Gallium Nitride, otherwise known by its chemical symbols as GaN, is a the ideal substance for radio energy amplification, which can work to enhance devices like radars and jammers. In past years, silicon was the substrate of choice for power electronics, but due to advancements in research, GaN has superseded silicon. The reason for this change is that GaN is considered a wide-bandgap material. This means that it has a high breakdown voltage and excellent efficiency when performing at high temperatures. If you need a UniversityWafer, Inc. product that will provide you with high quality and reliable results we suggest using our Gallium Nitride substrates.
GaN is a binary III/V direct bandgap semiconductor commonly used in bright light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in:
For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling. Its sensitivity to ionizing radiation is low (like other group III nitrides), making it a suitable material for solar cell arrays for satellites. Military and space applications could also benefit as devices have shown stability in radiation environments.
Gallium Nitride transistors can operate at much hotter temperatures and work at much higher voltages than gallium arsenide (GaAs) transistors, they make ideal power amplifiers at microwave frequencies.
Recently a reseachers asked about the following GaN spec:
I am interested primarily in this:
2" bulk GaN wafer, Thickness is 350um .N-type(un-doped),A level
Can you give me more details on the technical synthesis of the material, dislocations rate, the value of the residual doping, the surface polarity, the number of macro-defects?
2" bulk GaN wafer, Thickness is 350um .N-type(un-doped),A level
4" GaN template, Thickness is 4um,N-type(un-doped)
Non-Polar Freestanding GaNSubstrates (A-plane), Thickness is 350um,5mmx10mm
2" AlN wafer on Sapphire
2" GaN wafer on Sapphire(Undoped),thickness is 4um
2" GaN wafer on sapphire (Si-doped), thickness is 4um
2" GaN wafer on sapphire (Mg-doped), thickness is 4um
HEMT stucture on Si substrate,2inch
HEMT stucture on SiC substrate, 2inch
2 " Gallium Nitride Blue orGreen LED wafer
The specifications ,please see the attached .
New IC are on the market. The gallium nitride (GaN) devices support display and appliance power supply applications that don't require a heatsink for continuous power of up to 75 Watts
Scientists were looking to build a research program around Gallium Nitride nanophotonics. They were interested in GaN on sapphire with a thickness of 100 and 150nm.
UniversityWafer, Inc. Quoted:GaN nanophotonics,the materials for nano photonics, 4'' Un-doped Gallium Nitride on SSP sapphire with a thickness of 100 and 150nm,Qty. 15pcs
Gallim Nitride (GaN) radio frequency power is five times more powerful than last generations material including silicon. New GaN technological gains should result in much lighter, smaller and powerful electronic devices.
Below are just some of the GaN on Sapphire specs that we have. Please email us the specs and quantity that you need quoted.
GaN epitaxial wafers consist of GaN layer on 6H-SiC substrate. 50 mm diam on axis, n-type, GaN thickness ~0.5 um
GaN layer on sapphire, 50mm diameter on-axis, n-type, GaN thickness 0.5-10 um.
GaN/AIN/SiC epitaxial wafer consisting of GaN layer on AIN layer on 6H silicon carbide.
50mm in diameter on-axis, n-type.
GaN thickness ~(0.5-0.8) um.
AIN thickness ~0.1um.
GaN/AIN/AI2O3 epitaxial wafer consists of GaN layer on AIN layer on sapphire.
50mm in diameter, on-axis, n-type, GaN thickness ~(0.5-0.8) um, AIN thickness ~0.1 um.
|Item||Dia||Typ/Dop||Ori||GaN (μm)||Al203 (μm)||Al2O3 Plane||Pol||Other Specs|
|2857||50.8mm||P/Mg||<0001>||4-5||430||c||DSP||Useable surface area: > 90%, TTV: = 10um, BOW: = 10um, Warp: = 10um|
Above is a Single Side Polished GaN Wafer with single wafer carrier.
Ask us about strained heteroepitaxial growth and epitaxial overgrowth!
Gallium Nitride, otherwise known by its chemical symbols as GaN, is a the ideal substance for radio energy amplification, which can work to enhance devices like radars and jammers. In past years, silicon was the substrate of choice for power electronics, but due to advancements in research, GaN has superseded silicon. The reason for this change is that GaN is considered a wide-bandgap material. This means that it has a high breakdown voltage and excellent efficiency when performing at high temperatures. If you need a UniversityWafer product that will provide you with high quality and reliable results we suggest using our Gallium Nitride substrates.
A thin layer of GaN is used on LED lights to pass an electric current which causes the bulb to light
GaN’s high power density is used to produce sound quality in class-D sound amplifiers
GaN boosts amplification of microwave signals in radar with higher voltage than silicon
If you are considering purchasing a UniversityWafer GaN product, please review the list of possible applications below.
Gallium nitride has a lower electrical resistance and only loses a small amount of power. In addition, its low power consumption and low energy consumption allows the use of high-speed, low-power and high-frequency photonics in devices that operate on the basis of gan. GaN-based photonic technologies can be used every day for a wide range of biotechnological and scientific applications, including biomedical, medical, industrial, energy, optical, telecommunications, communications and energy storage applications.
GaN-based compound semiconductors have expanded their THz spectrum to ultraviolet and visible wavelengths with the continuous development of the material and devices, and have extended it to the THZ spectrum for the first time. According to the group, this progress opens up possibilities that can now be combined with macroscopic quantum effects of superconductors. The breakthrough will usher in a new era of optical compounds in silicon photonics and accelerate the development of sitoelectronic integration. OSRAM Opto - Semiconductor, which offers lighting, visualization and sensor technologies.
Fabricating electronic devices from Gallium Nitride instead of silicon, power consumption can be significantly reduced by emitting light into the ultraviolet range, which has shorter wavelengths. Researchers have succeeded in developing semiconductor compound semiconductor technology by using copper iodide semiconductors (CuI) made of copper, Cu and iodine (I), thereby ensuring a device technology that can emit blue light with high efficiency. By focusing on this point, they developed a new technology combining a combination of lead and copper-ionite compounds (lead-copper-iodine-I) to successfully emit blue light. This results in a much more efficient and energy-efficient electronic device with higher efficiency and higher performance.
Gallium nitride is likely to be a key material for improving the efficiency of emerging 5G technology. In particular, light-emitting semiconductors, which are replaced by gallianite, are expected to play an important role in the development of high-performance, cost-effective and high-performance electronics.
GaN semiconductors have shown in recent years that they are well suited for a wide range of applications, not only in electronics, but also in medical devices. Gallium nitride is currently widely used in real life radar designs, and it seems that its use is now also being used in tactical radios.