Germanium Electrical Grade, Boron, Gallium & Undoped

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Germanium (Ge) Wafers

Germanium wafer applications can divided into five categories.

  • semiconductors
  • photonic devices
  • semiconductor materials
  • electronic devices and electronic materials

Germanium is also used to fabricate electronic devices such as transistors when doped with g - germanium (G).

We have a large selection of Electrical and Optical Grade Germanium Single and double side polished wafers in stock and ready to ship.

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Germanium Wafer Stock

What are Some Germanium Wafer Facts?

A Germanium wafer is also known as a Germanium substrate, a wafer substrate or a photovoltaic wafer. The Germanium used in the manufacturing of solar cells is the reason why a Germanium wafer can be used to make the thin film which is used to make solar cells for residential homes. The Germanium used for this process is actually an inexpensive metal that has a large influence on how the wafer will conduct electricity. Another reason the use of the material is very economical is because it can be used in a wide variety of applications.

The Germanium wafer is made from a mixture of phosphors and sulfur in a quartz structure. This structure results in a very thin, transparent film. There are two different grades used to make the wafer. The first grade is what is called the optical grade used to make the solar cell conductor, the second grade is the electrical grade used to make the solar cell. The germanium crystals used are a perfect conductor for electricity and as a result the wafer is able to conduct electricity very well.

The high refractive index of the germanium wafer makes it a perfect conductor for electricity because the energy absorbed by the light cannot escape to the interior of the wafer. As a result the light is very bright and there are very low losses with this type of wafer. The reason the electrical conductivity is so high with these materials is because the conductivity of most other materials would be very low, but germanium wafers have a high refractive index due to the materials used.

Many people are not aware of the unique properties of this material. The germanium wafer has been used in the manufacturing of some of the better night vision goggles because of the amazing light transmission. You may not have noticed it before, but if you look at some night-vision goggles from past years you will notice that the night vision was brighter and had much more focus than other night vision goggles. These germanium wafers have a special coating on the surface that allows them to have a focus that other wafers do not have. Due to the unique properties of the Germanium wafer it is being used in more electronics.

 

2 inch Germanium Substrate

Below are just some of the Ge wafers that we have in stock:

P-type Gallium Doped Germanium Substrates

  • Ge Substrate (111) 5 x 5 x 0.5 mm, SSP, P-type ,Ga-doped ,R: 0.005-0.01 ohm.cm
  • Ge Substrate: (100) 5x5 x 0.5 mm , SSP, P type Ga doped,R:0.0007-0.002 ohm.cm
  • Ge Substrate: (100) 5x5 x 0.5 mm , SSP, P type Ga doped,R:1-5 ohm.cm -1
  • Ge Substrate: (100) 10x5 x 0.5 mm , SSP, P type Ga doped,R:1-5 ohm.cm
  • Ge Substrate: (100) 10x5 x 0.5 mm , DSP, P type Ga doped,R:0.1-0.5 ohm.cm
  • Ge Substrate (110)+/- 0.7 degree 5x5x0.5 mm, SSP,Sb-doped ,R:0.1-0.5 ohm.cm
  • Ge Substrate (110) 10x5x 0.5 mm, SSP, Sb-doped ,R:0.1-0.5 ohm.cm
  • Ge Wafer (110) Ga-doped, 2" dia x 0.5 mm, SSP Resistivity : 0.1-0.5 ohm-cm
  • Ge Wafer (110) Ga-doped, 2" dia x 0.5 mm, SSP Resistivity : 1-10 ohm-cm
  • Ge Wafer (110) Ga-doped, 2" dia x 0.5 mm, DSP Resistivity : 0.1-0.5 ohm-cm
  • Ge Wafer (110) Ga-doped, 2" dia x 0.5 mm, DSP Resistivity : 1-5 ohm-cm
  • Ge Substrate: (100) 10x10 x 0.5 mm , DSP, P type Ga doped,R:0.1-0.5 ohm.cm
  • Ge Substrate: (100) 10x10 x 0.5 mm , DSP, P type Ga doped,R:1-5 ohm.cm-1
  • Ge Wafer (100) 2" dia x 0.5 mm, SSP, P type ( Ga doped), resistivities: 1-10 ohm-cm
  • Ge Wafer (100) 2" dia x 0.5 mm, SSP, P type ( Ga doped), resistivities: 0.1-0.5ohm-cm
  • Ge Wafer (100) 2" dia x 0.5 mm, SSP, P type ( Ga doped), resistivity: 0.001-0.005 ohm-cm
  • Ge Wafer (100) 2" dia x 0.5 mm, SSP, P type ( Ga doped), resistivity: 0.005-0.009 ohm-cm
  • Ge Wafer (100) 2" dia x 0.5 mm, SSP, P type ( Ga doped), resistivity: 0.01-0.1 ohm-cm
  • Ge Wafer (100) 2" dia x 0.5 mm, DSP, P type ( Ga doped), resistivities: 0.1-0.5ohm-cm
  • Ge Wafer (100) 2" dia x 0.5 mm, DSP, P type ( Ga doped), resistivities: 0.14-0.23 ohm-cm
  • Ge Wafer (100) 2" dia x 0.5 mm, DSP, P type ( Ga doped), resistivities: 0.23-0.24ohm-cm
  • Ge Wafer (100) 2" dia x 0.5 mm, DSP, P type ( Ga doped), resistivities: 1 - 10 ohm-cm
  • Ge Wafer (100) 2" dia x 0.5 mm, DSP, P type ( Ga doped), resistivity: 0.001-0.005 ohm-cm
  • Ge Wafer (100)+/- 2 degree , 2" dia x 0.5 mm, DSP, P type ( Ga doped), resistivities: 10-15 ohm-cm
  • Ge Wafer (111) 2" dia x 0.4 mm, DSP, P type ( Ga doped) Resistivities: 0.035-0.039ohm-cm
  • Ge Wafer (111) 2" dia x 0.5 mm, SSP, P type ( Ga doped), Resistivities: 0.022-0.026 ohm-cm
  • Ge Wafer (111) 2" dia x 0.5 mm, SSP, P type ( Ga doped), resistivities: 10-20 ohm-cm
  • Ge Wafer (111) 2" dia x 0.5 mm, SSP, P type ( Ga doped), resistivities: 1-10 ohm-cm
  • Ge Wafer (111) 2" dia x 0.5 mm, SSP, P type ( Ga doped), resistivities:0.005-0.01 ohm.cm
  • Ge Wafer (111) 2" dia x 0.5 mm, DSP, P type ( Ga doped) resistivities: 0.005-0.01ohm-cm
  • Ge Wafer (111) 2" dia x 0.5 mm, DSP, P type ( Ga doped) resistivities: 0.007-0.008ohm-cm
  • Ge Substrate: (100) 10x10 x 0.5 mm , SSP, P type Ga doped,R:0.0007-0.002ohm.cm-1
  • Ge Substrate: (100) 10x10 x 0.5 mm , SSP, P type Ga doped,R:0.001-0.005 ohm.cm
  • Ge Substrate: (100) 10x10 x 0.5 mm , SSP, P type Ga doped,R:1-5 ohm.cm
  • Ge Wafer (100) 2" dia x 0.4 mm, DSP, P type ( Ga doped), resistivities: 0.1ohm-cm
  • Ge Substrate (111) 10x10x 0.5 mm, SSP, P-type ,Ga-doped ,R: 0.005-0.01 ohm.cm
  • Ge Substrate: (100)+/- 2 degree, 10x10 x 0.5 mm , DSP, P type Ga doped,R:10-15 ohm.cm

N-type Antimony Doped Germanium Substrates

  • Ge Wafer (100) 2" dia x 0.5 mm, SSP, N type ( Sb doped), resistivity:2.5-2.7ohm-cm
  • Ge Substrate (111) 10x5x 0.5 mm, DSP, Sb-doped . 0.005-0.01 Ohm.cm
  • Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, SSP Resistivity: 0.82-0.98ohm.cm
  • Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, SSP Resistivity: 1-5ohm.cm
  • Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, DSP Resistivity: 0.1-0.5ohm.cm
  • Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, DSP Resistivity: 1-5ohm.cm
  • Ge Substrate: (100) 10x10 x 0.5 mm , SSP, N type Sb doped,R:0.1-0.5 Ohm.cm
  • Ge Substrate: (100) 10x10 x 0.5 mm , SSP, N type Sb doped,R:10-15Ohm.cm
  • Ge Substrate: (100) 10x10 x 0.5 mm , SSP, N type Sb doped,R>40 Ohm.cm
  • Ge Wafer (111) 2" dia x 0.5 mm, SSP, N type ( Sb doped), resistivities: 0.005-0.01ohm-cm
  • Ge Wafer (111) 2" dia x 0.5 mm, SSP, N type ( Sb doped), resistivities: 0.01-0.1ohm-cm
  • Ge Wafer (111) 2" dia x 0.5 mm, SSP, N type ( Sb doped), resistivities: 0.05-0.5ohm-cm
  • Ge Wafer (111) 2" dia x 0..5 mm, DSP, N type ( Sb doped), R: 0.005-0.01 ohm-cm-1
  • Ge Wafer (111) 2" dia x 0..5 mm, DSP, N type ( Sb doped), R: 0.007-0.009 ohm-cm
  • Ge Wafer (111) 2" dia x 0.5 mm, DSP, N type ( Sb doped), R: 10.5-15.2 ohm-cm
  • Ge Wafer (111) 2" dia x 0.5 mm, DSP, N type ( Sb doped), resistivities: 0.2-0.26 ohm-cm
  • Ge Wafer (100) 2" dia x 0.5 mm, DSP, N type ( Sb doped), Resistivities: 1-5 ohm-cm
  • Ge Wafer (100) 2" dia x 0.5 mm, DSP, N type ( Sb doped), R:>40 ohm-cm
  • Ge Wafer (100) 2" dia x 0.5 mm, DSP, N type ( Sb doped), resistivities: 0.01-0.1 ohm-cm
  • Ge Wafer (100) 2" dia x 0.5 mm, DSP, N type ( Sb doped), resistivities: 10-20 ohm-cm
  • Ge Wafer (100) +/- 1 degree, 2" dia x 0.5 mm, DSP, N type ( Sb doped), resistivities: 0.1-0.5 ohm-cm
  • Ge Substrate (110) 10x10x 0.5 mm, SSP, Sb-doped ,R:1-5 ohm.cm
  • Ge Substrate (110)+/- 0.7 degree 10x10x 0.5 mm, SSP, Sb-doped ,R:0.1-0.5 ohm.cm
  • Ge Wafer (111) with 9.45 degree miscut , 2" dia x 0.5 mm, SSP, N type ( Sb doped), resistivities: 0.1-0.5ohm-cm
  • Ge Wafer (100) +/- 2 degree , 2" dia x 0.5 mm, SSP, N type ( Sb doped), R:0.1-0.5 ohm.cm
  • Ge Wafer (100) +/- 3 degree , 2" dia x 0.5 mm, SSP, N type ( Sb doped), R:0.1-0.5 ohm.cm
  • Ge Wafer (100) +/- 4 degree , 2" dia x 0.5 mm, SSP, N type ( Sb doped), R:0.1-0.5 ohm.cm
  • Ge Wafer (100) 2" dia x 0.5 mm, SSP, N type ( Sb doped), R:>40 ohm-cm
  • Ge Wafer (100) 2" dia x 0.5 mm, SSP, N type ( Sb doped), resistivities:0.01-0.1 ohm-cm
  • Ge Wafer (100) 2" dia x 0.5 mm, SSP, N type ( Sb doped), resistivities:10-15 ohm-cm
  • Ge Wafer (100) 2" dia x 0.5 mm, SSP, N type ( Sb doped), resistivities:1-5 ohm-cm
  • Ge Wafer (100) with 3 degree miscut , 2" dia x 0.5 mm, SSP, N type ( Sb doped), R:0.27-0.35 ohm.cm
  • Ge Wafer (100) 2" dia x 0.5 mm, SSP, N type ( Sb doped), Resistivities: 0.001-0.01 ohm-cm
  • Ge Substrate (111) 10x10x 0.5 mm, DSP, Sb-doped . 0.005-0.01 Ohm.cm
  • Ge Substrate (111) 10x10x 0.5 mm, DSP, Sb-doped . 0.005-0.01 Ohm.cm
  • Ge Substrate: (100) 10x10 x 0.5 mm , DSP, N type Sb doped,R:0.01-0.1 Ohm.cm -1
  • Ge Substrate: (100) 5x5 x 0.5 mm , SSP, N type Sb doped,R:0.1-0.5 Ohm.cm
  • Ge Substrate: (100) 5x5 x 0.5 mm , SSP, N type Sb doped,R>40 Ohm.cm

Undoped Germanium Substrates

  • Ge Wafer (100) Undoped, 2" dia x 0.45 mm, SSP, resistivities: >50 ohm-cm
  • Ge Wafer (100) Undoped, 2" dia x 0.5 mm, SSP, resistivities: >50 ohm-cm
  • Ge Wafer (100) Undoped, 2" dia x 0.5 mm, resistivities: >50 ohm-cm, DSP
  • Ge Substrate (111) 5x5x 0.5 mm, DSP, Undoped
  • Ge Substrate (110) 5x5x 0.5 mm, SSP, Undoped
  • Ge Substrate (110) 10x5x 0.5 mm, SSP, Undoped
  • Ge Substrate (110) 10x5x 0.5 mm, DSP, Undoped
  • Ge Wafer Undoped, 1" dia x 0.5 mm, SSP (100) R:>45 Ohm.cm
  • Ge Substrate (100) 5x 5x0.5 mm, DSP, Undoped
  • Ge Wafer . Undoped, 2" dia x 0.5 mm, SSP (111) R >50 ohm.cm
  • Ge Wafer . Undoped, 2" dia x 0.5 mm, DSP (111) R >50 Ohm.cm
  • Ge Wafer (110) Undoped, 2" dia x 0.5 mm, SSP, R:>50 ohm.cm
  • Ge Wafer (110) Undoped, 2" dia x 0.5 mm, DSP,R:>50 ohm.cm
  • Ge Wafer (100) Undoped, 1" dia x 0.5 mm, DSP,R:>50 ohm.cm - GEUa25D05C2
  • Ge Wafer (110) Undoped, 1" dia x 0.5 mm, SSP,R:>50 ohm.cm
  • Ge Wafer (111) Undoped, 1" dia x 0.5 mm, SSP, R:>50 ohm.cm
  • Ge Wafer (111) Undoped, 1" dia x 0.5 mm ,DSP, R:>50 ohm.cm
  • Ge Wafer Undoped (100) 3" dia x 0.5 mm SSP resistivity: >50 ohm-cm
  • Ge Wafer Undoped (100) 3" dia x 0.5 mm DSP resistivity: >50 ohm-cm
  • Ge Wafer Undoped (110) 3" dia x 0.5 mm SSP resistivity: >50 ohm-cm
  • Ge Wafer Undoped (110) 3" dia x 0.5 mm DSP resistivity: >50 ohm-cm

  • Ge Substrate (100) 10x10x 0.35 mm, SSP, Undoped
  • Ge Substrate (100) 10x10x 0.45 mm, SSP, Undoped
  • Ge Substrate (100) 10x10x 0.5 mm, SSP, Undoped
  • Ge Substrate (100) 10x10x 0.5 mm, DSP, Undoped
  • Ge Substrate (110) 10x10x 0.5 mm, SSP, Undoped, R>50 ohm.cm5
  • Ge Substrate (110) 10x10x 0.5 mm, DSP, Undoped
  • Ge Substrate (111) 10x10x 0.45 mm, DSP, Undoped
  • Ge Substrate (111) 10x10x 0.5 mm, SSP, Undoped
  • Ge Substrate (111) 10x10x 0.5 mm, DSP, Undoped

Germanium on Insulator (GOI)

  • GOI -Ge layer with <100> with 10 degrees towards the (111) on Insulator wafer,6" dia