Stoichiometric Silicon Nitride LPCVD

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Stoichiometric LPCVD Nitride on Silicon Wafers

We have a large selection of nitride coated silicon wafers.

NITRIDE SPECIFICATIONS

  • Thickness range: 100Å – 4500Å
  • Sides processed: Both
  • Refractive index: 2.00 +/-.05 @632nm
  • Film stress: >800MPa Tensile Stress
  • Wafer size: 1" -12″inches
  • Temperature: 800C°
  • Gases: Dichlorosilane, Ammonia
  • Equipment: Horizontal vacuum furnace

Stoichiometric Silicon Nitride LPCVD Wafers

Client Nitride Question:

Our lab is planning to fabricate some silicon nitride waveguide. so we need to buy some silicon nitride wafers, which means we need around 150 nm stoichiometric silicon nitride films on thermal oxides silicon wafers. the thermal oxide layer should be at least 1 um  thickness. silicon substrate is flexible. #1385 is good thermal oxide wafer for us.  Do you have the processing service to grow 150 nm LPCVD low stress silicon nitride on #1385? can you please send me a quote? Thanks.

Answer

100mm P/B <100> 1-10 ohm-cm 500um SSP Prim Grade with 1um of Oxide and 150 nm LPCVD low stress silicon 
Exw price $97.90 each for 25pcs