Nitride Silicon Wafer Deposition
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Silicon Nitride Wafers LPCVD
Ask for the Nitride wafers that we have in stock.
Stoichiometric LPCVD Nitride - Our Standard nitride film works great as hard mask for KOH etching and can be used as a tool for defining active regions during field oxidation.
Our Low Stress Nitride retains all of the same benefits associated with our standard nitride but can also be used for Membranes, Cantilever Beams and other mechanical structures associated with MEMS devices.
Our Super low stress nitride has been developed for applications that require extremely low film stress. Film Stress can also be customized to meet your unique specifications.
Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance. Silicon Nitride is produced in three main types; Reaction Bonded Silicon Nitride (RBSN), Hot Pressed Silicon Nitride (HPSN) and Sintered Silicon Nitride (SSN). We have Silicon Nitride 2" - 12" all specs and quanities.
Fill out the form for an immediate quote.
Silicon Nitride Wafers LPCVD
Ask for the Nitride wafers that we have in stock.
Stoichiometric LPCVD Nitride - Our Standard nitride film works great as hard mask for KOH etching and can be used as a tool for defining active regions during field oxidation.
Our Low Stress Nitride retains all of the same benefits associated with our standard nitride but can also be used for Membranes, Cantilever Beams and other mechanical structures associated with MEMS devices.
Our Super low stress nitride has been developed for applications that require extremely low film stress. Film Stress can also be customized to meet your unique specifications.
Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance. Silicon Nitride is produced in three main types; Reaction Bonded Silicon Nitride (RBSN), Hot Pressed Silicon Nitride (HPSN) and Sintered Silicon Nitride (SSN). We have Silicon Nitride 2" - 12" all specs and quanities.
Fill out the form for an immediate quote.
Silicon Nitride Wafers PECVD
Our PECVD Nitride is a single sided film that has been optimized for wafers requiring minimal thermal processing. Because PECVD Nitride is deposited at low temperatures, it offers greater flexibility and can be deposited over any of our other thin films.
Wafers Sizes up to 300mm
Capable of handling custom substrate shapes, sizes and materials
Thickness up to 2µm
Tolerance: +/- 7% or better
Film Stress: 600MPa Tensile
Refractive Index: 2.00
Temperature: 350C
Our PECVD OxyNitride is a single sided film that has been optimized for wafers requiring minimal thermal processing. Because PECVD OxyNitride is deposited at low temperatures, it offers greater flexibility and can be deposited over any of our other thin films.
Wafers Sizes up to 300mm
Capable of handling custom substrate shapes, sizes and materials
Thickness up to 2µm
Tolerance: +/- 7% or better
Film Stress: Variable
Refractive Index: 1.5-1.9 (Per customer request)
Temperature: 350C
Our Low Stress PECVD Nitride is a single sided film that has been optimized for wafers requiring minimal thermal processing. Because Low Stress PECVD Nitride is deposited at low temperatures, it offers greater flexibility and can be deposited over any of our other thin films.
Wafers Sizes up to 300mm
Capable of handling custom substrate shapes, sizes and materials
Thickness up to 2µm
Tolerance: +/- 7% or better
Film Stress: <250MPa
Refractive Index: 2.00
Temperature: 350C
Our PECVD Oxide is a single sided film that has been optimized for wafers requiring minimal thermal processing. Because PECVD is a deposited oxide, it offers greater flexibility than thermal oxide and can be deposited over any of our other thin films.
Wafers Sizes up to 300mm
Capable of handling custom substrate shapes, sizes and materials
Thickness up to 2µm
Tolerance: +/- 7% or better
Film Stress: 400MPa Compressive
Refractive Index: 1.46
Temperature: 350C
PECVD Silicon Carbide for wafers requiring minimal thermal processing. Because PECVD Silicon Carbide is deposited at low temperatures, it offers greater flexibility and can be deposited over any of our other thin films
Wafers Sizes up to 300mm
Capable of handling custom substrate shapes, sizes and materials
Thickness up to 2um
Tolerance: +/- 7% or better
Film Stress: <100MPa
Refractive Index: 2.73
Temperature: 350C
