2 Inch Silicon Wafers for Research and Production in Stock

university wafer substrates

Large Selection of 2 Inch Silicon Wafers In stock

Not only do we sell bare silicon wafers, we can also deposit coatings on our 2 inch silicon wafers! From thermal oxide, nitride and metals, we can deposit anything including precious metals like gold.

As for wafer grades, in general, prime grade silicon wafers are free of minor polishing defects. Test grade silicon wafers, on the other hand, may have minor defects. UniversityWafer, Inc. guarantees our wafer quality.

You can buy as few as one wafer or large volumes. We cater to the researcher who needs a high-quality, but affordable substrate to experiment on.

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Below Are Just Some of the 2 Inch Silicon Wafers that We Carry

We have a large selection of standard and hard to find specs in stock. We work with the researcher to provide the best specs for their research. Fast delivery is a must and we carry in inventory the following. If you don't see what you need, just let us know!

Wafer Dopings:

  • Undoped
  • Boron (B)
  • Gallium (Ga)
  • Arsenic (As)
  • Antimony (Sb)
  • Degenerately Doped

Wafer Types

Wafer Orientations

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2 inch silicon wafer with standard resistivity

Where Can You Buy CZ and FZ 2 Inch Silicon Wafers Online?

See below for our 2 Inch silicon wafer inventory.

What Silicon is Used to Calibrate a Wafer Film Thickness?


"I need standard Si that I can use as a substrate for ellipsometry to calibrate my film thicknesses (50-100 nm that will be deposited with thermal evaporation). What would be the most appropriate item for this purpose."

Si Item #763
2" P/B (100) 280um, SSP 1-10 ohm-cm SEMI Prime, 1Flat, hard cst, TTV<4μm, Bow<5μm, Warp<10μm

ID Diam Type Dopant Orien Res (Ohm-cm) Thick (um) Polish Grade
444 50.8mm P B <100> 0-100 320-350 SSP Test
446 50.8mm N P <100> 0-100 300-350um SSP Test
736 50.8mm N P <100> 1-10 280um SSP Prime
763 50.8mm P B <100> 1-10 280um SSP Prime
769 50.8mm P   <111> Any! 330um SSP MECH
1319 50.8mm P B <100> 0.001-0.005 280um SSP Prime
2270 50.8mm N As <100> 0.001-0.005 280um SSP Prime
2018 50.8mm Undoped Undoped <100> >10000 280um DSP Prime
2321 50.8mm P B <111> 1-10 270um SSP Prime
2844 50.8mm   B <100> 0-100   SSP MECH
3126 50.8mm N P <100> 1-10 290um SSP Test
3419 50.8mm P B <100> 0.001-0.005 300um SSP Test
3514 50.8mm P B <100> 1-10 500um SSP Test

Reduced Photoconductivity in Terahertz Spectroscopy Studied with UniversityWafer Silicon Wafers

Researchers from the Optical Sciences Division from the US Naval Research Laboratory in Washington D.C. performed their research on reduced photoconductivity in terahertz spectroscopy with the following silicon wafers specs.

Si Item #2018 - 50.8mm Undoped >10,000 ohm-cm 280um DSP Prime

Methods a.

Materials Gold, titanium, and chromium were obtained commercially and used as what do 2 inch silicon wafers look likerecieved.1 Hydrochloric acid and nitric acid were reagent grade and used as received. The reference silicon (Si) wafer was purchased from University Wafer (ID 2018). It was high resistivity (> 10 000 ohm cm), <100> orientation, double side polished and 280umm thick. Fused quartz substrates were purchased from GM Associates, Inc. b. Fabrication and Morphology of Metal Films The thin metal films were prepared by electron beam deposition onto clean fused quartz substrates within a vacuum chamber held at 667 Pa (5 x 10-7 torr). Substrates were masked to give a film area of ~2.0 cm x 2.5 cm and multiple equivalent samples were prepared side-by-side during the same deposition. A quartz crystal microbalance was used to monitor the rate of deposition and determine the film thickness of the metal layers. A sequential process was used to prepare the films with adhesion layers. In total, the metal film samples on fused quartz substrates included 8nm of gold (8nmAu), 8nm of gold with a 4 nm adhesion layer of either titanium or chromium (8nmAu/4nmTi or 8nmAu/4nmCr, respectively), and 8nm of titanium (8nmTi). AFM imaging was done for 8nmAu, 8nmAu/4nmCr, and 8nmAu4nmTi in ambient using an Agilent 5500 Atomic Force Microscope in non-contact/tapping mode. The cantilever was highly doped silicon with a tip radius of 8 2 nm. A sample was also prepared by exposing a duplicate sample of the 8nmAu/4nmCr film to aqua regia to remove the gold layer. This was done by dipping the film in aqua regia for 1 minute followed by sequentially rinsing with distilled water and ethanol and then drying under a stream of compressed air. The black film that remained following this treatment is denoted 4nmCr in the text, but is most likely described as Cr2O3, the most stable form of oxidized chromium and known to form when thin films of chromium metal are exposed to ambient conditions.2 A similar Au-removal procedure was attempted for the 8nmAu/4nmTi film however the treatment with aqua regia resulted in complete removal of the metal film.

Video: Silicon Wafer Chip Demo: IMOS Semiconductor Module

2" Silicon Wafers Used to Research Used in In Situ Monitoring of Crystal Growth and Dissolution of Oriented Layered Double-Hydroxide Crystals Immobilized on Silicon

Layered double-hydroxide (LDH) minerals have recently attracted attention through their potential industrial application as fillers in mineral–polymer nanocomposite materials and, separately, as solid base catalysts to promote a range of reactions in an environmentally sound way. Little research has been undertaken on the crystal growth mechanism of LDHs using in situ methods. Recently, advances have been made in the controlled deposition and immobilisation of nanometre-sized LDH crystals onto a silicon substrate with preferred orientation. In this work we present initial studies using atomic force microscopy to image in real time immobilised LDH crystals during stages of hydration, growth and dissolution. The various stages were recorded by adjusting the reactant concentrations of the surrounding aqueous solution, allowing crystal dynamics to be visualised. Under certain conditions preferred stability of certain-sized LDH crystals relative to others was observed, indicating the operation of an Ostwald ripening process in samples containing a
heterogeneous distribution of crystallite sizes.

Substrates Used by The Researchers

Polished, Si wafers in 110 orientation (2" diameter, 270 mm thickness) were obtained from University Wafer, Boston, MA 02127 and cut into smaller pieces (ca. 8mm8 mm) in a clean room environment. The remaining reactants were all obtained from Sigma Aldrich, and were used without further purification.