6 Inch Silicon Wafers for Research and Production in Stock

University Wafer Silicon Wafers and Semicondcutor Substrates Services
University Silicon Wafer for Production

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Below Are Just Some of the 6 Inch Silicon Wafers that We Carry

We have a large selection of standard and hard to find specs in stock. We work with the researcher to provide the best specs for their research. Fast delivery is a must and we carry in inventory the following. If you don't see what you need, just let us know!

Wafer Dopings:

  • Undoped
  • Boron (B)
  • Gallium (Ga)
  • Arsenic (As)
  • Antimony (Sb)
  • Degenerately Doped

Wafer Types

Wafer Orientations

  • (100)
  • (111)
  • (110)
  • (112)
  • (531)
  • (311)
  • (211)

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6 inch silicon wafers in cassette

Large Selection of 6 Inch Silicon Wafers In stock

You can buy as few as one wafer or large volumes. We cater to the researcher who needs a high-quality, but affordable substrate to experiment on.

Where Can You Buy 6 Inch Silicon Wafers Online?

Here are just some of the ongoing sales.

Item Qty/Stck Material Orient. Diam. Thck (μm) Pol Resistivity Ohm-cm Comment
TS006 38 p-type Si:B [100] 6" 525 ±15 P/E MCZ 0.01--0.02 {0.015--0.017} SEMI Prime, 1 SEMI Flat 57.5mm @ <011>±0.5°, Non--standard Edge profile, Oxygen=(11--13)ppma, Carbon<1ppma, Empak cst
TS004 84 p-type Si:B [100] 6" 675 ±15 P/E MCZ 0.01--0.02 {0.013--0.017} SEMI Prime, 1 SEMI Flat 57.5mm @ <011>±0.5°, Oxygen=(3--9)ppma, Carbon<1ppma, Back--side: Acid etch, Empak cst
TS005 47 p-type Si:B [100] 6" 675 ±15 P/E MCZ 0.01--0.02 {0.013--0.016} SEMI Prime, 1Flat 57.5mm @ <001>±0.5° {not @ <011>}, Oxygen=(3--9)ppma, Carbon<1ppma, Back--side: Acid etch, Empak cst
K667 2 p-type Si:B [100] 6" 900 C/C FZ >1,000 SEMI Prime, 1Flat (57.5mm), Empak cst
7038 13 p-type Si:B [111] ±0.5° 6" 875 P/E FZ >10,000 SEMI notch Prime, Empak cst, Lifetime>1,000μs
6898 10 p-type Si:B [111] ±0.5° 6" 1,000 P/E FZ >5,000 SEMI Prime, 1Flat (57.5mm), Empak cst
7208 25 n-type Si:P [100] ±1° 6" 1,000 ±50 P/P FZ >9,500 SEMI Prime, 1Flat (57.5mm), Empak cst, Lifetime>6,000μs
E239 1 n-type Si:P [100] 6" 825 C/C FZ 7,000--8,000 {7,025--7,856} SEMI, 1Flat, Lifetime=7,562μs, in Open Empak cst
F907 3 n-type Si:P [100] 6" 3,000 P/P FZ >4,800 SEMI Prime, 1Flat (57.5mm), Individual cst, Lifetime>7,000μs.
7212 25 n-type Si:P [100] ±1° 6" 450 P/P FZ 4,300--8,300 SEMI Prime, 1Flat (57.5mm), Empak cst
7233 25 n-type Si:P [100] ±1° 6" 675 P/P FZ 4,300--8,300 SEMI Prime, 1Flat (57.5mm), Empak cst
L625 3 n-type Si:P [100--6° towards[111]] ±0.5° 6" 625 P/E FZ >3,500 SEMI Prime, 1Flat (57.5mm), Empak cst
E700 10 n-type Si:P [100--6° towards[111]] ±0.5° 6" 675 P/P FZ >3,500 SEMI Prime, 1Flat (57.5mm), Empak cst
F700 5 n-type Si:P [100--6° towards[111]] ±0.5° 6" 790 ±10 C/C FZ >3,500 SEMI, 1Flat, Empak cst
4982 19 n-type Si:P [100--6° towards[111]] ±0.5° 6" 675 P/P FZ >1,000 SEMI Prime, Notch on <010> {not on <011>}, Laser Mark, Empak cst
D982 1 n-type Si:P [100--6° towards[111]] ±0.5° 6" 675 BROKEN FZ >1,000 SEMI notch Broken -- one piece ~50% of wafers other pieces ~20% of wafer, Empak cst
7122 2 n-type Si:P [100] 6" 500 ±10 P/P FZ 50--70 SEMI Prime, 1Flat, Empak cst
G122 50 n-type Si:P [100] 6" 500 ±10 P/P FZ 50--70 SEMI Prime, 1Flat, Empak cst
5325 5 n-type Si:P [100] 6" 725 P/P FZ 50--70 {57--62} SEMI Prime, 1Flat (57.5mm), Lifetime=15,700μs, Empak cst
7053 16 n-type Si:P [100] 6" 2,000 P/P FZ 50--70 SEMI Prime, 1Flat (57.5mm), Cassettes of 10 + 6 wafers
6883 13 n-type Si:P [100] 6" 625 ±5 P/P FZ 40--90 SEMI Prime, 1Flat (57.5mm), TTV<3μm,, Empak cst
G883 6 n-type Si:P [100] 6" 650 ±5 P/P FZ 40--90 SEMI Prime, 1Flat (57.5mm), TTV<3μm,, Empak cst
F883 10 n-type Si:P [100] 6" 675 ±5 P/P FZ 40--90 SEMI Prime, 1Flat (57.5mm), TTV<3μm,, Empak cst
S5622 14 n-type Si:P [100] 6" 1,300 ±10 E/E FZ 0.01--0.05 SEMI notch, Empak cst
G228 3 n-type Si:P [111] ±0.5° 6" 300 ±15 BROKEN FZ >6,000 Test,Broken into a dozen large pieces ranging from 65% of wafer to 5% and small pieces as well
N445 7 n-type Si:P [112--5.0° towards[11--1]] ±0.5° 6" 875 ±10 E/E FZ >3,000 SEMI, 1Flat (47.5mm), TTV<4μm, Surface Chips
G343 25 n-type Si:P [112--5° towards[11--1]] ±0.5° 6" 1,000 ±10 C/C FZ >3,000 SEMI, 1 JEIDA Flat (47.5mm), Empak cst, TTV<4μm, Lifetime>1,000μs
7116 1 Intrinsic Si:- [100] 6" 675 P/P FZ >65,000 SEMI notch Prime, Empak cst
M526 3 Intrinsic Si:- [100] ±0.1° 6" 720 ±10 P/P FZ >10,000 SEMI Prime, 1Flat (57.5mm), TTV<3μm, Empak cst
7117 7 Intrinsic Si:- [111] ±0.5° 6" 875 P/P FZ >10,000 SEMI Prime, 1Flat (57.5mm), Empak cst
F613 2 p-type Si:B [110] ±0.5° 6" 300 P/P 20--25 SEMI TEST -- scratched, can be repolished & thinned for extra fee, 2Flats, in unsealed Empak cst
G458 5 p-type Si:B [110] ±0.5° 6" 390 ±10 C/C >10 2Flats, Empak cst
TS002 195 p-type Si:B [110] ±0.25° 6" 625 ±15 P/E 10--20 {11--15} SEMI Prime, 1 JEIDA Flat (47.5mm) @ <111>, TTV<3μm, Bow<5μm, Warp<10μm, hard cst
TS007 39 p-type Si:B [110] ±0.25° 6" 625 ±15 P/E 10--20 {13.6--13.9} SEMI Prime, 1 JEIDA Flat 47.5mm @ <111>±0.5°, LaserMark, TTV<2μm, Warp<10μm, Empak cst
TS072 138 p-type Si:B [110] ±0.25° 6" 625 ±15 P/E 10--20 SEMI Prime, 1 JEIDA Flat (47.5mm) @ <111>±0.5°, Laser Mark, TTV<3μm, Bow<5μm, Warp<10μm, Empak cst
6427 25 p-type Si:B [110] ±0.5° 6" 675 P/E 0.01--0.02 Prime, PFlat @ [111]±0.25°, SF @ [111]±5° 109.5° CW from PF, Empak cst
TS054 148 p-type Si:B [100] 6" 675 P/E 15--25 {16.1--21.7} SEMI Prime, 1Flat (57.5mm), Empak cst, TTV<5μm
4980 7 p-type Si:B [100] 6" 220 P/P 10--30 SEMI 1Flat (57.5mm), TEST grade (surface scratches & digs), TTV<4μm, Unsealed in Empak cst
L405 4 p-type Si:B [100] 6" 1,000 P/P 10--15 SEMI Prime, 1Flat (57.5mm), Empak cst, 4 Prime wafers plus 2 scratched wafers at no cost
7066 159 p-type Si:B [100] 6" 675 P/P 5--10 SEMI Prime, 1Flat (57.5mm), Empak cst
6287 20 p-type Si:B [100] 6" 675 P/E 5--10 SEMI Prime, 1Flat (57.5mm), Empak cst
6751 25 p-type Si:B [100] 6" 1,000 P/E 5--10 SEMI Prime, 1Flat (57.5mm), Empak cst
7030 100 p-type Si:B [100] 6" 1,000 P/E 5--10 SEMI Prime, 1Flat (57.5mm), Empak cst
E964 5 p-type Si:B [100] 6" 475 P/P 1--30 SEMI Prime, 1Flat (57.5mm), Empak cst
5964 50 p-type Si:B [100] 6" 500 P/P 1--30 SEMI Prime, 1Flat (57.5mm), Empak cst, TTV<5μm
D964 2 p-type Si:B [100] 6" 500 P/P 1--30 SEMI Prime, 1Flat (57.5mm), Empak cst, TTV<5μm
5354 6 p-type Si:B [100--9.7° towards[001]] ±0.1° 6" 525 P/P 1--100 SEMI Prime, 1Flat (57.5mm) at <110>±0.1°, Empak cst
B420 5 p-type Si:B [100] 6" 675 P/P 1--5 SEMI Prime, 1Flat, Soft cst
6358 25 p-type Si:B [100--6° towards[111]] ±0.5° 6" 675 P/E 1--30 SEMI Prime, 1Flat (57.5mm), Empak cst
N698 12 p-type Si:B [100] 6" 675 P/E 1--100 SEMI Prime, 1Flat (57.5mm), Empak cst
6404 25 p-type Si:B [100] 6" 800 E/E 1--50 SEMI, 1Flat (57.5mm), Empak cst, TTV<5μm
F162 6 p-type Si:B [100] 6" 2,000 ±50 P/P 1--35 SEMI Prime, 1Flat (57.5mm), Individual cst, Group of 6 wafers
E162 2 p-type Si:B [100] 6" 2,000 ±50 P/E 1--35 SEMI Prime, 1Flat (57.5mm), Group of 2 wafers, Back--Side polished with small scratches
7047 4 p-type Si:B [100] 6" 400 P/P 0.5--1.0 SEMI Prime, 1Flat (57.5mm), Empak cst
S5821 10 p-type Si:B [100] 6" 275 P/P 0.01--0.05 SEMI Prime, 1Flat (57.5mm), TTV<2μm, Empak cst
TS104 22 p-type Si:B [100] 6" 625 ±15 P/EOx 0.01--0.02 {0.0139--0.0144} SEMI Prime, JEIDA Flat 47.5mm, Back--side LTO (0.3--0.4)μm, TTV<6μm, Empak cst
TS055 75 p-type Si:B [100] 6" 675 ±15 P/E 0.01--0.02 {0.0102--0.0133} SEMI Prime, 1Flat (57.5mm), Empak cst
TS103 9 p-type Si:B [100] 6" 525 ±15 P/E 0.007--0.015 {0.0126--0.0134} SEMI Prime, 1Flat (57.5mm), TTV<5μm, Empak cst
6005 3 p-type Si:B [100] 6" 320 P/E 0.001--0.030 JEIDA Prime, Empak cst
6484 75 p-type Si:B [100] 6" 675 P/E 0.001--0.005 SEMI Prime, 1Flat (57.5mm), Empak cst
TS108 269 p-type Si:B [111--3°] ±0.5° 6" 625 ±15 P/E 0.01--0.02 SEMI Prime, 1Flat (57.5mm), TTV<8μm, Empak cst
J668 66 p-type Si:B [111] ±0.5° 6" 675 E/E 0.010--0.025 SEMI, 1Flat (57.5mm), Empak cst, TTV<5μm
TS105 2 p-type Si:B [111--1.5°] ±0.35° 6" 675 P/EOx 0.001--0.002 {0.0017--0.0018} SEMI Prime, 1Flat (57.5mm), Back--side LTO 400±40nm, TTV<6μm, Empak cst
5814 202 n-type Si:P [100] 6" 925 ±15 E/E 5--35 {12.5--29.7} JEIDA Prime, Empak cst, TTV<5μm
B728 7 n-type Si:P [100] 6" 675 P/E 2.7--4.0 SEMI Prime, Empak cst
TS063 140 n-type Si:P [100] 6" 525 P/E 1--3 {1.1--1.5} SEMI Prime, 1Flat (57.5mm), Empak cst
TS075 26 n-type Si:P [100] 6" 525 P/E 1--3 {1.5--2.0} SEMI Prime, Flat: JEIDA 47.5mm, Oxygen=(10--14)ppma, Carbon<1ppma, Empak cst (14 + 12 wafers)
TS076 49 n-type Si:P [100] 6" 525 P/E 1--3 {1.1--2.3} SEMI Prime, Flat: JEIDA 47.5mm, Oxygen=(10--14)ppma, Carbon<1ppma, Empak cst (8+24+25 wafers)
6971 5 n-type Si:P [100--25° towards[110]] ±1° 6" 675 P/P 1--100 SEMI notch Prime, Empak cst, TTV<1μm
6965 50 n-type Si:P [100] 6" 675 ±10 P/E 1--10 {4.34--5.36} SEMI Prime, 1Flat (57.5mm), Empak cst
7170 200 n-type Si:P [100] ±1° 6" 675 P/E 1--20 {1.8--12.0} Prime, 2 SEMI Flats, Back--side Acid etched, Empak cst
C716 7 n-type Si:P [100--28° towards[110]] ±1° 6" 700 P/P 1--100 SEMI Notch Prime, TTV<2μm, Empak cst
S5913 1 n-type Si:P [100] ±1° 6" 800 P/E 1--10 SEMI Prime, 1Flat (57.5mm), Empak cst
F859 46 n-type Si:P [100--25° towards[110]] ±1° 6" 800 C/C 1--100 SEMI notch Prime, Empak cst
E089 2 n-type Si:P [100] 6" 1,910 ±10 P/P 1--100 SEMI Prime, 1Flat (57.5mm), TTV<2μm, in stacked trays of 2 wafers
F089 4 n-type Si:P [100] 6" 1,910 ±10 P/P 1--100 SEMI Prime, 1Flat (57.5mm), TTV<5μm, sealed in stacked trays of 1 + 3 wafer
G844 3 n-type Si:P [100] 6" 5,000 P/P 1--35 SEMI Prime, 1Flat (57.5mm), Individual cst
L066 100 n-type Si:Sb [100] 6" 675 P/E 0.01--0.02 SEMI Prime, 1Flat (57.5mm), Empak cst
C673 15 n-type Si:Sb [100] 6" 675 P/E 0.008--0.020 SEMI Prime, 1Flat (57.5mm), Empak cst
2533 2 n-type Si:As [100] 6" 1,000 L/L 0.0033--0.0037 SEMI, 1Flat(57.5mm), in individual wafer cassettes
E533 1 n-type Si:As [100] 6" 1,000 L/L 0.0033--0.0037 SEMI, 1Flat(57.5mm), in individual wafer cassettes
TS018 75 n-type Si:As [100] 6" 575 ±15 P/P 0.001--0.005 {0.0040--0.0041} SEMI Prime, 2Flats (PF @ <110>±1°, SF 135° from PF}, Laser Mark, Empak cst
4204 64 n-type Si:As [100] 6" 675 P/EOx 0.001--0.005 SEMI Prime, 1Flat (57.5mm), Empak cst, Back--side LTO (0.64--0.666)um, TTV<4μm, Bow/Warp<20μm
5541 118 n-type Si:P [100] 6" 675 P/EOx 0.001--0.002 SEMI Prime, 1Flat (57.5mm), with strippable Epi layer Si:P (0.32--0.46)Ohmcm, 3.20±0.16μm thick, Empak cst
TS101 69 n-type Si:As [100] 6" 675 ±15 P/EOx 0.001--0.005 {0.0036--0.0041} SEMI Prime, 1Flat (57.5mm), TTV<5μm, LTO (0.3--0.6)μm, Empak cst
TS037 125 n-type Si:P [111--1.5°] ±0.5° 6" 675 P/E 3--12 {5.0--8.8} SEMI Prime, 1Flat (57.5mm), Empak cst
6559 10 n-type Si:P [111] ±0.5° 6" 675 P/E 1--100 Prime, NO Flats, Empak cst
TS112 25 n-type Si:As [111--4°] ±0.5° 6" 508 P/E 0.0038--0.0042 SEMI Prime, 1Flat (57.5mm), TTV<5μm, Empak cst
TS034 125 n-type Si:As [111--4°] ±0.25° 6" 625 ±15 P/EOx 0.0024--0.0035 {0.0029--0.0030} SEMI Prime, 1Flat (57.5mm), Back--side: LTO 600nm thick, Empak cst
TS109 671 n-type Si:As [111--4°] ±0.5° 6" 508 ±15 P/E 0.0023--0.0026 SEMI Prime, 1Flat (57.5mm), TTV<8μm, Empak cst
TS102 100 n-type Si:As [111--4°] ±0.5° 6" 675 P/E 0.001--0.005 SEMI Prime, 1Flat (57.5mm), Empak cst, TTV<4μm, Bow<10μm, Warp<20μm
TS107 93 n-type Si:As [111--2.5°] ±0.5° 6" 625 ±15 P/EOx 0.001--0.004 {0.0021--0.0036} SEMI Prime, JEIDA Flat (47.5mm), Back--side LTO (0.45--0.55)μm, TTV<6μm, Empak cst
1660 19 n--type Si:As [100] 6" 675 OxP/EOx 0.001----0.005 SEMI TEST (spots & minor visual defects), 1Flat (57.5mm), Thermal Oxide 0.1μm±5% thick, Empak cst