6 Inch Silicon Wafers for Research and Production in Stock

university wafer substrates

Large Selection of 6 Inch Silicon Wafers In stock

You can buy as few as one wafer or large volumes. We cater to researchers needing high-quality but affordable substrate for their experiments. The price of silicon wafers is based on specs and quantity.

Researcher:

I was looking for Fe (iron) doped Silicon wafers. I checked the website but not able to find them. Can you please help me out if you have Iron coated silicon wafers? Can I get the quote for 2 iron coated wafers? I am also looking for Patterned substrates with Cu and Si stripe dimensions of ~160 micrometre and ~60 micrometres.

Can you send the quote for them too, so that I can order in single purchase order?

Please reference #255361 for specs and pricing.

Get Your 6 Inch Silicon Wafer Quote FAST! Or, buy online and start researching today!

Company:

Below Are Just Some of the 6 Inch Silicon Wafers that We Carry

We have a large selection of standard and hard to find specs in stock. We work with the researcher to provide the best specs for their research. Fast delivery is a must and we carry in inventory the following. If you don't see what you need, just let us know!

Wafer Dopings:

  • Undoped
  • Boron (B)
  • Gallium (Ga)
  • Arsenic (As)
  • Antimony (Sb)
  • Degenerately Doped

Wafer Types

Wafer Orientations

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6 inch silicon wafers in cassette

What is The Cost of 6 Inch (150mm) Silicon Wafers

Taiwan-based silicon wafer manufacturers are reporting that demand for 6 Inch Silicon Wafers is soaring. The company's stock prices have doubled since March and are at record highs. The rise in demand for 5G, artificial intelligence, and cloud computing is driving a small increase in production costs. However, prices are expected to go down soon. This shortfall will make it harder for manufacturers to meet demand.

6 inch silicon wafer orientation and specsWhile the price of 6 Inch Silicon Wafers is higher than the global average, it is less expensive than competing products. This is because the number of dies per wafer is higher, resulting in reduced scrap. In addition, the thinner layers allow faster deposition, which results in more batches per day. Plessey LEDs have undergone a final process to develop a patented technology. They are available in production quantities and have advanced product information. They are currently targeting incandescent lamp replacements.

In 2019, FBK fabricated three-dimensional pixels on six-inch silicon wafers. They used 150-mm-thick SOI wafers. The process is repeatable for different pixel layouts. They were tested with process splits, and their full structure was exposed in one shot. Further, the 6-inch wafers were examined in terms of surface morphology prior to and after the SiNW arrays.

The most common 6 Inch Silicon Wafer size is ten millimeters. The process of constructing an 8-mm-by-10mm IC takes eight photolithographic steps, producing eight complete ICs on a wafer. Nevertheless, some of the most common problems are pinholes, intrusions, and extrusions in the photomask P. Dust and misalignment are the main culprits, and a single unlucky IC with two defects may be unusable.

The size of the 6 Inch Silicon Wafer is not only a standard silicon wafer, but the process is also important for many industries. The process can reduce the production cost of semiconductor products, including LEDs and sensors. In contrast, the larger the size of the silicon wafer, the more efficient it will be for a given product. It can also result in higher yield. A large pixel is a significant cost cut for a chip, and one with low yield is better than none at all.

When manufacturing a chip, it is imperative to choose a reliable supplier. The more reliable, the better. Often, the quality of a wafer will affect the price. This is especially important for a semiconductor product. There are several factors to consider before choosing a manufacturer. A good wafer has good quality, and it will be a great choice in the long run. If it is not, it is best to find a manufacturer who uses high-quality 6 inch silicon wafer.

Currently, China is the largest consumer of 6 Inch Silicon Wafers. Its demand for 6-inch silicon wafers is expected to increase seven-fold over the next decade. Meanwhile, the growth of 4G mobile phones will increase demand for logic chips and storage chips. Therefore, the growth of the 6-inch silicon wafer will be the fastest in history, and it will also drive future wafer prices. A large-scale market will drive the supply of the cheapest aforementioned components.

The cost of producing 6 inch silicon wafers is relatively low compared to 8-inch silicon wafers. The cost of a 6-inch silicon wafer depends on the size of the wafer. When comparing the two, the 6-inch diameter is more expensive than eight-inch silicon. This is why the company is making a huge investment in new technology. While the production costs are lower in comparison to the eight-inch diameter, there are a number of reasons to look at an alternative.

The growth of 6 inch silicon wafers is the main reason that the industry is booming. The first stage of the process is the growing of the silicon ingot. Once the growth process has begun, the crystalline structure is ready to be cut and shaped. During this phase, the crystallization of the silicon ingots is a complex process. While it may take only a week to grow, it could take as long as a month.

6 Inch Silicon Substrated Used for Spin Coating Optical Adhesives

A government researcher requested the following:

We would like SSP.  Since we will be using these wafers for spincoating optical adhesives, the other specs (type,dopant) aren’t that important to us.

We quoted:

  • Diameter: 6"
  • Doping: Any
  • Orientation: (100)
  • Resistivity: >100 ohm-cm
  • Thickness: 1000um
  • Material: Silicon
  • Quantity: 25

Reference #194619 for specs and pricing.

Where Can You Buy 6 Inch Silicon Wafers Online?

Here are just some of the ongoing sales.

Item Type/dop Orient. Diam. Thck (μm) Pol Resistivity Ohm-cm
TS006 P/B [100] 6" 525 ±15 P/E MCZ 0.01--0.02 {0.015--0.017}
SEMI Prime, 1 SEMI Flat 57.5mm @ <011>±0.5°, Non--standard Edge profile, Oxygen=(11--13)ppma, Carbon<1ppma, Empak cst
TS004 P/B [100] 6" 675 ±15 P/E MCZ 0.01--0.02 {0.013--0.017}
SEMI Prime, 1 SEMI Flat 57.5mm @ <011>±0.5°, Oxygen=(3--9)ppma, Carbon<1ppma, Back--side: Acid etch, Empak cst
TS005 P/B [100] 6" 675 ±15 P/E MCZ 0.01--0.02 {0.013--0.016}
SEMI Prime, 1Flat 57.5mm @ <001>±0.5° {not @ <011>}, Oxygen=(3--9)ppma, Carbon<1ppma, Back--side: Acid etch, Empak cst
K667 P/B [100] 6" 900 C/C FZ >1,000
SEMI Prime, 1Flat (57.5mm), Empak cst
7038 P/B [111] ±0.5° 6" 875 P/E FZ >10,000
SEMI Prime, 1Flat (57.5mm), Empak cst
6898 P/B [111] ±0.5° 6" 1,000 P/E FZ >5,000
SEMI Prime, 1Flat (57.5mm), Empak cst
7208 N/Ph [100] ±1° 6" 1,000 ±50 P/P FZ >9,500
SEMI Prime, 1Flat (57.5mm), Empak cst, Lifetime>6,000μs
E239 N/Ph [100] 6" 825 C/C FZ 7,000--8,000 {7,025--7,856}
SEMI, 1Flat, Lifetime=7,562μs, in Open Empak cst
F907 N/Ph [100] 6" 3,000 P/P FZ >4,800
SEMI Prime, 1Flat (57.5mm), Individual cst, Lifetime>7,000μs.
7212 N/Ph [100] ±1° 6" 450 P/P FZ 4,300--8,300
SEMI Prime, 1Flat (57.5mm), Empak cst
7233 N/Ph [100] ±1° 6" 675 P/P FZ 4,300--8,300
SEMI Prime, 1Flat (57.5mm), Empak cst
L625 N/Ph [100--6° towards[111]] ±0.5° 6" 625 P/E FZ >3,500
SEMI Prime, 1Flat (57.5mm), Empak cst
E700 N/Ph [100--6° towards[111]] ±0.5° 6" 675 P/P FZ >3,500
SEMI Prime, 1Flat (57.5mm), Empak cst
F700 N/Ph [100--6° towards[111]] ±0.5° 6" 790 ±10 C/C FZ >3,500
SEMI, 1Flat, Empak cst
4982 N/Ph [100--6° towards[111]] ±0.5° 6" 675 P/P FZ >1,000
SEMI Prime, Notch on <010> {not on <011>}, Laser Mark, Empak cst
D982 N/Ph [100--6° towards[111]] ±0.5° 6" 675 BROKEN FZ >1,000
SEMI notch Broken -- one piece ~50% of wafers other pieces ~20% of wafer, Empak cst
7122 N/Ph [100] 6" 500 ±10 P/P FZ 50--70
SEMI Prime, 1Flat, Empak cst
G122 N/Ph [100] 6" 500 ±10 P/P FZ 50--70
SEMI Prime, 1Flat, Empak cst
5325 N/Ph [100] 6" 725 P/P FZ 50--70 {57--62}
SEMI Prime, 1Flat (57.5mm), Lifetime=15,700μs, Empak cst
7053 N/Ph [100] 6" 2,000 P/P FZ 50--70
SEMI Prime, 1Flat (57.5mm), Cassettes of 10 + 6 wafers
6883 N/Ph [100] 6" 625 ±5 P/P FZ 40--90
SEMI Prime, 1Flat (57.5mm), Total Thickness Variation TTV <3μm,, Empak cst
G883 N/Ph [100] 6" 650 ±5 P/P FZ 40--90
SEMI Prime, 1Flat (57.5mm), TTV<3μm,, Empak cst
F883 N/Ph [100] 6" 675 ±5 P/P FZ 40--90
SEMI Prime, 1Flat (57.5mm), TTV<3μm,, Empak cst
S5622 N/Ph [100] 6" 1,300 ±10 E/E FZ 0.01--0.05
SEMI notch, Empak cst
G228 N/Ph [111] ±0.5° 6" 300 ±15 BROKEN FZ >6,000
Test,Broken into a dozen large pieces ranging from 65% of wafer to 5% and small pieces as well
N445 N/Ph [112--5.0° towards[11--1]] ±0.5° 6" 875 ±10 E/E FZ >3,000
SEMI, 1Flat (47.5mm), TTV<4μm, Surface Chips
G343 N/Ph [112--5° towards[11--1]] ±0.5° 6" 1,000 ±10 C/C FZ >3,000
SEMI, 1 JEIDA Flat (47.5mm), Empak cst, TTV<4μm, Lifetime>1,000μs
7116 Intrinsic Si:- [100] 6" 675 P/P FZ >65,000
SEMI notch Prime, Empak cst
M526 Intrinsic Si:- [100] ±0.1° 6" 720 ±10 P/P FZ >10,000
SEMI Prime, 1Flat (57.5mm), TTV<3μm, Empak cst
7117 Intrinsic Si:- [111] ±0.5° 6" 875 P/P FZ >10,000
SEMI Prime, 1Flat (57.5mm), Empak cst
F613 P/B [110] ±0.5° 6" 300 P/P 20--25
SEMI TEST -- scratched, can be repolished & thinned for extra fee, 2Flats, in unsealed Empak cst
G458 P/B [110] ±0.5° 6" 390 ±10 C/C >10
2Flats, Empak cst
TS002 P/B [110] ±0.25° 6" 625 ±15 P/E 10--20 {11--15}
SEMI Prime, 1 JEIDA Flat (47.5mm) @ <111>, TTV<3μm, Bow<5μm, Warp<10μm, hard cst
TS007 P/B [110] ±0.25° 6" 625 ±15 P/E 10--20 {13.6--13.9}
SEMI Prime, 1 JEIDA Flat 47.5mm @ <111>±0.5°, LaserMark, TTV<2μm, Warp<10μm, Empak cst
TS072 P/B [110] ±0.25° 6" 625 ±15 P/E 10--20
SEMI Prime, 1 JEIDA Flat (47.5mm) @ <111>±0.5°, Laser Mark, TTV<3μm, Bow<5μm, Warp<10μm, Empak cst
6427 P/B [110] ±0.5° 6" 675 P/E 0.01--0.02
Prime, PFlat @ [111]±0.25°, SF @ [111]±5° 109.5° CW from PF, Empak cst
TS054 P/B [100] 6" 675 P/E 15--25 {16.1--21.7}
SEMI Prime, 1Flat (57.5mm), Empak cst, TTV<5μm
4980 P/B [100] 6" 220 P/P 10--30
SEMI 1Flat (57.5mm), TEST grade (surface scratches & digs), TTV<4μm, Unsealed in Empak cst
L405 P/B [100] 6" 1,000 P/P 10--15
SEMI Prime, 1Flat (57.5mm), Empak cst, 4 Prime wafers plus 2 scratched wafers at no cost
7066 P/B [100] 6" 675 P/P 5--10
SEMI Prime, 1Flat (57.5mm), Empak cst
6287 P/B [100] 6" 675 P/E 5--10
SEMI Prime, 1Flat (57.5mm), Empak cst
6751 P/B [100] 6" 1,000 P/E 5--10
SEMI Prime, 1Flat (57.5mm), Empak cst
7030 P/B [100] 6" 1,000 P/E 5--10
SEMI Prime, 1Flat (57.5mm), Empak cst
E964 P/B [100] 6" 475 P/P 1--30
SEMI Prime, 1Flat (57.5mm), Empak cst
5964 P/B [100] 6" 500 P/P 1--30
SEMI Prime, 1Flat (57.5mm), Empak cst, TTV<5μm
D964 P/B [100] 6" 500 P/P 1--30
SEMI Prime, 1Flat (57.5mm), Empak cst, TTV<5μm
5354 P/B [100--9.7° towards[001]] ±0.1° 6" 525 P/P 1--100
SEMI Prime, 1Flat (57.5mm) at <110>±0.1°, Empak cst
B420 P/B [100] 6" 675 P/P 1--5
SEMI Prime, 1Flat, Soft cst
6358 P/B [100--6° towards[111]] ±0.5° 6" 675 P/E 1--30
SEMI Prime, 1Flat (57.5mm), Empak cst
N698 P/B [100] 6" 675 P/E 1--100
SEMI Prime, 1Flat (57.5mm), Empak cst
6404 P/B [100] 6" 800 E/E 1--50
SEMI, 1Flat (57.5mm), Empak cst, TTV<5μm
F162 P/B [100] 6" 2,000 ±50 P/P 1--35
SEMI Prime, 1Flat (57.5mm), Individual cst, Group of 6 wafers
E162 P/B [100] 6" 2,000 ±50 P/E 1--35
SEMI Prime, 1Flat (57.5mm), Group of 2 wafers, Back--Side polished with small scratches
7047 P/B [100] 6" 400 P/P 0.5--1.0
SEMI Prime, 1Flat (57.5mm), Empak cst
S5821 P/B [100] 6" 275 P/P 0.01--0.05
SEMI Prime, 1Flat (57.5mm), TTV<2μm, Empak cst
TS104 P/B [100] 6" 625 ±15 P/EOx 0.01--0.02 {0.0139--0.0144}
SEMI Prime, JEIDA Flat 47.5mm, Back--side LTO (0.3--0.4)μm, TTV<6μm, Empak cst
TS055 P/B [100] 6" 675 ±15 P/E 0.01--0.02 {0.0102--0.0133}
SEMI Prime, 1Flat (57.5mm), Empak cst
TS103 P/B [100] 6" 525 ±15 P/E 0.007--0.015 {0.0126--0.0134}
SEMI Prime, 1Flat (57.5mm), TTV<5μm, Empak cst
6005 P/B [100] 6" 320 P/E 0.001--0.030
JEIDA Prime, Empak cst
6484 P/B [100] 6" 675 P/E 0.001--0.005
SEMI Prime, 1Flat (57.5mm), Empak cst
TS108 P/B [111--3°] ±0.5° 6" 625 ±15 P/E 0.01--0.02
SEMI Prime, 1Flat (57.5mm), TTV<8μm, Empak cst
J668 P/B [111] ±0.5° 6" 675 E/E 0.010--0.025
SEMI, 1Flat (57.5mm), Empak cst, TTV<5μm
TS105 P/B [111--1.5°] ±0.35° 6" 675 P/EOx 0.001--0.002 {0.0017--0.0018}
SEMI Prime, 1Flat (57.5mm), Back--side LTO 400±40nm, TTV<6μm, Empak cst
5814 N/Ph [100] 6" 925 ±15 E/E 5--35 {12.5--29.7}
JEIDA Prime, Empak cst, TTV<5μm
B728 N/Ph [100] 6" 675 P/E 2.7--4.0
SEMI Prime, Empak cst
TS063 N/Ph [100] 6" 525 P/E 1--3 {1.1--1.5}
SEMI Prime, 1Flat (57.5mm), Empak cst
TS075 N/Ph [100] 6" 525 P/E 1--3 {1.5--2.0}
SEMI Prime, Flat: JEIDA 47.5mm, Oxygen=(10--14)ppma, Carbon<1ppma, Empak cst (14 + 12 wafers)
TS076 N/Ph [100] 6" 525 P/E 1--3 {1.1--2.3}
SEMI Prime, Flat: JEIDA 47.5mm, Oxygen=(10--14)ppma, Carbon<1ppma, Empak cst (8+24+25 wafers)
6971 N/Ph [100--25° towards[110]] ±1° 6" 675 P/P 1--100
SEMI notch Prime, Empak cst, TTV<1μm
6965 N/Ph [100] 6" 675 ±10 P/E 1--10 {4.34--5.36}
SEMI Prime, 1Flat (57.5mm), Empak cst
7170 N/Ph [100] ±1° 6" 675 P/E 1--20 {1.8--12.0}
Prime, 2 SEMI Flats, Back--side Acid etched, Empak cst
C716 N/Ph [100--28° towards[110]] ±1° 6" 700 P/P 1--100
SEMI Notch Prime, TTV<2μm, Empak cst
S5913 N/Ph [100] ±1° 6" 800 P/E 1--10
SEMI Prime, 1Flat (57.5mm), Empak cst
F859 N/Ph [100--25° towards[110]] ±1° 6" 800 C/C 1--100
SEMI notch Prime, Empak cst
E089 N/Ph [100] 6" 1,910 ±10 P/P 1--100
SEMI Prime, 1Flat (57.5mm), TTV<2μm, in stacked trays of 2 wafers
F089 N/Ph [100] 6" 1,910 ±10 P/P 1--100
SEMI Prime, 1Flat (57.5mm), TTV<5μm, sealed in stacked trays of 1 + 3 wafer
G844 N/Ph [100] 6" 5,000 P/P 1--35
SEMI Prime, 1Flat (57.5mm), Individual cst
L066 N/Sb [100] 6" 675 P/E 0.01--0.02
SEMI Prime, 1Flat (57.5mm), Empak cst
C673 N/Sb [100] 6" 675 P/E 0.008--0.020
SEMI Prime, 1Flat (57.5mm), Empak cst
2533 N/As [100] 6" 1,000 L/L 0.0033--0.0037
SEMI, 1Flat(57.5mm), in individual wafer cassettes
E533 N/As [100] 6" 1,000 L/L 0.0033--0.0037
SEMI, 1Flat(57.5mm), in individual wafer cassettes
TS018 N/As [100] 6" 575 ±15 P/P 0.001--0.005 {0.0040--0.0041}
SEMI Prime, 2Flats (PF @ <110>±1°, SF 135° from PF}, Laser Mark, Empak cst
4204 N/As [100] 6" 675 P/EOx 0.001--0.005
SEMI Prime, 1Flat (57.5mm), Empak cst, Back--side LTO (0.64--0.666)um, TTV<4μm, Bow/Warp<20μm
5541 N/Ph [100] 6" 675 P/EOx 0.001--0.002
SEMI Prime, 1Flat (57.5mm), with strippable Epi layer Si:P (0.32--0.46)Ohmcm, 3.20±0.16μm thick, Empak cst
TS101 N/As [100] 6" 675 ±15 P/EOx 0.001--0.005 {0.0036--0.0041}
SEMI Prime, 1Flat (57.5mm), TTV<5μm, LTO (0.3--0.6)μm, Empak cst
TS037 N/Ph [111--1.5°] ±0.5° 6" 675 P/E 3--12 {5.0--8.8}
SEMI Prime, 1Flat (57.5mm), Empak cst
6559 N/Ph [111] ±0.5° 6" 675 P/E 1--100
Prime, NO Flats, Empak cst
TS112 N/As [111--4°] ±0.5° 6" 508 P/E 0.0038--0.0042
SEMI Prime, 1Flat (57.5mm), Back--side: LTO 600nm thick, Empak cst
TS034 N/As [111--4°] ±0.25° 6" 625 ±15 P/EOx 0.0024--0.0035 {0.0029--0.0030}
SEMI Prime, 1Flat (57.5mm), Back--side: LTO 600nm thick, Empak cst
TS109 N/As [111--4°] ±0.5° 6" 508 ±15 P/E 0.0023--0.0026
SEMI Prime, 1Flat (57.5mm), TTV<8μm, Empak cst
TS102 N/As [111--4°] ±0.5° 6" 675 P/E 0.001--0.005
SEMI Prime, 1Flat (57.5mm), Empak cst, TTV<4μm, Bow<10μm, Warp<20μm
TS107 N/As [111--2.5°] ±0.5° 6" 625 ±15 P/EOx 0.001--0.004 {0.0021--0.0036}
SEMI Prime, JEIDA Flat (47.5mm), Back--side LTO (0.45--0.55)μm, TTV<6μm, Empak cst

How to Make the Most of 6 Inch Silicon Wafers

Several manufacturers have begun developing six-inch wafers and eight-inch wafers. While these large sized silicon wafers are cheaper to produce, they are still expensive and aren't yet mainstream. Moreover, they are of lower quality than their four-inch counterparts. While they can be used to produce diodes, they are not yet as effective as their four-inch counterparts. Here's how to make the most of these large sized wafers.

First, we need to determine the optimal orientation of silicon wafers for semiconductor production. Choosing the right orientation will maximize the efficiency of the semiconductor and produce the highest quality products. Secondly, we need to make sure that the wafers we purchase are compatible with our manufacturing process. After all, we're going to use them in semiconductor devices. In order to get the best results, we need to choose the best wafer size for our process.

Second, we must examine the mechanical damage of silicon wafers. After rough grinding, surface roughness is 0.15 m. After fine grinding, it is 0.016 m. We also need to determine warpage, which is between sixty and ninety m. Third, we need to determine the thickness of the layered silicon. These measurements should be carried out on a 6-inch silicon-based wafer.

Lastly, we need to identify the type of silicon wafer we want. The best silicon wafers are mirror-like and have uniform surfaces. If the surface is not mirror-like, we can't use them for our projects. The size of the silicon wafers that we use in our manufacturing processes must be as uniform as possible. For instance, a 6 inch silicon-based semiconductor is the best choice if we want to improve performance and reduce cost.

The thickness of the six-inch P-type multi-crystalline silicon wafer can be measured using a reflectivity analyzer. The dark black areas have a lower reflectance than the light ones. The dark black spots are the same as those in Fig. 8 d. In contrast, vertically aligned SiNW arrays have a lower reflectance than their slightly tilted counterparts. Thus, vertically aligned SiNWs reduce reflection and increase absorption.

The photoresists used in semiconductor fabrication are g-line photoresists, i-line photoresists, and EUV-V-photoresists. These photoresists are available in different sizes and types, depending on the material used. The most common types of these materials are silicon annealed. In this study, we examine the etching process for 6-inch polycrystalline silicon wafers.

The process of cleaving a silicon wafer can vary. The process of cleaving depends on the size of the wafer. Basically, the larger the silicon, the easier it is to cleave. For example, the process of cleaving is faster with larger silicon wafers. The cleft is the cutoff edge of the silicon. In this case, the entire chip is sliced into smaller pieces.

During the process of manufacturing 6 inch silicon wafers, it is important to select the proper orientation for the silicon wafer. Optimal orientation will help maximize the efficiency of the semiconductor. If the silicon wafer has the correct orientation, it will be compatible with the entire process. Therefore, it is important to choose the correct orientation for the silicon wafer. If the silicon wafer has the right orientation, it will produce the best products.

The process of making 6 inch silicon wafers is a relatively simple one. The process is highly efficient, allowing for more precision and uniformity in the final product. A good silicon wafer can be processed quickly and efficiently. Typically, a silicon wafer costs between $160 and $150 and $500. A 6 inch wafer is a good example of this. It has many advantages. It is an excellent choice for semiconductor manufacturing.

The manufacturing process for producing 6 inch silicon wafers is very precise. The process also requires an enormous investment to produce the wafers. As a result, a six-inch silicon safer is more expensive than a one-inch wafer. However, it is worth it because it allows for more flexibility during machining. Besides, it is more efficient than a three-inch-wide one.