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Silicon Carbide (SiC) wafers are increasingly found semiconductor devices that were once dominated by silicon. Researchers have found that SiC semiconductor devices advantages over silicon wafers based devices include:
Silicon Carbide can handle much higher temperatures and greater voltages than silicon semiconductors. This is great news for solar as SiC inverters are more robust. SiC can replace silicon in the following applications:
You can buy as few as one wafer in diameters ranging from 5mm x 5mm up to 150mm.
Many are in stock and ready to ship.
Researchers have used 50.8mm (0001) P-type 4H silicon carbide to fabricate van der Pauw strain sensor.
The van der Pauw sensor was fabricated with the followng SiC specs: 4° off-cut surface from the basal plane (0001) towards the 〈110〉 orientation. The 4H-SiC wafer has a thickness of 350 μm, wiht 1 μm p-type epilayer, 1 μm n-type buffer layer, and a low-doped n-type substrate. The p-type layer was formed using aluminum dopants, with a concentration of 1018 cm−3, while doping concentration of the n-type layer was also 1018 cm−3 with nitrogen dopants.
The following Specs Will Work For Your Research:
4H-SiC (0001) with 1 μm thick p-type epilayer with a concentration of 1018 cm−3" this P-type SiC epitaxial wafer
1> the wafer 3" to 6" diameter,but usually do 4" and 6"
2> thickness upon customer's requirement,as long as no less than 100nm
3> usually based on DSP SiC,SSP needs to do custom