150mm Silicon Wafers all Diameters and Specifications
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When were 150mm Silicon Wafers Introduced?
Introduced in 1983, 150mm (5.9 inch, usually referred to as "6 inch") are either undoped, boron doped, phosphorous doped, arsenic doped, antimony doped and can have low or high-doping. Orientation can be (100), (111), (110). 150mm wafers can use the CZ or FZ method for ingot growth. 150mm can also be thinned to 25 micron if required. One or two flats are also available.
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Mechanical Grade Silicon Wafers Used in Neurobiological Research
Researchers from the Tata Institute of Fundamental Research in India are using our 150mm, mechanical grade, SSP silicon wafers in their work on Simple Microfluidic Devices. These devices are used for live cell imaging. The followng wafer was used for this research.
Si Item #478 - 150mm Mech Grade Si 650um SSP MECH
150mm Silicon for Testing of Wafer Handling Equipment
The following wafers wafers used by a majore Solar OEM to test their wafer handling equipment.
Silicon Item: 857 - 150mm P /B <100> 0-10 620um SSP
150mm Silicon to Check the Surface Quality of Wafers in the Process of Production of Devices
Companies have used the following si wafer spec for production of test station to check the surface quality of wafers in the process of production of devices.
Item# 3465 - 150mm P-type Boron doped <100> 1-100 ohm-cm 625um SSP Test Grade
150mm Silicon Wafers Used in ESC for DRIE Tool
Researchers have used the following 150mm silicon substrate that are perfectly round, without flats and fit into their DRIE tool.
Si Item #3269
150mm P/B <100> 1-20 ohm-cnm 1000um SSP Prime Grade
150mm (6 Inch) Silicon Wafer Inventory
We have a large selection of 150mm Si wafers in stock and ready to ship. Please fill out the form if you need other specs and quantity. Below is just a small sample of what is in stock.
| Item | Dia | Type | Dopant | Orien | Res (Ohm-cm) | Thick (um) | Polish | Grade | Description |
|---|---|---|---|---|---|---|---|---|---|
| 478 | 150mm | N/A | 650um | SSP | MECH | Low cost Si Wafer great for spin coating. | |||
| 857 | 150mm | P | B | <100> | 0-10 | 620 um | SSP | Test | Test Grade Silicon great for wafer processing studies. |
| 1025 | 150mm | N | <100> | 0-100 | 625um | SSP | Test | 6" diameter (150mm), silicon wafers, N-type. | |
| 2880 | 150mm | P | B | <100> | 0.006-0.012 | 525um | SSP | Test | With Oxide Back Seal |
| 3071 | 150mm | P | B | <100> | 1-100 | 500um | SSP | Test | 2 SEMI-STD FLATS WHERE THE PRIMARY FLAT IS <110> |
| 3175 | 150mm | P | B | <111> | 0-0.003 | 525um | SSP | Test | No Certificate available, wafers sold "As-Is". |
| Item | Qty in | Material | Orient. | Diam | Thck | Polish | Resistivity | Comment |
| Stock | (mm) | (μm) | Ωcm | |||||
| 1383 | 23 | Undoped | [100] | 6" | 650um | SSP | FZ >10,000 ohm-cm | |
| 2476 | 100 | N/P | [100] | 6" | 675um | SSP | FZ 2,000-10,000ohm-cm | Prime Grade, Float Zone (FZ) |
| 857 | 500 | p-type Si:B | [100] | 6" | 625um | P/E | 0-100 ohm-cm | Test Grade with flat |
| 478 | 500 | TYPE-ANY | ANY | 6" | 625um | P/E | Resistivity-ANY | Mech Grade with flat |
| 2312 | 125 | P/B | [100] | 6" | 675um | P/E | 0.01-0.02 ohm-cm | With EPI layer, Hard wetblast/LTO L.M. |
| 2305 | 73 | P/B | [100] | 6" | 725um | P/E | 14-22 ohm-cm | sd-soft laser mark |
| 2306 | 120 | P/B | [100] | 6" | 635-715um | P/E | 10-30 ohm-cm | 1 semi std. flat |
| 2307 | 75 | P/B | [100] | 6" | 650-700um | P/E | 10-30 ohm-cm | 2 semi std flats |
| 2308 | 570 | P/B | [100] | 6" | 610-640um | P/E | 0.008-0.02 ohm-cm | WITH EPI layer, poly bagged & labeled silicon wafers |
| 2309 | 48 | P/B | [100] | 6" | 650-690um | P/E | 100-200 ohm-cm | |
| 2310 | 425 | N/P | [100] | 6" | 625um | P/E | 56-72.5 ohm-cm | Poly-SI |
| 2311 | 100 | P/B | [100] | 6" | 675um | P/E | 15-25 ohm-cm | Poly-SI L.M. |
| UW1972 | 86 | N/Phos | [100] | 6" | 320um | P/E | 2000-8000 ohm-cm | Prime Grade, Float Zone (FZ) |
| E869 | 25 | p-type Si:B | [100] | 6" | 675 | P/P | FZ 10,000-20,000 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| 5869 | 25 | p-type Si:B | [100] | 6" | 675 | P/P | FZ 5,000-20,000 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| 6123 | 8 | p-type Si:B | [100] | 6" | 350 | P/P | FZ 2,700-3,250 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| G503 | 44 | p-type Si:B | [100] | 6" | 900 | C/C | FZ >50 | SEMI Prime, 1Flat, MCC Lifetime>6,000μs, Empak cst |
| E239 | 1 | n-type Si:P | [100] | 6" | 825 | C/C | FZ 7,000-8,000 {7,025-7,856} | SEMI, 1Flat, Lifetime=7,562μs, in Open Empak cst |
| E700 | 10 | n-type Si:P | [100-6° towards[111]] ±0.5° | 6" | 675 | P/P | FZ >3,500 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| F700 | 5 | n-type Si:P | [100-6° towards[111]] ±0.5° | 6" | 790 ±10 | C/C | FZ >3,500 | SEMI, 1Flat, Empak cst |
| 4982 | 19 | n-type Si:P | [100-6° towards[111]] ±0.5° | 6" | 675 | P/P | FZ >1,000 | SEMI Prime, Notch on <010> {not on <011>}, Laser Mark, Empak cst |
| D982 | 1 | n-type Si:P | [100-6° towards[111]] ±0.5° | 6" | 675 | BROKEN | FZ >1,000 | SEMI notch Test, Empak cst, Broken into many large pieces. One piece ~50% of wafers other pieces ~20% of wafer |
| 5325 | 5 | n-type Si:P | [100] | 6" | 725 | P/P | FZ 50-70 {57-62} | SEMI Prime, 1Flat (57.5mm), Lifetime=15,799μs, Empak cst |
| E325 | 5 | n-type Si:P | [100] | 6" | 725 | P/P | FZ 50-70 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| N445 | 7 | n-type Si:P | [112-5.0° towards[11-1]] ±0.5° | 6" | 875 ±10 | E/E | FZ >3,000 | SEMI, 1Flat (47.5mm), TTV<4μm, Surface Chips |
| G343 | 25 | n-type Si:P | [112-5° towards[11-1]] ±0.5° | 6" | 1,000 ±10 | C/C | FZ >3,000 | SEMI, 1 JEIDA Flat (47.5mm), Empak cst, TTV<4μm, Lifetime>1,000μs |
| 5822 | 3 | Intrinsic Si:- | [100] | 6" | 575 | P/P | FZ >10,000 | SEMI Prime, 1Flat (57.5mm), MCC Lifetime>1,200µs, Empak cst |
| 6178 | 4 | Intrinsic Si:- | [100] | 6" | 675 | P/P | FZ >10,000 | SEMI notch Prime, Empak cst |
| E179 | 1 | Intrinsic Si:- | [111] ±0.5° | 6" | 750 | E/E | FZ >10,000 | SEMI notch, TEST (defects, cannot be polished out), Empak cst |
| G458 | 5 | p-type Si:B | [110] ±0.5° | 6" | 390 ±10 | C/C | >10 | Prime, 2Flats, Empak cst |
| 3882 | 35 | p-type Si:B | [100] | 6" | 675 | P/E | 50-150 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| 6287 | 300 | p-type Si:B | [100] | 6" | 675 | P/E | 5-10 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| 5929 | 6 | p-type Si:B | [100] | 6" | 400 | P/P | 1-30 | SEMI Prime, 1Flat (57.5mm), Empak cst, TTV<5μm |
| 5686 | 8 | p-type Si:B | [100] | 6" | 415 ±15 | P/P | 1-30 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| 5354 | 6 | p-type Si:B | [100-9.7° towards[001]] ±0.1° | 6" | 525 | P/P | 1-100 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| S5838 | 12 | p-type Si:B | [100] ±1° | 6" | 575 | P/P | 1-20 | SEMI Prime, 1Flat (57.5mm), Empak cst, TTV<2μm |
| O698 | 12 | p-type Si:B | [100] | 6" | 675 | P/P | 1-100 | SEMI Test, Both sides dirty and scratched, 1Flat, Empak cst |
| 5421 | 25 | p-type Si:B | [100] | 6" | 675 | P/E | 1-10 {4.5-6.5} | SEMI notch Prime, Empak cst, TTV<7μm |
| N698 | 12 | p-type Si:B | [100] | 6" | 675 | P/E | 1-100 | SEMI Prime, 1Flat, Empak cst |
| 5733 | 28 | p-type Si:B | [100] | 6" | 750 ±10 | E/E | 1-5 | SEMI, 1Flat, Soft cst |
| 6049 | 5 | p-type Si:B | [100] | 6" | 2,000 | P/P | 1-35 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| 6096 | 8 | p-type Si:B | [100] | 6" | 400 ±15 | P/P | 0.5-1.0 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| S5834 | 4 | p-type Si:B | [100] | 6" | 365 ±10 | E/E | 0.01-0.02 | SEMI Prime, 1Flat (57.5mm), TTV<2μm, Empak cst |
| F770 | 4 | p-type Si:B | [100-6° towards[111]] ±0.5° | 6" | 675 | P/P | 0.01-0.02 | SEMI Prime, 1Flat (57.5mm), Empak cst, Both sides with scratches |
| E770 | 12 | p-type Si:B | [100-6° towards[111]] ±0.5° | 6" | 675 | P/E | 0.01-0.02 | SEMI Prime, 1Flat (57.5mm), Empak cst, Both sides polished but only front is Prime |
| Y206 | 11 | p-type Si:B | [100] | 6" | 675 | P/E | 0.01-0.02 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| 6005 | 3 | p-type Si:B | [100] | 6" | 320 | P/E | 0.001-0.030 | JEIDA Prime, Empak cst |
| D005 | 10 | p-type Si:B | [100] | 6" | 320 | P/E | 0.001-0.030 | JEIDA Prime, Empak cst |
| 6237 | 100 | p-type Si:B | [100] | 6" | 675 | P/P | 0.001-0.005 | SEMI, 1Flat (57.5mm), Empak cst |
| 9023 | 21 | p-type Si:B | [111-4.0°] ±0.5° | 6" | 625 | P/E | 4-15 {7.1-8.8} | SEMI Prime, 1 JEIDA Flat(47.5mm), Empak cst |
| I324 | 100 | n-type Si:P | [100] | 6" | 725 | P/P | 5-35 | SEMI Prime, 1 JEIDA Flat(47.5mm), TTV<2μm, TIR<1μm, Bow<10μm, Warp<20μm, With Laser Mark, Empak cst |
| 5814 | 100 | n-type Si:P | [100] | 6" | 925 ±15 | E/E | 5-35 | JEIDA Prime, Empak cst, TTV<5μm |
| 5728 | 24 | n-type Si:P | [100] | 6" | 675 | P/E | 2.7-4.0 | SEMI Prime, in Empak cassettes of 24 wafers |
| B728 | 13 | n-type Si:P | [100] | 6" | 675 | P/E | 2.7-4.0 | SEMI Prime, in Empak cassettes of 6 & 7 wafers |
| S5837 | 25 | n-type Si:P | [100] | 6" | 250 ±5 | P/P | 1-3 | SEMI Prime, 1Flat (57.5mm), TTV<2μm, Empak cst |
| S5644 | 18 | n-type Si:P | [100-4° towards[110]] ±0.5° | 6" | 675 | P/E | 1-25 | SEMI Prime, 1Flat(57.5mm), Empak cst |
| S5913 | 1 | n-type Si:P | [100] ±1° | 6" | 800 | P/E | 1-10 | SEMI Prime, 1Flat(57.5mm), Empak cst |
| F859 | 46 | n-type Si:P | [100-25° towards[110]] ±1° | 6" | 800 | C/C | 1-100 | SEMI notch Prime, Empak cst |
| E089 | 2 | n-type Si:P | [100] | 6" | 1,910 ±10 | P/P | 1-100 | SEMI Prime, 1Flat (57.5mm), Individual cst, TTV<2μm |
| F089 | 1 | n-type Si:P | [100] | 6" | 1,910 ±10 | P/P | 1-100 | SEMI Prime, 1Flat (57.5mm), Individual cst, TTV<5μm |
| H727 | 4 | n-type Si:P | [100] | 6" | 3,000 | P/P | 1-100 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| M176 | 3 | n-type Si:P | [100] | 6" | 5,000 | P/P | 1-25 | Prime, NO Flats, Individual cst |
| 5252 | 12 | n-type Si:Sb | [100-6° towards[110]] ±0.5° | 6" | 675 | P/P | 0.01-0.02 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| C673 | 170 | n-type Si:Sb | [100] | 6" | 675 | P/E | 0.008-0.020 | SEMI Prime, 1Flat (57.5mm), Empak cst |
| 2533 | 2 | n-type Si:As | [100] | 6" | 1,000 | L/L | 0.0033-0.0037 | SEMI, 1Flat(57.5mm), in individual wafer cassettes |
| E533 | 1 | n-type Si:As | [100] | 6" | 1,000 | L/L | 0.0033-0.0037 | SEMI, 1Flat(57.5mm), in individual wafer cassettes |
| 4204 | 89 | n-type Si:As | [100] | 6" | 675 | P/EOx | 0.001-0.005 | SEMI Prime, 1Flat (57.5mm), Empak cst, backside LTO 0.6um, TTV<3μm, Bow/Warp<15μm |
| 5541 | 218 | n-type Si:P | [100] | 6" | 675 | P/EOx | 0.001-0.002 | SEMI Prime, 1Flat (57.5mm), with strippable Epi layer Si:P (0.32-0.46)Ohmcm, 3.20±0.16μm thick, Empak cst |
| D339 | 20 | n-type Si:P | [111] ±0.5° | 6" | 675 | P/E | 1-100 | SEMI Prime, NO Flats, Empak cst |
| 1660 | 19 | n-type Si:As | [100] | 6" | 675 | OxP/EOx | 0.001-0.005 | SEMI TEST (spots & minor visual defects), 1Flat (57.5mm), Thermal Oxide 0.1μm±5% thick, Empak cst |
| H503 | 50 | p-type Si:B | [100] | 6" | 735 | P/P | FZ >50 | Prime, 1Flat, Empak cst, TTV<2μm |
| K343 | 25 | n-type Si:P | [112-5° towards[11-1]] ±0.5° | 6" | 800 ±10 | P/P | FZ >3,000 | SEMI, 1 JEIDA Flat (47.5mm), Empak cst, TTV<4μm, Lifetime>1,000μs |
| L343 | 25 | n-type Si:P | [112-5° towards[11-1]] ±0.5° | 6" | 950 ±10 | P/P | FZ >3,000 | SEMI, 1 JEIDA Flat (47.5mm), Empak cst, TTV<4μm, Lifetime>1,000μs |
| H178 | 2 | Intrinsic Si:- | [100] | 6" | 675 | P/P | FZ >10,000 | SEMI notch Prime, Empak cst |
| G264 | 3 | p-type Si:B | [100] | 6" | 675 | P/P | 1-5 | SEMI Prime, 1Flat, Soft cst |
150mm Silicon Wafer Dopants Available
Boron Doped Silicon Wafers