Germanium Electrical Grade, Boron, Gallium & Undoped

University Wafer Silicon Wafers and Semicondcutor Substrates Services
University Silicon Wafer for Production

Germanium (Ge) Wafers

Germanium wafer applications can divided into five categories.

  • semiconductors
  • photonic devices
  • semiconductor materials
  • electronic devices and electronic materials

Germanium is also used to fabricate electronic devices such as transistors when doped with g - germanium (G).

We have a large selection of Electrical and Optical Grade Germanium Single and double side polished wafers in stock and ready to ship.

Get Your Germanium Quote FAST!


Buy Germanium Wafers Online Here!

Germanium Wafer Stock

 

 

2 inch Germanium Substrate

Below are just some of the Ge wafers that we have in stock:

P-type Gallium Doped Germanium Substrates

  • Ge Substrate (111) 5 x 5 x 0.5 mm, SSP, P-type ,Ga-doped ,R: 0.005-0.01 ohm.cm
  • Ge Substrate: (100) 5x5 x 0.5 mm , SSP, P type Ga doped,R:0.0007-0.002 ohm.cm
  • Ge Substrate: (100) 5x5 x 0.5 mm , SSP, P type Ga doped,R:1-5 ohm.cm -1
  • Ge Substrate: (100) 10x5 x 0.5 mm , SSP, P type Ga doped,R:1-5 ohm.cm
  • Ge Substrate: (100) 10x5 x 0.5 mm , DSP, P type Ga doped,R:0.1-0.5 ohm.cm
  • Ge Substrate (110)+/- 0.7 degree 5x5x0.5 mm, SSP,Sb-doped ,R:0.1-0.5 ohm.cm
  • Ge Substrate (110) 10x5x 0.5 mm, SSP, Sb-doped ,R:0.1-0.5 ohm.cm
  • Ge Wafer (110) Ga-doped, 2" dia x 0.5 mm, SSP Resistivity : 0.1-0.5 ohm-cm
  • Ge Wafer (110) Ga-doped, 2" dia x 0.5 mm, SSP Resistivity : 1-10 ohm-cm
  • Ge Wafer (110) Ga-doped, 2" dia x 0.5 mm, DSP Resistivity : 0.1-0.5 ohm-cm
  • Ge Wafer (110) Ga-doped, 2" dia x 0.5 mm, DSP Resistivity : 1-5 ohm-cm
  • Ge Substrate: (100) 10x10 x 0.5 mm , DSP, P type Ga doped,R:0.1-0.5 ohm.cm
  • Ge Substrate: (100) 10x10 x 0.5 mm , DSP, P type Ga doped,R:1-5 ohm.cm-1
  • Ge Wafer (100) 2" dia x 0.5 mm, SSP, P type ( Ga doped), resistivities: 1-10 ohm-cm
  • Ge Wafer (100) 2" dia x 0.5 mm, SSP, P type ( Ga doped), resistivities: 0.1-0.5ohm-cm
  • Ge Wafer (100) 2" dia x 0.5 mm, SSP, P type ( Ga doped), resistivity: 0.001-0.005 ohm-cm
  • Ge Wafer (100) 2" dia x 0.5 mm, SSP, P type ( Ga doped), resistivity: 0.005-0.009 ohm-cm
  • Ge Wafer (100) 2" dia x 0.5 mm, SSP, P type ( Ga doped), resistivity: 0.01-0.1 ohm-cm
  • Ge Wafer (100) 2" dia x 0.5 mm, DSP, P type ( Ga doped), resistivities: 0.1-0.5ohm-cm
  • Ge Wafer (100) 2" dia x 0.5 mm, DSP, P type ( Ga doped), resistivities: 0.14-0.23 ohm-cm
  • Ge Wafer (100) 2" dia x 0.5 mm, DSP, P type ( Ga doped), resistivities: 0.23-0.24ohm-cm
  • Ge Wafer (100) 2" dia x 0.5 mm, DSP, P type ( Ga doped), resistivities: 1 - 10 ohm-cm
  • Ge Wafer (100) 2" dia x 0.5 mm, DSP, P type ( Ga doped), resistivity: 0.001-0.005 ohm-cm
  • Ge Wafer (100)+/- 2 degree , 2" dia x 0.5 mm, DSP, P type ( Ga doped), resistivities: 10-15 ohm-cm
  • Ge Wafer (111) 2" dia x 0.4 mm, DSP, P type ( Ga doped) Resistivities: 0.035-0.039ohm-cm
  • Ge Wafer (111) 2" dia x 0.5 mm, SSP, P type ( Ga doped), Resistivities: 0.022-0.026 ohm-cm
  • Ge Wafer (111) 2" dia x 0.5 mm, SSP, P type ( Ga doped), resistivities: 10-20 ohm-cm
  • Ge Wafer (111) 2" dia x 0.5 mm, SSP, P type ( Ga doped), resistivities: 1-10 ohm-cm
  • Ge Wafer (111) 2" dia x 0.5 mm, SSP, P type ( Ga doped), resistivities:0.005-0.01 ohm.cm
  • Ge Wafer (111) 2" dia x 0.5 mm, DSP, P type ( Ga doped) resistivities: 0.005-0.01ohm-cm
  • Ge Wafer (111) 2" dia x 0.5 mm, DSP, P type ( Ga doped) resistivities: 0.007-0.008ohm-cm
  • Ge Substrate: (100) 10x10 x 0.5 mm , SSP, P type Ga doped,R:0.0007-0.002ohm.cm-1
  • Ge Substrate: (100) 10x10 x 0.5 mm , SSP, P type Ga doped,R:0.001-0.005 ohm.cm
  • Ge Substrate: (100) 10x10 x 0.5 mm , SSP, P type Ga doped,R:1-5 ohm.cm
  • Ge Wafer (100) 2" dia x 0.4 mm, DSP, P type ( Ga doped), resistivities: 0.1ohm-cm
  • Ge Substrate (111) 10x10x 0.5 mm, SSP, P-type ,Ga-doped ,R: 0.005-0.01 ohm.cm
  • Ge Substrate: (100)+/- 2 degree, 10x10 x 0.5 mm , DSP, P type Ga doped,R:10-15 ohm.cm

N-type Antimony Doped Germanium Substrates

  • Ge Wafer (100) 2" dia x 0.5 mm, SSP, N type ( Sb doped), resistivity:2.5-2.7ohm-cm
  • Ge Substrate (111) 10x5x 0.5 mm, DSP, Sb-doped . 0.005-0.01 Ohm.cm
  • Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, SSP Resistivity: 0.82-0.98ohm.cm
  • Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, SSP Resistivity: 1-5ohm.cm
  • Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, DSP Resistivity: 0.1-0.5ohm.cm
  • Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, DSP Resistivity: 1-5ohm.cm
  • Ge Substrate: (100) 10x10 x 0.5 mm , SSP, N type Sb doped,R:0.1-0.5 Ohm.cm
  • Ge Substrate: (100) 10x10 x 0.5 mm , SSP, N type Sb doped,R:10-15Ohm.cm
  • Ge Substrate: (100) 10x10 x 0.5 mm , SSP, N type Sb doped,R>40 Ohm.cm
  • Ge Wafer (111) 2" dia x 0.5 mm, SSP, N type ( Sb doped), resistivities: 0.005-0.01ohm-cm
  • Ge Wafer (111) 2" dia x 0.5 mm, SSP, N type ( Sb doped), resistivities: 0.01-0.1ohm-cm
  • Ge Wafer (111) 2" dia x 0.5 mm, SSP, N type ( Sb doped), resistivities: 0.05-0.5ohm-cm
  • Ge Wafer (111) 2" dia x 0..5 mm, DSP, N type ( Sb doped), R: 0.005-0.01 ohm-cm-1
  • Ge Wafer (111) 2" dia x 0..5 mm, DSP, N type ( Sb doped), R: 0.007-0.009 ohm-cm
  • Ge Wafer (111) 2" dia x 0.5 mm, DSP, N type ( Sb doped), R: 10.5-15.2 ohm-cm
  • Ge Wafer (111) 2" dia x 0.5 mm, DSP, N type ( Sb doped), resistivities: 0.2-0.26 ohm-cm
  • Ge Wafer (100) 2" dia x 0.5 mm, DSP, N type ( Sb doped), Resistivities: 1-5 ohm-cm
  • Ge Wafer (100) 2" dia x 0.5 mm, DSP, N type ( Sb doped), R:>40 ohm-cm
  • Ge Wafer (100) 2" dia x 0.5 mm, DSP, N type ( Sb doped), resistivities: 0.01-0.1 ohm-cm
  • Ge Wafer (100) 2" dia x 0.5 mm, DSP, N type ( Sb doped), resistivities: 10-20 ohm-cm
  • Ge Wafer (100) +/- 1 degree, 2" dia x 0.5 mm, DSP, N type ( Sb doped), resistivities: 0.1-0.5 ohm-cm
  • Ge Substrate (110) 10x10x 0.5 mm, SSP, Sb-doped ,R:1-5 ohm.cm
  • Ge Substrate (110)+/- 0.7 degree 10x10x 0.5 mm, SSP, Sb-doped ,R:0.1-0.5 ohm.cm
  • Ge Wafer (111) with 9.45 degree miscut , 2" dia x 0.5 mm, SSP, N type ( Sb doped), resistivities: 0.1-0.5ohm-cm
  • Ge Wafer (100) +/- 2 degree , 2" dia x 0.5 mm, SSP, N type ( Sb doped), R:0.1-0.5 ohm.cm
  • Ge Wafer (100) +/- 3 degree , 2" dia x 0.5 mm, SSP, N type ( Sb doped), R:0.1-0.5 ohm.cm
  • Ge Wafer (100) +/- 4 degree , 2" dia x 0.5 mm, SSP, N type ( Sb doped), R:0.1-0.5 ohm.cm
  • Ge Wafer (100) 2" dia x 0.5 mm, SSP, N type ( Sb doped), R:>40 ohm-cm
  • Ge Wafer (100) 2" dia x 0.5 mm, SSP, N type ( Sb doped), resistivities:0.01-0.1 ohm-cm
  • Ge Wafer (100) 2" dia x 0.5 mm, SSP, N type ( Sb doped), resistivities:10-15 ohm-cm
  • Ge Wafer (100) 2" dia x 0.5 mm, SSP, N type ( Sb doped), resistivities:1-5 ohm-cm
  • Ge Wafer (100) with 3 degree miscut , 2" dia x 0.5 mm, SSP, N type ( Sb doped), R:0.27-0.35 ohm.cm
  • Ge Wafer (100) 2" dia x 0.5 mm, SSP, N type ( Sb doped), Resistivities: 0.001-0.01 ohm-cm
  • Ge Substrate (111) 10x10x 0.5 mm, DSP, Sb-doped . 0.005-0.01 Ohm.cm
  • Ge Substrate (111) 10x10x 0.5 mm, DSP, Sb-doped . 0.005-0.01 Ohm.cm
  • Ge Substrate: (100) 10x10 x 0.5 mm , DSP, N type Sb doped,R:0.01-0.1 Ohm.cm -1
  • Ge Substrate: (100) 5x5 x 0.5 mm , SSP, N type Sb doped,R:0.1-0.5 Ohm.cm
  • Ge Substrate: (100) 5x5 x 0.5 mm , SSP, N type Sb doped,R>40 Ohm.cm

Undoped Germanium Substrates

  • Ge Wafer (100) Undoped, 2" dia x 0.45 mm, SSP, resistivities: >50 ohm-cm
  • Ge Wafer (100) Undoped, 2" dia x 0.5 mm, SSP, resistivities: >50 ohm-cm
  • Ge Wafer (100) Undoped, 2" dia x 0.5 mm, resistivities: >50 ohm-cm, DSP
  • Ge Substrate (111) 5x5x 0.5 mm, DSP, Undoped
  • Ge Substrate (110) 5x5x 0.5 mm, SSP, Undoped
  • Ge Substrate (110) 10x5x 0.5 mm, SSP, Undoped
  • Ge Substrate (110) 10x5x 0.5 mm, DSP, Undoped
  • Ge Wafer Undoped, 1" dia x 0.5 mm, SSP (100) R:>45 Ohm.cm
  • Ge Substrate (100) 5x 5x0.5 mm, DSP, Undoped
  • Ge Wafer . Undoped, 2" dia x 0.5 mm, SSP (111) R >50 ohm.cm
  • Ge Wafer . Undoped, 2" dia x 0.5 mm, DSP (111) R >50 Ohm.cm
  • Ge Wafer (110) Undoped, 2" dia x 0.5 mm, SSP, R:>50 ohm.cm
  • Ge Wafer (110) Undoped, 2" dia x 0.5 mm, DSP,R:>50 ohm.cm
  • Ge Wafer (100) Undoped, 1" dia x 0.5 mm, DSP,R:>50 ohm.cm - GEUa25D05C2
  • Ge Wafer (110) Undoped, 1" dia x 0.5 mm, SSP,R:>50 ohm.cm
  • Ge Wafer (111) Undoped, 1" dia x 0.5 mm, SSP, R:>50 ohm.cm
  • Ge Wafer (111) Undoped, 1" dia x 0.5 mm ,DSP, R:>50 ohm.cm
  • Ge Wafer Undoped (100) 3" dia x 0.5 mm SSP resistivity: >50 ohm-cm
  • Ge Wafer Undoped (100) 3" dia x 0.5 mm DSP resistivity: >50 ohm-cm
  • Ge Wafer Undoped (110) 3" dia x 0.5 mm SSP resistivity: >50 ohm-cm
  • Ge Wafer Undoped (110) 3" dia x 0.5 mm DSP resistivity: >50 ohm-cm

  • Ge Substrate (100) 10x10x 0.35 mm, SSP, Undoped
  • Ge Substrate (100) 10x10x 0.45 mm, SSP, Undoped
  • Ge Substrate (100) 10x10x 0.5 mm, SSP, Undoped
  • Ge Substrate (100) 10x10x 0.5 mm, DSP, Undoped
  • Ge Substrate (110) 10x10x 0.5 mm, SSP, Undoped, R>50 ohm.cm5
  • Ge Substrate (110) 10x10x 0.5 mm, DSP, Undoped
  • Ge Substrate (111) 10x10x 0.45 mm, DSP, Undoped
  • Ge Substrate (111) 10x10x 0.5 mm, SSP, Undoped
  • Ge Substrate (111) 10x10x 0.5 mm, DSP, Undoped

Germanium on Insulator (GOI)

  • GOI -Ge layer with <100> with 10 degrees towards the (111) on Insulator wafer,6" dia