Stoichiometric Silicon Nitride LPCVD Deposition
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Stoichiometric LPCVD Nitride on Silicon Wafers
We have a large selection of nitride coated silicon wafers.
LPCVD NITRIDE SPECIFICATIONS
- Thickness range: 100Å – 4500Å
- Sides processed: Both
- Refractive index: 2.00 +/-.05 @632nm
- Film stress: >800MPa Tensile Stress
- Wafer size: 1" -12″inches
- Temperature: 800C°
- Gases: Dichlorosilane, Ammonia
- Equipment: Horizontal vacuum furnace
Client Nitride Nitride on Silicon Question:
Our lab is planning to fabricate some silicon nitride waveguide. so we need to buy some silicon nitride wafers, which means we need around 150 nm stoichiometric silicon nitride films on thermal oxides silicon wafers. the thermal oxide layer should be at least 1 um thickness. silicon substrate is flexible. #1385 is good thermal oxide wafer for us. Do you have the processing service to grow 150 nm LPCVD low stress silicon nitride on #1385? can you please send me a quote? Thanks.
Answer
100mm P/B <100> 1-10 ohm-cm 500um SSP Prime Grade with 1um of Oxide and 150 nm LPCVD low stress silicon
Exw price $97.90 each for 25pcs
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