150mm Silicon Wafers
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150mm (6 Inch) Silicon Wafers
We have a large selection of 150mm Si wafers in stock and ready to ship. Please fill out the form if you need other specs and quantity.
| Item | Dia | Type | Dopant | Orien | Res (Ohm-cm) | Thick (um) | Polish | Grade | Description |
|---|---|---|---|---|---|---|---|---|---|
| 478 | 150mm | N/A | 650um | SSP | MECH | Low cost Si Wafer great for spin coating. | |||
| 857 | 150mm | P | B | <100> | 0-10 | 620 um | SSP | Test | Test Grade Silicon great for wafer processing studies. |
| 1025 | 150mm | N | <100> | 0-100 | 625um | SSP | Test | 6" diameter (150mm), silicon wafers, N-type. | |
| 2880 | 150mm | P | B | <100> | 0.006-0.012 | 525um | SSP | Test | With Oxide Back Seal |
| 3071 | 150mm | P | B | <100> | 1-100 | 500um | SSP | Test | 2 SEMI-STD FLATS WHERE THE PRIMARY FLAT IS <110> |
| 3175 | 150mm | P | B | <111> | 0-0.003 | 525um | SSP | Test | No Certificate available, wafers sold "As-Is". |
| Item | Qty in | Material | Orient. | Diam | Thck | Surf. | Resistivity | Comment |
| Stock | (mm) | (μm) | Ωcm | |||||
| 1383 | 23 | Undoped | [100] | 6" | 650um | SSP | FZ >10,000 ohm-cm | |
| 2476 | 100 | N/P | [100] | 6" | 675um | SSP | FZ 2,000-10,000ohm-cm | Prime Grade, Float Zone (FZ) |
| 857 | 500 | p-type Si:B | [100] | 6" | 625um | P/E | 0-100 ohm-cm | Test Grade with flat |
| 478 | 500 | TYPE-ANY | ANY | 6" | 625um | P/E | Resistivity-ANY | Mech Grade with flat |
| 2312 | 125 | P/B | [100] | 6" | 675um | P/E | 0.01-0.02 ohm-cm | With EPI layer, Hard wetblast/LTO L.M. |
| 2305 | 73 | P/B | [100] | 6" | 725um | P/E | 14-22 ohm-cm | sd-soft laser mark |
| 2306 | 120 | P/B | [100] | 6" | 635-715um | P/E | 10-30 ohm-cm | 1 semi std. flat |
| 2307 | 75 | P/B | [100] | 6" | 650-700um | P/E | 10-30 ohm-cm | 2 semi std flats |
| 2308 | 570 | P/B | [100] | 6" | 610-640um | P/E | 0.008-0.02 ohm-cm | WITH EPI layer, poly bagged & labeled silicon wafers |
| 2309 | 48 | P/B | [100] | 6" | 650-690um | P/E | 100-200 ohm-cm | |
| 2310 | 425 | N/P | [100] | 6" | 625um | P/E | 56-72.5 ohm-cm | Poly-SI |
| 2311 | 100 | P/B | [100] | 6" | 675um | P/E | 15-25 ohm-cm | Poly-SI L.M. |
| UW1972 | 86 | N/Phos | [100] | 6" | 320um | P/E | 2000-8000 ohm-cm | Prime Grade, Float Zone (FZ) |
| E869 | 25 | p-type Si:B | [100] | 6" | 675 | P/P | FZ 10,000-20,000 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| 5869 | 25 | p-type Si:B | [100] | 6" | 675 | P/P | FZ 5,000-20,000 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| 6123 | 8 | p-type Si:B | [100] | 6" | 350 | P/P | FZ 2,700-3,250 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| G503 | 44 | p-type Si:B | [100] | 6" | 900 | C/C | FZ >50 | SEMI Prime, 1Flat, MCC Lifetime>6,000μs, Empak cst |
| E239 | 1 | n-type Si:P | [100] | 6" | 825 | C/C | FZ 7,000-8,000 {7,025-7,856} | SEMI, 1Flat, Lifetime=7,562μs, in Open Empak cst |
| E700 | 10 | n-type Si:P | [100-6° towards[111]] ±0.5° | 6" | 675 | P/P | FZ >3,500 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| F700 | 5 | n-type Si:P | [100-6° towards[111]] ±0.5° | 6" | 790 ±10 | C/C | FZ >3,500 | SEMI, 1Flat, Empak cst |
| 4982 | 19 | n-type Si:P | [100-6° towards[111]] ±0.5° | 6" | 675 | P/P | FZ >1,000 | SEMI Prime, Notch on <010> {not on <011>}, Laser Mark, Empak cst |
| D982 | 1 | n-type Si:P | [100-6° towards[111]] ±0.5° | 6" | 675 | BROKEN | FZ >1,000 | SEMI notch Test, Empak cst, Broken into many large pieces. One piece ~50% of wafers other pieces ~20% of wafer |
| 5325 | 5 | n-type Si:P | [100] | 6" | 725 | P/P | FZ 50-70 {57-62} | SEMI Prime, 1Flat (57.5mm), Lifetime=15,799μs, Empak cst |
| E325 | 5 | n-type Si:P | [100] | 6" | 725 | P/P | FZ 50-70 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| N445 | 7 | n-type Si:P | [112-5.0° towards[11-1]] ±0.5° | 6" | 875 ±10 | E/E | FZ >3,000 | SEMI, 1Flat (47.5mm), TTV<4μm, Surface Chips |
| G343 | 25 | n-type Si:P | [112-5° towards[11-1]] ±0.5° | 6" | 1,000 ±10 | C/C | FZ >3,000 | SEMI, 1 JEIDA Flat (47.5mm), Empak cst, TTV<4μm, Lifetime>1,000μs |
| 5822 | 3 | Intrinsic Si:- | [100] | 6" | 575 | P/P | FZ >10,000 | SEMI Prime, 1Flat (57.5mm), MCC Lifetime>1,200µs, Empak cst |
| 6178 | 4 | Intrinsic Si:- | [100] | 6" | 675 | P/P | FZ >10,000 | SEMI notch Prime, Empak cst |
| E179 | 1 | Intrinsic Si:- | [111] ±0.5° | 6" | 750 | E/E | FZ >10,000 | SEMI notch, TEST (defects, cannot be polished out), Empak cst |
| G458 | 5 | p-type Si:B | [110] ±0.5° | 6" | 390 ±10 | C/C | >10 | Prime, 2Flats, Empak cst |
| 3882 | 35 | p-type Si:B | [100] | 6" | 675 | P/E | 50-150 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| 6287 | 300 | p-type Si:B | [100] | 6" | 675 | P/E | 5-10 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| 5929 | 6 | p-type Si:B | [100] | 6" | 400 | P/P | 1-30 | SEMI Prime, 1Flat (57.5mm), Empak cst, TTV<5μm |
| 5686 | 8 | p-type Si:B | [100] | 6" | 415 ±15 | P/P | 1-30 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| 5354 | 6 | p-type Si:B | [100-9.7° towards[001]] ±0.1° | 6" | 525 | P/P | 1-100 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| S5838 | 12 | p-type Si:B | [100] ±1° | 6" | 575 | P/P | 1-20 | SEMI Prime, 1Flat (57.5mm), Empak cst, TTV<2μm |
| O698 | 12 | p-type Si:B | [100] | 6" | 675 | P/P | 1-100 | SEMI Test, Both sides dirty and scratched, 1Flat, Empak cst |
| 5421 | 25 | p-type Si:B | [100] | 6" | 675 | P/E | 1-10 {4.5-6.5} | SEMI notch Prime, Empak cst, TTV<7μm |
| N698 | 12 | p-type Si:B | [100] | 6" | 675 | P/E | 1-100 | SEMI Prime, 1Flat, Empak cst |
| 5733 | 28 | p-type Si:B | [100] | 6" | 750 ±10 | E/E | 1-5 | SEMI, 1Flat, Soft cst |
| 6049 | 5 | p-type Si:B | [100] | 6" | 2,000 | P/P | 1-35 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| 6096 | 8 | p-type Si:B | [100] | 6" | 400 ±15 | P/P | 0.5-1.0 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| S5834 | 4 | p-type Si:B | [100] | 6" | 365 ±10 | E/E | 0.01-0.02 | SEMI Prime, 1Flat (57.5mm), TTV<2μm, Empak cst |
| F770 | 4 | p-type Si:B | [100-6° towards[111]] ±0.5° | 6" | 675 | P/P | 0.01-0.02 | SEMI Prime, 1Flat (57.5mm), Empak cst, Both sides with scratches |
| E770 | 12 | p-type Si:B | [100-6° towards[111]] ±0.5° | 6" | 675 | P/E | 0.01-0.02 | SEMI Prime, 1Flat (57.5mm), Empak cst, Both sides polished but only front is Prime |
| Y206 | 11 | p-type Si:B | [100] | 6" | 675 | P/E | 0.01-0.02 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| 6005 | 3 | p-type Si:B | [100] | 6" | 320 | P/E | 0.001-0.030 | JEIDA Prime, Empak cst |
| D005 | 10 | p-type Si:B | [100] | 6" | 320 | P/E | 0.001-0.030 | JEIDA Prime, Empak cst |
| 6237 | 100 | p-type Si:B | [100] | 6" | 675 | P/P | 0.001-0.005 | SEMI, 1Flat (57.5mm), Empak cst |
| 9023 | 21 | p-type Si:B | [111-4.0°] ±0.5° | 6" | 625 | P/E | 4-15 {7.1-8.8} | SEMI Prime, 1 JEIDA Flat(47.5mm), Empak cst |
| I324 | 100 | n-type Si:P | [100] | 6" | 725 | P/P | 5-35 | SEMI Prime, 1 JEIDA Flat(47.5mm), TTV<2μm, TIR<1μm, Bow<10μm, Warp<20μm, With Laser Mark, Empak cst |
| 5814 | 100 | n-type Si:P | [100] | 6" | 925 ±15 | E/E | 5-35 | JEIDA Prime, Empak cst, TTV<5μm |
| 5728 | 24 | n-type Si:P | [100] | 6" | 675 | P/E | 2.7-4.0 | SEMI Prime, in Empak cassettes of 24 wafers |
| B728 | 13 | n-type Si:P | [100] | 6" | 675 | P/E | 2.7-4.0 | SEMI Prime, in Empak cassettes of 6 & 7 wafers |
| S5837 | 25 | n-type Si:P | [100] | 6" | 250 ±5 | P/P | 1-3 | SEMI Prime, 1Flat (57.5mm), TTV<2μm, Empak cst |
| S5644 | 18 | n-type Si:P | [100-4° towards[110]] ±0.5° | 6" | 675 | P/E | 1-25 | SEMI Prime, 1Flat(57.5mm), Empak cst |
| S5913 | 1 | n-type Si:P | [100] ±1° | 6" | 800 | P/E | 1-10 | SEMI Prime, 1Flat(57.5mm), Empak cst |
| F859 | 46 | n-type Si:P | [100-25° towards[110]] ±1° | 6" | 800 | C/C | 1-100 | SEMI notch Prime, Empak cst |
| E089 | 2 | n-type Si:P | [100] | 6" | 1,910 ±10 | P/P | 1-100 | SEMI Prime, 1Flat (57.5mm), Individual cst, TTV<2μm |
| F089 | 1 | n-type Si:P | [100] | 6" | 1,910 ±10 | P/P | 1-100 | SEMI Prime, 1Flat (57.5mm), Individual cst, TTV<5μm |
| H727 | 4 | n-type Si:P | [100] | 6" | 3,000 | P/P | 1-100 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| M176 | 3 | n-type Si:P | [100] | 6" | 5,000 | P/P | 1-25 | Prime, NO Flats, Individual cst |
| 5252 | 12 | n-type Si:Sb | [100-6° towards[110]] ±0.5° | 6" | 675 | P/P | 0.01-0.02 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| C673 | 170 | n-type Si:Sb | [100] | 6" | 675 | P/E | 0.008-0.020 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| 2533 | 2 | n-type Si:As | [100] | 6" | 1,000 | L/L | 0.0033-0.0037 | SEMI, 1Flat(57.5mm), in individual wafer cassettes |
| E533 | 1 | n-type Si:As | [100] | 6" | 1,000 | L/L | 0.0033-0.0037 | SEMI, 1Flat(57.5mm), in individual wafer cassettes |
| 4204 | 89 | n-type Si:As | [100] | 6" | 675 | P/EOx | 0.001-0.005 | SEMI Prime, 1Flat (57.5mm), Empak cst, backside LTO 0.6um, TTV<3μm, Bow/Warp<15μm |
| 5541 | 218 | n-type Si:P | [100] | 6" | 675 | P/EOx | 0.001-0.002 | SEMI Prime, 1Flat (57.5mm), with strippable Epi layer Si:P (0.32-0.46)Ohmcm, 3.20±0.16μm thick, Empak cst |
| D339 | 20 | n-type Si:P | [111] ±0.5° | 6" | 675 | P/E | 1-100 | SEMI Prime, NO Flats, Empak cst |
| 1660 | 19 | n-type Si:As | [100] | 6" | 675 | OxP/EOx | 0.001-0.005 | SEMI TEST (spots & minor visual defects), 1Flat (57.5mm), Thermal Oxide 0.1μm±5% thick, Empak cst |
| H503 | 50 | p-type Si:B | [100] | 6" | 735 | P/P | FZ >50 | Prime, 1Flat, Empak cst, TTV<2μm |
| K343 | 25 | n-type Si:P | [112-5° towards[11-1]] ±0.5° | 6" | 800 ±10 | P/P | FZ >3,000 | SEMI, 1 JEIDA Flat (47.5mm), Empak cst, TTV<4μm, Lifetime>1,000μs |
| L343 | 25 | n-type Si:P | [112-5° towards[11-1]] ±0.5° | 6" | 950 ±10 | P/P | FZ >3,000 | SEMI, 1 JEIDA Flat (47.5mm), Empak cst, TTV<4μm, Lifetime>1,000μs |
| H178 | 2 | Intrinsic Si:- | [100] | 6" | 675 | P/P | FZ >10,000 | SEMI notch Prime, Empak cst |
| G264 | 3 | p-type Si:B | [100] | 6" | 675 | P/P | 1-5 | SEMI Prime, 1Flat, Soft cst |