Vacuum Thin-Film Deposition

University Wafer Silicon Wafers and Semicondcutor Substrates Services
University Silicon Wafer for Production

What is Thin-Film Deposition?

Thin-film deposition is usually divided into two types of techniques: thin-film deposition and vacuum deposition. Both methods can be divided into three groups: vacuum, thermal and thermal

separation techniques.

 

Two main methods are used for thin-film coating in vacuum: physical vapour separation and physical vapour separation. Physical vapour deposition is a method used to deposit a coating on the surface of a material such as silicon, glass, metal or other materials. The coating, which is called film, is usually in the thickness range of micrometers. Vacuum coatings are thin and between 0.25 and 10 micrometers thick. These surface layers thickness range from a fraction of nanometers to micrometers.

 

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Sputtered Metal Depositon

 

is an omni-directional process. For this reason, sputter deposition is not a good candidate for Lift-Off processing. If you are interested in metal for Lift-Off processing please see our E-beam evaporation metals page.

 

All sputter films are available on silicon wafers sizes up to 300mm in diameter. We can also provide sputtered films on non-silicon materials, including quartz and glass wafers.

We offer a wide variety of sputtered non-precious metals, dielectric films, and silicon. Precious metals are available for E-Beam evaporation.

 

We understand how important quality is to you. Our sputter process has been designed to deposit ultra-clean metal and dielectric films. All wafer processing, including metal deposition, is performed inside our class 100 clean-room. An in-situ RF etch is added to the process to insure good film adhesion and ohmic contact to underlying conductive layers.

 

In addition to an In-situ RF etch, we can provide an HF-dip just prior to sputtering aluminum and aluminum alloy films. Adding this additional step can further increase ohmic contact between layers.

 

Also, the sputter separation process resembles multi-component sputtering of the target through the introduction of reactive gases into the vacuum chamber. Argon, an inert gas, is put into the vacuum and chambers, while sputterers deposit pure metal. This creates a highly conductive metal. It is accomplished by introducing the reactive gas into a vacuum chamberand sputtering metal parts into it. Protective gases, reactive gases can also be included in the sputtering system for the separation of lead.

The mixed separation of several types of metal can be achieved by correctly assigning the metal material to the sputtering antenna. There is a risk of contamination of the cathodic surface by reactive arc vapour deposition, but passivation by means of an internal aluminium deposition process reduces the need to remove the shield in the sputter deposition chamber continuously.

Metals typically used in the sputtering metal deposition process include:

  • aluminium
  • copper
  • nickel
  • zinc
  • cobal
  • iron
  • lead
  • copper

The above metals are deposited by sputtering and evaporation techniques. These require the use of a high, temperature and low pressure chamber with a large number of electrodes

 

Item Target

High purity Gold (Au) Target Purity 4N

Hight Purity Gold Sputtering Target

High purity Silver (Ag) Target Purity 4N

High Purity Siliver Sputtering Target

High purity Platinum (Pt) Target Purity:3N5 and 4N

High Purity Platinum Sputtering Target Pt

High purity Aluminum (Al) Target Purity 4N, 5N and 5N5

High Purity Aluminum Sputtering Target Al

High purity Copper (Cu) Target 4N5 and 6N

High Purity Copper Sputtering Target Cu
Item Target

High purity Titanium (Ti) Target Purity: 2N7 and 4N5

Titanium Sputtering Target

High purity Nickel (Ni) Target Purity: 3N5 and 4N5

Hight Purity Nickel Sputtering Target

High purity Tantalum (Ta) Target Purity: 3N5 and 4N5

High Purity Sputtering Target Ta

High purity Tungsten (W) Target Purity: 3N5

High Purity Tungsten Sputtering Targets (W)

Molybdenum (Mo) Target Purity: 3N5

Hight Purity Molybdenum Sputtering Target Mo)
Item Target

High purity Silicon (Si) Target Purity: 4N, 5N and 6N

High Purity Silicon Sputtering Target

High purity Graphite (C) Target Purity: 4N and 5N

High Purity Graphite Sputtering Target

High purity Chromium (Cr) Target Purity: 3N5 and 3N8

High Purity Chromium Sputtering Target

Magnesium (Mg) Target Purity: 3N5

High Purity Magnesium Sputtering Target (Mg)

Germanium (Ge) Target Purity: 5N and 6N

High Purity Germanium Sputtering Target (Ge)