Silicon Carbide to Replace Silicon Wafers in Semiconductor Devices

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Our Silicon Carbide (SiC) wafers are used to fabricate High-Powerd Devices

Silicon Carbide (SiC) Semiconductor Market - By Device

  • Discrete Device
  • Diode
  • Module
  • Bare Die

Silicon Carbide Semiconductor Market - By Vertical

  • Telecommunications
  • Energy & Power
  • Renewable Energy & Photovoltaic
  • Automotive
  • EV
  • HEV
  • Military & Defense

Silicon Carbide Wafers to Replace Silicon

Silicon Carbide (SiC) wafers are increasingly found semiconductor devices that were once dominated by silicon.   Researchers have found that SiC semiconductor devices advantages over silicon wafers based devices include:

  • Faster speed
  • Smaller sStronger (Silicon Carbide is one of the strongest materials on earth.)
  • Greater efficiency in normal and adverse condition
  • Cost-effective in many applications.

Silicon Carbide can handle much higher temperatures and greater voltages than silicon semiconductors. This is great news for solar as SiC inverters are more robust. SiC can replace silicon in the following applications:

  • Solar Inverters and power electronic devices
  • Heat exchangers in solar concentrating power plants
  • Electric Vehicles (EVs)

We have a large selection of SiC substrates 4H and 6H epi ready.

You can buy as few as one wafer in diameters ranging from 5mm x 5mm up to 150mm.

Many are in stock and ready to ship.

silicon carbide substrates

Which Silicon Carbide Wafer Can be Used to Make Sensitive van der Pauw sensor?

Researchers have used 50.8mm (0001) P-type 4H silicon carbide to fabricate van der Pauw strain sensor.

The van der Pauw sensor was fabricated with the followng SiC specs: 4° off-cut surface from the basal plane (0001) towards the 〈11[2 with combining macron]0〉 orientation. The 4H-SiC wafer has a thickness of 350 μm, wiht 1 μm p-type epilayer, 1 μm n-type buffer layer, and a low-doped n-type substrate. The p-type layer was formed using aluminum dopants, with a concentration of 1018 cm−3, while doping concentration of the n-type layer was also 1018 cm−3 with nitrogen dopants.

The following Specs Will Work For Your Research:

4H-SiC (0001) with 1 μm thick p-type epilayer with a concentration of 1018 cm−3" this P-type SiC epitaxial wafer

1> the wafer 3" to 6" diameter,but usually do 4" and 6"
2> thickness upon customer's requirement,as long as no less than 100nm
3> usually based on DSP SiC,SSP needs to do custom