Double Side Polished (DSP) Silicon Wafers TTV < 1 micron
Double Side Polished (DSP) Silicon Wafers
We have a large selection of ultra-flat double side polished prime grade and test grade silicon wafers in all diameters, thickness, orientation and resistivities. We have Total Thickness Variations as tight as 1 micron TTV in stock.
In order to increase the flatness of a silicon wafer is to polish the back-side of the wafer. The double side polishiing helps reduce the roughness of the silicon wafer surfaces. This is a must when making MEMS devices where super flat and low roughness specs are required.
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Gettering and Double Side Polished Silicon Wafers
It is interesting to note that borosilicate (BSG) and phosphosilicate (PSG) glass when contacting heated silicon are very good at removing a silicon wafer's deep impurities.
Double Side Polishing a must fror ultra-thin-silicon wafers.
We can make single side polished silicon wafers to 50 micron with tight TTV, but thinner than this requires the more expensive back side polishing to keep the wafers from warping.
Use double side polished silicon wafers when you need tighter TTV, BOW and WARP tolerances.
Below are just some of the double side polished wafers with the tightest TTV
The following are CZ Wafers unless otherwise noted. The wafers are SEMI prime with either a one or two flats or notch. The Total Thickness Variation is <1 μm, Bow <5μm, Warp, <10μm. All the wafers are Prime grade and are shipped in sealed hard plastic cassettes.
| Item | Type/Dop | Ori. | Dia(mm) | Thk(μm) | Polish | Res Ωcm |
| 6971 | n-type Si:P | [100-25° towards[110] ±1° | 6" | 675 | DSP | 1-100 |
| S5594 | p-type Si:B | [100] | 5" | 990 ±8 | DSP | 1-25 |
| D868 | p-type Si:B | [100] | 5" | 590 | DSP | 1-30 |
| F709 | n-type Si:P | [100] | 5" | 762 ±12 | DSP | 5-35 |
| S6284 | n-type Si:P | [100] ±1° | 4" | 200 ±10 | DSP | FZ >1,000 |
| G706 | Intrinsic Si:- | [100] | 4" | 500 | DSP | FZ >20,000 |
| 6356 | Intrinsic Si:- | [100] | 4" | 500 | DSP | FZ >20,000 |
| J302 | p-type Si:B | [100] | 4" | 600 | DSP | 1-50 |
| 7089 | p-type Si:B | [100] | 4" | 381 ±7 | DSP | 0.014-0.021 |
| F022 | p-type Si:B | [111] ±0.3° | 4" | 350 ±5 | DSP | <0.05 |
| 6570 | n-type Si:P | [100] | 4" | 400 | DSP | 1-10 |
| 4975 | n-type Si:Sb | [211] ±0.5° | 4" | 1,500 ±15 | DSP | 0.01-0.02 |
| S962 | Intrinsic Si:- | [100] | 4" | 525 | DSP | FZ >20,000 |
| D796 | p-type Si:B | [100] | 4" | 500 | DSP | 1-30 |
| L302 | p-type Si:B | [100] | 4" | 625 | DSP | 1-50 |
| Q787 | p-type Si:B | [111] ±0.5° | 4" | 350 | DSP | 0.001-0.005 |
| J066 | n-type Si:P | [100] | 4" | 500 | DSP | 1-100 |
| 4154 | p-type Si:B | [110] ±0.5° | 3" | 360 | DSP | 1-10 |
| 6826 | p-type Si:B | [100] | 3" | 475 | DSP | 1-50 |
| D750 | p-type Si:B | [100] | 3" | 420 | DSP | <1 |
| S5580 | n-type Si:P | [100] ±1° | 3" | 2,286 ±13 | DSP | 15-28 |
| S5824 | n-type Si:P | [100] ±1° | 3" | 300 ±10 | DSP | 5-15 |
| 6400 | n-type Si:P | [100] | 3" | 350 | DSP | 1-25 |
| 6818 | n-type Si:P | [100] | 3" | 381 | DSP | 1-30 |
| H988 | p-type Si:B | [100] | 3" | 580 | DSP | 1-100 |