Nitride on Silicon Wafers Stoichiometric, Low & Super Low Stress

Buy Your Nitride Silicon Wafers Online and Save!

Stochiometric, low stress and super low stress nitride can be purchased online in quantities from just one wafer to thousands.

We have all diameters, from 25.4mm to 300mm avaialble. Below are just some of what we have in stock.

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Silicon Nitride Wafers LPCVD - Buy Online

Ask for the Nitride wafers that we have in stock.

Stoichiometric LPCVD Nitride - Our Standard nitride film works great as hard mask for KOH etching and can be used as a tool for defining active regions during field oxidation.

Our Low Stress Nitride retains all of the same benefits associated with our standard nitride but can also be used for Membranes, Cantilever Beams and other mechanical structures associated with MEMS devices.

Our Super low stress nitride has been developed for applications that require extremely low film stress. Film Stress can also be customized to meet your unique specifications.

Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance. Silicon Nitride is produced in three main types; Reaction Bonded Silicon Nitride (RBSN), Hot Pressed Silicon Nitride (HPSN) and Sintered Silicon Nitride (SSN). We have Silicon Nitride 2" - 12" all specs and quanities.

Fill out the form for an immediate quote.

Silicon Nitride Wafers LPCVD

Ask for the Nitride wafers that we have in stock.

Stoichiometric LPCVD Nitride - Our Standard nitride film works great as hard mask for KOH etching and can be used as a tool for defining active regions during field oxidation.

Our Low Stress Nitride retains all of the same benefits associated with our standard nitride but can also be used for Membranes, Cantilever Beams and other mechanical structures associated with MEMS devices.

Our Super low stress nitride has been developed for applications that require extremely low film stress. Film Stress can also be customized to meet your unique specifications.

Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance. Silicon Nitride is produced in three main types; Reaction Bonded Silicon Nitride (RBSN), Hot Pressed Silicon Nitride (HPSN) and Sintered Silicon Nitride (SSN). We have Silicon Nitride 2" - 12" all specs and quanities.

Fill out the form for an immediate quote.

Silicon Nitride Wafers PECVD

Our PECVD Nitride is a single sided film that has been optimized for wafers requiring minimal thermal processing. Because PECVD Nitride is deposited at low temperatures, it offers greater flexibility and can be deposited over any of our other thin films.

Wafers Sizes up to 300mm

Capable of handling custom substrate shapes, sizes and materials

Thickness up to 2µm

Tolerance: +/- 7% or better

Film Stress: 600MPa Tensile

Refractive Index: 2.00

Temperature: 350C

Our PECVD OxyNitride is a single sided film that has been optimized for wafers requiring minimal thermal processing. Because PECVD OxyNitride is deposited at low temperatures, it offers greater flexibility and can be deposited over any of our other thin films.

Nitride Silicon Wafers Sizes up to 300mm

Capable of handling custom substrate shapes, sizes and materials

Thickness up to 2µm

Tolerance: +/- 7% or better

Film Stress: Variable

Refractive Index: 1.5-1.9 (Per customer request)

Temperature: 350C

Our Low Stress PECVD Nitride is a single sided film that has been optimized for wafers requiring minimal thermal processing. Because Low Stress PECVD Nitride is deposited at low temperatures, it offers greater flexibility and can be deposited over any of our other thin films.

Wafers Sizes up to 300mm
Capable of handling custom substrate shapes, sizes and materials
Thickness up to 2µm

Tolerance: +/- 7% or better

Film Stress: <250MPa

Refractive Index: 2.00

Temperature: 350C

Our PECVD Oxide is a single sided film that has been optimized for wafers requiring minimal thermal processing. Because PECVD is a deposited oxide, it offers greater flexibility than thermal oxide and can be deposited over any of our other thin films.

Wafers Sizes up to 300mm

Capable of handling custom substrate shapes, sizes and materials

Thickness up to 2µm

Tolerance: +/- 7% or better

Film Stress: 400MPa Compressive

Refractive Index: 1.46

Temperature: 350C

PECVD Silicon Carbide for wafers requiring minimal thermal processing. Because PECVD Silicon Carbide is deposited at low temperatures, it offers greater flexibility and can be deposited over any of our other thin films

Wafers Sizes up to 300mm

Capable of handling custom substrate shapes, sizes and materials

Thickness up to 2um

Tolerance: +/- 7% or better

Film Stress: <100MPa

Refractive Index: 2.73

Temperature: 350C

Nitride on Silicon Nitride (SiN) for Printed Electronics

Scientists have used the following substrates to research inkjet printing of graphene on silicon nitride for printed electronics.

SiN Item #1913
100mm P/B <100> 1-10 ohm-cm 500um SSP Prime Grade with 300nm of Standard LPCVD Nitride

Silicon Nitride Roughness Value

A scientist requesd a SiN quote.

Researcher:

Since the fabrication process is critical and it requires the RMS surface roughness values of the nitride to be <0.5nm I must request for a certificate or analysis results (such as AFM scan) proving that the surface roughness RMS values are <0.5nm. Also I would like to know some additional parameters of the Si3N4 layer such as the Refractive index, Density, Poisson’s ratio, Young’s modulus, stress value, thickness and total thickness variation. If you can provide me with such information and somehow certify the surface roughness, then I would be glad to start the ordering process.

UniversityWafer, Inc. Quoted the following:

Si + nitride
<100>
100mm (4’’)
Double Side Polished
Thickness ~350um +100nm (or +50nm) Nitride
RMS surface roughness of nitride <0.5nm

50.8mm (2 Inch) LPCVD Nitride on Silicon Wafers

Below are just some of the SiN wafers that we have available.

ID	Diam	Type	Dop	Orien	Res (Ohm-cm)	Thick (um)	Polish
100nm Stoichiometric LPCVD Nitride
3307	50.8mm	P	B	<100>	0.001-0.005	270um	SSP
3546	50.8mm	N	P	<100>	1-10	280um	SSP
3538	50.8mm	P	B	<100>	1-10	280um	SSP
620nm LPCVD Nitride
3445	50.8mm	P	B	<100>	0-100	500um	DSP
300nm Stoichiometric LPCVD Nitride
3547	50.8mm	N	P	<100>	1-10	280um	SSP
3539	50.8mm	P	B	<100>	1-10	280um	SSP
100nm Low Stress LPCVD Nitride
3540	50.8mm	P	B	<100>	1-10	280um	SSP
3548	50.8mm	N	P	<100>	1-10	280um	SSP
3547	50.8mm	N	P	<100>	1-10	280um	SSP
300nm Low Stress LPCVD Nitride
3541	50.8mm	P	B	<100>	1-10	280um	SSP
3549	50.8mm	N	P	<100>	1-10	280um	SSP
2,000nm Low Stress LPCVD Nitride
3542	50.8mm	P	B	<100>	1-10	280um	SSP
3550	50.8mm	N	P	<100>	1-10	280um	SSP
100nm Super Low Stress LPCVD Nitride
3543	50.8mm	P	B	<100>	1-10	280um	SSP
3551	50.8mm	N	P	<100>	1-10	280um	SSP
300nm Super Low Stress LPCVD Nitride
3544	50.8mm	P	B	<100>	1-10	280um	SSP
3552	50.8mm	N	P	<100>	1-10	280um	SSP
2,000nm Super Low Stress LPCVD Nitride
3545	50.8mm	P	B	<100>	1-10	280um	SSP
3553	50.8mm	N	P	<100>	1-10	280um	SSP

 

76.2mm (3 inch) Nitride on Silicon

 

ID	Diam	Type	Dopant	Orien	Res (Ohm-cm)	Thick (um)	Polish	Grade	Description
3446	76.2mm			<111>		250um	DSP	Test	w/ 200nm Low Stress Nitride
3480	76.2mm	ANY	ANY	<100>		250um	DSP	Test	w/ 200nm Low Stress Nitride
3554	76.2mm	P	B	<100>	1-10	380um	SSP	Prime	with 100nm Standard LPCVD Nitride
3555	76.2mm	P	B	<100>	1-10	380um	SSP	Prime	with 300nm Standard LPCVD Nitride
3556	76.2mm	P	B	<100>	1-10	380um	SSP	Prime	with 100nm Low Stress LPCVD Nitride
3557	76.2mm	P	B	<100>	1-10	380um	SSP	Prime	with 300nm Low Stress LPCVD Nitride
3558	76.2mm	P	B	<100>	1-10	380um	SSP	Prime	with 2,000nm Low Stress LPCVD Nitride
3559	76.2mm	P	B	<100>	1-10	380um	SSP	Prime	with 100nm Super Low Stress LPCVD Nitride
3560	76.2mm	P	B	<100>	1-10	380um	SSP	Prime	with 300nm Super Low Stress LPCVD Nitride
3561	76.2mm	P	B	<100>	1-10	380um	SSP	Prime	with 2,000nm Super Low Stress LPCVD Nitride
3562	76.2mm	N	P	<100>	1-10	380um	SSP	Prime	with 100nm Standard LPCVD Nitride
3563	76.2mm	N	P	<100>	1-10	380um	SSP	Prime	with 300nm Standard LPCVD Nitride
3564	76.2mm	N	P	<100>	1-10	380um	SSP	Prime	with 100nm Low Stress LPCVD Nitride
3565	76.2mm	N	P	<100>	1-10	380um	SSP	Prime	with 300nm Low Stress LPCVD Nitride
3566	76.2mm	N	P	<100>	1-10	380um	SSP	Prime	with 2,000nm Low Stress LPCVD Nitride
3567	76.2mm	N	P	<100>	1-10	380um	SSP	Prime	with 100nm Super Low Stress LPCVD Nitride
3568	76.2mm	N	P	<100>	1-10	380um	SSP	Prime	with 300nm Super Low Stress LPCVD Nitride
3569	76.2mm	N	P	<100>	1-10	380um	SSP	Prime	with 2,000nm Super Low Stress LPCVD Nitride

 

100mm (4 Inch) Nitride on Silicon

 

ID	Diam	Type	Dopant	Orien	Res (Ohm-cm)	Thick (um)	Polish	Grade	Description
1911	100mm	P	B	<100>	1-10	500um	SSP	Prime	w/ 100nm of Standard LPCVD Nitride
1912	100mm	P	B	<100>	0.001-0.005	500um	SSP	Prime	with 100nm of Standard LPCVD Nitride
1913	100mm	P	B	<100>	1-10	500um	SSP	Prime	with 300nm of Standard LPCVD Nitride
1915	100mm	N	P	<100>	1-10	500um	SSP	Prime	with 100nm of Standard LPCVD Nitride
1917	100mm	P	B	<100>	1-10	500um	SSP	Prime	with 100nm of Low Stress LPCVD Nitride
1919	100mm	N	P	<100>	1-10	500um	SSP	Prime	with 100nm of Low Stress LPCVD Nitride
1921	100mm	P	B	<100>	1-10	500um	SSP	Prime	with 100nm Super Low Stress LPCVD Nitride
1922	100mm	P	B	<100>	0.001-0.005	500um	SSP	Prime	with 100nm Super Low Stress LPCVD Nitride
2898	100mm	N	P	<100>	1-10	500um	DSP	Prime	with 100nm Low-Stress LPCVD Nitride
3455	100mm	P	B	<100>	1-10	500	SSP	Prime	with 500nm Low Stress LPCVD Nitride
3570	100mm	P	B	<100>	1-10	500um	SSP	Prime	with 300nm Low Stress LPCVD Nitride
3571	100mm	P	B	<100>	1-10	500um	SSP	Prime	with 2,000nm Low Stress LPCVD Nitride
3572	100mm	P	B	<100>	1-10	500um	SSP	Prime	with 300nm Super Low Stress LPCVD Nitride
3573	100mm	P	B	<100>	1-10	500um	SSP	Prime	with 2,000nm Super Low Stress LPCVD Nitride
3574	100mm	N	P	<100>	1-10	500um	SSP	Prime	with 300nm Standard LPCVD Nitride
3575	100mm	N	P	<100>	1-10	500um	SSP	Prime	with 300nm Low Stress LPCVD Nitride
3576	100mm	N	P	<100>	1-10	500um	SSP	Prime	with 2,000nm Low Stress LPCVD Nitride
3577	100mm	N	P	<100>	1-10	500um	SSP	Prime	with 100nm Super Low Stress LPCVD Nitride
3578	100mm	N	P	<100>	1-10	500um	SSP	Prime	with 300nm Super Low Stress LPCVD Nitride
3579	100mm	N	P	<100>	1-10	500um	SSP	Prime	with 2,000nm Super Low Stress LPCVD Nitride

 

150mm (6 Inch) Nitride on Silicon

 

ID	Diam	Type	Dopant	Orien	Res (Ohm-cm)	Thick (um)	Polish	Grade	Description
3580	150mm	P	B	<100>	1-100	625um	SSP	Prime	with 100nm Standard LPCVD Nitride
3581	150mm	P	B	<100>	1-100	625um	SSP	Prime	with 300nm Standard LPCVD Nitride
3582	150mm	P	B	<100>	1-100	625um	SSP	Prime	with 100nm Low Stress LPCVD Nitride
3583	150mm	P	B	<100>	1-100	625um	SSP	Prime	with 300nm Low Stress LPCVD Nitride
3584	150mm	P	B	<100>	1-100	625um	SSP	Prime	with 2,000nm Low Stress LPCVD Nitride
3585	150mm	P	B	<100>	1-100	625um	SSP	Prime	with 100nm Super Low Stress LPCVD Nitride
3586	150mm	P	B	<100>	1-100	625um	SSP	Prime	with 300nm Super Low Stress LPCVD Nitride
3587	150mm	P	B	<100>	1-100	625um	SSP	Prime	with 2,000nm Super Low Stress LPCVD Nitride

Crystallographic Structure Phases of Silicon Nitride

Below is a typical Q&A before an order is placed.

Researcher:

I would like to request a quote for Silicon Nitride on Silicon Wafers with the following specs: - wafer size 2" - SiN thickness 300 nm - quantity 10 pcs As I know, silicon nitride has three crystallographic structure phases (α, β, and γ) and film stress could be controlled in a wide range. Could you provide information on the crystallographic structure phases of silicon nitride that you have?

We want to test epi-silver growth on top of the silicon nitride. Ideally, epitaxial metal should be grown on a lattice-matched crystalline substrate. But, the mismatch could take place and small values are acceptable, or higher-order lattices and stress can work. Since silicon nitride has three crystallographic structure phases (α, β, and γ) and film stress could be controlled in a wide range we want to try different SiN wafers for the epi-silver growth. For this, I would like to know if you can provide SiN with different crystallographic structure phases (or have any information about the crystal structure of the SiN). Also, we want to have wafers with different SiN film stress. Beyond this, we don't have other specs for wafers at this point.

The wafer size - 2" SiN thickness - 300 nm Different stress levels Diffrerent rystallographic structure phases Could you provide more information in this respect so that I could narrow down my request?

UniversityWafer Answer:

We have: 2" SSP Silicon

SiN thickness - 300 nm(no crystallographic structure)

To minimize wafer deformation when Silicon Nitride film is deposited, we recommend double-side-polished wafers and wafers thicker than normal.

If you plan to grow Epi layers on top of the Nitride layer, then you need a layer of stoichiometric Si3N4. Because of lattice mismatch, the stoichiometric Nitride layer will have a stress of about 1,000 MPa in tension (we guarantee stress >800 MPa in tension). This is such a large stress that layers > 500nm thick are impossible for they will crack. This stress will also deform the wafer, which is why we recommend double-side-polished wafers and wafers thicker than normal.

One can control or eliminate this stress or even turn it into compressive stress, by depositing a mix of Silicon Nitrides, with larger proportion of Silicon atoms than the stoichiometric 3:4. We can do that both in LPCVD and in PECVD reactors. However, that decreases the crystalinity of the Nitride layer which seems counter to your objective.

I do not know which Si3N4 crystal polymorph is created in LPCVD. It is certainly not γ . It is likely β or a mixture of α and β. That is not something that is routinely measured.

Note: The Nitride film is deposited in a reactor that processes 25 wafers at a time. It costs as much to process 25 wafers as to process 1. Hence, 25 wafers is effectively the minimum order quantity.

You can use thicker or thinner Silicon wafers, or even one-side-polished wafers (if you see fit), with corresponding price adjustments.