(111) Silicon Wafer Orientation
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(111) Silicon Wafers
Please see below for just a short list of the (111) Silicon Substrates that we have in stock and ready to ship. If you don't see what you need then please email us your specs.
| Diam | Material | Orient. | Thck | Surf. | Resistivity | Comment |
| (mm) | Dopant | (μm) | Ωcm | |||
| 6" | n-type Si:P | [111] ±0.5° | 300 ±15 | P/P | FZ >6,000 | SEMI Prime, 1Flat (57.5mm), Lifetime>1,000μs, Empak cst |
| 6" | n-type Si:P | [111] ±0.5° | 300 ±15 | P/P | FZ >6,000 | SEMI Prime, 1Flat (57.5mm), Lifetime>1,000μs, Empak cst |
| 6" | Intrinsic Si:- | [111] ±0.5° | 750 | E/E | FZ >10,000 | SEMI notch, TEST (defects, cannot be polished out), Empak cst |
| 6" | p-type Si:B | [111-4.0°] ±0.5° | 625 | P/E | 4-15 {7.1-8.8} | SEMI Prime, 1 JEIDA Flat(47.5mm), Empak cst |
| 6" | n-type Si:P | [111] ±0.5° | 675 | P/E | 1-100 | SEMI Prime, NO Flats, Empak cst |
| 6" | Intrinsic Si:- | [111] ±0.5° | 675 | C/C | FZ >10,000 | SEMI notch, Empak cst |
| 5" | n-type Si:P | [111] ±0.1° | 200 ±15 | BROKEN | FZ >3,000 | Broken L/L wafers, in 2 pieces |
| 5" | n-type Si:P | [111] | 300 ±15 | P/E | FZ 1,000-3,000 | SEMI Prime, in hard cassettes of 8 wafers |
| 5" | n-type Si:Sb | [111-3.0°] ±0.5° | 625 | P/E | 0.015-0.020 {0.0152-0.0185} | SEMI Prime, 2Flats, Empak cst |
| 4" | p-type Si:B | [111] ±0.5° | 400 ±15 | P/E | FZ >20,000 | SEMI Prime, 1Flat, Empak cst, TTV<5μm, Lifetime>1,000μs |
| 4" | p-type Si:B | [111] ±0.5° | 397 | P/E | FZ 10,000-15,000 | SEMI Prime, Backside ACID Etched, Empak cst |
| 4" | n-type Si:P | [111] ±0.25° | 675 | P/E | FZ 10,000-20,000 | SEMI TEST (Light scratches), 1Flat, Lifetime>1,000μs, Empak cst, |
| 4" | n-type Si:P | [111] ±0.5° | 500 | P/E | FZ 10,000-15,000 | SEMI Prime, 1Flat, Empak cst, TTV<5μm |
| 4" | n-type Si:P | [111] ±0.5° | 675 | P/E | FZ >7,000 | SEMI, 1Flat, in Empak, Lifetime>1,600μs |
| 4" | n-type Si:P | [111] ±0.5° | 675 | P/E | FZ >7,000 | SEMI TEST (Scratches, in Unsealed Empak cassette), 1Flat, Lifetime>1,600μs |
| 4" | n-type Si:P | [111] ±0.5° | 675 | P/E | FZ >7,000 | SEMI, 1Flat, Lifetime>1,600μs, in Empak cassettes of 6 and 8 wafers |
| 4" | n-type Si:P | [111] ±0.5° | 630 | P/G | FZ >7,000 | SEMI Prime, 1Flat, in Empak, Lifetime>1,000μs, Back-side Fine Ground |
| 4" | n-type Si:P | [111] ±0.25° | 675 | P/E | FZ 7,000-10,000 | SEMI Prime, 1Flat, in Empak, Lifetime>1,000μs, Light scratches |
| 4" | n-type Si:P | [111] ±0.5° | 150 ±10 | BROKEN | FZ 5,000-10,000 | Broken P/E wafers, in Empak |
| 4" | n-type Si:P | [111] ±0.25° | 675 | P/E | FZ 5,000-7,000 | SEMI Prime, 1Flat, in Empak, Lifetime>1,000μs |
| 4" | n-type Si:P | [111] ±0.25° | 675 | P/E | FZ 5,000-7,000 | SEMI TEST (light scratches), 1Flat, Lifetime>1,000μs, in Empak |
| 4" | n-type Si:P | [111] ±0.5° | 525 | P/E | FZ >5,000 | SEMI Prime, 1Flat, Lifetime>1,000μs, Empak cst |
| 4" | n-type Si:P | [111-1° towards[110]] ±0.5° | 525 | P/E | FZ >5,000 | SEMI TEST (scratches on back-side), 1Flat, Empak cst |
| 4" | n-type Si:P | [111] ±0.25° | 525 | P/E | FZ 3,000-5,000 | SEMI TEST (light scratches), 1Flat, Empak cst |
| 4" | n-type Si:P | [111] ±0.25° | 525 | P/E | FZ 3,000-5,000 | SEMI Prime, 1Flat, in Empak cassettes of 3, 3 & 4 wafers |
| 4" | n-type Si:P | [111] ±0.5° | 525 | P/P | FZ >3,000 | SEMI Prime, 2Flats, Lifetime>1,000μs, Empak cst |
| 4" | n-type Si:P | [111] ±0.5° | 525 | P/P | FZ >3,000 | SEMI Prime, 2Flats, Lifetime>1,000μs, in Empak cassettes of 5, & 10 wafers |
| 4" | n-type Si:P | [111] ±0.5° | 525 | P/P | FZ >3,000 | SEMI Prime, 1Flat (32.5mm) |
| 4" | n-type Si:P | [111] ±0.5° | 285 ±10 | P/P | FZ 2,500-2,700 | SEMI Prime, 2Flats, Empak cst |
| 4" | n-type Si:P | [111] ±0.5° | 290 ±10 | P/P | FZ 2,500-3,500 | SEMI TEST (Surface defects), 2Flats, Empak cst |
| 4" | n-type Si:P | [111] ±1° | 380 | P/E | FZ 2,000-3,000 | SEMI Prime, 1Flat, TTV<5μm, Lifetime>1,000μs, in Epak cassettes of 6 wafers |
| 4" | n-type Si:P | [111] ±0.5° | 525 | P/E | FZ 1,500-3,000 | SEMI Prime, 1Flat, in Empak, Lifetime>1,100μs |
| 4" | n-type Si:P | [111] ±0.5° | 525 | P/E | FZ 430-550 | SEMI Prime, 1Flat, Empak cst, TTV<7μm |
| 4" | n-type Si:P | [111] ±0.5° | 525 | P/E | FZ 430-550 | SEMI Prime, 1Flat, Empak cst, TTV<7μm |
| 4" | n-type Si:P | [111] ±0.5° | 500 ±13 | E/E | FZ 6.03-7.37 | SEMI, 2Flats |
| 4" | Intrinsic Si:- | [111] ±0.5° | 500 | P/P | FZ >25,000 | SEMI Prime, 1Flat, Empak cst |
| 4" | Intrinsic Si:- | [111] ±0.5° | 300 | P/E | FZ 20,000-40,000 | SEMI, 1Flat, TTV<5μm, Empak cst |
| 4" | Intrinsic Si:- | [111] ±0.5° | 500 | P/E | FZ >20,000 | SEMI Prime, 1Flat, Empak cst, Extra 3 free non-prime wafers included with 4 prime wafers |
| 4" | Intrinsic Si:- | [111] ±0.5° | 450 | P/P | FZ >20,000 | SEMI Prime, 1Flat, Empak cst |
| 4" | Intrinsic Si:- | [111] ±0.5° | 500 | P/P | FZ >10,000 | SEMI Prime, 1Flat, Empak cst |
| 4" | p-type Si:B | [111] | 350 | P/E | 2-3 | Prime, NO Flats, Empak cst |
| 4" | p-type Si:B | [111] ±0.5° | 1,000 | P/E | 1-10 | SEMI Prime, 1Flat, in hard cassettes of 7 & 8 wafers |
| 4" | p-type Si:B | [111] | 1,000 | P/P | 1-10 | SEMI Prime, 1Flat, Empak cst, Cassettes of 10 and 10 wafers |
| 4" | p-type Si:B | [111] | 1,000 | P/P | 1-10 | SEMI Prime, 1Flat, Empak cst |
| 4" | p-type Si:B | [111] ±0.5° | 525 | P/P | 0.2-1.0 | SEMI Prime, 1Flat, in Empak cassettes of 6, 7 & 7 wafers |
| 4" | p-type Si:B | [111-4°] ±0.5° | 525 | P/E | 0.01-0.02 | SEMI Prime, 1Flat, Empak cst |
| 4" | p-type Si:B | [111-4°] ±0.5° | 525 ±15 | P/EOx | 0.005-0.015 {0.0086-0.0135} | SEMI Prime, 1Flat, Empak cst, TTV<5μm, 5,000A LTO on back-side |
| 4" | p-type Si:B | [111-3°] ±0.5° | 525 | P/E | 0.002-0.016 | SEMI Prime, 1Flat, in Empak cassettes of 4, 5 & 5 wafers |
| 4" | p-type Si:B | [111-3°] | 525 | P/E | 0.002-0.004 | SEMI Prime, 1Flat, Empak cst |
| 4" | ShowShoppingCartTally(); p-type Si:B | [111] ±0.5° | 1,000 | P/E | <0.01 | SEMI Prime, 1Flat, Empak cst |