Ultra-Flat Silicon Wafers

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What Are Ultra-Flat Silicon Wafers

Ultra-flat Silicon wafers have a thickness across the wafer of 200 microns or thinner. They are used in MEMS research and other research and production that require flatter thickness specs than standard. thickness is measured in microns and ultra flat wafers are those under 200 microns thick.

Total thickness variations of just 1 micron is possible. Below is just a short list of some of the ultra-flat wafers that we have in stock. Other flat TTV inlclude 2 mircon and thicker if required.

Item Qty in Typ/Dop Orient. Dia. Thck (μm) Polish Resistivity Comments
6971 5 n-type Si:P [100-25° towards[110]] ±1° 6" 675 P/P 1-100 SEMI notch Prime, Empak cst, TTV<1μm
S5594 2 p-type Si:B [100] 5" 990 ±8 P/P 1--25 SEMI Prime, Empak cst, TTV<1μm
S5597 23 n-type Si:Sb [100] ±1° 5" 1,200 ±10 P/E 0.001-0.025 SEMI Prime, SEMI notch, TTV<1μm Empak cst
D868 10 p-type Si:B [100] 5" 590 P/P 1--30 SEMI Prime with Notch, TTV<1μm, Bow/Warp<10μm, Empak cst
F709 18 n-type Si:P [100] 5" 762 ±12 P/P 5--35 SEMI Prime, 1Flat, Empak cst, TTV<1μm, Bow<5μm, Warp<10μm
S6284 1 n-type Si:P [100] ±1° 4" 200 ±10 P/P FZ >1,000 SEMI Prime, 1Flat, TTV<1μm, in Empak cst
C310 5 Intrinsic Si:- [100] 4" 510 ±5 P/P FZ >20,000 SEMI Prime, 1Flat, TTV<1μm, Empak cst
G706 7 Intrinsic Si:- [100] 4" 500 P/P FZ >20,000 SEMI Prime, 1Flat, TTV<1μm, Empak cst
6356 10 Intrinsic Si:- [100] 4" 500 P/P FZ >20,000 SEMI Prime, 1Flat, TTV<1μm, Empak cst
J302 5 p-type Si:B [100] 4" 600 P/P 1--50 SEMI Prime, 1Flat, TTV<μm, Empak cst
F022 20 p-type Si:B [111] ±0.3° 4" 350 ±5 P/P <0.05 SEMI Prime, 1Flat, Empak cst, TTV<1μm, Bow/Wrp<15μm
6570 25 n-type Si:P [100] 4" 400 P/P 1--10 SEMI Prime, 2Flats, TTV<1μm, With lasermark, Empak cst
4975 13 n-type Si:Sb [211] ±0.5° 4" 1,500 ±15 P/P 0.01-0.02 SEMI Prime, 1Flat, Empak cst, TTV<1μm
S962 2 Intrinsic Si:- [100] 4" 525 P/P FZ >20,000 SEMI Prime, 1Flat, Super Low TTV<0.3μm over entire wafer, Empak cst
4154 7 p-type Si:B [110] ±0.5° 3" 360 P/P 1--10 SEMI Prime, 2Flats, TTV<1μm, 1-2 weeks ARO o repolish
6710 5 p-type Si:B [100] 3" 375 P/P 1--20 SEMI Prime, 2Flats, Empak cst, TTV<1μm
6826 7 p-type Si:B [100] 3" 475 P/P 1--50 SEMI Prime, 2Flats, Empak cst, TTV<0.3μm
D750 14 p-type Si:B [100] 3" 420 P/P <1 SEMI Prime, 2Flats, Empak cst, TTV<1μm
S5580 5 n-type Si:P [100] ±1° 3" 2,286 ±13 P/P 15-28 SEMI Prime, 1Flat, TTV<1μm, Sealed in individual csts, in groups of 5 wafers
S5824 23 n-type Si:P [100] ±1° 3" 300 ±10 P/P 5--15 SEMI Prime, TTV<1μm, Empak cst
6400 4 n-type Si:P [100] 3" 350 P/P 1--25 SEMI Prime, 1Flat, TTV<1μm, Empak cst
6818 5 n-type Si:P [100] 3" 381 P/P 1--30 SEMI Prime, 2Flats, Empak cst, TTV<1μm