(110) Silicon Wafer Orientation for Research & Production

University Wafer Silicon Wafers and Semicondcutor Substrates Services
University Silicon Wafer for Production

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(110) Silicon Wafers

Please see below for just a short list of the (110) Silicon Substrates that we have in stock and ready to ship. If you don't see what you need then please email us your specs.

Diam(mm) Material Dopant Orient. Thck(μm) Surf. ResistivityΩcm

Prime, 2Flats, Empak cst

6" p-type Si:B [110] ±0.5° 390 ±10 C/C >10

Prime, 2Flats, Empak cst, TTV<5μm

4" p-type Si:B [110] ±0.5° 500 P/E FZ >10,000
4" p-type Si:B [110] ±0.5° 200 P/P FZ 1-2
4" p-type Si:B [110] ±0.5° 200 P/P FZ 1-2

SEMI Prime, 2Flats, Empak cst

4" p-type Si:B [110] ±0.25° 525 P/E 5-10
4" Intrinsic Si:- [110] ±0.5° 500 P/E FZ >15,000
4" p-type Si:B [110] ±0.25° 525 P/E 5-10
4" Intrinsic Si:- [110] ±0.5° 500 P/E FZ >15,000
4" p-type Si:B [110] ±0.5° 200 P/P FZ 1-2

SEMI Prime, 2Flats - Primary @ <111>±0.5° - edge unrounded, Secondary @ <111>. 70.5° CCW from Primary, Empak cst, Lifetime>6,000μs

4" n-type Si:P [110] ±0.5° 500 P/P FZ >9,600

SEMI Prime, 2Flats - Primary @ <111>±0.5°, Secondary @ <111>. 70.5° CCW from Primary, in Empak cst, 3 wafers with minor edge chips, Lifetime >6,000μs

4" n-type Si:P [110] ±0.5° 500 P/P FZ 5,000-15,000

SEMI Prime, 2Flats - Primary @ <111>±0.5° - edge unrounded, Secondary @ <111>. 70.5° CCW from Primary, in Empak cassette Lifetime>6,000μs

4" n-type Si:P [110] ±0.5° 500 P/P FZ 5,000-15,000

SEMI Test (Both sides with defects), 2Flats @ [111] - Secondary 70.5° CCW from Primary

4" Intrinsic Si:- [110] 500 P/P FZ >20,000

Test, Small Surface Defects, 2Flats

4" Intrinsic Si:- [110] ±0.5° 500 P/E FZ >15,000

SEMI Prime, Primary Flat @ [111]±0.25°, S Flat @ [111]±5° 109.5° CW from PF

4" p-type Si:B [110] ±0.25° 525 P/E 5-10

SEMI Prime (back-side polished but not Prime), 2Flats, Empak cst, TTV<5μm, Bow/Warp<10μm

4" p-type Si:B [110] ±0.5° 750 P/E 1-100

SEMI Prime, Primary Flat @ [111]±0.25°, SFlat @ [111]±5° (109.5° CW from PFlat)

4" p-type Si:B [110] ±0.5° 380 P/P 1-30

SEMI Prime, 2Flats @ [111] - Secondary 70.5° CW from Primary

4" n-type Si:P [110] ±0.5° 525 P/P 20-80

SEMI Prime, TTV<10μm, Bow/ Warp<30μm, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary

4" n-type Si:P [110] ±0.5° 500 P/P 3-10

SEMI Prime, Primary Flat @ <111>±0.2°, SF @ <111> 70.5° CW from PF, TTV<4μm Bow<15μm, Warp<30μm

4" n-type Si:P [110] ±0.2° 525 P/E 3-10

SEMI Prime, TTV<10�m, Bow/ Warp<30�m, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary

4" n-type Si:P [110] ±0.3° 525 P/P 3-10

SEMI Prime, TTV<10um, Bow/ Warp<30um, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary

4" n-type Si:P [110] ±0.3° 525 P/P 3-10

SEMI Prime, Primary Flat @ <111>±1°, S Flat @ <111> 70.5° CW from PF, TTV<10μm Bow/Warp<30μm

4" n-type Si:P [110] ±0.5° 525 P/E 3-9

SEMI Prime, 2Flats, Empak cst, TTV<5μm

4" n-type Si:P [110] ±0.5° 525 P/E 3-9

SEMI Prime, TTV<10�m, Bow/ Warp<30um, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary

4" n-type Si:P [110] ±0.3° 525 P/P 3-10

Prime, 2Flats @ [111] - Secondary 70.5° CW from Primary

4" n-type Si:Sb [110] ±0.5° 525 P/P 0.01-0.02 {0.0176-0.0180}

Secondary at 70.5°±5° CW from Primary

4" ShowShoppingCartTally(); n-type Si:As [110] ±0.5° 275 P/P 0.001-0.005