150mm Silicon Wafers all Diameters and Specifications

University Wafer Silicon Wafers and Semicondcutor Substrates Services
University Silicon Wafer for Production

When were 150mm Silicon Wafers Introduced?

Introduced in 1983, 150mm (5.9 inch, usually referred to as "6 inch") are either undoped, boron doped, phosphorous doped, arsenic doped, antimony doped and can have low or high-doping. Orientation can be (100), (111), (110). 150mm wafers can use the CZ or FZ method for ingot growth. 150mm can also be thinned to 25 micron if required. One or two flats are also available.

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150mm Silicon Wafer Growth is Strong

This is impressive growth, supported by a slowly growing variety of applications such as the manufacture of "More Moore's Devices." As long as we continue with the class of equipment mentioned here, it is clear that the future of 150 mm wafer technology is bright.

6 inch semiconductor wafer

Mechanical Grade Silicon Wafers Used in Neurobiological Research

Researchers from the Tata Institute of Fundamental Research in India are using our 150mm, mechanical grade, SSP silicon wafers in their work on Simple Microfluidic Devices. These devices are used for live cell imaging. The followng wafer was used for this research.

Si Item #478 - 150mm Mech Grade Si 650um SSP MECH

150mm Silicon for Testing of Wafer Handling Equipment

The following wafers wafers used by a major Solar OEM to test their wafer handling equipment.

Silicon Item: 857 - 150mm P /B <100> 0-10 620um SSP

150mm Silicon to Check the Surface Quality of Wafers in the Process of Production of Devices

Companies have used the following si wafer spec for production of test station to check the surface quality of wafers in the process of production of devices.

Item# 3465 - 150mm P-type Boron doped <100> 1-100 ohm-cm 625um SSP Test Grade

150mm Silicon Wafers Used in ESC for DRIE Tool

Researchers have used the following 150mm silicon substrate that are perfectly round, without flats and fit into their DRIE tool.

Si Item #3269
150mm P/B <100> 1-20 ohm-cnm 1000um SSP Prime Grade

Silicon Wafers Used to Analyze Surface Contamination

A scientist asked:

We are not looking for specific characteristics as thickness, diameter, doping, orientation, and so on. We just need to really know if the Test Grade is clean enough to work immediately as received, so that we can use the wafer surface to collect contamination and then analyze it. For this first trial we need just 25 wafers.

 UniversityWafer, Inc. Quoted and Sold the Following:

Si Item #857
6", 675um, SSP, P/B<100>, 1-10 ohm-cm, Prime Grade

150Mm Silicon Wafer Market Trends


As the business continues to undergo a number of changes, chip manufacturers will need to keep an eye on the silicon wafer industry, according to a new report from Cree Inc., which estimates that chip manufacturers "demand for 150mm wafers will approach $2 million. First, Cree's estimate is approaching $1 million for a 150mm wafer by 2023, based on an impressive CAGR of 110% from 2017 to 2026 and an even higher growth rate in the second half of the decade. Overall, demand for silicone wafer surfaces is forecast to grow by 1.5% annually until reaching 2.2 million in 2020, a significant increase over the current annual growth rate. Global shipments of silicon wafers increased faster than in the same period in 2016 compared to the first quarter of 2017. [Sources: 7, 8]

This huge growth is being seen in a device industry that is in its infancy and is limited to a wafer size of 150mm, but there are a number of hurdles that the market needs to overcome to increase sales. [Sources: 1, 7]

In a 2012 interview published in Semiconductor Engineering, lithographer Chris Mack explained that a 450 mm wafer would only reduce the cost of the die of a 300 mm wafer by 10 to 20 percent. In 2012, he claimed that only 10 to 20% had reduced the cost of matrices compared to 300 mm wafers, which are lithography-related. [Sources: 3, 4]

The conversion to a larger 450 mm wafer would reduce the price of the die by 10 to 20 percent, although the costs here are related to the number of wafers and not to their area. The cost of a silicon silon wafer with a diameter of 150 mm (or even 300 mm) has increased in recent years due to its size. [Sources: 3]

A study by Transparency Market Research expects the global silicon wafer market to continue on a steady path of registering a CAGR of 6.8% over the forecast period of 2017 to 2025. Indeed, the company says demand could lag behind demand from next year and remain tight until 2021. Silicon wafer suppliers have said the average selling price will be about $1,500 per square foot for 150 mm, allowing investment in a 300 mm extension. [Sources: 1, 8]

This is impressive growth, supported by a slowly growing variety of applications such as the manufacture of "More Moore's Devices." As long as we continue with the class of equipment mentioned here, it is clear that the future of 150 mm wafer technology is bright. [Sources: 7]

If you need more background on the language of this article, it was originally published in the October / November 2014 issue of the International Journal of Solid State Circuits. [Sources: 4]

F Furnace - Grade Test Wafers are a type of silicon wafer that differs from an ordinary silicon wafer in that it is not strictly related to the SEMI - M1 - 0302 protocol, but has also had a significant influence on the development of the current state - the art of solid state circuits. [Sources: 0, 6]

However, it complies with the surface metal level normally specified by the IC industry and the requirements of the SEMI protocol - M1 - 0302, such as thickness, width and thickness. [Sources: 5]

The Czochralski process is a method of growing high-purity crystals from semiconductors such as silicon and germanium. The high resistance of silicon is produced with a crucible that is not used for crystal growth, and the silicon crystals contain 5x1022 atoms per cm3. Other elements known as doping agents are often added, melted and melted to molten silicon, but the degenerated semiconductor is still no more than 99.9999% silicon. In comparison, the resistance of the other two most common silicon materials, gallium and cobalt, is around 32% and 66% respectively. Under sterile conditions, silicon melts to about 1.5% of its original state, or about 0.1%. [Sources: 2, 4, 7]

The iPhone X uses the 150mm GaAs substrate to produce RFFE RF components with the VCSEL facial recognition photodetector. Gallium can also be used as a semiconductor material for use in high-performance electronics such as cameras. P wafers can be doped with boron, which is the same as the p-structure, where the epi-wafer layer is of a different type. [Sources: 2, 5, 7]

Mechanical silicon wafers can be used for process development applications that are not sensitive to particles and surface defects. Manufacturers of semiconductor capital equipment also use process tests of silicon WAFers to develop and characterize semiconductor manufacturing processes. By using silicon test wafers as automation hardware, the system manufacturer simulates the process of production and end customers with the silicon wafer. [Sources: 6]

In terms of equipment, the silicon wafer market is divided into two categories: device and consumer level. This figure is the total size of the global silicon wafer market in volume and value. [Sources: 1, 7]

Prime wafers (Prime) are the highest possible quality silicon wafers, but different Prime wafers are used. There are three additional classifications of premium wafers designed for special process applications. [Sources: 2, 6]

 

 

Sources:


[1]: https://www.transparencymarketresearch.com/silicon-wafers-market.html

[2]: https://cleanroom.byu.edu/ew_wafer_specs

[3]: https://en.wikipedia.org/wiki/Wafer_(electronics)

[5]: https://www.sciencedirect.com/topics/engineering/silicon-wafer

[6]: https://www.advantivtech.com/wafers/silicon.html

[7]: https://www.appliedmaterials.com/en-in/node/3361906

[8]: https://semiengineering.com/silicon-wafers-ma-and-price-hikes/

150mm (6 Inch) Silicon Wafer Inventory

We have a large selection of 150mm Si wafers in stock and ready to ship. Please fill out the form if you need other specs and quantity. Below is just a small sample of what is in stock.

Item Dia Type Dopant Orien Res (Ohm-cm) Thick (um) Polish Grade Description
478 150mm N/A 650um SSP MECH Low cost Si Wafer great for spin coating.
857 150mm P B <100> 0-10 620 um SSP Test Test Grade Silicon great for wafer processing studies.
1025 150mm N <100> 0-100 625um SSP Test 6" diameter (150mm), silicon wafers, N-type.
2880 150mm P B <100> 0.006-0.012 525um SSP Test With Oxide Back Seal
3071 150mm P B <100> 1-100 500um SSP Test 2 SEMI-STD FLATS WHERE THE PRIMARY FLAT IS <110>
3175 150mm P B <111> 0-0.003 525um SSP Test No Certificate available, wafers sold "As-Is".

 

Item Qty in Material Orient. Diam Thck Polish Resistivity Comment
Stock (mm) (μm) Ωcm
1383 23 Undoped [100] 6" 650um SSP FZ >10,000 ohm-cm  
2476 100 N/P [100] 6" 675um SSP FZ 2,000-10,000ohm-cm Prime Grade, Float Zone (FZ)
857 500 p-type Si:B [100] 6" 625um P/E 0-100 ohm-cm Test Grade with flat
478 500 TYPE-ANY ANY 6" 625um P/E Resistivity-ANY Mech Grade with flat
2312 125 P/B [100] 6" 675um P/E 0.01-0.02 ohm-cm With EPI layer, Hard wetblast/LTO L.M.
2305 73 P/B [100] 6" 725um P/E 14-22 ohm-cm sd-soft laser mark
2306 120 P/B [100] 6" 635-715um P/E 10-30 ohm-cm 1 semi std. flat 
2307 75 P/B [100] 6" 650-700um P/E 10-30 ohm-cm 2 semi std flats 
2308 570 P/B [100] 6" 610-640um P/E 0.008-0.02 ohm-cm WITH EPI layer, poly bagged & labeled silicon wafers
2309 48 P/B [100] 6" 650-690um P/E 100-200 ohm-cm  
2310 425 N/P [100] 6" 625um P/E 56-72.5 ohm-cm Poly-SI
2311 100 P/B [100] 6" 675um P/E 15-25 ohm-cm Poly-SI L.M.
UW1972 86 N/Phos [100] 6" 320um P/E 2000-8000 ohm-cm Prime Grade, Float Zone (FZ)
E869 25 p-type Si:B [100] 6" 675 P/P FZ 10,000-20,000 SEMI Prime, 1Flat (57.5mm), Empak cst
5869 25 p-type Si:B [100] 6" 675 P/P FZ 5,000-20,000 SEMI Prime, 1Flat (57.5mm), Empak cst
6123 8 p-type Si:B [100] 6" 350 P/P FZ 2,700-3,250 SEMI Prime, 1Flat (57.5mm), Empak cst
G503 44 p-type Si:B [100] 6" 900 C/C FZ >50 SEMI Prime, 1Flat, MCC Lifetime>6,000μs, Empak cst
E239 1 n-type Si:P [100] 6" 825 C/C FZ 7,000-8,000 {7,025-7,856} SEMI, 1Flat, Lifetime=7,562μs, in Open Empak cst
E700 10 n-type Si:P [100-6° towards[111]] ±0.5° 6" 675 P/P FZ >3,500 SEMI Prime, 1Flat (57.5mm), Empak cst
F700 5 n-type Si:P [100-6° towards[111]] ±0.5° 6" 790 ±10 C/C FZ >3,500 SEMI, 1Flat, Empak cst
4982 19 n-type Si:P [100-6° towards[111]] ±0.5° 6" 675 P/P FZ >1,000 SEMI Prime, Notch on <010> {not on <011>}, Laser Mark, Empak cst
D982 1 n-type Si:P [100-6° towards[111]] ±0.5° 6" 675 BROKEN FZ >1,000 SEMI notch Test, Empak cst, Broken into many large pieces. One piece ~50% of wafers other pieces ~20% of wafer
5325 5 n-type Si:P [100] 6" 725 P/P FZ 50-70 {57-62} SEMI Prime, 1Flat (57.5mm), Lifetime=15,799μs, Empak cst
E325 5 n-type Si:P [100] 6" 725 P/P FZ 50-70 SEMI Prime, 1Flat (57.5mm), Empak cst
N445 7 n-type Si:P [112-5.0° towards[11-1]] ±0.5° 6" 875 ±10 E/E FZ >3,000 SEMI, 1Flat (47.5mm), TTV<4μm, Surface Chips
G343 25 n-type Si:P [112-5° towards[11-1]] ±0.5° 6" 1,000 ±10 C/C FZ >3,000 SEMI, 1 JEIDA Flat (47.5mm), Empak cst, TTV<4μm, Lifetime>1,000μs
5822 3 Intrinsic Si:- [100] 6" 575 P/P FZ >10,000 SEMI Prime, 1Flat (57.5mm), MCC Lifetime>1,200µs, Empak cst
6178 4 Intrinsic Si:- [100] 6" 675 P/P FZ >10,000 SEMI notch Prime, Empak cst
E179 1 Intrinsic Si:- [111] ±0.5° 6" 750 E/E FZ >10,000 SEMI notch, TEST (defects, cannot be polished out), Empak cst
G458 5 p-type Si:B [110] ±0.5° 6" 390 ±10 C/C >10 Prime, 2Flats, Empak cst
3882 35 p-type Si:B [100] 6" 675 P/E 50-150 SEMI Prime, 1Flat (57.5mm), Empak cst
6287 300 p-type Si:B [100] 6" 675 P/E 5-10 SEMI Prime, 1Flat (57.5mm), Empak cst
5929 6 p-type Si:B [100] 6" 400 P/P 1-30 SEMI Prime, 1Flat (57.5mm), Empak cst, TTV<5μm
5686 8 p-type Si:B [100] 6" 415 ±15 P/P 1-30 SEMI Prime, 1Flat (57.5mm), Empak cst
5354 6 p-type Si:B [100-9.7° towards[001]] ±0.1° 6" 525 P/P 1-100 SEMI Prime, 1Flat (57.5mm), Empak cst
S5838 12 p-type Si:B [100] ±1° 6" 575 P/P 1-20 SEMI Prime, 1Flat (57.5mm), Empak cst, TTV<2μm
O698 12 p-type Si:B [100] 6" 675 P/P 1-100 SEMI Test, Both sides dirty and scratched, 1Flat, Empak cst
5421 25 p-type Si:B [100] 6" 675 P/E 1-10 {4.5-6.5} SEMI notch Prime, Empak cst, TTV<7μm
N698 12 p-type Si:B [100] 6" 675 P/E 1-100 SEMI Prime, 1Flat, Empak cst
5733 28 p-type Si:B [100] 6" 750 ±10 E/E 1-5 SEMI, 1Flat, Soft cst
6049 5 p-type Si:B [100] 6" 2,000 P/P 1-35 SEMI Prime, 1Flat (57.5mm), Empak cst
6096 8 p-type Si:B [100] 6" 400 ±15 P/P 0.5-1.0 SEMI Prime, 1Flat (57.5mm), Empak cst
S5834 4 p-type Si:B [100] 6" 365 ±10 E/E 0.01-0.02 SEMI Prime, 1Flat (57.5mm), TTV<2μm, Empak cst
F770 4 p-type Si:B [100-6° towards[111]] ±0.5° 6" 675 P/P 0.01-0.02 SEMI Prime, 1Flat (57.5mm), Empak cst, Both sides with scratches
E770 12 p-type Si:B [100-6° towards[111]] ±0.5° 6" 675 P/E 0.01-0.02 SEMI Prime, 1Flat (57.5mm), Empak cst, Both sides polished but only front is Prime
Y206 11 p-type Si:B [100] 6" 675 P/E 0.01-0.02 SEMI Prime, 1Flat (57.5mm), Empak cst
6005 3 p-type Si:B [100] 6" 320 P/E 0.001-0.030 JEIDA Prime, Empak cst
D005 10 p-type Si:B [100] 6" 320 P/E 0.001-0.030 JEIDA Prime, Empak cst
6237 100 p-type Si:B [100] 6" 675 P/P 0.001-0.005 SEMI, 1Flat (57.5mm), Empak cst
9023 21 p-type Si:B [111-4.0°] ±0.5° 6" 625 P/E 4-15 {7.1-8.8} SEMI Prime, 1 JEIDA Flat(47.5mm), Empak cst
I324 100 n-type Si:P [100] 6" 725 P/P 5-35 SEMI Prime, 1 JEIDA Flat(47.5mm), TTV<2μm, TIR<1μm, Bow<10μm, Warp<20μm, With Laser Mark, Empak cst
5814 100 n-type Si:P [100] 6" 925 ±15 E/E 5-35 JEIDA Prime, Empak cst, TTV<5μm
5728 24 n-type Si:P [100] 6" 675 P/E 2.7-4.0 SEMI Prime, in Empak cassettes of 24 wafers
B728 13 n-type Si:P [100] 6" 675 P/E 2.7-4.0 SEMI Prime, in Empak cassettes of 6 & 7 wafers
S5837 25 n-type Si:P [100] 6" 250 ±5 P/P 1-3 SEMI Prime, 1Flat (57.5mm), TTV<2μm, Empak cst
S5644 18 n-type Si:P [100-4° towards[110]] ±0.5° 6" 675 P/E 1-25 SEMI Prime, 1Flat(57.5mm), Empak cst
S5913 1 n-type Si:P [100] ±1° 6" 800 P/E 1-10 SEMI Prime, 1Flat(57.5mm), Empak cst
F859 46 n-type Si:P [100-25° towards[110]] ±1° 6" 800 C/C 1-100 SEMI notch Prime, Empak cst
E089 2 n-type Si:P [100] 6" 1,910 ±10 P/P 1-100 SEMI Prime, 1Flat (57.5mm), Individual cst, TTV<2μm
F089 1 n-type Si:P [100] 6" 1,910 ±10 P/P 1-100 SEMI Prime, 1Flat (57.5mm), Individual cst, TTV<5μm
H727 4 n-type Si:P [100] 6" 3,000 P/P 1-100 SEMI Prime, 1Flat (57.5mm), Empak cst
M176 3 n-type Si:P [100] 6" 5,000 P/P 1-25 Prime, NO Flats, Individual cst
5252 12 n-type Si:Sb [100-6° towards[110]] ±0.5° 6" 675 P/P 0.01-0.02 SEMI Prime, 1Flat (57.5mm), Empak cst
C673 170 n-type Si:Sb [100] 6" 675 P/E 0.008-0.020 SEMI Prime, 1Flat (57.5mm), Empak cst
2533 2 n-type Si:As [100] 6" 1,000 L/L 0.0033-0.0037 SEMI, 1Flat(57.5mm), in individual wafer cassettes
E533 1 n-type Si:As [100] 6" 1,000 L/L 0.0033-0.0037 SEMI, 1Flat(57.5mm), in individual wafer cassettes
4204 89 n-type Si:As [100] 6" 675 P/EOx 0.001-0.005 SEMI Prime, 1Flat (57.5mm), Empak cst, backside LTO 0.6um, TTV<3μm, Bow/Warp<15μm
5541 218 n-type Si:P [100] 6" 675 P/EOx 0.001-0.002 SEMI Prime, 1Flat (57.5mm), with strippable Epi layer Si:P (0.32-0.46)Ohmcm, 3.20±0.16μm thick, Empak cst
D339 20 n-type Si:P [111] ±0.5° 6" 675 P/E 1-100 SEMI Prime, NO Flats, Empak cst
1660 19 n-type Si:As [100] 6" 675 OxP/EOx 0.001-0.005 SEMI TEST (spots & minor visual defects), 1Flat (57.5mm), Thermal Oxide 0.1μm±5% thick, Empak cst
H503 50 p-type Si:B [100] 6" 735 P/P FZ >50 Prime, 1Flat, Empak cst, TTV<2μm
K343 25 n-type Si:P [112-5° towards[11-1]] ±0.5° 6" 800 ±10 P/P FZ >3,000 SEMI, 1 JEIDA Flat (47.5mm), Empak cst, TTV<4μm, Lifetime>1,000μs
L343 25 n-type Si:P [112-5° towards[11-1]] ±0.5° 6" 950 ±10 P/P FZ >3,000 SEMI, 1 JEIDA Flat (47.5mm), Empak cst, TTV<4μm, Lifetime>1,000μs
H178 2 Intrinsic Si:- [100] 6" 675 P/P FZ >10,000 SEMI notch Prime, Empak cst
G264 3 p-type Si:B [100] 6" 675 P/P 1-5 SEMI Prime, 1Flat, Soft cst

150mm Silicon Wafer Dopants Available

Boron Doped Silicon Wafers

150mm (6") Antimony Doped Silicon Wafers

150mm (6") Arsenic Doped Silicon Wafers

150mm (6") Undoped Silicon Wafers

150mm (6") Gallium Doped Silicon Wafers

Industrial Temperature Sensors

We have the Silicon Wafers for industrial temperature sensors applications. Below is what clients have chosen for their research.

150mm
P/B
(100)
>20,000 ohm-cm
300um
SSP
Prime Grade
150mm
N/Ph
(100)
1-5 ohm-cm
500um
SSP
Prime
150mm
P/B
(100)
1-15 ohm-cm
350um
SSP
Prime Grade

Please contact us for pricing.