantial device heat capacity. The pixel size is typically around 10 mm square, which makes it very difficult to achieve high power absorption per pixel. The silicon thermal bolometer, on the other hand, has a relatively small thermal time constant, about 1.9 x 10-11 J/K. The silicon thermal bolometer operates at frequencies over 10 kHz and a thermal time constant of less than 16 ms.

The pixel unit cells of a silicon thermal bolometer were constructed with a resonant absorbing cavity to achieve a high degree of sensitivity. The pixel unit cells are connected to form a bolometer array. The array is constructed with multiple silicon pixels with a common semiconductor chip. The bolometers can be analyzed using microscopy, scanning electron microscope, or near-field heat transfer experiments.

The bolometer is a nonlinear device that detects electromagnetic radiation and massive particles. Its high sensitivity makes it a useful tool in observational astronomy, thermal imaging, and night vision. Although most bolometers operate at room temperature, newer models need to be even more sensitive to detect ultra-fast radiation. In order to increase the sensitivity of a bolometer, its temperature needs to be cooled to a fraction of absolute zero.

Initially, an a-Si microbolometer was created by Texas Instruments. Texas Instruments had leading-edge CMOS technology at the time. But a -Si microbolometer's impedance is too large to allow for pulsed bias, so the L-3 developed a constant voltage-biased silicon device. Eventually, high-density CMOS circuitry became cost-competitive with VO X devices.

Hot Electron Bolometer

A bilayer graphene hot electron bolometer is fabricated by e-beam lithography. The BN/Graphene ribbon is placed between the electrodes and acts as a thermal and electrical barrier. This results in greater thermal isolation and increased electrical contact resistance. Graphene films have a high resistance when they are hot, and the resistance decreases as they warm up. This characteristic allows the device to measure the temperature at which a sample is exposed to a high-energy electron beam.

This hot electron bolometer for silicon allows for extremely high sensitivities. These devices are highly sensitive and can be manufactured using partially compensated doping. They can be used to fabricate FIR bolometer arrays and low-temperature thermistors. Their DC resistance is normally well described by variable range hopping, and the geometry can be chosen to produce operating resistances of 107 or 109 ohms.

Another method to create a hot electron bolometer is to combine graphene and a silicon detector. The two materials have a unique property that makes them equally effective as hot electron bolometers. In this way, graphene can be used for sensitive temperature measurements, for example to detect the temperature of semiconductor devices. In addition, graphene is highly conductive and its optical responsivity is 1.6 x 105 V/W at 1.5 K.

A graphene-based bolometer is another promising technology. Researchers have been able to measure the temperature of graphene at 80MHz. This technique is highly efficient and has no inherent barriers. It can also be used to demonstrate ultrahigh sensitivity at lower temperatures. It may even be possible to make a graphene detector operate at room temperature. But for now, these developments are still at an early stage.

Thermal Photothermal Bolometer

A thermal photothermal bolometer is a device that can measure the amount of radiation in a given wavelength. It is particularly useful for detecting ionizing particles, radiation, and dark matter. While other types of detectors are better at detecting the same wavelength, bolometers are among the most sensitive for millimeter wavelengths, also known as far-infrared and terahertz. The sensitivity of bolometers depends on the ability to cool the detector to a fraction of the absolute temperature.

The thermal resistance of a film has an effect on the response time of the bolometer. Hence, thick superconducting films can be used as bolometers. They operate in the temperature range of 89-92 K. High response rates can be achieved by biasing current below critical current and observing photo-voltage during the resistive state. However, the time response of thick YBCO films is relatively slow (ms). Thus, present work focuses on the resistive transition and the width of the peak photo-signal.

Microbolometers have also been developed as thermal cameras. Microbolometers consist of a grid of heat sensors made from vanadium oxide or amorphous silicon. The light emitted from these heat sensors changes their electrical resistance and is then processed to provide temperatures. These devices commonly have three sizes: 640x480, 320x240, and 160x120. Each of these size arrays provides the same level of resolution.

Thermal photothermal bolometers are generally made from graphene. They have a high photothermal efficiency compared to bare VO2-based actuators. Furthermore, the VO2/SWNT actuators show similar displacement under 660-nm illumination while the VO2/uSWNT actuators have a larger response for the 985-nm laser. This explains the differences in maximum deflection.

What are Some Silicon Wafer Applications?

What Wafer Spec Do You Need for Your Reesearch?

Just Ask Us!

What Wand Do you Use to Handle Silicon Wafers?

Silicon Wafers for Hydrophobic Coatings Research

Waveguide Applications

Diced Silicon Wafers for Biosensor application

What are Silicon Wafers are Used For Femtosecond Spectroscopy?

Research on Growth Mechanisms, Film Thickness, and Morphology Studied with UniversityWafer Silicon Wafers

Experimental Methods VUV Photo-polymerization

UniversityWafer Silicon Wafers Used Research on Nanopatterned Antimicrobial Enzymatic Surfaces

Silicon Wafers Used for Multiresonant Layered Plasmonic Films

Cleaving a Silicon Wafer To Collect Raman spectra

Biohybrid Photovoltaic Devices

What Wafers Can Be Used for Silicon Air Battery Research?

Analysis on discharge behavior and performance of As- and B-doped silicon anodes in non-aqueous Si–air batteries under pulsed discharge operation

Silicon Used in the Microfabrication for Biomedical Research

Silicon Wafers in-situ ATR-FTIR measurements

What Silicon Wafer Specs Should I use to Monitor Airborne PDMS Contamination?

What is a Silicon Bolometer and How Do You Use It?

Microbolometer

Thin-Film Silicon Bolometer

Thermal Bolometer

Hot Electron Bolometer

Thermal Photothermal Bolometer