1 Micron Total Thickness Variation (TTV) Silicon Wafers

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What is Total Thickness Variation?

TTV is the flatness of a substrates across the wafer. Most 500um thick silicon wafers have a standard TTV of between 10-25 micron. 1 mircon TTV means that the wafer's surfaces is so tight that they are perfect MEMS applications

 

 

Total Thickness Variation (TTV)

We have total thickness variation silicon wafer surface flatness as tight as 1 micron. The flatter the surface of the wafer the higher the yield during the photolithography process. A wafer's flatness is the linear thickness variation across the wafer.

Below are just some of the ultra-flat silicon that we have in stock.

Item Qty in Material Orient. Diam Thck Surf. Resistivity Comment
Stock Dopant (mm) (μm) Ωcm
6971 5 n-type Si:P [100-25° towards[110]] ±1° 6" 675 P/P 1-100 SEMI notch Prime, Empak cst, TTV<1μm
S5594 2 p-type Si:B [100] 5" 990 ±8 P/P 1--25 SEMI Prime, Empak cst, TTV<1μm
S5597 23 n-type Si:Sb [100] ±1° 5" 1,200 ±10 P/E 0.001-0.025 SEMI Prime, SEMI notch, TTV<1μm Empak cst
F709 18 n-type Si:P [100] 5" 762 ±12 P/P 5--35 SEMI Prime, 1Flat, Empak cst, TTV<1μm, Bow<5μm, Warp<10μm
S6284 1 n-type Si:P [100] ±1° 4" 200 ±10 P/P FZ >1,000 SEMI Prime, 1Flat, TTV<1μm, in Empak cst
C310 5 Intrinsic Si:- [100] 4" 510 ±5 P/P FZ >20,000 SEMI Prime, 1Flat, TTV<1μm, Empak cst
F103 10 Intrinsic Si:- [100] 4" 525 P/P FZ >20,000 SEMI Prime, 1Flat, TTV<1μm, Empak cst,
G706 7 Intrinsic Si:- [100] 4" 500 P/P FZ >20,000 SEMI Prime, 1Flat, TTV<1μm, Empak cst
6356 10 Intrinsic Si:- [100] 4" 500 P/P FZ >20,000 SEMI Prime, 1Flat, TTV<1μm, Empak cst
J302 5 p-type Si:B [100] 4" 600 P/P 1--50 SEMI Prime, 1Flat, TTV<μm, Empak cst
C796 6 p-type Si:B [100] 4" 525 P/P 1--30 SEMI Prime, 1Flat, Empak cst, TTV<1μm
6570 25 n-type Si:P [100] 4" 400 P/P 1--10 SEMI Prime, 2Flats, TTV<1μm, With lasermark, Empak cst
4975 13 n-type Si:Sb [211] ±0.5° 4" 1,500 ±15 P/P 0.01-0.02 SEMI Prime, 1Flat, Empak cst, TTV<1μm
L302 13 p-type Si:B [100] 4" 625 P/P 1--50 SEMI Prime, 1Flat,TTV<1μm, Empak cst
J066 10 n-type Si:P [100] 4" 500 P/P 1-100 SEMI Prime, 2Flats, TTV<1μm, With Lasermark, Empak cst
4154 7 p-type Si:B [110] ±0.5° 3" 360 P/P 1--10 SEMI Prime, 2Flats, TTV<1μm, 1-2 weeks ARO o repolish
6710 5 p-type Si:B [100] 3" 375 P/P 1--20 SEMI Prime, 2Flats, Empak cst, TTV<1μm
6826 7 p-type Si:B [100] 3" 475 P/P 1--50 SEMI Prime, 2Flats, Empak cst, TTV<0.3μm
D750 14 p-type Si:B [100] 3" 420 P/P <1 SEMI Prime, 2Flats, Empak cst, TTV<1μm
S5580 5 n-type Si:P [100] ±1° 3" 2,286 ±13 P/P 15-28 SEMI Prime, 1Flat, TTV<1μm, Sealed in individual csts, in groups of 5 wafers
S5824 23 n-type Si:P [100] ±1° 3" 300 ±10 P/P 5--15 SEMI Prime, TTV<1μm, Empak cst
6400 4 n-type Si:P [100] 3" 350 P/P 1--25 SEMI Prime, 1Flat, TTV<1μm, Empak cst
6818 5 n-type Si:P [100] 3" 381 P/P 1--30 SEMI Prime, 2Flats, Empak cst, TTV<1μm
H988 20 p-type Si:B [100] 3" 580 P/P 1-100 SEMI Prime, 1Flat, TTV<1μm, Lasermark, Empak cst
H714 10 n-type Si:P [100] 3" 350 P/P 1--25 SEMI Prime, 1Flat, TTV<1μm, Empak cst