Targeted Stress LPCVD Nitride on Silicon Wafers

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Targeted Stress LPCVD Nitride

Targetted Stress LPCVD nitride process should be used when you need to customize film stress for your respective applications.

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Targeted Stress LPCVD Nitride SPECIFICATIONS

  • Thickness range: 50Å – 4µm
  • Thickness tolerance: +/-5%
  • Within wafer uniformity: +/-5% or better
  • Wafer to wafer uniformity: +/-5% or better
  • Sides processed: both
  • Refractive index: 2.05 – 2.35
  • Film stress: Your target +/-50MPa Tensile Stress
  • Wafer size: 50mm, 100mm, 125mm, 150mm, 200mm
  • Wafer thickness: 100µm – 2,000µm
  • Wafer material: Silicon, Silicon on Insulator, Quartz
  • Temperature: 800C° – 820C°
  • Gases: Dichlorosilane, Ammonia
  • Equipment: Horizontal vacuum furnace

 

What Is Targeted Stress LPCVD Nitride?

In this paper we investigate the effects of residual stresses on the properties of polysilicon-silicon nitride under different deposition conditions and report on its characterization. We have collected data from various experiments to compare the stress and Young module of different separation techniques, as well as separated and annealed nitride films, and to identify the most important process parameters and physical properties that modulate the stress and Young module. For example, residual stresses vary considerably between the various deposit conditions. Experiments were conducted to investigate the effects of various processes and conditions for the deposition of poly-silicones and silicon nitsides under a variety of process conditions such as deposition under high pressure, high temperature, low pressure and high humidity. [Sources: 2, 6]

The load on the PECVD layer ranged from tensile to ultra-compressive, depending on temperature, pressure and humidity, as well as residual stress and Young modulus. At 850 degrees Celsius, we observed a marked increase in Young modules of polysilicon-silicon nitride films, and at these two temperature values the voltage was always solid. In contrast, annealed PecVD films that developed tensile stress were observed to reduce RI and Young modules. We found that RI increased with the presence of high pressure, but not with low pressure, as found with other deposition techniques. [Sources: 2, 6]

The tension is inherently tensile due to the low kinetic energy of the silicon atoms, which causes nucleation at small fine grain boundaries, and the migration of surface atoms beyond the grain boundary is the result of increased layer thickness and a reduction in Young modules. [Sources: 2]

In addition, non-standard separation techniques can be used to control the residual stress across a wide range of values. If you need to adjust the film tension for your particular application, you can use stress LPCVD nitride specifically in a variety of applications such as film dilution, thin-film deposition and high-temperature deposition. [Sources: 0, 7]

The nitride is sprayed onto a photoresist which is patterned on the silicon nitride in a 100 mm deep V-groove and produces an uneven thickness. It can be deposited and patterned on a wafer surface, or it can be sprayed onto the photoreceptors to form a thin layer about 1 mm thick. [Sources: 5]

This method is a good choice when a high thickness is required for a certain application, but it also affects the residual stress. Therefore, the best way to address the problem of deposition in a particular application is to really consider what kind of stress would be acceptable. [Sources: 2]

For example, the production of the desired microstructure can be prohibited or not used at all for the purpose of a particular application, such as for high density polyethylene (HDPE). The manufacture of these desired microstructures may be prohibited or prohibited at the time of use in a particular application. [Sources: 1]

The residual stress distribution of material deposition can have a significant impact on the performance and reliability of MEMS devices, especially in the case of high density polyethylene (HDPE). As MEMs become smaller, lower residual voltages can improve the performance, reliability and cost of the devices. [Sources: 2]

This is of crucial importance for high density polyethylene (HDPE) and other materials with low residual stresses, such as polymers. [Sources: 3]

We conducted experiments with amorphous silicon nitride thin films, which were deposited in microelectronic applications using various techniques. We found that silicon nitride layers stored under LPCVD, ALD and RTCVD are tensile, there is no correlation between stress and refractive index, and stress reduces silicon wealth. Our results suggest that compressive stresses are caused by defects in PECVD silicone nitride film. Finally, we have developed and validated a free-standing, low residual stress approach for the construction of high density polyethylene (HDPE) using DRIE etching. [Sources: 4, 6]

Here, the mechanical properties of the thin film can be a decisive parameter for the performance of the device. Figure 1 shows one structure under stress and the other under non-stress (Figure 2). This is one of the most important aspects of thin films for microelectronic applications, and here their mechanical properties such as strength, stiffness, strength - to - weight, etc. can alter the behavior of a thin film, which reduces yield and durability and sometimes leads to breakage. [Sources: 1, 2]

The usual process commonly available in nanofabrication plants is the production of PECVD films with a tension-free film produced by using a high-pressure laser at low temperature (N = 1.5). This is the most efficient method for producing tension-free films and develops the stored stress values into tensile values. P ECVD foil has a deposited stress value of n, ranging from -1.85 to 2.51, with an N range of 0.05 - 1 or a non-stress rate of -0.01. [Sources: 6, 7]

Therefore, it is not only necessary to characterize the polysilicon (silicon nitride) produced in the laboratory, but also to measure the voltage during the production of a batch of processed wafers. Our study showed that only a small number of excess atoms are elastically capable of inducing such compressive stresses [16, 18]. [Sources: 2]

 

 

Sources:

[0]: https://www.frimmbari.it/15464/germanium%20silicon%20lpcvd/1587463454.html

[1]: https://www.google.ch/patents/EP1213260A2?cl=en

[2]: https://www.hindawi.com/journals/jma/2014/954618/

[3]: http://plastmak1.hospedagemdesites.ws/7wj/mems-fabrication-process-ppt.html

[4]: https://aip.scitation.org/doi/10.1063/1.4953805

[5]: https://patents.justia.com/patent/7332127

[6]: https://kundoc.com/pdf-a-comparison-of-the-mechanical-stability-of-silicon-nitride-films-deposited-with.html

[7]: http://journals.sagepub.com/doi/full/10.1177/0003702817715496