Zinc Selenide Substrates (ZnSe) Wafers

university wafer substrates

What ZnSe Wafers

A researcher from a US university requested a quote for the following:

I’m looking for zinc selenide wafers, ideally 1-2 inches wide. Double sided polished and good roughness quality. Do you have them available?

Please reference #264565 for pricing.

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Is JGS1 Fused Silica Used For Spectroscopy?

A systems and process engineer requested the following quote:

We do spectroscopy work here. Would  JGS1 fused silica work? We had problems with other types of fused silica and glass materials. We'd be interested in getting a relative comparison.   Can we order qty 2 pieces of JGS1 along with qty 5 of Corning glass so that we can get a direct and conclusive comparison?

Reference #224650 for specs and pricing.

Key Zinc Selenide (ZnSe) Terms

Below are just some important keywords associated with ZnSe wafers.

  • reflective applications
  • femtosecond laser
  • luminescent properties
  • crystallinity films
  • glass substrates
  • ray luminescence
  • semiconductor zinc
  • zinc electrode
  • zinc selenide
  • znse crystals
  • refracting lenses
  • infrared lasers
  • diffractive structures
  • infrared mediums
  • infrared wavelengths



Zinc Selenide Substrates and Their Applications

Having good substrates will be the key to the success of your project. Zinc selenide substrates are a great choice because of their flexibility and durability. They are used in a wide variety of applications and are suited to most electronics applications. They offer a smooth surface that is excellent for electronic applications. They can be used for electronics such as microprocessors, memory chips, and circuit boards. They are also easy to work with and are resistant to wear and tear. They are a great choice for anyone who is interested in making high-quality electronics.

zinc selenide substrate wavelength

High temperature pre-treatment

Optical elements made of Zinc Selenide (ZnSe) are used in a wide range of optical applications including mid-infrared laser systems. They have high mechanical strength and high thermal conductivity. They are made from doped II-VI crystals. Zinc selenide is usually preferred for dual or triple beam optic applications. The optical element has a polycrystalline structure which allows for lower production cost. Zinc selenide has been reported to exhibit red luminescence when induced by visible light. This luminescence is believed to be caused by radiative recombination of free electrons with holes.

Zinc selenide has a high degree of resistance to chemical reactions. In addition to optical applications, ZnSe is used in acousto-optical modulators and in transmission optics for CO2 lasers. Zinc selenide optical elements are made by processing the material at various temperature levels.

In high temperature pre-treatment, ZnSe substrates are heated at various temperatures to reorganize surface molecules and to remove organic residues from polishing solutions. The process creates a new surface composition and durable oxide thin film coatings on Zinc Selenide substrates.

Several techniques are used for analyzing the quality of the treated material. The quality of the material is influenced by the flow rate of gaseous materials and the amount of impurities present in the material. The impurities present in the material do not influence the spectral characteristics of the material. The spectral output of the substrate is nominally single frequency, with linewidth less than about 140 pm. The material is mainly characterized by high transparency between 0.5 and 14.0 mm.

The degree of optical damage is mainly determined by the processing techniques. The degree of optical damage is less for the samples that have been processed by the ZnSe annealing process and is high for the samples that have been processed by other processes. In order to determine the effect of the different processing techniques on the optical damage, a statistical analysis was conducted.

The amount of LIDT of Fe2+:ZnSe_Ar decreased as the PRR increased at a constant exposure time. The highest LIDT was observed in the ZnSe samples that have been annealed in an argon atmosphere.

Electrochemical deposition

Several studies have been conducted on the deposition of zinc selenide thin films. These studies involved the use of an aqueous electrolytic bath to grow the films on conducting glass substrates. The films were examined for their structural, optical, and photoelectric properties. The extinction coefficient of the films was measured and plotted against wavelength. It was found that the lowest value was 0.26 at 360 nm. It is important to note that the extinction coefficient increases with increasing wavelength.

It was also found that a p-type ZnSe film could be deposited on an n-type ZnSe singlecrystal cathode. However, researchers found that this deposition method could not produce the pn-junction.

The electrodeposition process was found to be a simple and convenient way to deposit a uniform layer of metals. A three-electrode setup was used, consisting of a working electrode, a counter electrode, and a reference electrode. A digital multimeter was used to measure the current. The voltmeter was then used to measure the voltage applied to the cathode and the anode.

Zinc selenide is an important II-VI chalcogenide compound semiconductor. It has a wide band gap of 2.7 eV at room temperature. It has good electronic transport properties and high refractive indices. In addition, it is a good candidate for solar energy cells. ZnSe has a high exciton binding energy of 21 meV.

Research on ZnSe synthesis is gaining attention due to its enhanced properties. The band gap can be controlled by controlling the particle size. ZnSe has a high optical transparency across a wide range of wavelengths. Researchers also attempted to apply this material in a photodector. However, they did not understand how the acceptors could be present in ZnSe.

Electrochemical deposition of ZnSe thin films is a promising technique for the production of uniform thin films. The deposition process has been investigated for its effect on the growth of the metals and the structures of the deposited thin films. It has been found that the deposition time had an effect on the growth of the ZnSe thin films. It is also noted that the extinction coefficient of the film increased with increasing wavelength.

Praseodymium fluoride thin films

Optical properties of praseodymium fluoride thin films on zinc selenide substrates have been studied. They were measured by Lorentz oscillator model. Also, they were investigated by x-ray photoemission spectroscopy and infrared transmission spectroscopy. In addition, atomic force microscopy was used to study the morphology of the thin film. In addition, nanostructures were observed.

The praseodymium fluoride films are covered by a network of fine cracks. These cracks are caused by a high intrinsic tensile stress. This stress induces delamination of layers and substrate distortion. It can also cause optical performance failure.

Zinc selenide is a high refractive index material. It has a refractive index of 2.403 when it is illuminated with infrared laser light. It can also be used as an antireflective film material. It is also known as cryolite. It is obtained by a chemical reaction.

Barium fluoride is an inorganic compound that has a melting point of 1368@C. Barium fluoride is used to detect high energy gamma rays, neutrons and X-rays. It is also used in positron emission tomography. Barium fluoride is also used to generate ultra-narrow lasers. In addition, barium fluoride is used in the windows of infrared spectroscopy. Its wide band gap insulating properties and high resistance to high energy radiation make it suitable for space applications.

In addition, barium fluoride is transparent in electromagnetic regions. In addition, it has a fast oscillation when it is hit by high energy radiation. Therefore, it can be used to detect high energy radiation. In addition, barium fluoride sputtering on a solid substrate is an efficient method for depositing ultra-pure BaF2 thin layers of around 20nm. This method is used to improve the quality of devices. In addition, it also improves the resistance to high energy radiation.

Barium fluoride sputtering can improve the quality of devices. It can be used for positron emission tomography and gamma-ray detection. In addition, barium fluoride has wide band gap insulating properties and high quality. In addition, it has a non-linear orientation in the gas phase.

Anti-reflective coating 38

Several different anti-reflective coatings can be deposited on zinc selenide substrates. The optical quality of these coatings is very high, and can improve the efficiency of an optic. For example, an anti-reflective coating can help cell phones and hand-held barcode scanners work more effectively outdoors. It can also be used in conjunction with an anti-glare solution, which minimizes the amount of reflection that occurs.

Zinc selenide is a material that can be used in a variety of infrared optics. The material can absorb sunlight and emit fluorescence at longer wavelengths. It is also durable and can be used in high-power laser applications. However, the material has a relatively poor stress match and absorption coefficient.

To improve the performance of an optic, it is possible to use an anti-reflective coating on both the top and bottom surfaces of a zinc selenide substrate. The coating can be made by alternating the refraction of materials, forming a two or more layers film structure.

Anti-reflective coatings can be characterized by a soft blue/green hue when deposited. They can be used to minimize the amount of reflection that occurs from all wavelengths. They are ideal for applications with high visible light transmission, such as in front of an air gap, or where external light is not required.

Zinc selenide substrates are made by combining ZnSe with hydrogen selenide gas in a physico-chemical process. In the process, small finite amounts of chlorine are added to the zinc selenide material. The resulting material is crystalline, with a high optical quality, good fluorescence, and mechanical stability. The material can be deposited using a template or spin coating process.

An anti-reflective coating can be used in conjunction with an anti-glare coating to minimize the amount of reflection that occurs from the top and bottom surfaces of a zinc-selenide substrate. This can help improve the efficiency of an optic, as well as eliminate ghost images. They are also ideal for applications with a small air gap, or where external light is not needed.