As-Cut Si Wafers All Diameters for Research & Production

University Wafer Silicon Wafers and Semicondcutor Substrates Services
University Silicon Wafer for Production

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What are As-Cut Silicon Substrates

As-Cut Si are wafers that are not polished. The are several steps to making a silicon wafer.

  1. As-Cut - the unpolished wafers after the ingot is sliced.
  2. Silicon Lapping
  3. Silicon Etching
  4. Silicon Polishing

As-cut wafers are much lower priced than wafers that are lapped, etched and polished. As-cut surface is extremely rough, non-reflective. Our researchers use the as-cut wafers when their research doesn't require polshed wafers. Research includes but is not limited to Solar.

Ask how our as-cut wafers can help you!

Below are some of the As-Cut Silicon Wafers that we have available.

Item Dia(mm) Typ/Dop Ori Thck(μm) Pol Res Ωcm Specs
K667 6" p-type Si:B [100] 900 C/C FZ >1,000 SEMI Prime, 1Flat (57.5mm),
E239 6" n-type Si:P [100] 825 C/C FZ 7,000-8,000 {7,025-7,856} SEMI, 1Flat, Lifetime=7,562μs, in Open
F700 6" n-type Si:P [100-6° towards[111]] ±0.5° 790 ±10 C/C FZ >3,500 SEMI, 1Flat,
G343 6" n-type Si:P [112-5° towards[11-1]] ±0.5° 1,000 ±10 C/C FZ >3,000 SEMI, 1 JEIDA Flat (47.5mm),, TTV<4μm, Lifetime>1,000μs
G458 6" p-type Si:B [110] ±0.5° 390 ±10 C/C >10 2Flats,
F859 6" n-type Si:P [100-25° towards[110]] ±1° 800 C/C 1-100 SEMI notch Prime,
J724 4" n-type Si:P [100] 425 C/C FZ >5,000 2Flats (p-type flats on n-type wafers),
D279 4" Intrinsic Si:- [100] 640 ±10 C/C FZ >20,000 SEMI Test, 1Flat,, As-Cut, Edge-Rounded, EDGE CHIPS, cannot be polished
E775 4" Intrinsic Si:- [100] 615 ±10 C/C FZ >10,000 SEMI Prime, 1Flat,
F263 4" p-type Si:B [100] 480 C/C 1--30 SEMI Test, 2Flats,, UNPOLISHED WAFERS WITH EDGE CHIPS
5420 4" p-type Si:B [100] 800 C/C 0.001-0.005 SEMI, 2Flats,, With striation marks
B752 4" n-type Si:P [100] 450 C/C 3--5 SEMI Prime, 2Flats,
F975 4" n-type Si:Sb [211] ±0.5° 1,600 C/C 0.01-0.02 SEMI Test, 1Flat,, Wafers can be polished for additional fee
5784 4" Si [110] ±0.5° 525 C/C ? Empak cst
T206 3" p-type Si:B [100] 3,050 ±50 C/C >0.5 1Flat, Individual cst (can be ordered singly)
TS132 3" n-type Si:P [111] ±0.5° 525 C/C 0.5-50.0 {0.89-0.98} SEMI, 1Flat,
U206 2" p-type Si:B [100] 3,150 C/C >0.5 1Flat
7027 2" p-type Si:Ga Poly.   C/C 0.024-0.036 Gallium doped Concentrate (each with measured Gallium content)
7LA 2" p-type Si:B [100-2.5° towards[110]] 500 C/C 1--20 Prime,
4427 1" Intrinsic Si:- [111] ±2° 27,870 C/C FZ >10,000 Single Crystal Silicon Rod, 0.39" diameter × 27.87±0.1mm
6446 0.5" Intrinsic Si:- [100] 12,700 C/C FZ >10,000 NO Flats, a set of 4 rods sealed in polyehtylene foil