The easiest way is to take a hammer and nail to the wafer! Put the nail on the wafer's center. Hit the nail with the hammer. If the wafer breaks into four pieces, the the crystal orienation is (100). If the wafer shatters, then it's (111).
Please see below for just a short list of the (111) Silicon Substrates that we have in stock and ready to ship. If you don't see what you need then please email us your specs.
Dia (mm) | Type/Dopant | Type/Dopant | Thck (μm) | Polish | Resistivity Ωcm | Specs |
6" | n-type Si:P | [111] ±0.5° | 300 ±15 | P/P | FZ >6,000 | SEMI Prime, 1Flat (57.5mm), Lifetime>1,000μs, Empak cst |
6" | n-type Si:P | [111] ±0.5° | 300 ±15 | P/P | FZ >6,000 | SEMI Prime, 1Flat (57.5mm), Lifetime>1,000μs, Empak cst |
6" | Intrinsic Si:- | [111] ±0.5° | 750 | E/E | FZ >10,000 | SEMI notch, TEST (defects, cannot be polished out), Empak cst |
6" | P/B | [111-4.0°] ±0.5° | 625 | P/E | 4-15 {7.1-8.8} | SEMI Prime, 1 JEIDA Flat(47.5mm), Empak cst |
6" | n-type Si:P | [111] ±0.5° | 675 | P/E | 1-100 | SEMI Prime, NO Flats, Empak cst |
6" | Intrinsic Si:- | [111] ±0.5° | 675 | C/C | FZ >10,000 | SEMI notch, Empak cst |
5" | n-type Si:P | [111] ±0.1° | 200 ±15 | BROKEN | FZ >3,000 | Broken L/L wafers, in 2 pieces |
5" | n-type Si:P | [111] | 300 ±15 | P/E | FZ 1,000-3,000 | SEMI Prime, in hard cassettes of 8 wafers |
5" | n-type Si:Sb | [111-3.0°] ±0.5° | 625 | P/E | 0.015-0.020 {0.0152-0.0185} | SEMI Prime, 2Flats, Empak cst |
4" | P/B | [111] ±0.5° | 400 ±15 | P/E | FZ >20,000 | SEMI Prime, 1Flat, Empak cst, TTV<5μm, Lifetime>1,000μs |
4" | P/B | [111] ±0.5° | 397 | P/E | FZ 10,000-15,000 | SEMI Prime, Backside ACID Etched, Empak cst |
4" | n-type Si:P | [111] ±0.25° | 675 | P/E | FZ 10,000-20,000 | SEMI TEST (Light scratches), 1Flat, Lifetime>1,000μs, Empak cst, |
4" | n-type Si:P | [111] ±0.5° | 500 | P/E | FZ 10,000-15,000 | SEMI Prime, 1Flat, Empak cst, TTV<5μm |
4" | n-type Si:P | [111] ±0.5° | 675 | P/E | FZ >7,000 | SEMI, 1Flat, in Empak, Lifetime>1,600μs |
4" | n-type Si:P | [111] ±0.5° | 675 | P/E | FZ >7,000 | SEMI TEST (Scratches, in Unsealed Empak cassette), 1Flat, Lifetime>1,600μs |
4" | n-type Si:P | [111] ±0.5° | 675 | P/E | FZ >7,000 | SEMI, 1Flat, Lifetime>1,600μs, in Empak cassettes of 6 and 8 wafers |
4" | n-type Si:P | [111] ±0.5° | 630 | P/G | FZ >7,000 | SEMI Prime, 1Flat, in Empak, Lifetime>1,000μs, Back-side Fine Ground |
4" | n-type Si:P | [111] ±0.25° | 675 | P/E | FZ 7,000-10,000 | SEMI Prime, 1Flat, in Empak, Lifetime>1,000μs, Light scratches |
4" | n-type Si:P | [111] ±0.5° | 150 ±10 | BROKEN | FZ 5,000-10,000 | Broken P/E wafers, in Empak |
4" | n-type Si:P | [111] ±0.25° | 675 | P/E | FZ 5,000-7,000 | SEMI Prime, 1Flat, in Empak, Lifetime>1,000μs |
4" | n-type Si:P | [111] ±0.25° | 675 | P/E | FZ 5,000-7,000 | SEMI TEST (light scratches), 1Flat, Lifetime>1,000μs, in Empak |
4" | n-type Si:P | [111] ±0.5° | 525 | P/E | FZ >5,000 | SEMI Prime, 1Flat, Lifetime>1,000μs, Empak cst |
4" | n-type Si:P | [111-1° towards[110]] ±0.5° | 525 | P/E | FZ >5,000 | SEMI TEST (scratches on back-side), 1Flat, Empak cst |
4" | n-type Si:P | [111] ±0.25° | 525 | P/E | FZ 3,000-5,000 | SEMI TEST (light scratches), 1Flat, Empak cst |
4" | n-type Si:P | [111] ±0.25° | 525 | P/E | FZ 3,000-5,000 | SEMI Prime, 1Flat, in Empak cassettes of 3, 3 & 4 wafers |
4" | n-type Si:P | [111] ±0.5° | 525 | P/P | FZ >3,000 | SEMI Prime, 2Flats, Lifetime>1,000μs, Empak cst |
4" | n-type Si:P | [111] ±0.5° | 525 | P/P | FZ >3,000 | SEMI Prime, 2Flats, Lifetime>1,000μs, in Empak cassettes of 5, & 10 wafers |
4" | n-type Si:P | [111] ±0.5° | 525 | P/P | FZ >3,000 | SEMI Prime, 1Flat (32.5mm) |
4" | n-type Si:P | [111] ±0.5° | 285 ±10 | P/P | FZ 2,500-2,700 | SEMI Prime, 2Flats, Empak cst |
4" | n-type Si:P | [111] ±0.5° | 290 ±10 | P/P | FZ 2,500-3,500 | SEMI TEST (Surface defects), 2Flats, Empak cst |
4" | n-type Si:P | [111] ±1° | 380 | P/E | FZ 2,000-3,000 | SEMI Prime, 1Flat, TTV<5μm, Lifetime>1,000μs, in Epak cassettes of 6 wafers |
4" | n-type Si:P | [111] ±0.5° | 525 | P/E | FZ 1,500-3,000 | SEMI Prime, 1Flat, in Empak, Lifetime>1,100μs |
4" | n-type Si:P | [111] ±0.5° | 525 | P/E | FZ 430-550 | SEMI Prime, 1Flat, Empak cst, TTV<7μm |
4" | n-type Si:P | [111] ±0.5° | 525 | P/E | FZ 430-550 | SEMI Prime, 1Flat, Empak cst, TTV<7μm |
4" | n-type Si:P | [111] ±0.5° | 500 ±13 | E/E | FZ 6.03-7.37 | SEMI, 2Flats |
4" | Intrinsic Si:- | [111] ±0.5° | 500 | P/P | FZ >25,000 | SEMI Prime, 1Flat, Empak cst |
4" | Intrinsic Si:- | [111] ±0.5° | 300 | P/E | FZ 20,000-40,000 | SEMI, 1Flat, TTV<5μm, Empak cst |
4" | Intrinsic Si:- | [111] ±0.5° | 500 | P/E | FZ >20,000 | SEMI Prime, 1Flat, Empak cst, Extra 3 free non-prime wafers included with 4 prime wafers |
4" | Intrinsic Si:- | [111] ±0.5° | 450 | P/P | FZ >20,000 | SEMI Prime, 1Flat, Empak cst |
4" | Intrinsic Si:- | [111] ±0.5° | 500 | P/P | FZ >10,000 | SEMI Prime, 1Flat, Empak cst |
4" | P/B | [111] | 350 | P/E | 2-3 | Prime, NO Flats, Empak cst |
4" | P/B | [111] ±0.5° | 1,000 | P/E | 1-10 | SEMI Prime, 1Flat, in hard cassettes of 7 & 8 wafers |
4" | P/B | [111] | 1,000 | P/P | 1-10 | SEMI Prime, 1Flat, Empak cst, Cassettes of 10 and 10 wafers |
4" | P/B | [111] | 1,000 | P/P | 1-10 | SEMI Prime, 1Flat, Empak cst |
4" | P/B | [111] ±0.5° | 525 | P/P | 0.2-1.0 | SEMI Prime, 1Flat, in Empak cassettes of 6, 7 & 7 wafers |
4" | P/B | [111-4°] ±0.5° | 525 | P/E | 0.01-0.02 | SEMI Prime, 1Flat, Empak cst |
4" | P/B | [111-4°] ±0.5° | 525 ±15 | P/EOx | 0.005-0.015 {0.0086-0.0135} | SEMI Prime, 1Flat, Empak cst, TTV<5μm, 5,000A LTO on back-side |
4" | P/B | [111-3°] ±0.5° | 525 | P/E | 0.002-0.016 | SEMI Prime, 1Flat, in Empak cassettes of 4, 5 & 5 wafers |
4" | P/B | [111-3°] | 525 | P/E | 0.002-0.004 | SEMI Prime, 1Flat, Empak cst |
4" | ShowShoppingCartTally(); P/B | [111] ±0.5° | 1,000 | P/E | <0.01 | SEMI Prime, 1Flat, Empak cst |