100mm Silicon Wafers All Grades, Orientation, Resistivity

university wafer substrates

We have one of the world's largest selection of 100mm (4") silicon wafers

We have wafers with Total Thickness Varations (TTV) <1 micron in stock. We also sell 100mm Silicon Ingots.

We can dice your 100mm Silicon Wafers into any dimension and can laser the wafer into any diameter.

We have all grades including:

We also have 100mm wafer that can be used as Carrier Wafers for all your wafer bonding needs.

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Fabricating Organic Electronic Devices

The most common material used in the fabrication of organic electronic devices is a 100mm silicon wafer. This material is extremely cost-effective and can be fabricated in a number of ways. The most common method is the deposition of a thin film on a wafer. The process is similar to the fabrication of a conventional device, except that the process is completely automated. The process requires the use of a specialized machine that specializes in making organic electronics.

Scientists have purchased the 100mm Silicon Wafers with Thermal oxide for researching the fabrication of organic electronic devices.

100mm P/B (100) 0.001-0.005 ohm-cm 500um Prime Grade with 100nm of Thermal Oxide

100mm P/B (100) 0.001-0.005 ohm-cm 500um Prime Grade with 300nm of Thermal Oxide

Silicon Wafers for Prototype and Process Development

Researchers have used the following wafers to test new manufacturing techniques inhouse and to create novel devices.

Si Item #783 - 100mm P/B <100> 1-10 ohm-cm 500um SSP Prime

Silicon Wafers for LIDAR Components & Systems

The high-precision 100mm silicon wafers are a valuable source of LIDAR component production. They are also highly sensitive to light. Currently, the 100mm silicon wafers are used for both optical and electromagnetic measurements. The technology is used for both indoor and outdoor LIDAR applications. These technologies are crucial for the autonomous driving of commercial vehicles. The use of 300mm CMOS is expected to greatly increase the accuracy of the sensors.

The accuracy of this technology will be important to the automotive industry. With a 0.1-degree angular resolution, it will be a key component in autonomous vehicles. It will also make it easier to detect objects moving at a distance. The automotive industry is still at the early stage of development and has not standardized its requirements for LiDAR, although the market is growing steadily.

Reseach into space based LIDAR include in orbit surface metrology systems deployable reflectors to measure the shape of antennas during operation with high accuracy and important for extreme performace throughput satellite missions.

Scientists have used the following wafers for their LIDAR research.

Si Item #3384
100mm P/B <100> 0.01-0.02 ohm-cm DSP 550um +/- 15um, TTV:<15um Prime Grade

100mm Silicon Wafers for Biosensor Medical Applications

100mm silicon wafers are an inexpensive option for biosensor research. 100mm wafers allow for the development of biosensors with high sensitivity. For biomedical applications, the CMOS circuitry on the 100mm silicon wafers will be a crucial part of the medical diagnostic system. The high-quality wafers will allow the detection of the smallest amounts of blood in the body.

University scientists have used the following wafer specs to microfabricate an electrochemical biosensor for their medical research.

Si Item #1116 - 100mm P/B (100) 10-20 ohm-cm 500um SSP Prime with 500nm of Wet Thermal Oxide

The research client also used the following borofloat.

Silicon Wafers for Photolithography

Using 100mm silicon wafers for Photolithography is a popular way to improve the quality of the images created on the surface of the wafers. It is a cost-effective method for producing the thin films required for a variety of high-quality photolithography. Its advantages far outweigh its disadvantages. In addition to being cheaper, the RCA clean method ensures a high quality silicon surface.

Scientists haved used the following test grade wafers for phtotolithography research.

Si Item #452
100mm P(100) 0-100 ohm-cm SSP 500um Test Grade

100mm Silicon Wafers for Fabricating Nanostructures

100mm silicon wafers is an essential component for making complex nanostructures. In this process, the nanostructures are made by transferring a layer of thin films onto the silicon surface. This enables the fabrication of multiple layers with high aspect ratios. The technology is also advantageous for the manufacture of biosensors. With these materials, we can build a device that is compatible with different types of materials.

Researchers have used 3 inch and 4 inch silicon wafers extensively for fabricating nanostructures. The substrates were used for polymer spin coating, followed by metal deposition and processing techniques like lithography and plasma etching.

Researcher Quote:

I have only worked with 3 inch and 4 inch silicon wafers and carried out the aforementioned processes to design and characterize nanostructures and high resolution patterning.

Carrier Wafers for RIE Etching Process 

For the RIE etching process, a silicon carrier wafer of 100mm must be used. The thickness of the sample must be less than 2 mm. The resistivity of a wafer has no bearing on the transfer time. The process can last as long as the top silicon layer is present. A suitable etching time should be kept. The RIE etching machine should be equipped with a high-speed pump, a tunable laser, and a vacuum pump.

When specs are not imporant, scientists have used the following test grade and mechanical grade wafers for their research.

  • 100 mm diameter, round
  • Flat: none
  • Doping type: B or P but not As
  • Resistivity: 0-10 ohm-cm
  • Thickness 400 or 500 um
  • Orientation doesn’t matter
  • Grade: virgin test, test, mechanical (but without particles)
  • Single side polishedand DSP

Silicon Wafers for Microelectronics Research & Development

100mm silicon wafers for Microelectronics Research & Development aims to make a better product. A large volume of silicon wafers will increase the efficiency of your research by a factor of two. By investing in 100mm silicon wares for microelectronics research and development, you'll be able to make smarter devices faster and more efficiently.

Researchers have used the following item in the Microelectronics R&D

Si Item #3528 - 100mm N/P <111> 36-44 ohm-cm 220um DSP

Wafers Used to Fabricate Sensors and Telecom Devices

Besides being used to manufacture sensor and telecom devices, 100mm silicon wafers are an excellent choice for all high-tech applications. 100mm wafers are used in the fabrication of ultra-high-performance optical components, such as infrared lasers. Moreover, they are suitable for a variety of industries, including aerospace and defense. For this reason, they are a good choice for many high-performance semiconductors.

Scientists have used the following silicon items for their process development work and researching prototypes for sensors and telecom devices.

Degenerately doped Si Wafer Item #785

100mm P/B <100> 0.001-0.005 ohm-cm 500um SSP Prime Grade

Which Wafer Spec Should I use for Dielectric Test Coatings?

The 100mm silicon wafers for Dielectric Test Coatings (DTC) are available for testing and calibration purposes. For DTC, they are used for both research and commercial purposes. Both semiconductor materials and optical devices have different strengths and weaknesses. If the surface is highly accurate, it will not cause distortion and will last a long time. In addition, these products should be fabricated in order to ensure that they meet quality standards.

Scientists have used the following silicon wafer specification to perform dielectric test coatings and thin film thickness measurements.

Si Item #452 - 100mm P(100) 0-100 ohm-cm SSP 500um Test Grade

What Substrates Should I Use to Fabricate Microfluidics Molds

One of the biggest questions that microfluidics researchers have is what 100mm silicon wafer specs are used in fabricating their molds. Typically, a microfluidics device requires 100mm or higher channel features and a thickness ranging from 2.4 to 5.2 m. To achieve these requirements, researchers made laminated microfluidic devices from PMMA sheets. The wafers were then structured using a CO 2 laser and bonded with ethanol. In order to align the layers, custom holders were used to hold the chips while they were fabricated. To make the process faster and easier, a manual press was used at 1.6 MPa pressure and 70 degC.

Scientists have used the following 100mm wafer spec for their microfluidics research.

Si Wafer Item #783
4” P/B (100) 500um SSP 1-10 ohm-cm Prime Grade

 

Mechanical Grade Silicon Wafers to Fabricate Channel Mold

A postdoc has successfully used our least expensive mechanical grade silicon wafers to fabricate channel mold and do research experiments in their lab.

Si item #1196

What Silicon Wafers Should I Use to Fabricate Electrodes Used in Lithium Ion Batteries

One of the most important questions when fabricating a lithium-ion battery is, "What Silicon Wafers to use?" This answer will help you understand the different types of electrodes. Previously, battery researchers used whole bulk silicon to make an anode, while today, researchers are using carbon-based electrodes. The main differences are in the material used, the resistivity, and the chemistry.

Please contact us for wafers that are currently used in lithium-ion battery research.

Silicon Wafers for Anomalous Interfacial Structuring of a Non-Halogenated Ionic Liquid (IL): Effect of Substrate and Temperature Research

Control of ionic liquid interfacial structures is critical for many IL applications. These applications include energy storage, sensors, and advanced lubrication technologies. Using an ionic liquid as a fuel, we studied the ionic fluid behavior at three different surface charges. Fluorinated anions produce halides that are toxic to humans and environmentally harmful to the environment.

 

The Authors of the research used the folllowing wafers:

 

Buy Online Item #452 - 100mm P(100) 0-100 ohm-cm SSP 500um Test Grade


Research Paper

 

Thermal Management of Micro-Gas Chromatograph

A micro gas chromatograph (mGC) is a system designed to detect air pollutants at parts-per-billion concentrations. The system includes a preconcentrator microfabricated from MEMS, a MEMS separation column, a flow control unit, and thermal management circuitry. It is designed to detect benzene, toluene, and tetrachloroethylene.

 

Buy Online Item #452 - 100mm P(100) 0-100 ohm-cm SSP 500um Test Grade


Research Paper

What Wafers Are Used for Chemical Sensing Systems that Utilize Soft Electronics on Thin Elastomeric Substrates with Open Cellular Design Research?

Stretchable electronics are electronic devices which use elastomeric substrates for the fabrication of flexible electronics. The elastomeric substrate plays an important role in achieving stretchability without compromising its conductivity. The elastomeric substrate should possess superior mechanical and electrical properties and must be flexible enough to withstand various loading modes. This study aimed at developing an elastomeric adhesive that meets the necessary mechanical and electrical properties.

 

UniversityWafer, Inc. Provided the 100mm Silicon Wafers used in the above research.

 

Video Explaining Elastomeric Substrates

Silicon Wafers for Hybrid Piezo/Magnetic Electromechanical Transformer

Scientists have been researching electromechanical devices using either piezoelectric or electrodynamic transductionhave been proposed as an alternative to conventional magnetic transformers. Research paper found here.

 

For this project researchers purchased the following 100mm silicon wafers.

  • electromechanical transformer
  • electrodynamic transduction
  • piezoelectric transduction

Si Item #3190
100mm P/B <100> 1-10 300um DSP

Reference #ONLQ22956 for pricing.

buy 100mm silicon wafers for scientific research today

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100mm (4 Inch) Silicon Wafers

CLICK HERE TO BUY ONLINE!

We have a large selection of 100mm Si wafers in stock and ready to ship. Please fill out the form if you need other specs and quantity.

Item Dia Type Dopant Orie Res (Ohm-cm) Thick (um) Polish Grade

The ever-versatile 4" Test-Grade. One of our most popular items! Client use for many purposes including carrier and cleaning wafers for etch processes.

Best Seller!
452 100mm P B <100> 0-100 500um SSP Test

Double-Side Polished Silicon Wafers at affordable prices!

453 100mm P B <100> 0-100 500um DSP Test
589 100mm N P <100> 0-100 500um DSP Test
775 100mm P B <100> 1 - 10 500um DSP Prime
1095 100mm N P <100> 1-10 525um DSP Prime
1095 100mm N P <100> 1-10 525um DSP Prime
1115 100mm P B <100> 10-20 500um DSP Prime

Silicon wafers, N-type, Test Grade

590 100mm N P <100> 0-100 500um SSP Test
809 100mm N P <100> 1-10 500um SSP Prime

Degenerately doped silicon. Double side polished wafers also available.

1113 100mm N As <100> .001-.005 500 um SSP Prime
785 100mm P B <100> .001 - .005 525um SSP Prime
783 100mm P B <100> 1 - 10 500um SSP Prime

Prime Grade Lifetime >1,200us, Surface Roughness <5A

2901 23 P/Boron [100] 100mm 200um DSP FZ >1000  
1114 100mm P B <100> 5-10 380um SSP
1115 100mm P B <100> 10-20 500um DSP Prime
1116 100mm P B <100> 10-20 500um SSP Prime

MECHANICAL GRADE, When you just need a 4 Inch Substrate

1196 100mm ANY ANY ANY >500um SSP MECH
1248 100mm N P <100> 10-9999 240-260um E/E
1249 100mm P B <100> 10-9999 240-260um E/E
1317 100mm P B <100> 1-20 1000um SSP Prime

Primary flat SEMI (011)+/-1 deg., 30-35mm Secondary flat SEMI 90 +/-5 deg., 16-20mm

1575 100mm P B <100> 0.01-0.02 525um SSP Prime
1720 100mm P B <100> 1-20 200um DSP
1816 100mm P B <100> 5-10 525um SSP Test
 
Item Qty Stock Material Orient. Diam(mm) Thck(μm) Surf. ResΩcm Comment
1077 1 N/Ph [100] 100mm 470um DSP FZ >1,000 Buy as few as one float zone wafer online!
2901 23 P/Boron [100] 100mm 200um DSP FZ >1000  
2648 200 Undoped [100] 100mm 500um SSP FZ >10,000  Prime Grade Lifetime >1,200us, Surface Roughness <5A
2950 200 Undoped [100] 100mm 500um DSP FZ >5000  Undoped Silicon Wafer
2272 300 Intrinsic Si:- [100] 100mm 500um DSP FZ >20,000 Prime Grade
MEMC150SB 150 N/Sb [100] 100mm 625 SSP 0.01-0.02 2 SEMI Flats
6268 14 P/B [110] ±0.5° 4" 500 P/E FZ >10,000 Prime, 2Flats, Empak cst, TTV<5μm
5585 50 P/B [110] ±0.5° 4" 200 P/P FZ 1-2 SEMI Prime, 2Flats, Empak cst
H585 14 P/B [110] ±0.5° 4" 200 P/P FZ 1-2 Prime, 2Flats, Empak cst
I585 9 P/B [110] ±0.5° 4" 200 P/P FZ 1-2 SEMI Prime, 2Flats, Empak cst, Extra 8 scratched wafers in cassette free of charge
H201 45 P/B [100] 4" 220 ±10 P/E FZ >10,000 SEMI Prime, 1Flat, Empak cst
G201 75 P/B [100] 4" 230 ±10 P/E FZ >10,000 SEMI Prime, 1Flat, Empak cst
6269 14 P/B [100-4° towards[110]] ±0.5° 4" 525 P/E FZ >2,000 SEMI Prime, Empak cst, TTV<5μm
N942 67 P/B [100] 4" 420 C/C FZ 850-900 SEMI Prime, 2Flats, Empak cst
4902 119 P/B [100] 4" 250 P/P FZ 1-3 {0.97-1.01} SEMI Prime, 2Flats, Empak cst, MCC Lifetime>1,000μs.
6100 4 P/B [100-6.0° towards[111]] ±0.5° 4" 350 P/P FZ 1-10 SEMI Prime, 2Flats, Empak cst
E791 4 P/B [100] 4" 500 P/P FZ 1-5 SEMI Prime, 2Flats, Empak cst
4219 50 P/B [111] ±0.5° 4" 400 ±15 P/E FZ >20,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm, Lifetime>1,000μs
L173 71 P/B [111] ±0.5° 4" 397 P/E FZ 10,000-15,000 SEMI Prime, Backside ACID Etched, Empak cst
4400 50 n-type Si:P [110] ±0.5° 4" 500 P/P FZ >9,600 SEMI Prime, 2Flats - Primary @ <111>±0.5° - edge unrounded, Secondary @ <111>. 70.5° CCW from Primary, Empak cst, Lifetime>6,000μs
B400 12 n-type Si:P [110] ±0.5° 4" 500 P/P FZ 5,000-15,000 SEMI Prime, 2Flats - Primary @ <111>±0.5° - edge unrounded, Secondary @ <111>. 70.5° CCW from Primary, in Empak cassette Lifetime>6,000μs
N391 21 n-type Si:P [110] ±0.5° 4" 500 P/P FZ 5,000-15,000 SEMI Prime, 2Flats - Primary @ <111>±0.5°, Secondary @ <111>. 70.5° CCW from Primary, in Empak cst, 3 wafers with minor edge chips, Lifetime >6,000μs
5630 4 n-type Si:P [100] 4" 400 ±10 P/P FZ 6,000-8,000 SEMI Prime, 2Flats, Empak cst, TTV<5μm
3861 9 n-type Si:P [100] 4" 200 ±10 P/P FZ >5,000 SEMI TEST (Scratches & defects on back-side), 1Flat, Ox<1E16/cc, C<1E16/cc, Lifetime>1,050μs, Empak cst
H411 2 n-type Si:P [100] 4" 380 P/E FZ 5,000-10,000 SEMI Prime, 1Flat, Lifetime>1,000μs, in Empak cassettes of 2 wafers
J724 7 n-type Si:P [100] 4" 425 C/C FZ >5,000 2Flats (p-type flats on n-type wafers), Empak cst
2355 4 n-type Si:P [100-1.5° towards[110]] ±0.5° 4" 525 P/E FZ >5,000 SEMI Prime, 2Flats, Lifetime>980μs, in Empak
E454 17 n-type Si:P [100] 4" 500 G/G FZ 4,300-6,300 SEMI, 2Flats, Lifetime>1,000μs, Both sides Ground, Empak cst
G050 20 n-type Si:P [100] 4" 525 P/E FZ 4,200-8,000 SEMI TEST (Bad Surface & Chips), Lifetime>1,400μs, 1Flat, in Empak cassettes of 6, 7 & 7 wafers
E180 13 n-type Si:P [100] ±0.2° 4" 380 ±10 P/E FZ >3,500 SEMI TEST (in opened Empak cst), 1 Flat
6241 25 n-type Si:P [100] 4" 400 ±10 P/P FZ 3,100-6,800 SEMI Prime, 2Flats, TTV<5μm
I937 22 n-type Si:P [100] 4" 200 P/P FZ >3,000 SEMI Prime, 1Flat, Empak cst, MCC Lifetime > 1,000μs,
2454 6 n-type Si:P [100] 4" 400 P/E FZ 2,000-6,500 SEMI Prime, 2Flats, Empak cst, Lifetime>1,000μs
5683 20 n-type Si:P [100] 4" 400 P/E FZ 2,000-6,500 SEMI, 2Flats, Empak cst
S5798 15 n-type Si:P [100] 4" 915 ±10 E/E FZ 2,000-3,000 1Flat at [100], Empak cst
E189 48 n-type Si:P [100] 4" 300 L/L FZ 1,100-1,600 SEMI, 1Flat, Empak cst
S6284 1 n-type Si:P [100] ±1° 4" 200 ±10 P/P FZ >1,000 SEMI Prime, 1Flat, TTV<1μm, in Empak cst
E290 9 n-type Si:P [100] 4" 200 ±10 BROKEN FZ 800-1,500 Broken P/E wafers, in various size pieces, Lifetime >1,000μs
D189 25 n-type Si:P [100] 4" 300 L/L FZ 800-1,500 SEMI, 1Flat, Empak cst
H189 25 n-type Si:P [100] 4" 300 L/L FZ 800-1,500 SEMI, 1Flat, Empak cst
5625 15 n-type Si:P [100] 4" 500 P/P FZ 400-1,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm
5543 9 n-type Si:P [100] 4" 500 P/P FZ 198-200 SEMI Prime, 1Flat, Empak cst
6195 18 n-type Si:P [100] 4" 500 P/P FZ 50-70 SEMI Prime, 1Flat, Empak cst
5973 35 n-type Si:P [100] 4" 570 ±10 E/E FZ 50-70 SEMI Prime, 1Flat, Empak cst, lifetime>1,200μs.
F843 38 n-type Si:P [100] 4" 300 P/P FZ 1.2-2.0 SEMI Prime, 2Flats, MCC Lifetime (370-420)μs, Empak cst
G843 5 n-type Si:P [100] 4" 300 P/P FZ 1.2-2.0 SEMI Prime, 2Flats, MCC Lifetime (370-420)μs, Empak cst
6099 13 n-type Si:P [100-6°] ±0.5° 4" 350 P/P FZ 1-10 SEMI Prime, 2Flats, Empak cst
6128 4 n-type Si:P [100] 4" 525 P/P FZ 1-5 SEMI Prime, 2Flats, Empak cst
C976 5 n-type Si:P [100-4° towards[111]] ±0.5° 4" 525 P/E FZ 1-10 {3.2-4.0} SEMI Prime, 2Flats, Lifetime: ~500μs, in Empak cassettes of 5 wafers
C170 19 n-type Si:P [111] ±0.5° 4" 500 P/E FZ 10,000-15,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm
K845 3 n-type Si:P [111] ±0.25° 4" 675 P/E FZ 10,000-20,000 SEMI TEST (Light scratches), 1Flat, Lifetime>1,000μs, Empak cst,
1679 7 n-type Si:P [111] ±0.5° 4" 630 P/G FZ >7,000 SEMI Prime, 1Flat, in Empak, Lifetime>1,000μs, Back-side Fine Ground
B465 14 n-type Si:P [111] ±0.5° 4" 675 P/E FZ >7,000 SEMI, 1Flat, Lifetime>1,600μs, in Empak cassettes of 6 and 8 wafers
D465 13 n-type Si:P [111] ±0.5° 4" 675 P/E FZ >7,000 SEMI, 1Flat, in Empak, Lifetime>1,600μs
E465 1 n-type Si:P [111] ±0.5° 4" 675 P/E FZ >7,000 SEMI TEST (Scratches, in Unsealed Empak cassette), 1Flat, Lifetime>1,600μs
G845 1 n-type Si:P [111] ±0.25° 4" 675 P/E FZ 7,000-10,000 SEMI Prime, 1Flat, in Empak, Lifetime>1,000μs, Light scratches
Q212 2 n-type Si:P [111] ±0.5° 4" 150 ±10 BROKEN FZ 5,000-10,000 Broken P/E wafers, in Empak
B852 25 n-type Si:P [111] ±0.5° 4" 525 P/E FZ >5,000 SEMI Prime, 1Flat, Lifetime>1,000μs, Empak cst
D852 1 n-type Si:P [111-1° towards[110]] ±0.5° 4" 525 P/E FZ >5,000 SEMI TEST (scratches on back-side), 1Flat, Empak cst
D850 8 n-type Si:P [111] ±0.25° 4" 675 P/E FZ 5,000-7,000 SEMI Prime, 1Flat, in Empak, Lifetime>1,000μs
F845 1 n-type Si:P [111] ±0.25° 4" 675 P/E FZ 5,000-7,000 SEMI TEST (light scratches), 1Flat, Lifetime>1,000μs, in Empak
2773 20 n-type Si:P [111] ±0.5° 4" 525 P/P FZ >3,000 SEMI Prime, 2Flats, Lifetime>1,000μs, Empak cst
2777 21 n-type Si:P [111] ±0.5° 4" 525 P/P FZ >3,000 SEMI Prime, 1Flat (32.5mm)
G773 15 n-type Si:P [111] ±0.5° 4" 525 P/P FZ >3,000 SEMI Prime, 2Flats, Lifetime>1,000μs, in Empak cassettes of 5, & 10 wafers
L845 10 n-type Si:P [111] ±0.25° 4" 525 P/E FZ 3,000-5,000 SEMI Prime, 1Flat, in Empak cassettes of 3, 3 & 4 wafers
M845 2 n-type Si:P [111] ±0.25° 4" 525 P/E FZ 3,000-5,000 SEMI TEST (light scratches), 1Flat, Empak cst
I192 5 n-type Si:P [111] ±0.5° 4" 290 ±10 P/P FZ 2,500-3,500 SEMI TEST (Surface defects), 2Flats, Empak cst
F278 12 n-type Si:P [111] ±1° 4" 380 P/E FZ 2,000-3,000 SEMI Prime, 1Flat, TTV<5μm, Lifetime>1,000μs, in Epak cassettes of 6 wafers
D717 9 n-type Si:P [111] ±0.5° 4" 525 P/E FZ 1,500-3,000 SEMI Prime, 1Flat, in Empak, Lifetime>1,100μs
B236 6 n-type Si:P [111] ±0.5° 4" 200 P/P FZ 430-550 SEMI Prime, 1Flat, Empak cst
C236 50 n-type Si:P [111] ±0.5° 4" 525 P/E FZ 430-550 SEMI Prime, 1Flat, Empak cst, TTV<7μm
D236 10 n-type Si:P [111] ±0.5° 4" 525 P/E FZ 430-550 SEMI Prime, 1Flat, Empak cst, TTV<7μm
S5808 17 n-type Si:P [111] ±1° 4" 475 P/E FZ 400-800 Polished but unsealed and dirty. Can be polished and cleaned for additional charge. SEMI, 1Flat, Empak cst
2932 19 n-type Si:P [111] ±0.5° 4" 500 ±13 E/E FZ 6.03-7.37 SEMI, 2Flats
6122 10 n-type Si:P [111] ±0.5° 4" 1,000 P/P FZ 0.011-0.013 Prime, NO Flats, Empak cst
5731 25 n-type Si:P [112-3° towards[11-1]] ±0.5° 4" 762 P/P FZ >100 SEMI Prime, 1Flat, Empak cst
S5767 68 n-type Si:P [112-5° towards[11-1]] ±0.5° 4" 762 P/P FZ ~100 SEMI Prime, 1Flat, Empak cst, TTV<3μm
5739 10 n-type Si:P [112-5° towards[11-1]] ±0.5° 4" 765 P/P FZ ~100 SEMI Prime, 1Flat, Empak cst, TTV<3μm
B987 11 n-type Si:P [112-5° towards[11-1]] ±0.5° 4" 795 E/E FZ >100 SEMI, 1Flat, in Empak, TTV<4μm, Lifetime>2,000μs
K184 12 Intrinsic Si:- [110] 4" 500 P/P FZ >20,000 SEMI Test (Both sides with defects), 2Flats @ [111] - Secondary 70.5° CCW from Primary, Empak cst
6301 100 Intrinsic Si:- [100] 4" 500 P/P FZ >30,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm
6266 50 Intrinsic Si:- [100] 4" 300 P/P FZ >20,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm
5821 25 Intrinsic Si:- [100] 4" 400 P/P FZ >20,000 SEMI Prime, 1Flat, Empak cst
I693 4 Intrinsic Si:- [100] 4" 500 P/P FZ >20,000 SEMI Test, 1Flat, Empak cst, TTV<3μm, Scratches on both sides
S962 5 Intrinsic Si:- [100] 4" 525 P/P FZ >20,000 SEMI Prime, 1Flat, Empak cst, Super Low TTV<0.3μm over entire wafer
6051 50 Intrinsic Si:- [100] 4" 525 P/E FZ >20,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm
F051 69 Intrinsic Si:- [100] 4" 525 P/E FZ >20,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm
K146 2 Intrinsic Si:- [100] 4" 1,000 P/P FZ >20,000 Prime, 1Flat, Empak cst
J146 5 Intrinsic Si:- [100] 4" 1,000 P/P FZ >20,000 Prime, 1Flat, Empak cst
G444 4 Intrinsic Si:- [100] 4" 300 P/E FZ 16,000-20,000 SEMI Prime, 1Flat, Empak cst, Back-side polish is imperfect
L330 1 Intrinsic Si:- [100] 4" 500 P/E FZ 13,000-20,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm, Front-side Prime polish, Back-side light polish
6133 50 Intrinsic Si:- [100] 4" 300 P/P FZ >10,000 SEMI Prime, 1Flat, Empak cst
6061 40 Intrinsic Si:- [100] 4" 500 P/E FZ >10,000 SEMI Prime, 2Flats, Empak cst, TTV<5μm
E775 4 Intrinsic Si:- [100] 4" 615 ±10 C/C FZ >10,000 SEMI Prime, 1Flat, Empak cst
G412 17 Intrinsic Si:- [100] 4" 800 C/C FZ >10,000 SEMI Prime, 1Flat, Empak cst
6297 50 Intrinsic Si:- [100] 4" 1,000 P/P FZ >2,000 SEMI Prime, 1Flat, Empak cst
6137 57 Intrinsic Si:- [111] ±0.5° 4" 500 P/P FZ >25,000 SEMI Prime, 1Flat, Empak cst
3697 46 Intrinsic Si:- [111] ±0.5° 4" 300 P/E FZ 20,000-40,000 SEMI, 1Flat, TTV<5μm, Empak cst
E384 17 Intrinsic Si:- [111] ±0.5° 4" 450 P/P FZ >20,000 SEMI Prime, 1Flat, Empak cst
R698 4 Intrinsic Si:- [111] ±0.5° 4" 500 P/E FZ >20,000 SEMI Prime, 1Flat, Empak cst, Extra 3 free non-prime wafers included with 4 prime wafers
J219 25 Intrinsic Si:- [111] ±0.5° 4" 500 P/P FZ >10,000 SEMI Prime, 1Flat, Empak cst
5542 23 P/B [110] ±0.25° 4" 525 P/E 5-10 SEMI Prime, Primary Flat @ [111]±0.25°, S Flat @ [111]±5° 109.5° CW from PF, Empak cst
6097 75 P/B [110] ±0.25° 4" 525 P/E 5-10 SEMI Prime, 2Flats, Empak cst
F764 50 P/B [110] ±0.5° 4" 380 P/P 1-30 SEMI Prime, Primary Flat @ [111]±0.25°, SFlat @ [111]±5° (109.5° CW from PFlat), Empak cst
D636 9 P/B [110] ±0.5° 4" 750 P/E 1-100 SEMI Prime (back-side polished but not Prime), 2Flats, Empak cst, TTV<5μm, Bow/Warp<10μm
6243 12 P/B [100] 4" 1,000 P/P 200-700 Prime, NO Flats, Empak cst
5584 6 P/B [100] 4" 3,000 P/E 46-50 SEMI Prime, 1Flat, Individual cst, Group of 6 wafers
I808 4 P/B [100] 4" 500 P/P 10-20 SEMI Prime, 2Flats, in single wafer cassettes, can be ordered singly
K483 200 P/B [100] 4" 515 ±10 P/P 10-20 SEMI Prime, 2Flats, Empak cst
5949 24 P/B [100] 4" 750 P/P 10-20 SEMI Prime, 2Flats, Empak cst
6159 275 P/B [100] 4" 1,000 P/P 10-20 SEMI Prime, 2Flats, Empak cst, TTV<5μm
6230 275 P/B [100] 4" 1,000 P/P 10-20 SEMI Prime, 2Flats, Empak cst, TTV<5μm
G511 2 P/B [100] 4" 300 P/P 8-12 SEMI TEST - Front-side badly polished, 2Flats, Empak cst
S5762 9 P/B [100] 4" 610 ±10 E/E 8-12 1Flat at [100], Empak cst
5994 25 P/B [100] 4" 300 P/P 5-10 {6-7} SEMI Prime, 2Flats, Empak cst, TTV<9μm
F994 24 P/B [100] 4" 300 P/P 5-10 {6-7} SEMI Prime, 2Flats, Empak cst, TTV<9μm, Cassettes of 9 + 15 wafers
6274 600 P/B [100] 4" 300 P/P 5-10 SEMI Prime, 2Flats, Empak cst
5727 2 P/B [100] 4" 380 P/E 5-10 SEMI TEST (in Opened cassette), 2Flats, Empak cst
6059 800 P/B [100] 4" 380 P/E 5-10 SEMI Prime, 2Flats, Empak cst
C649 1 P/B [100] 4" 380 P/E 5-10 SEMI TEST (with bad surface), 1Flat, Empak cst
D819 1 P/B [100] 4" 380 P/E 5-10 SEMI Prime, 1Flat, hard cst, Back-side slightly darker than normal
E136 24 P/B [100] 4" 380 P/E 5-10 SEMI Test, 2Flats, Empak cst, Dirty wafers, can be cleaned for extra fee
C815 2 P/B [100] 4" 380 BROKEN 5-10 Broken P/E Wafers, 1Flat, in Empak
D259 2 P/B [100] 4" 380 BROKEN 5-10 Broken P/E Wafers, 2Flats, in Empak
D649 1 P/B [100] 4" 380 BROKEN 5-10 Broken (largest piece is ~30%), 1Flat, in Empak
6223 375 P/B [100] 4" 525 P/E 5-10 SEMI Prime, 2Flats, Empak cst, TTV<5μm
B247 5 P/B [100] 4" 525 P/E 5-10 SEMI, 2Flats, Empak cst
E326 21 P/B [100] 4" 525 P/E 5-10 SEMI Prime, 1Flat, Empak cst, TTV<4μm, Bow<15μm, Warp<30μm, Cassettes of 4, 6 and 11 wafers
H452 24 P/B [100] 4" 525 P/E 5-10 SEMI Test, Dirty and scratched, 2Flats, Empak cst
6019 175 P/B [100] 4" 1,000 P/E 5-10 SEMI Prime, 1Flat, Empak cst, TTV<5μm
6313 24 P/B [100] 4" 525 P/E 4.1-4.5 Prime, NO Flats, Empak cst
5644 23 P/B [100] 4" 250 ±10 P/P 1-5 {4.1-4.7} SEMI Prime, 2Flats, Empak cst, TTV<5μm
6273 10 P/B [100-4.0°] ±0.5° 4" 275 P/E 1-30 SEMI Prime, 1Flat, Empak cst, TTV<5μm
5997 9 P/B [100] 4" 300 P/P 1-10 SEMI Prime, 2Flats, Empak cst
E485 3 P/B [100-4° towards[110]] ±0.5° 4" 300 P/E 1-10 SEMI Test, 2Flats, Empak cst, Wafers with pits
M334 3 P/B [100] 4" 381 ±5 P/P 1-30 SEMI Prime, 2Flats, TTV<5μm, Bow<8μm, Warp<20μm, Empak cst
G189 10 P/B [100] 4" 475 P/E 1-10 SEMI Prime, 2Flats, Empak cst, Epi edges for 150μm epi growth
5440 25 P/B [100] 4" 500 P/P 1-50 SEMI Prime, 2Flats, in Empak cst, Carbon content (0.2-0.9)E16/cc per ASTM F1319, Oxygen content (9.4-8.8)E17/cc per ASTM F1188.
B742 25 P/B [100] 4" 500 P/P 1-50 SEMI Prime, 2Flats, in Empak cst, Carbon content ~1.0ppma per ASTM F1319.
C742 25 P/B [100] 4" 500 P/P 1-50 SEMI Prime, 2Flats, in Empak cst, Carbon content ~0.2ppma per ASTM F1319.
J440 20 P/B [100] 4" 500 P/P 1-50 SEMI Prime, 2Flats, in Empak cst, Carbon content (1.3-2.2)E16/cc per ASTM F1319, Oxygen content (7.9-7.7)E17/cc per ASTM F1188.
K440 7 P/B [100] 4" 500 P/P 1-50 SEMI Prime, 2Flats, in Empak cst, Carbon content (0.9-1.1)E16/cc per ASTM F1319, Oxygen content (8.4-8.0)E17/cc per ASTM F1188.
L440 50 P/B [100] 4" 500 P/P 1-50 SEMI Prime, 2Flats, in Empak cst, Carbon content (9.8-14.1)E16/cc per ASTM F1319, Oxygen content 6.8E17/cc per ASTM F1188.
6197 500 P/B [100] 4" 525 P/P 1-10 SEMI Prime, 2Flats, Empak cst, TTV<5μm
F307 12 P/B [100] 4" 525 P/P 1-10 SEMI Test, 2Flats, Empak cst, Unsealed, dirt and defects on wafers
G672 24 P/B [100] 4" 525 P/P 1-10 SEMI Test, 2Flats, Empak cst, Dirty wafers, can be recleaned for extra fee
S216 100 P/B [100] 4" 525 P/P 1-5 SEMI Test, 2Flats, Empak cst, Wafers with particles and scratches
6200 15 P/B [100-4° towards[110]] ±0.5° 4" 525 P/E 1-20 SEMI Prime, 2Flats, Empak cst, TTV<5μm
6242 10 P/B [100] 4" 525 P/E 1-5 SEMI Prime, 1Flat, Empak cst
4959 25 P/B [100] 4" 525 NP/PN 1-10 SEMI Prime, 2Flats, Empak cst, with 150nm of LPCVD Stoichiometric Silicon Nitride on bith sides
D959 25 P/B [100] 4" 525 NOxP/POxN 1-10 SEMI Prime, 2Flats, Both sides with 150nm of LPCVD Si3N4 over 200nm of SiO2 over Si , Empak cst
S5841 26 P/B [100-0.5°] 4" 590 ±10 E/E 1-3 SEMI Prime, 2Flats
4829 25 P/B [100] 4" 2,100 P/E 1-100 SEMI Prime, 1Flat, Individual cst, Groups of 5 wafers
3996 7 P/B [100] 4" 3,000 P/E 1-100 SEMI Prime, 1Flat, Individual cst, Groups of 7 and 10 wafers
6058 10 P/B [100] 4" 3,000 P/E 1-30 SEMI, 2Flats, Individual cst
B594 10 P/B [100] 4" 3,175 P/P 1-10 SEMI Prime, 2Flats, Individual cst, TTV<8μm
K588 2 P/B [100] 4" 3,175 P/P 1-10 SEMI Prime, 2Flats, Individual cst, TTV<8μm
2586 9 P/B [100] 4" 3,200 P/E 1-100 SEMI Prime, 1Flat, Individual cst, Sealed as group of 9 wafers
6015 4 P/B [100] 4" 4,000 P/P 1-100 SEMI Prime, 2Flats, Individual cst
5737 4 P/B [100] 4" 890 ±15 P/P 0.5-10.0 SEMI TEST (Scratches), 1Flat, TTV<8μm, Empak cst
5990 100 P/B [100] 4" 525 P/E 0.1-0.2 SEMI Prime, 2Flats, Empak cst
2612 5 P/B [100] 4" 350 P/E 0.095-0.130 SEMI Prime, 2Flats, Empak cst
3031 5 P/B [100-6° towards[110]] ±0.5° 4" 525 P/E 0.015-0.020 SEMI Prime, 2Flats, in Empak cassettes of 5 & 10 wafers
5833 450 P/B [100] 4" 300 E/E 0.01-0.02 SEMI Prime, 2Flats, Empak cst, TTV<4μm
G780 141 P/B [100] 4" 300 E/E 0.01-0.02 SEMI Prime, 2Flats, Empak cst, TTV<4μm
5771 25 P/B [100-4°] ±0.5° 4" 380 ±10 P/P 0.01-0.02 SEMI Prime, Empak cst, TTV<2μm
6140 90 P/B [100] 4" 525 P/E 0.01-0.02 SEMI, 2Flats, Empak cst, TTV<5μm
T155 10 P/B [100] 4" 525 P/POx 0.008-0.020 SEMI Prime, 2Flats, Empak cst
I135 44 P/B [100] 4" 500 P/P 0.001-0.005 SEMI Prime, 2Flats, Empak cst, Wafers with striation marks
J135 25 P/B [100] 4" 500 P/P 0.001-0.005 SEMI Test, 2Flats, Empak cst, Wafers with striation marks, Unsealed and previously opened
6073 300 P/B [100] 4" 525 P/P 0.001-0.005 SEMI Prime, 1Flat, Empak cst, TTV<5μm, Bow<15μm, Warp<30μm
6209 500 P/B [100] 4" 525 P/E 0.001-0.005 SEMI Prime, 2Flats, Empak cst
K173 1 P/B [100] 4" 525 BROKEN 0.001-0.005 Broken wafer (shattered into many pieces), 1Flat
5420 85 P/B [100] 4" 800 C/C 0.001-0.005 SEMI, 2Flats, Empak cst, With striation marks
6214 5 P/B [100] 4" 2,000 P/P 0.001-0.005 SEMI Prime, 2Flats, Individual cst Sealed in group of 5 wafers
S5774 1 P/B [100] 4" ? P/P ? SEMI Test, 2Flats, Empak cst
D939 25 P/B [100] 4" 375 P/E <0.0015 {0.00091-0.00099} SEMI Prime, 1Flat, Empak cst, TTV<3μm
I374 15 P/B [111] 4" 350 P/E 2-3 Prime, NO Flats, Empak cst
L620 20 P/B [111] 4" 1,000 P/P 1-10 SEMI Prime, 1Flat, Empak cst, Cassettes of 10 and 10 wafers
M620 7 P/B [111] 4" 1,000 P/P 1-10 SEMI Prime, 1Flat, Empak cst
D677 15 P/B [111] ±0.5° 4" 1,000 P/E 1-10 SEMI Prime, 1Flat, in hard cassettes of 7 & 8 wafers
D891 3 P/B [111] ±0.5° 4" 525 P/P 0.2-1.0 SEMI Prime, 1Flat, Empak cst
E891 20 P/B [111] ±0.5° 4" 525 P/P 0.2-1.0 SEMI Prime, 1Flat, in Empak cassettes of 6, 7 & 7 wafers
4279 225 P/B [111-4°] ±0.5° 4" 525 P/E 0.01-0.02 SEMI Prime, 1Flat, Empak cst
C228 25 P/B [111-4°] ±0.5° 4" 525 ±15 P/EOx 0.005-0.015 {0.0086-0.0135} SEMI Prime, 1Flat, Empak cst, TTV<5μm, 5,000A LTO on back-side
1223 9 P/B [111-3°] ±0.5° 4" 525 P/E 0.002-0.016 SEMI Prime, 1Flat, in Empak cassettes of 4, 5 & 5 wafers
D858 20 P/B [111-3°] 4" 525 P/E 0.002-0.004 SEMI Prime, 1Flat, Empak cst
4949 75 P/B [111] ±0.5° 4" 1,000 P/E <0.01 SEMI Prime, 1Flat, Empak cst
L403 20 P/B [112] ±0.5° 4" 500 P/P 1-100 SEMI Prime, 1Flat at <1,1,-1>, Empak cst
3623 18 n-type Si:P [110] ±0.5° 4" 525 P/P 20-80 SEMI Prime, 2Flats @ [111] - Secondary 70.5° CW from Primary, Empak cst
G538 14 n-type Si:P [110] ±0.5° 4" 500 P/P 3-10 SEMI Prime, TTV<10μm, Bow/ Warp<30μm, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary, in Empak cassettes of 7 wafers
4891 25 n-type Si:P [110] ±0.3° 4" 525 P/P 3-10 SEMI Prime, TTV<10µm, Bow/ Warp<30µm, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary
6021 200 n-type Si:P [110] ±0.3° 4" 525 P/P 3-10 Prime, 2Flats, Empak cst
H725 13 n-type Si:P [110] ±0.3° 4" 525 P/P 3-10 SEMI Prime, TTV<10µm, Bow/ Warp<30µm, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary, in Empak cassettes of 6 & 7 wafers
5549 25 n-type Si:P [110] ±0.5° 4" 525 P/E 3-9 SEMI Prime, Primary Flat @ <111>±1°, S Flat @ <111> 70.5° CW from PF, TTV<10μm Bow/Warp<30μm, Empak cst
6014 325 n-type Si:P [110] ±0.5° 4" 525 P/E 3-9 SEMI Prime, 2Flats, Empak cst, TTV<5μm
J615 8 n-type Si:P [110] ±0.2° 4" 525 P/E 3-10 SEMI Prime, Primary Flat @ <111>±0.2°, SF @ <111> 70.5° CW from PF, TTV<4μm Bow<15μm, Warp<30μm, Empak cst
D898 22 n-type Si:Sb [110] ±0.5° 4" 525 P/P 0.01-0.02 {0.0176-0.0180} Prime, 2Flats @ [111] - Secondary 70.5° CW from Primary, Empak cst
4024 21 n-type Si:As [110] ±0.5° 4" 275 P/P 0.001-0.005 SEMI TEST (Haze and scratches, TTV<15μm), Primary Flat at [111]±0.5°,
Secondary at 70.5°±5° CW from Primary, Empak cst
4293 25 n-type Si:As [110] ±0.5° 4" 275 ±10 P/P 0.001-0.005 SEMI Prime, 2Flats @ [111] - Secondary 70.5° CW from Primary, Empak cst, TTV<5μm
E024 13 n-type Si:As [110] ±0.5° 4" 275 ±10 P/P 0.001-0.005 SEMI Prime, 2Flats at [111] 70.5° apart, TTV<5μm, Empak cst
I220 44 n-type Si:As [110] ±0.5° 4" 400 E/E 0.001-0.005 SEMI, 2Flats @ [111] - Secondary 70.5° CW from Primary, Empak cst
S5002 8 n-type Si:P [100] 4" 310 ±10 P/P 20-30 SEMI Test, 2Flats, Empak cst, Unsealed, Polished but dirty. Can be made prime for additional fee 
5892 21 n-type Si:P [100] 4" 350 P/P 20-23 SEMI Prime, 14 wafes with 2 flats, 7 with 1 flat, Empak cst
G827 14 n-type Si:P [100] 4" 525 P/E 10-30 SEMI, 2Flats, in Empak cassettes of 7 & 7 wafers
5924 5 n-type Si:P [100] 4" 5,800 P/E 10-100 SEMI Prime, 2Flats, Individual cst
D389 5 n-type Si:P [100] 4" 5,800 P/E 10-100 SEMI Prime, 2Flats, Individual cst
5337 11 n-type Si:P [100-4° towards[111]] 4" 525 P/E 9-11 SEMI Prime, 2Flats, Empak cst
5849 23 n-type Si:P [100] 4" 525 P/E 7-11 SEMI Prime, 2Flats, Empak cst
P849 18 n-type Si:P [100] 4" 525 P/E 7-11 SEMI Prime, 2Flats, Empak cst
5171 25 n-type Si:P [100] 4" 224 P/E 5-10 SEMI Flats (two), Empak cst, Cassette of 12 + 13 wafers
D033 23 n-type Si:P [100] 4" 224 BROKEN 5-10 SEMI Test, 2Flats, Empak cst
L758 3 n-type Si:P [100] 4" 500 P/P 4-6 SEMI Prime, 2Flats, Empak cst
D830 13 n-type Si:P [100] 4" 350 ±10 P/P 3-5 SEMI Prime, 2Flats, in Empak cassettes of 5 & 8 wafers
E830 8 n-type Si:P [100] 4" 350 P/P 3-5 SEMI Test, 2Flats, Empak cst, Haze, pits, scratches
B752 38 n-type Si:P [100] 4" 450 C/C 3-5 SEMI Prime, 2Flats, Empak cst
6032 275 n-type Si:P [100] 4" 525 P/E 3-9 SEMI Prime, 2Flats, Empak cst, TTV<5μm
C925 14 n-type Si:P [100] 4" 500 ±10 P/P 2-5 SEMI TEST (wafers have spots resembling water splashes, which do not come off), 2Flats, in hard cassettes of 4, 5 & 5 wafers
D123 19 n-type Si:P [100] 4" 500 ±10 P/P 2-5 SEMI Prime, 2Flats, in Empak cassettes of 6, 6 & 7 wafers
6224 275 n-type Si:P [100] 4" 525 ±10 P/P 2-6 SEMI Prime, 1Flat, Empak cst
S5920 2 n-type Si:P [100] 4" 250 ±5 P/P 1-100 SEMI Prime, TTV<3μm, Empak cst
5322 25 n-type Si:P [100] 4" 280 ±2 P/P 1-10 SEMI Prime, 1Flat, Empak cst, TTV<2μm
O173 100 n-type Si:P [100] 4" 280 P/P 1-5 SEMI Prime, 2Flats, Empak cst
5772 5 n-type Si:P [100] ±0.2° 4" 400 ±10 P/P 1-3 SEMI Prime, 1Flat, Empak cst, TTV<5μm
6001 250 n-type Si:P [100] 4" 400 ±10 P/P 1-10 SEMI Prime, 2Flats, Empak cst, TTV<5μm
F209 7 n-type Si:P [100] 4" 400 ±5 P/P 1-10 SEMI Prime, 1Flat, Empak cst, TTV<1μm, Bow<20μm, Warp<20μm
J762 25 n-type Si:P [100] ±1° 4" 400 ±10 P/P 1-10 SEMI Test, 2Flats, Empak cst, TTV<5μm
5903 6 n-type Si:P [100] 4" 400 P/E 1-6 SEMI Prime, 2Flats, Empak cst
S5763 11 n-type Si:P [100] ±1° 4" 465 ±10 E/E 1-3 SEMI, 1Flat, Empak cst
6246 11 n-type Si:P [100] 4" 500 ±10 P/P 1-100 SEMI, 2Flats, Empak cst
5841 23 n-type Si:P [100] 4" 525 P/E 0.3-0.5 SEMI Prime, 2Flats, Empak cst, TTV<5μm
6082 75 n-type Si:P [100] 4" 525 P/E 0.3-0.5 SEMI Prime, 2Flats, Empak cst
6158 200 n-type Si:P [100] 4" 525 P/E 0.3-0.5 SEMI Prime, 2Flats, Empak cst
P243 24 n-type Si:P [100] 4" 300 P/E 0.29-0.31 SEMI Prime, 2Flats, Empak cst
6134 12 n-type Si:P [100] 4" 200 P/P 0.10-0.15 SEMI Test, 2Flats, Empak cst, Not sealed both sides scratched
E134 40 n-type Si:P [100] 4" 200 P/P 0.10-0.15 SEMI Test, 2Flats, Empak cst, Both sides with scratches
F134 25 n-type Si:P [100] 4" 200 P/E 0.10-0.15 SEMI Prime, 2Flats, Empak cst, Front-side Prime, Back-side Test grade polish
E031 25 n-type Si:Sb [100-6° towards[110]] ±0.5° 4" 525 P/E 0.015-0.020 SEMI Prime, 2Flats, Empak cst
5899 10 n-type Si:Sb [100] 4" 305 ±3 P/P 0.010-0.025 SEMI Prime, 2Flats, Empak cst, TTV<1μm
6138 150 n-type Si:Sb [100] 4" 525 P/E 0.01-0.02 SEMI Prime, 2Flats, Empak cst
F138 75 n-type Si:Sb [100] 4" 525 P/E 0.01-0.02 SEMI Prime, 2Flats, Empak cst
U671 15 n-type Si:As [100] 4" 545 E/E 0.002-0.004 SEMI, 1Flat, Empak cst
F562 3 n-type Si:As [100] 4" 525 PlyAP/E 0.001-0.005 With layer of Al2O3, ~0.1μm or ~0.05μm thick, Wafers with a matrix of Polycrystalline Silicon dots, Empak cst,
[More Info]
5677 68 n-type Si:As [100] 4" 525 P/P 0.001-0.005 SEMI Prime, 1Flat, Empak cst
F219 1 n-type Si:As [100] 4" 525 P/E 0.001-0.005 SEMI Test (Chipped edge), 2Flats, Empak cst
F734 275 n-type Si:As [100] 4" 525 P/E 0.001-0.005 SEMI Prime, 2Flats, Empak cst
J220 2 n-type Si:As [100] 4" 525 P/E 0.001-0.005 SEMI Prime, 2Flats, Empak cst, TTV<4μm, Bow<10μm, Warp<25μm
E720 44 n-type Si:As [100] 4" 550 ±10 P/P 0.001-0.005 SEMI Prime, 2Flats, Empak cst
4975 13 n-type Si:Sb [211] ±0.5° 4" 1,500 ±15 P/P 0.01-0.02 SEMI Prime, 1Flat, Empak cst, TTV<1μm
F975 4 n-type Si:Sb [211] ±0.5° 4" 1,600 C/C 0.01-0.02 SEMI Test, 1Flat, Empak cst, Wafers can be polished for additional fee
E395 21 n-type Si:P [111] 4" 1,200 P/P 35-85 SEMI Prime, 2Flats, Empak cst
G925 4 n-type Si:P [111] ±0.5° 4" 1,500 P/E >20 {24-29} SEMI Prime, 2Flats, TTV<5μm, in Empak cassettes of 2 wafers
J329 21 n-type Si:P [111] ±0.5° 4" 250 P/E 18-25 SEMI Prime, 2Flats, Empak cst
4387 75 n-type Si:P [111] ±0.5° 4" 500 P/P 11-15 SEMI Prime, 2Flats, Empak cst, Both-sides Epi Ready polished
5259 50 n-type Si:P [111] ±0.5° 4" 525 P/E 1-5 SEMI Prime, 2Flats, Empak cst
5637 11 n-type Si:P [111] ±0.5° 4" 750 P/P 1-100 SEMI Prime, 2Flats, Empak cst, TTV<5μm
E677 10 n-type Si:P [111] ±0.5° 4" 1,000 P/E 1-10 SEMI Prime, 2Flats, in Empak cassettes of 3, 3 & 4 wafers.
F677 7 n-type Si:P [111] ±0.5° 4" 1,000 P/E 1-10 SEMI Prime, 2Flats, Empak cst
E601 5 n-type Si:P [111] ±0.5° 4" 10,000 P/E 1-100 {8.3-9.9} Prime, NO Flats, Individual cst, groups of 5 wafers
S5810 3 n-type Si:P [111] ±1.0° 4" 525 P/E 0.3-50.0 SEMI Prime, 2Flats, Empak cst
S5840 47 n-type Si:P [111] ±1.0° 4" 565 ±10 E/E 0.3-50.0 SEMI Prime, Empak cst
4420 10 n-type Si:Sb [111] 4" 525 P/E 0.016-0.020 SEMI Prime, 2Flats, Empak cst
5546 25 n-type Si:Sb [111] 4" 525 P/E 0.016-0.020 SEMI Prime, 2Flats, Empak cst
9544 125 n-type Si:Sb [111-4°] ±0.5° 4" 420 P/EOx 0.008-0.018 {0.0138-0.0151} SEMI Prime, 2Flats, Empak cst, Epi edges, TTV<2μm, HBSD+LTO seal
B786 19 n-type Si:Sb [111-4.0°] ±0.5° 4" 475 ±15 P/E 0.005-0.020 {0.0113-0.0156} SEMI Prime, 2Flats, Empak cst
N758 20 n-type Si:As [111] 4" 450 P/E 0.004-0.005 SEMI Prime, 1Flat, Empak cst
5890 25 n-type Si:As [111] ±0.5° 4" 750 P/E 0.004-0.006 SEMI Prime, 2Flats, Empak cst
5740 50 n-type Si:As [111-4°] ±0.5° 4" 300 P/E 0.001-0.005 SEMI Prime, 2Flats, Empak cst, Back Surface: Sand blasted
5741 25 n-type Si:As [111-4°] ±0.5° 4" 325 P/E 0.001-0.005 SEMI Prime, 2Flats, Empak cst, Back Surface: Sand blasted with LTO seal
D741 14 n-type Si:As [111-4°] ±0.5° 4" 300 P/E 0.001-0.005 SEMI Prime, 2Flats, Back-side Sand-blasted with LTO seal, in Empak cassettes of 7 wafers
9239 150 n-type Si:As [111-2°] ±0.5° 4" 400 P/EOx 0.001-0.004 {0.0018-0.0036} SEMI Prime, 1Flat, Epi edges, 0.5μm LTO, Empak cst
6219 300 n-type Si:As [111-4°] 4" 525 P/E 0.001-0.005 SEMI Prime, 2Flats, Empak cst
J656 15 n-type Si:As [111-4°] 4" 525 P/E 0.001-0.005 SEMI Prime, 2Flats, Empak cst
3556 137 n-type Si:As [111] ±0.5° 4" 1,000 P/E 0.001-0.005 {0.0031-0.0040} SEMI Prime, 2Flats, Empak cst, TTV<4μm, Bow<10μm, Warp<20μm
X7299 125 n-type Si:As [111-4°] 4" ? L/L ? SEMI TEST (in Opened Empak cst), 2Flats (2nd @ 45°)
H151 2 n-type Si:P [112] ±0.5° 4" 500 P/P 11-15 SEMI Prime, 1Flat, in Empak cassettes of 2 wafers
S5775 3 Si ? 4" ? P/P ? SEMI TEST (Unsealed), Empak cst
5784 4 Si [110] ±0.5° 4" 525 C/C ? Empak cst
5029 17 P/B [100] 4" 380 OxP/EOx 5-10 SEMI Prime, 1Flat, Thermal Oxide 2.2±0.2μm thick
S5776 25 Si ? 4" ? P/P ? SEMI TEST (Unsealed), Empak cst
F837 21 n-type Si:P [100] 4" 500 P/P FZ 198-200 SEMI Prime, 2Flats, Empak cst
H412 15 Intrinsic Si:- [100] 4" 650 P/P FZ >10,000 SEMI Prime, with LM, 1Flat, Empak cst, TTV<2μm
17F3 13 P/B [110] ±0.5° 4" 525 P/E 4-6 SEMI Prime, 2 Flats at [111], Secondary 70.5° CW from PF, Empak cst
13S2 15 P/B [110] 4" 525 P/E 2-10 PF<111> SF 109.5°
16L 4 P/B [100] 4" 300 P/E 800-5,400 SEMI Prime, 1Flat, Empak cst
15W2 25 P/B [100] 4" 500 P/P 10-20 SEMI Prime, 2Flats, Empak cst
21F 10 P/B [100] 4" 3,000 P/E/P 10-15 SEMI Prime, 1Flat, Individual cst
16P1 7 P/B [100-6°] 4" 250 P/E 8-12 SEMI Prime, 2Flats, Empak cst
16A2 9 P/B [100-2°] 4" 300 P/E 6-7 SEMI Prime, 2Flats, Empak cst
15U2 25 P/B [100] 4" 1,000 P/E 6-7 SEMI Prime, 2Flats, Empak cst
21Q1 25 P/B [100] 4" 1,600 P/P ~6 SEMI Prime, 1Flat, Individual cst
16F 13 P/B [100-6°] 4" 525 P/E 4-6 SEMI Prime, 2Flats, Empak cst
1.60E+04 22 P/B [100] 4" 200 P/P 1-20 SEMI Prime, 1Flat, Empak cst
15V2 25 P/B [100] 4" 250 P/E 1-10 SEMI Prime, 2Flats, Empak cst
16R3 25 P/B [100] 4" 300 P/E/P 1-10 SEMI Prime, 2Flats, Empak cst
16H2 8 P/B [100-10°] 4" 300 P/E 1-10 SEMI Prime, 2Flats, Empak cst
16C1 10 P/B [100] 4" 500 P/P 1-10 SEMI Prime, 2Flats, Empak cst
16B2 13 P/B [100-6°] 4" 525 P/E 1-100 SEMI Prime, 1Flat, Empak cst
21A1 25 P/B [100] 4" 1,200 P/P 1-15 SEMI Prime, 2Flats, Empak cst
17U1 50 P/B [100] 4" 800 P/EP 0.01-0.02 SEMI Prime, 2Flats, Empak cst
20W2 27 P/B [100] 4" 3,100 P/P CZ 0.006-0.009 SEMI Prime, 2Flats, Individual cst
17V1 10 P/B [100-6°] 4" 525 P/E 0.0042-0.0047 SEMI Prime, 2Flats, Empak cst
J772 25 P/B [100] 4" 150 ±15 P/P 0.001-0.005 SEMI Prime, 2Flats, Empak cst, TTV<2μm
13R1 25 P/B [111-3°] 4" 300 P/E 3-4 SEMI Prime, 2Flats, Empak cst
13V1 15 P/B [111-4°] 4" 525 P/E 1.5-6.0 SEMI Prime, 1Flat, Empak cst
15F2 25 P/B [111-3°] 4" 400 P/E 0.015-0.018 SEMI Prime, 1Flat, Empak cst
14T1 16 P/B [111] 4" 525 P/E 0.005-0.006 SEMI Prime, 1Flat, Empak cst
15B1 20 P/B [111-1.5°] 4" 525 P/E 0.002-0.004 SEMI Prime, 1Flat, Empak cst
15D1 15 P/B [111] 4" 300 P/E 0.001-0.005 SEMI Prime, 1Flat, Empak cst
15I1 21 n-type Si:P [110] 4" 1,000 P/E 12-15 ??
16Y2 15 n-type Si:P [100] 4" 200 P/P 49-57 SEMI Prime, 2Flats, Empak cst
16Z6 25 n-type Si:P [100] 4" 400 P/E 32-70 SEMI Prime, 2Flats, Empak cst
18S1 25 n-type Si:P [100] 4" 400 P/P 17-19 Prime, NO Flats, Empak cst
16V4 25 n-type Si:P [100] 4" 700 P/E 14-18 Prime, NO Flats, Empak cst
18U2 25 n-type Si:P [100] 4" 250 P/E 11-13 SEMI Prime, 2Flats, Empak cst
18V1 20 n-type Si:P [100] 4" 400 P/P 10-18 SEMI Prime, 2Flats, Empak cst
16T1 50 n-type Si:P [100] 4" 525 P/E 5-10 SEMI Prime, 1Flat, Empak cst
16X3 24 n-type Si:P [100] 4" 259 P/P 3-5 SEMI Prime, 2Flats, Empak cst
18Q1 11 n-type Si:P [100-4°] 4" 525 P/E/P 1-10 SEMI Prime, 2Flats, Empak cst
16U2 14 n-type Si:P [100-2°] 4" 525 P/E >1 SEMI Prime, 2Flats, Empak cst
17C2 6 n-type Si:P [100] 4" 1,000 P/P 1-20 SEMI Prime, 2Flats, Empak cst
21S3 7 n-type Si:P [100] 4" 2,500 P/P 1-100 SEMI Prime, 2Flats, Individual cst
18L1 4 n-type Si:Sb [100] 4" 450 P/E ~0.03 SEMI Prime, 1Flat, Empak cst
18H1 6 n-type Si:Sb [100] 4" 400 P/E ~0.02 SEMI Prime, 2Flats, Empak cst
18K1 18 n-type Si:Sb [100] 4" 600 P/E 0.01-0.03 Strange Flats
21V 8 n-type Si:Sb [100-4°] 4" 1,500 P/E/P 0.005-0.030 SEMI Prime, 2Flats, Empak cst
20X1 17 n-type Si:Sb [100] 4" 1,500 P/E/P 0.001-0.030 SEMI Prime, 2Flats, Empak cst
22K1 15 n-type Si:P [111] 4" 1,500 P/E >20 SEMI Prime, 2Flats, Empak cst
13U1 75 n-type Si:P [111] 4" 250 P/E 18-25 SEMI Prime, 2Flats, Empak cst
14C1 75 n-type Si:P [111] 4" 250 P/E 18-25 SEMI Prime, 2Flats, Empak cst
13W3 12 n-type Si:P [111] 4" 280 P/E 2-5 SEMI Prime, 2Flats, Empak cst
22J1 6 n-type Si:P [111] 4" 2,500 P/P 2.0-2.5 SEMI Prime, 2Flats, Individual cst
14A1 200 n-type Si:P [111] 4" 280 P/E 1-2 SEMI Prime, 2Flats, Empak cst
13M1 12 n-type Si:P [111-4°] 4" 525 P/E 1-15 SEMI Prime, 1Flat, Empak cst
13P3 6 n-type Si:P [111-1.5°] 4" 525 P/E 1-2 SEMI Prime, 2Flats, Empak cst
13J4 50 n-type Si:P [111] 4" 1,000 P/E 1-10 SEMI Prime, 2Flats, Empak cst
13Q4 3 n-type Si:P [111] 4" 1,000 P/E 1-10 SEMI Prime, 2Flats, Empak cst
14M1 75 n-type Si:Sb [111-4°] 4" 450 P/E 0.025-0.045 SEMI Prime, 2Flats, Empak cst
14W1 10 n-type Si:Sb [111-2.5°] 4" 625 P/E 0.021-0.023 SEMI Prime, 2Flats, Empak cst
1.40E+02 25 n-type Si:Sb [111] 4" 525 P/E 0.016-0.020 SEMI Prime, 2Flats, Empak cst
14G1 125 n-type Si:Sb [111-4°] 4" 525 P/E 0.010-0.020 SEMI Prime, 2Flats, Empak cst
14I2 25 n-type Si:Sb [111-2°] 4" 380 P/E 0.008-0.018 SEMI Prime, 1Flat, Empak cst
14F2 600 n-type Si:Sb [111-3°] 4" 400 P/E 0.008-0.018 SEMI Prime, 1Flat, Empak cst
15A1 50 n-type Si:Sb [111-3°] 4" 400 P/E 0.005-0.018 SEMI Prime, 2Flats, Empak cst
15G2 25 n-type Si:As [111] 4" 450 P/E 0.004-0.005 SEMI Prime, 1Flat, Empak cst
14N1 50 n-type Si:As [111-3°] 4" 400 P/E 0.001-0.005 SEMI Prime, 1Flat, Empak cst
14D4 50 n-type Si:As [111-4°] 4" 525 P/E 0.001-0.005 SEMI Prime, 2Flats, Empak cst
14K1 10 n-type Si:As [111-4°] 4" 525 P/E 0.001-0.005 SEMI Prime, 1Flat, Empak cst
14P1 25 n-type Si:As [111-2.5°] 4" 525 P/E 0.001-0.005 SEMI Prime, 1Flat, Empak cst
14R1 25 n-type Si:As [111-3°] 4" 525 P/E 0.001-0.005 SEMI Prime, 2Flats, Empak cst
17H1 3 Intrinsic Si:- [100] 4" 525 P/E 400-1,000 SEMI Prime, 1Flat, Empak cst