Stochiometric, low stress and super low stress nitride can be purchased online in quantities from just one wafer to thousands.
We have all diameters, from 25.4mm to 300mm avaialble. Below are just some of what we have in stock.
Ask for the Nitride wafers that we have in stock.
Stoichiometric LPCVD Nitride - Our Standard nitride film works great as hard mask for KOH etching and can be used as a tool for defining active regions during field oxidation.
Our Low Stress Nitride retains all of the same benefits associated with our standard nitride but can also be used for Membranes, Cantilever Beams and other mechanical structures associated with MEMS devices.
Our Super low stress nitride has been developed for applications that require extremely low film stress. Film Stress can also be customized to meet your unique specifications.
Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance. Silicon Nitride is produced in three main types; Reaction Bonded Silicon Nitride (RBSN), Hot Pressed Silicon Nitride (HPSN) and Sintered Silicon Nitride (SSN). We have Silicon Nitride 2" - 12" all specs and quanities.
Fill out the form for an immediate quote.
Ask for the Nitride wafers that we have in stock.
Stoichiometric LPCVD Nitride - Our Standard nitride film works great as hard mask for KOH etching and can be used as a tool for defining active regions during field oxidation.
Our Low Stress Nitride retains all of the same benefits associated with our standard nitride but can also be used for Membranes, Cantilever Beams and other mechanical structures associated with MEMS devices.
Our Super low stress nitride has been developed for applications that require extremely low film stress. Film Stress can also be customized to meet your unique specifications.
Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance. Silicon Nitride is produced in three main types; Reaction Bonded Silicon Nitride (RBSN), Hot Pressed Silicon Nitride (HPSN) and Sintered Silicon Nitride (SSN). We have Silicon Nitride 2" - 12" all specs and quanities.
Fill out the form for an immediate quote.
Our PECVD Nitride is a single sided film that has been optimized for wafers requiring minimal thermal processing. Because PECVD Nitride is deposited at low temperatures, it offers greater flexibility and can be deposited over any of our other thin films.
Wafers Sizes up to 300mm
Capable of handling custom substrate shapes, sizes and materials
Thickness up to 2µm
Tolerance: +/- 7% or better
Film Stress: 600MPa Tensile
Refractive Index: 2.00
Temperature: 350C
Our PECVD OxyNitride is a single sided film that has been optimized for wafers requiring minimal thermal processing. Because PECVD OxyNitride is deposited at low temperatures, it offers greater flexibility and can be deposited over any of our other thin films.
Capable of handling custom substrate shapes, sizes and materials
Thickness up to 2µm
Tolerance: +/- 7% or better
Film Stress: Variable
Refractive Index: 1.5-1.9 (Per customer request)
Temperature: 350C
Our Low Stress PECVD Nitride is a single sided film that has been optimized for wafers requiring minimal thermal processing. Because Low Stress PECVD Nitride is deposited at low temperatures, it offers greater flexibility and can be deposited over any of our other thin films.
Wafers Sizes up to 300mm
Capable of handling custom substrate shapes, sizes and materials
Thickness up to 2µm
Tolerance: +/- 7% or better
Film Stress: <250MPa
Refractive Index: 2.00
Temperature: 350C
Our PECVD Oxide is a single sided film that has been optimized for wafers requiring minimal thermal processing. Because PECVD is a deposited oxide, it offers greater flexibility than thermal oxide and can be deposited over any of our other thin films.
Wafers Sizes up to 300mm
Capable of handling custom substrate shapes, sizes and materials
Thickness up to 2µm
Tolerance: +/- 7% or better
Film Stress: 400MPa Compressive
Refractive Index: 1.46
Temperature: 350C
PECVD Silicon Carbide for wafers requiring minimal thermal processing. Because PECVD Silicon Carbide is deposited at low temperatures, it offers greater flexibility and can be deposited over any of our other thin films
Wafers Sizes up to 300mm
Capable of handling custom substrate shapes, sizes and materials
Thickness up to 2um
Tolerance: +/- 7% or better
Film Stress: <100MPa
Refractive Index: 2.73
Temperature: 350C
Scientists have used the following substrates to research inkjet printing of graphene on silicon nitride for printed electronics.
SiN Item #1913
100mm P/B <100> 1-10 ohm-cm 500um SSP Prime Grade with 300nm of Standard LPCVD Nitride
The wafer is used for Electro Luminescent (EL) research. The EL is emitted from porous segment.
A wafer which is extremely low-etch-rate of HF is needed to make a porous segment.
Thick-film EL panels applications include back-lights for LCD vehicle displays. They benefit the environement by not containing mercury.
Diameter : 4 inch
Resistance : 1-10 ohm-cm
Orientation : 100
SSP thickness standard
SiO2 - thermal oxidation
Thickness of SiO2 - 800 nm
Silicon nitride - extremely low etch rate of HF
Thickness of silicon nitride - 200 nm
Please contact us for pricing.
A scientist requesd a SiN quote.
Researcher:
Since the fabrication process is critical and it requires the RMS surface roughness values of the nitride to be <0.5nm I must request for a certificate or analysis results (such as AFM scan) proving that the surface roughness RMS values are <0.5nm. Also I would like to know some additional parameters of the Si3N4 layer such as the Refractive index, Density, Poisson’s ratio, Young’s modulus, stress value, thickness and total thickness variation. If you can provide me with such information and somehow certify the surface roughness, then I would be glad to start the ordering process.
UniversityWafer, Inc. Quoted the following:
Si + nitride
<100>
100mm (4’’)
Double Side Polished
Thickness ~350um +100nm (or +50nm) Nitride
RMS surface roughness of nitride <0.5nm
Below are just some of the SiN wafers that we have available.
ID | Diam | Type | Dop | Orien | Res (Ohm-cm) | Thick (um) | Polish |
100nm Stoichiometric LPCVD Nitride |
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3307 | 50.8mm | P | B | <100> | 0.001-0.005 | 270um | SSP |
3546 | 50.8mm | N | P | <100> | 1-10 | 280um | SSP |
3538 | 50.8mm | P | B | <100> | 1-10 | 280um | SSP |
620nm LPCVD Nitride |
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3445 | 50.8mm | P | B | <100> | 0-100 | 500um | DSP |
300nm Stoichiometric LPCVD Nitride |
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3547 | 50.8mm | N | P | <100> | 1-10 | 280um | SSP |
3539 | 50.8mm | P | B | <100> | 1-10 | 280um | SSP |
100nm Low Stress LPCVD Nitride |
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3540 | 50.8mm | P | B | <100> | 1-10 | 280um | SSP |
3548 | 50.8mm | N | P | <100> | 1-10 | 280um | SSP |
3547 | 50.8mm | N | P | <100> | 1-10 | 280um | SSP |
300nm Low Stress LPCVD Nitride |
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3541 | 50.8mm | P | B | <100> | 1-10 | 280um | SSP |
3549 | 50.8mm | N | P | <100> | 1-10 | 280um | SSP |
2,000nm Low Stress LPCVD Nitride |
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3542 | 50.8mm | P | B | <100> | 1-10 | 280um | SSP |
3550 | 50.8mm | N | P | <100> | 1-10 | 280um | SSP |
100nm Super Low Stress LPCVD Nitride | |||||||
3543 | 50.8mm | P | B | <100> | 1-10 | 280um | SSP |
3551 | 50.8mm | N | P | <100> | 1-10 | 280um | SSP |
300nm Super Low Stress LPCVD Nitride |
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3544 | 50.8mm | P | B | <100> | 1-10 | 280um | SSP |
3552 | 50.8mm | N | P | <100> | 1-10 | 280um | SSP |
2,000nm Super Low Stress LPCVD Nitride |
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3545 | 50.8mm | P | B | <100> | 1-10 | 280um | SSP |
3553 | 50.8mm | N | P | <100> | 1-10 | 280um | SSP |
ID | Diam | Type | Dopant | Orien | Res (Ohm-cm) | Thick (um) | Polish | Grade | Description |
3446 | 76.2mm | <111> | 250um | DSP | Test | w/ 200nm Low Stress Nitride | |||
3480 | 76.2mm | ANY | ANY | <100> | 250um | DSP | Test | w/ 200nm Low Stress Nitride | |
3554 | 76.2mm | P | B | <100> | 1-10 | 380um | SSP | Prime | with 100nm Standard LPCVD Nitride |
3555 | 76.2mm | P | B | <100> | 1-10 | 380um | SSP | Prime | with 300nm Standard LPCVD Nitride |
3556 | 76.2mm | P | B | <100> | 1-10 | 380um | SSP | Prime | with 100nm Low Stress LPCVD Nitride |
3557 | 76.2mm | P | B | <100> | 1-10 | 380um | SSP | Prime | with 300nm Low Stress LPCVD Nitride |
3558 | 76.2mm | P | B | <100> | 1-10 | 380um | SSP | Prime | with 2,000nm Low Stress LPCVD Nitride |
3559 | 76.2mm | P | B | <100> | 1-10 | 380um | SSP | Prime | with 100nm Super Low Stress LPCVD Nitride |
3560 | 76.2mm | P | B | <100> | 1-10 | 380um | SSP | Prime | with 300nm Super Low Stress LPCVD Nitride |
3561 | 76.2mm | P | B | <100> | 1-10 | 380um | SSP | Prime | with 2,000nm Super Low Stress LPCVD Nitride |
3562 | 76.2mm | N | P | <100> | 1-10 | 380um | SSP | Prime | with 100nm Standard LPCVD Nitride |
3563 | 76.2mm | N | P | <100> | 1-10 | 380um | SSP | Prime | with 300nm Standard LPCVD Nitride |
3564 | 76.2mm | N | P | <100> | 1-10 | 380um | SSP | Prime | with 100nm Low Stress LPCVD Nitride |
3565 | 76.2mm | N | P | <100> | 1-10 | 380um | SSP | Prime | with 300nm Low Stress LPCVD Nitride |
3566 | 76.2mm | N | P | <100> | 1-10 | 380um | SSP | Prime | with 2,000nm Low Stress LPCVD Nitride |
3567 | 76.2mm | N | P | <100> | 1-10 | 380um | SSP | Prime | with 100nm Super Low Stress LPCVD Nitride |
3568 | 76.2mm | N | P | <100> | 1-10 | 380um | SSP | Prime | with 300nm Super Low Stress LPCVD Nitride |
3569 | 76.2mm | N | P | <100> | 1-10 | 380um | SSP | Prime | with 2,000nm Super Low Stress LPCVD Nitride |
ID | Diam | Type | Dopant | Orien | Res (Ohm-cm) | Thick (um) | Polish | Grade | Description |
1911 | 100mm | P | B | <100> | 1-10 | 500um | SSP | Prime | w/ 100nm of Standard LPCVD Nitride |
1912 | 100mm | P | B | <100> | 0.001-0.005 | 500um | SSP | Prime | with 100nm of Standard LPCVD Nitride |
1913 | 100mm | P | B | <100> | 1-10 | 500um | SSP | Prime | with 300nm of Standard LPCVD Nitride |
1915 | 100mm | N | P | <100> | 1-10 | 500um | SSP | Prime | with 100nm of Standard LPCVD Nitride |
1917 | 100mm | P | B | <100> | 1-10 | 500um | SSP | Prime | with 100nm of Low Stress LPCVD Nitride |
1919 | 100mm | N | P | <100> | 1-10 | 500um | SSP | Prime | with 100nm of Low Stress LPCVD Nitride |
1921 | 100mm | P | B | <100> | 1-10 | 500um | SSP | Prime | with 100nm Super Low Stress LPCVD Nitride |
1922 | 100mm | P | B | <100> | 0.001-0.005 | 500um | SSP | Prime | with 100nm Super Low Stress LPCVD Nitride |
2898 | 100mm | N | P | <100> | 1-10 | 500um | DSP | Prime | with 100nm Low-Stress LPCVD Nitride |
3455 | 100mm | P | B | <100> | 1-10 | 500 | SSP | Prime | with 500nm Low Stress LPCVD Nitride |
3570 | 100mm | P | B | <100> | 1-10 | 500um | SSP | Prime | with 300nm Low Stress LPCVD Nitride |
3571 | 100mm | P | B | <100> | 1-10 | 500um | SSP | Prime | with 2,000nm Low Stress LPCVD Nitride |
3572 | 100mm | P | B | <100> | 1-10 | 500um | SSP | Prime | with 300nm Super Low Stress LPCVD Nitride |
3573 | 100mm | P | B | <100> | 1-10 | 500um | SSP | Prime | with 2,000nm Super Low Stress LPCVD Nitride |
3574 | 100mm | N | P | <100> | 1-10 | 500um | SSP | Prime | with 300nm Standard LPCVD Nitride |
3575 | 100mm | N | P | <100> | 1-10 | 500um | SSP | Prime | with 300nm Low Stress LPCVD Nitride |
3576 | 100mm | N | P | <100> | 1-10 | 500um | SSP | Prime | with 2,000nm Low Stress LPCVD Nitride |
3577 | 100mm | N | P | <100> | 1-10 | 500um | SSP | Prime | with 100nm Super Low Stress LPCVD Nitride |
3578 | 100mm | N | P | <100> | 1-10 | 500um | SSP | Prime | with 300nm Super Low Stress LPCVD Nitride |
3579 | 100mm | N | P | <100> | 1-10 | 500um | SSP | Prime | with 2,000nm Super Low Stress LPCVD Nitride |
ID | Diam | Type | Dopant | Orien | Res (Ohm-cm) | Thick (um) | Polish | Grade | Description |
3580 | 150mm | P | B | <100> | 1-100 | 625um | SSP | Prime | with 100nm Standard LPCVD Nitride |
3581 | 150mm | P | B | <100> | 1-100 | 625um | SSP | Prime | with 300nm Standard LPCVD Nitride |
3582 | 150mm | P | B | <100> | 1-100 | 625um | SSP | Prime | with 100nm Low Stress LPCVD Nitride |
3583 | 150mm | P | B | <100> | 1-100 | 625um | SSP | Prime | with 300nm Low Stress LPCVD Nitride |
3584 | 150mm | P | B | <100> | 1-100 | 625um | SSP | Prime | with 2,000nm Low Stress LPCVD Nitride |
3585 | 150mm | P | B | <100> | 1-100 | 625um | SSP | Prime | with 100nm Super Low Stress LPCVD Nitride |
3586 | 150mm | P | B | <100> | 1-100 | 625um | SSP | Prime | with 300nm Super Low Stress LPCVD Nitride |
3587 | 150mm | P | B | <100> | 1-100 | 625um | SSP | Prime | with 2,000nm Super Low Stress LPCVD Nitride |
Below is a typical Q&A before an order is placed.
Researcher:
I would like to request a quote for Silicon Nitride on Silicon Wafers with the following specs: - wafer size 2" - SiN thickness 300 nm - quantity 10 pcs As I know, silicon nitride has three crystallographic structure phases (α, β, and γ) and film stress could be controlled in a wide range. Could you provide information on the crystallographic structure phases of silicon nitride that you have?
We want to test epi-silver growth on top of the silicon nitride. Ideally, epitaxial metal should be grown on a lattice-matched crystalline substrate. But, the mismatch could take place and small values are acceptable, or higher-order lattices and stress can work. Since silicon nitride has three crystallographic structure phases (α, β, and γ) and film stress could be controlled in a wide range we want to try different SiN wafers for the epi-silver growth. For this, I would like to know if you can provide SiN with different crystallographic structure phases (or have any information about the crystal structure of the SiN). Also, we want to have wafers with different SiN film stress. Beyond this, we don't have other specs for wafers at this point.
The wafer size - 2" SiN thickness - 300 nm Different stress levels Diffrerent rystallographic structure phases Could you provide more information in this respect so that I could narrow down my request?
UniversityWafer Answer:
We have: 2" SSP Silicon
SiN thickness - 300 nm(no crystallographic structure)
To minimize wafer deformation when Silicon Nitride film is deposited, we recommend double-side-polished wafers and wafers thicker than normal.
If you plan to grow Epi layers on top of the Nitride layer, then you need a layer of stoichiometric Si3N4. Because of lattice mismatch, the stoichiometric Nitride layer will have a stress of about 1,000 MPa in tension (we guarantee stress >800 MPa in tension). This is such a large stress that layers > 500nm thick are impossible for they will crack. This stress will also deform the wafer, which is why we recommend double-side-polished wafers and wafers thicker than normal.
One can control or eliminate this stress or even turn it into compressive stress, by depositing a mix of Silicon Nitrides, with larger proportion of Silicon atoms than the stoichiometric 3:4. We can do that both in LPCVD and in PECVD reactors. However, that decreases the crystalinity of the Nitride layer which seems counter to your objective.
I do not know which Si3N4 crystal polymorph is created in LPCVD. It is certainly not γ . It is likely β or a mixture of α and β. That is not something that is routinely measured.
Note: The Nitride film is deposited in a reactor that processes 25 wafers at a time. It costs as much to process 25 wafers as to process 1. Hence, 25 wafers is effectively the minimum order quantity.
You can use thicker or thinner Silicon wafers, or even one-side-polished wafers (if you see fit), with corresponding price adjustments.