What Are Ultra-Flat Silicon Wafers?
Ultra-flat silicon wafers are prime-grade substrates manufactured with extremely tight specifications for total thickness variation (TTV), bow, and warp. These wafers are commonly used in photolithography, MEMS fabrication, wafer bonding, thin-film deposition, and semiconductor metrology where dimensional accuracy is critical.
Unlike standard prime wafers, ultra-flat silicon wafers are designed to provide exceptional surface uniformity. Total thickness variation can be controlled to less than 1 μm and, for certain applications, below 0.3 μm across the entire wafer.
Both double-side polished (DSP) and single-side polished (SSP) wafers are available in a variety of diameters, orientations, thicknesses, and resistivities.
Common Applications of Ultra-Flat Silicon Wafers
- Photolithography and stepper calibration
- MEMS fabrication
- Wafer bonding studies
- Thin-film deposition
- Atomic force microscopy (AFM)
- Semiconductor metrology
- Microfluidic device fabrication
- Advanced packaging research
- Optical and sensor applications
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Applications of Ultra-Flat Silicon Wafers
Ultra-flat silicon wafers are used whenever exceptional thickness uniformity and minimal bow or warp are required. Wafers with total thickness variation (TTV) below 1 μm are commonly used in:
- Photolithography and stepper calibration
- MEMS fabrication
- Atomic Force Microscopy (AFM)
- Thin-film deposition and characterization
- Semiconductor device manufacturing
- Electron beam lithography and wafer-level packaging
- Optical sensors and microfluidic devices
- High-resolution imaging and metrology systems
Typical Specifications Available
Ultra-flat silicon wafers are available in diameters from 2 to 6 inches with single-side polished (SSP) or double-side polished (DSP) finishes. Standard orientations include (100), (110), and (111), with resistivities ranging from less than 0.01 Ω-cm to greater than 20,000 Ω-cm. Prime-grade wafers with TTV below 1 μm and even ultra-low TTV below 0.3 μm are available for advanced lithography, MEMS, thin-film deposition, AFM studies, and semiconductor metrology applications.
| Item | Qty | Type/Dopant | Orientation | Dia. | Thickness (μm) | Polish | Resistivity | Comments |
| 6971 | 5 | n-type Si:P | [100-25° toward [110]] ±1° | 6" | 675 | P/P | 1-100 | SEMI notch Prime, Empak cst, TTV<1μm |
| S5594 | 2 | P/B | [100] | 5" | 990 ±8 | P/P | 1-25 | SEMI Prime, Empak cst, TTV<1μm |
| S5597 | 23 | n-type Si:Sb | [100] ±1° | 5" | 1,200 ±10 | P/E | 0.001-0.025 | SEMI Prime, SEMI notch, TTV<1μm |
| D868 | 10 | P/B | [100] | 5" | 590 | P/P | 1-30 | SEMI Prime with Notch, TTV<1μm, Bow/Warp<10μm, Empak cst |
| F709 | 18 | n-type Si:P | [100] | 5" | 762 ±12 | P/P | 5-35 | SEMI Prime, 1 Flat, Empak cst, TTV<1μm, Bow<5μm, Warp<10μm |
| S6284 | 1 | n-type Si:P | [100] ±1° | 4" | 200 ±10 | P/P | FZ >1,000 | SEMI Prime, 1 Flat, TTV<1μm, Empak cst |
| C310 | 5 | Intrinsic Si:- | [100] | 4" | 510 ±5 | P/P | FZ >20,000 | SEMI Prime, 1 Flat, TTV<1μm, Empak cst |
| G706 | 7 | Intrinsic Si:- | [100] | 4" | 500 | P/P | FZ >20,000 | SEMI Prime, 1 Flat, TTV<1μm, Empak cst |
| 6356 | 10 | Intrinsic Si:- | [100] | 4" | 500 | P/P | FZ >20,000 | SEMI Prime, 1 Flat, TTV<1μm, Empak cst |
| J302 | 5 | P/B | [100] | 4" | 600 | P/P | 1-50 | SEMI Prime, 1 Flat, TTV<1μm, Empak cst |
| F022 | 20 | P/B | [111] ±0.3° | 4" | 350 ±5 | P/P | <0.05 | SEMI Prime, 1 Flat, Empak cst, TTV<1μm, Bow/Warp<15μm |
| 6570 | 25 | n-type Si:P | [100] | 4" | 400 | P/P | 1-10 | SEMI Prime, 2 Flats, TTV<1μm, with lasermark, Empak cst |
| 4975 | 13 | n-type Si:Sb | [211] ±0.5° | 4" | 1,500 ±15 | P/P | 0.01-0.02 | SEMI Prime, 1 Flat, Empak cst, TTV<1μm |
| S962 | 2 | Intrinsic Si:- | [100] | 4" | 525 | P/P | FZ >20,000 | SEMI Prime, 1 Flat, Super Low TTV<0.3μm over entire wafer, Empak cst |
| 4154 | 7 | P/B | [110] ±0.5° | 3" | 360 | P/P | 1-10 | SEMI Prime, 2 Flats, TTV<1μm, 1-2 weeks ARO or repolish |
| 6710 | 5 | P/B | [100] | 3" | 375 | P/P | 1-20 | SEMI Prime, 2 Flats, Empak cst, TTV<1μm |
| 6826 | 7 | P/B | [100] | 3" | 475 | P/P | 1-50 | SEMI Prime, 2 Flats, Empak cst, TTV<0.3μm |
| D750 | 14 | P/B | [100] | 3" | 420 | P/P | <1 | SEMI Prime, 2 Flats, Empak cst, TTV<1μm |
| S5580 | 5 | n-type Si:P | [100] ±1° | 3" | 2,286 ±13 | P/P | 15-28 | SEMI Prime, 1 Flat, TTV<1μm, sealed in individual csts, in groups of 5 wafers |
| S5824 | 23 | n-type Si:P | [100] ±1° | 3" | 300 ±10 | P/P | 5-15 | SEMI Prime, TTV<1μm, Empak cst |
| 6400 | 4 | n-type Si:P | [100] | 3" | 350 | P/P | 1-25 | SEMI Prime, 1 Flat, TTV<1μm, Empak cst |
| 6818 | 5 | n-type Si:P | [100] | 3" | 381 | P/P | 1-30 | SEMI Prime, 2 Flats, Empak cst, TTV<1μm |
Typical Specifications Available
UniversityWafer offers ultra-flat silicon wafers in diameters from 3 inches to 6 inches with double-side polished (DSP) or polished/etched finishes. Standard specifications include:
- Total Thickness Variation (TTV): <1 μm
- Super-low TTV options: <0.3 μm
- Orientations: <100>, <110>, and <111>
- N-type, P-type, and intrinsic silicon
- Resistivities from 0.001 to over 20,000 Ω-cm
- Thicknesses from 200 μm to over 2,000 μm
- Prime-grade and custom specifications available
Custom diameters, ultra-low bow, laser marking, and special packaging options are also available for semiconductor, MEMS, and research applications.