Epitaxial Silicon Wafer for Research & Production

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Epitaxial Deposition

Epitaxy is the depositing of a crystalline layer over a crystalline-based semiconductor substrate or surface (such as a Silicon Wafer). Epitaxial or epi-ready devices are comprised of thin nanolayers of semiconductor crystals. The tools used deposit the layer uniformly to form an epi-wafer. By combining different semiconductor materials and dopants in an epi wafer helps determine the performance capabilities of photonics and radio-frequency (RF) semiconductor components.

What is The Main Difference Between Epi-Ready and Regular Silicon Wafer?

Researcher asks:

I am wondering whats the main difference between your epi-ready wafer and regular Si wafer. Does epi-ready wafer has better surface roughness? I need to grow sub-5 nm film on Si and I need a very flat surface. Do you have any recommendations about such DSP Si wafer?

Our Reply:

Unless noted, all of our polished wafers are Epi-Ready on the front side. 

 

Silicon Epi Wafers Sale - Many More Available! Just ask!

 

Epitxial Silicon Wafers

6" Epitaxial Silicon Wafers

Item Qty in Stock Substrate EPI Comment
Size Type Res Ωcm Surf. Thick μm Type Res Ωcm
G541 150 6"Øx675μm n- Si:P[100] 0.001-0.002 P/EOx 0.016 n- Si:P 0.32-0.46 n/n+

4" Epitaxial Silicon Wafers

Item Qty in Stock Substrate EPI Comment
Size Type Res Ωcm Surf. Thick μm Type Res Ωcm
D274 6 4"Øx360μm n- Si:Sb[111] 0.005-0.020 P/E 20 n- Si:P 360 - 440 n/n+
E4_151 8 4"Øx400μm p- Si:B[111] 0.01-0.10 P/E 6.5
22±1.5
p- Si:B
p- Si:B
3.6±10%
300±50
P/P/P+
E4_134 7 4"Øx525μm p- Si:B[111] 0.01-0.02 P/E 8.1±1
6.85±0.75
p- Si:B
p- Si:B
4.5±10%
0.75±0.15
P/P/P+
E4_104 6 4"Øx380μm p- Si:B[111] 0.008-0.020 P/EOx 10.5 p- Si:B 570±10% p/p+
E4_22 3 4"Øx440μm p- Si:B[111] 0.008-0.020 P/E 20 p- Si:B 0.15 ±10% P/P+
E4_106 4 4"Øx440μm p- Si:B[111] 0.008-0.020 P/E 20 p- Si:B 0.25±10% P/P+
E4_105 7 4"Øx525μm p- Si:B[111] 0.001-0.005 P/E 20 p- Si:B 175±10% P/P+
E4_26 10 4"Øx440μm p- Si:B[111] 0.008-0.020 P/E 21 p- Si:B 150 ±10% P/P+
E4_107 8 4"Øx380μm p- Si:B[111] 0.008-0.020 P/EOx 23 p- Si:B 200±10% P/P+
E4_108 9 4"Øx380μm p- Si:B[111] 0.008-0.020 P/EOx 23 p- Si:B 80±10% P/P+
E4_42 4 4"Øx440μm p- Si:B[111] 0.008-0.020 P/E 32 p- Si:B 600 ±10% P/P+
E4_109 8 4"Øx440μm p- Si:B[111] 0.01-0.02 P/E 32.5 p- Si:B 100±10% P/P+
E4_21 5 4"Øx380μm p- Si:B[111] 0.008-0.020 P/EOx 40 p- Si:B 550 ±10% P/P+
E4_133 3 4"Øx525μm p- Si:B[111] 0.01-0.02 P/E 14
10
n- Si:P
p- Si:B
2.5±0.3
15
N/P/P+
E4_135 2 4"Øx525μm p- Si:B[111] 0.01-0.02 P/E 14
10
n- Si:P
p- Si:B
2.5±10%
9±10%
n/p/p+
E4_113 8 4"Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 20
10
p- Si:B
n- Si:P
10±1.5
5.5±0.7
P/N/N+
E4_127 5 4"Øx381μm n- Si:As[111] 0.0010-0.0035 P/E 33
10
p- Si:B
n- Si:P
12±10%
4±10%
P/N/N+
E4_147 9 4"Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 33±5
9
p- Si:B
n- Si:P
12±2
4
P/N/N+
E4_128 6 4"Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 37
16.5
p- Si:B
n- Si:P
35±10%
12.5±10%
P/N/N+
E4_124 7 4"Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 45
7±1
p- Si:B
n- Si:P
13±10%
12±10%
P/N/N+
E4_144 6 4"Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 45
7
p- Si:B
n- Si:P
14.5±10%
12±10%
P/N/N+
E4_132 8 4"Øx525μm n- Si:As[111] 0.002-0.005 P/E 88
88
p- Si:B
n- Si:P
80.5±10%
27±10%
P/N/N+
E4_145 7 4"Øx380μm n- Si:As[111] 0.002-0.005 P/E 105
26
p- Si:B
n- Si:P
0.0035±10%
5±10%
P/N/N+
E4_122 5 4"Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 10.15
6.8±0.8
n- Si:P
n- Si:P
3.8±0.5
0.55±0.15
N/N/N+
E4_84 9 4"Øx380μm n- Si:As[111] 0.004-0.008 P/EOx 16.5 n- Si:P 35 ±10% N/N+
E4_143 8 4"Øx508μm n- Si:As[111] 0.002-0.005 P/E 19±1.3
54.5±3.6
n- Si:P
n- Si:P
25±5
4.4
N/N/N+
E4_68 9 4"Øx380μm n- Si:As[111] 0.001-0.005 P/EOx 20 n- Si:P 270 ±10% N/N+
E4_90 8 4"Øx400μm n- Si:As[111] 0.001-0.005 P/E 20 n- Si:P 0.09 ±10% N/N+
E4_10 25 4"Øx400μm n- Si:As[111] 0.001-0.005 P/E 20 n- Si:P 90±10% N/N+
E4_89 9 4"Øx400μm n- Si:As[111] 0.001-0.005 P/E 20 n- Si:P 0.07 ±10% N/N+
E4_91 9 4"Øx400μm n- Si:As[111] 0.001-0.005 P/E 20 n- Si:P 0.13 ±10% N/N+
E4_92 11 4"Øx400μm n- Si:As[111] 0.001-0.005 P/E 20 n- Si:P 0.15 ±10% N/N+
E4_93 7 4"Øx400μm n- Si:As[111] 0.001-0.005 P/E 20 n- Si:P 0.19 ±10% N/N+
E4_30 7 4"Øx525μm n- Si:As[111] 0.001-0.005 P/E 20 n- Si:P 65 ±10% N/N+
E4_116 5 4"Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 20
10
n- Si:P
n- Si:P
7±10%
2±0.4
N/N/N+
E4_69 8 4"Øx380μm n- Si:As[111] 0.001-0.005 P/EOx 21 n- Si:P 150 ±10% N/N+
E4_117 11 4"Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 22.5
28.5
n- Si:P
n- Si:P
12±10%
2±10%
N/N/N+
E4_129 9 4"Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 26
11
n- Si:P
n- Si:P
18±10%
2±10%
N/N/N+
E4_54 9 4"Øx525μm n- Si:As[111] 0.001-0.005 P/E 27 n- Si:P 220 ±10% N/N+
E4_52 15 4"Øx525μm n- Si:As[111] 0.001-0.005 P/E 27.5 n- Si:P >250 N/N+
E4_53 9 4"Øx525μm n- Si:As[111] 0.001-0.005 P/E 28 n- Si:P 165 ±10% N/N+
E4_125 14 4"Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 28
8 - 12
n- Si:P
n- Si:P
11±10%
1 - 3
N/N/N+
E4_120 19 4"Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 28
9 - 11
n- Si:P
n- Si:P
8 - 11
1 - 3
N/N/N+
E4_111 20 4"Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 30
15
5
n- Si:P
n- Si:P
n- Si:P
11±10%
4±10%
1.5±10%
N/N/N/N+
E4_123 10 4"Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 39.5
12
n- Si:P
n- Si:P
29±10%
4±10%
N/N/N+
E4_81 20 4"Øx380μm n- Si:As[111] 0.004-0.008 P/EOx 41.5 n- Si:P >300 ±10% N/N+
E4_77 18 4"Øx380μm n- Si:As[111] 0.004-0.008 P/EOx 41.5 n- Si:P >200 N/N+
E4_17 2 4"Øx380μm n- Si:As[111] 0.004-0.008 P/EOx 43 n- Si:P 600 ±10% N/N+
E4_79 8 4"Øx380μm n- Si:As[111] 0.004-0.008 P/EOx 43 n- Si:P >200 N/N+
E4_16 1 4"Øx380μm n- Si:As[111] 0.004-0.008 P/EOx 43 n- Si:P 340 ±10% N/N+
E4_115 6 4"Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 50
15
n- Si:P
n- Si:P
36±4
5.4±0.7
N/N/N+
E4_24 10 4"Øx525μm n- Si:As[111] 0.001-0.005 P/E 75 n- Si:P 66 ±10% N/N+
E4_59 9 4"Øx525μm n- Si:As[111] 0.001-0.005 P/E 78 n- Si:P 25 ±10% N/N+
E4_5 15 4"Øx525μm n- Si:As[111] 0.001-0.005 P/EOx 78 n- Si:P 20 ±10% N/N+
E4_94 5 4"Øx525μm n- Si:As[111] 0.001-0.005 P/E 80 n- Si:P 17.5 ±10% N/N+
E4_112 4 4"Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 80
10
n- Si:P
n- Si:P
60±10%
2±1
N/N/N+
E4_146 7 4"Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 80
10
n- Si:P
n- Si:P
70±10%
2±1
N/N/N+
E4_137 8 4"Øx525μm n- Si:Sb[111] 0.008-0.020 P/E 22.5
15
p- Si:B
n- Si:P
15±10%
6±0.9
P/N/N+
E4_136 7 4"Øx525μm n- Si:Sb[111] 0.008-0.020 P/E 38
18
p- Si:B
n- Si:P
55±10%
10±10%
P/N/N+
E4_9 4 4"Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 14 n- Si:P 4.25 ±10% N/N+
E4_55 4 4"Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 15 n- Si:P 90 ±10% N/N+
E4_27 10 4"Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 18 n- Si:P 0.25 ±10% N/N+
E4_56 6 4"Øx400μm n- Si:Sb[111] 0.005-0.020 P/E 20 n- Si:P 75 ±10% N/N+
E4_57 8 4"Øx400μm n- Si:Sb[111] 0.005-0.020 P/E 20 n- Si:P 136 ±10% N/N+
E4_58 3 4"Øx400μm n- Si:Sb[111] 0.005-0.020 P/E 20 n- Si:P 101 ±10% N/N+
E4_98 5 4"Øx400μm n- Si:Sb[111] 0.006-0.020 P/E 20 n- Si:P 300±10% N/N+
E4_97 9 4"Øx400μm n- Si:Sb[111] 0.006-0.020 P/E 21 n- Si:P 400±10% N/N+
E4_100 15 4"Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 22.5 n- Si:P 12.5±10% N/N+
E4_2 16 4"Øx400μm n- Si:Sb[111] 0.005-0.020 P/E 25 n- Si:P 0.08 ±10% N/N+
E4_14 2 4"Øx400μm n- Si:Sb[111] 0.005-0.020 P/E 25 n- Si:P 0.04 ±10% N/N+
E4_66 5 4"Øx360μm n- Si:Sb[111] 0.005-0.020 P/E 37.5 n- Si:P 270 ±10% N/N+
E4_95 10 4"Øx400μm n- Si:Sb[111] 0.006-0.020 P/E 37.5 n- Si:P 85±10% N/N+
E4_138 4 4"Øx525μm n- Si:Sb[111] 0.008-0.020 P/E 58
15
5
n- Si:P
n- Si:P
n- Si:P
60±10%
8±10%
3±10%
N/N/N/N+
E4_148 9 4"Øx460μm n- Si:Sb[111] 0.007-0.020 P/E 60
20
n- Si:P
n- Si:P
40.5±4.5
10±2
N/N/N+
E4_60 9 4"Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 60 n- Si:P 60 ±10% N/N+
E4_12 10 4"Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 60 n- Si:P 58.75 ±10% N/N+
E4_19 6 4"Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 70 n- Si:P 60 ±10% N/N+
E4_61 9 4"Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 75 n- Si:P 125 ±10% N/N+
E4_44 6 4"Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 100 n- Si:P 420±10% N/N+

3" Epitaxial Silicon Wafers

Item Qty in Stock Substrate EPI Comment
Size Type Res Ωcm Surf. Thick μm Type Res Ωcm
K827 4 3"Øx508μm p- Si:B[111] 0.008-0.020 P/E 12.5
140±10
p- Si:B
n- Si:P
2.35
33.60
p+
8611 50 3"Øx381μm n- Si:As[111-4°] 0.001-0.005 P/E 5.5 n- Si:P 0.31 - 0.33 n/n+
F667 120 3"Øx525μm n- Si:P[111] 0.001-0.005 P/E 4.5 n- Si:P 1.1 - 1.4 n/n+
E3_32 18 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 5.5 n- Si:P 1.06±10% N/N+
E3_40 5 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 11 n- Si:P 17.5±10% N/N+
E3_2 9 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 16±10% N/N+
E3_54 8 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 2.1±10% N/N+
E3_55 12 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 1.7±10% N/N+
E3_24 18 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 1.3±10% N/N+
E3_38 15 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 1.3±10% N/N+
E3_62 14 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 1.8±10% N/N+
E3_30 15 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 13 n- Si:P 1.35±10% N/N+
E3_48 9 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 15.5 n- Si:P 9.5±10% N/N+
E3_22 12 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 15.5 n- Si:P 9.5±10% N/N+
E3_42 4 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 18 n- Si:P 0.05±10% N/N+
E3_3 20 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 22 n- Si:P 4.8±10% N/N+
E3_5 18 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 22 n- Si:P 4±10% N/N+
E3_27 5 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 22 n- Si:P 4±10% N/N+
E3_63 20 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 28 n- Si:P 16.5±10% N/N+
E3_17 6 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 28.5 n- Si:P 4±10% N/N+
E3_25 9 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 28.5 n- Si:P 20±10% N/N+
E3_53 8 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 30 n- Si:P 4.5±10% N/N+
E3_15 15 3"Øx355μm n- Si:As[111] 0.001-0.005 P/E 34 n- Si:P 9.5±10% N/N+
E3_16 15 3"Øx355μm n- Si:As[111] 0.001-0.005 P/E 34 n- Si:P 12±10% N/N+
E3_51 8 3"Øx355μm n- Si:As[111] 0.001-0.005 P/E 34 n- Si:P 11±10% N/N+
E3_4 9 3"Øx355μm n- Si:As[111] 0.001-0.005 P/E 36 n- Si:P 4±10% N/N+
E3_23 5 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 37.5 n- Si:P 0.6±10% N/N+
E3_1 20 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 41 n- Si:P 25±10% N/N+
E3_41 9 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 42 n- Si:P 20.5±10% N/N+
E3_19 18 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 42.5 n- Si:P 17±10% N/N+
E3_14 8 3"Øx355μm n- Si:As[111] 0.001-0.005 P/E 52.5 n- Si:P 12.5±10% N/N+
E3_56 19 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 56 n- Si:P 12±10% N/N+
E3_45 8 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 70 n- Si:P 73±10% N/N+
E3_33 10 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 72 n- Si:P 12.5±10% N/N+
E3_7 19 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 73 n- Si:P 84±10% N/N+
E3_44 8 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 75 n- Si:P 13±10% N/N+
E3_49 18 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 75 n- Si:P 11±10% N/N+
E3_12 8 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 80 n- Si:P 12±10% N/N+
E3_10 15 3"Øx375μm n- Si:As[111] 0.001-0.005 P/E 85 n- Si:P 22.5 ±10% N/N+
E3_34 10 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 85 n- Si:P 19.5±10% N/N+
E3_20 20 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 85 n- Si:P 66±10% N/N+
E3_59 18 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 90
18
n- Si:P
n- Si:P
41±10%
5±10%
N/N/N+
E3_43 18 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 96 n- Si:P 30±10% N/N+
E3_11 19 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 100 n- Si:P 16 ±10% N/N+
E3_13 2 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 100 n- Si:P 12±10% N/N+
E3_21 10 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 100 n- Si:P 20±10% N/N+
E3_8 5 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 100 n- Si:P 21±10% N/N+
E3_37 14 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 135 n- Si:P 35±10% N/N+
E3_39 4 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 140 n- Si:P 31±10% N/N+
E3_29 10 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 145 n- Si:P 38±10% N/N+
E3_26 18 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 145 n- Si:P 25±10% N/N+
E3_9 3 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 150 n- Si:P 44±10% N/N+
E3_28 15 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 158 n- Si:P 67±10% N/N+
E3_31 10 3"Øx381μm n- Si:Sb[111] 0.005-0.020 P/E 8 n- Si:P 0.63±10% N/N+
E3_35 15 3"Øx381μm n- Si:Sb[111] 0.005-0.020 P/E 22.5 n- Si:P 0.07±10% N/N+
E3_6 12 3"Øx381μm n- Si:Sb[111] 0.005-0.020 P/E 30 n- Si:P 6.75±10% N/N+
E3_64 10 3"Øx330μm n- Si:Sb[111] 0.005-0.018 P/E 75
25
n- Si:P
n- Si:P
40±10%
2.5±10%
N/N/N+


100mm P/B (100) 525μm 0.008-0.020 ohm-cm DSP
100±10 N/PHn 40 - 60 ohm-cm n/p+, Back-side polished after Epi deposition
certificate available

100mm P/B (111) 400μm .01-0.10 ohm-cm SSP
6.522±1.5 p- Si:B p- Si:B .6±10% 300±50 P/P/P+

76.2mm N/As (111) 0.001-0.005 ohm-cm SSP
75 n- Si:P 11±10% N/N+