Ultra-Flat Silicon Wafers for Demanding Applications

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What are Ultra-Flat Silicon Wafers?

Ultra-flat Silicon wafers have a thickness across the wafer of 200 microns or thinner. They are usually Double Side Polished to better the bow, warp and ttv specs. Single side polished ultra-flat silicon wafers can also be made. They are used in MEMS research and other research and production that require flatter thickness specs than standard. thickness is measured in microns and ultra flat wafers are those under 200 microns thick.

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Ultra-Flat Silicon Wafer Inventory

Total thickness variations of just 1 micron is possible. Below is just a short list of some of the ultra-flat wafers that we have in stock. Other flat TTV inlclude 2 mircon and thicker if required.

Item Qty in Typ/Dop Orient. Dia. Thck (μm) Polish Resistivity Comments
6971 5 n-type Si:P [100-25° towards[110]] ±1° 6" 675 P/P 1-100 SEMI notch Prime, Empak cst, TTV<1μm
S5594 2 P/B [100] 5" 990 ±8 P/P 1--25 SEMI Prime, Empak cst, TTV<1μm
S5597 23 n-type Si:Sb [100] ±1° 5" 1,200 ±10 P/E 0.001-0.025 SEMI Prime, SEMI notch, TTV<1μm Empak cst
D868 10 P/B [100] 5" 590 P/P 1--30 SEMI Prime with Notch, TTV<1μm, Bow/Warp<10μm, Empak cst
F709 18 n-type Si:P [100] 5" 762 ±12 P/P 5--35 SEMI Prime, 1Flat, Empak cst, TTV<1μm, Bow<5μm, Warp<10μm
S6284 1 n-type Si:P [100] ±1° 4" 200 ±10 P/P FZ >1,000 SEMI Prime, 1Flat, TTV<1μm, in Empak cst
C310 5 Intrinsic Si:- [100] 4" 510 ±5 P/P FZ >20,000 SEMI Prime, 1Flat, TTV<1μm, Empak cst
G706 7 Intrinsic Si:- [100] 4" 500 P/P FZ >20,000 SEMI Prime, 1Flat, TTV<1μm, Empak cst
6356 10 Intrinsic Si:- [100] 4" 500 P/P FZ >20,000 SEMI Prime, 1Flat, TTV<1μm, Empak cst
J302 5 P/B [100] 4" 600 P/P 1--50 SEMI Prime, 1Flat, TTV<μm, Empak cst
F022 20 P/B [111] ±0.3° 4" 350 ±5 P/P <0.05 SEMI Prime, 1Flat, Empak cst, TTV<1μm, Bow/Wrp<15μm
6570 25 n-type Si:P [100] 4" 400 P/P 1--10 SEMI Prime, 2Flats, TTV<1μm, With lasermark, Empak cst
4975 13 n-type Si:Sb [211] ±0.5° 4" 1,500 ±15 P/P 0.01-0.02 SEMI Prime, 1Flat, Empak cst, TTV<1μm
S962 2 Intrinsic Si:- [100] 4" 525 P/P FZ >20,000 SEMI Prime, 1Flat, Super Low TTV<0.3μm over entire wafer, Empak cst
4154 7 P/B [110] ±0.5° 3" 360 P/P 1--10 SEMI Prime, 2Flats, TTV<1μm, 1-2 weeks ARO o repolish
6710 5 P/B [100] 3" 375 P/P 1--20 SEMI Prime, 2Flats, Empak cst, TTV<1μm
6826 7 P/B [100] 3" 475 P/P 1--50 SEMI Prime, 2Flats, Empak cst, TTV<0.3μm
D750 14 P/B [100] 3" 420 P/P <1 SEMI Prime, 2Flats, Empak cst, TTV<1μm
S5580 5 n-type Si:P [100] ±1° 3" 2,286 ±13 P/P 15-28 SEMI Prime, 1Flat, TTV<1μm, Sealed in individual csts, in groups of 5 wafers
S5824 23 n-type Si:P [100] ±1° 3" 300 ±10 P/P 5--15 SEMI Prime, TTV<1μm, Empak cst
6400 4 n-type Si:P [100] 3" 350 P/P 1--25 SEMI Prime, 1Flat, TTV<1μm, Empak cst
6818 5 n-type Si:P [100] 3" 381 P/P 1--30 SEMI Prime, 2Flats, Empak cst, TTV<1μm

Ultra Flat Silicon Wafer

With the development of advanced packaging technologies, the requirements on lithographic processes have become tighter than before. Wafer surface requirements have become more stringent and competitive, as wafers need to be manufactured with technologies that allow for a wider range of materials and a greater number of different substrate types. We are working to provide a wider range of specifications, but we remain focused on delivering more services and meeting requirements even faster. [Sources: 2, 4, 7]

P-type wafers are heavily doped, are often used as epi substrates and typically have a resistance of 1 ohm / cm-2. Prime Wafer or Prime refers to the highest possible quality of silicon wafers, but there are a variety of prime numbers for each. The Wafer Edge Exposure (WEE) is a lithography step scanner used in the production of high-performance ultra-flat silicon wafers. In this layout, the layout is surrounded by a layer of copper, copper oxide, gold, silver, platinum, nickel, cobalt and copper. [Sources: 1, 7]

Czochralski Growth is a method of producing silicon wafers for the production of semiconductor devices known as CZ wafers. It produces high-resistance silicon produced with a crucible that is not used for crystal growth. [Sources: 1, 5]

Rieutord et al. assumed that the gravitational force between the two silicon wafers could be limited to a van der Waals force in a first approach due to the hydrophobic bond. Studies on Si and SiO2 surfaces have shown that they are in contact with each other, but not with each other. [Sources: 3]

If ultra-thin oxide layers are involved, defects are visible, even if the usual surface preparations are carried out. Wafer defects range from imperfections buried in silicon masses to defects on the surface of the silicon wafers themselves. If an ultra-thin oxide layer is involved, these defects may not be visible when carried out under standard surface preparation. [Sources: 1, 3]

This is where the reusability of wafers is best demonstrated by the manufacture and comparison of these types of devices. Wafer feeders are able to support a wide range of applications, from microelectronics, semiconductors and high-performance electronics. The fu-L stepper (fu) is a sophisticated production tool and is widely used in the microelectronics industry. [Sources: 0, 7]

The Pacemaker can accommodate a wide range of specialty wafer materials, including silicon and sapphire, and can be used for projections in a variety of applications including microelectronics, semiconductors and high-performance electronics. The 49 MEMS steppers also process effectively warped silicon wafers, and the entire Nbsp supports optional equipment. 1, 2006 / 3), which was established by the National Institute of Standards and Technology (NIST) of the United States of America (USA). [Sources: 7]

In a situation where a wafer is loaded onto a 12A3 carrier, only thirteen 2A2 wafers can be located and polished simultaneously. TSV etching on the hosts, and the near - inside of the host holder is processed. When using an 18a3 diameter with carrier plate, all polished shafts must be embedded at 18A4 diameter. If the wafer was processed and etched in the outer edge of its carrier, the material could be processed to a thickness of only 1.5 mm or less. [Sources: 2, 7]

The important requirement here is to align the layer (s) patterned on the front of the first wafer with the pattern on both front and side wafers, using a layer pattern of 1X, 2X and mini-steppers. The Saturn Spectrum 300 offers customers 300mm lithography capacity for flip-chip and bump processing, and the broadband step system, also known as 1x Stepper or Mini Stepping, plays a key role. S required to tread a WAFER part, precise positioning requires a rugged, powerful feedback controller that allows for fast throughput of silicon waves. If you follow us on Twitter or use semiconductor devices, please contact us for more information about how to use our products and services. [Sources: 7]

The results strongly suggest that the wafer bonding with ELO technology produces a high-quality II-V film structure with a low material degradation rate. Si substrates and structures with high-quality films and strongly suggest that wafers for bonding by this technique must be developed and that a higher quality II - IV film must be provided for the Si substrate and material degradation process. [Sources: 0]

The grading method currently used in industry does not have the capability of high throughput wafers, which means that it can only grade a limited number of wafers at the same time due to the distortions that occur in plates. The results do not guarantee reuse of the donor wafer, since the AFM and Raman spectra were evaluated and the epitaxial quality was not fully reflected in the measurements. [Sources: 0, 2]

A key motivation for the company is to provide the silicon wafers that are most suitable for the customer's requirements. Philips negotiated to buy Cobilt to serve as a marketing outlet for its nbsp, and the stepper can accommodate a wide range of specialty wafer materials, including silicon and sapphire. The cluster is the thickness distribution of the wafers when the crystals are cut into them. Each of these cassettes is coated with photoresist and mounted on a cassette or boat that holds a number of wafers. It is equipped with optional equipment to support the use of different types of silicon such as thermal oxide, silicon dioxide or silicon nitride. [Sources: 4, 6, 7]


[0]: https://www.nature.com/articles/srep20610

[1]: https://cleanroom.byu.edu/ew_wafer_specs

[2]: https://patents.google.com/patent/US8734207B1/en

[7]: https://ferra.xyz/nbq9d/wafer-stepper.html