Thick Silicon Wafers Research & Production in Stock

University Wafer Silicon Wafers and Semicondcutor Substrates Services
University Silicon Wafer for Production

Why is Silicon Wafer Thickness Important?

A Silicon Wafer's thickness influences the wafer's mechanical properties. The thickness is expressed in microns.

Recent advancements in wafer fabricating technology for IC have seen silicon wafer thicknesses of greater than 20mm.

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We have the following Thick Silicon Wafers

Below are just some of the thick silicon wafers that we have in stock. Please let us know what you can use or if you need another thickness and or wafer specification.

6 Inch (150mm) Thick Silicon Wafers

Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that surface); Material - CZ unless noted
Note: Items sold in quantities of 25, unless noted
Item Qty in Material Orient. Diam. Thck Surf. Resistivity Comment  
Stock (μm) Ωcm  
K667 2 p-type Si:B [100] 6" 900 C/C FZ >1,000 SEMI Prime, 1Flat (57.5mm)  
7038 13 p-type Si:B [111] ±0.5° 6" 875 P/E FZ >10,000 SEMI notch Prime Lifetime>1,000μs  
6898 10 p-type Si:B [111] ±0.5° 6" 1,000 P/E FZ >5,000 SEMI Prime, 1Flat (57.5mm)  
7208 25 n-type Si:P [100] ±1° 6" 1,000 ±50 P/P FZ >9,500 SEMI Prime, 1Flat (57.5mm), Lifetime>6,000μs  
E239 1 n-type Si:P [100] 6" 825 C/C FZ 7,000-8,000 {7,025-7,856} SEMI, 1Flat, Lifetime=7,562μs, in Open Empak cst  
F907 3 n-type Si:P [100] 6" 3,000 P/P FZ >4,800 SEMI Prime, 1Flat (57.5mm), Individual cst, Lifetime>7,000μs.  
7053 16 n-type Si:P [100] 6" 2,000 P/P FZ 50-70 SEMI Prime, 1Flat (57.5mm), Cassettes of 10 + 6 wafers  
S5622 14 n-type Si:P [100] 6" 1,300 ±10 E/E FZ 0.01-0.05 SEMI notch, Empak cst  
N445 7 n-type Si:P [112-5.0° towards[11-1]] ±0.5° 6" 875 ±10 E/E FZ >3,000 SEMI, 1Flat (47.5mm), TTV<4μm, Surface Chips  
G343 25 n-type Si:P [112-5° towards[11-1]] ±0.5° 6" 1,000 ±10 C/C FZ >3,000 SEMI, 1 JEIDA Flat (47.5mm), Empak cst, TTV<4μm, Lifetime>1,000μs  
L405 4 p-type Si:B [100] 6" 1,000 P/P 10-15 SEMI Prime, 1Flat (57.5mm), Empak cst, 4 Prime wafers plus 2 scratched wafers at no cost  
7066 159 p-type Si:B [100] 6" 675 P/P 5-10 SEMI Prime, 1Flat (57.5mm), Empak cst  
6287 20 p-type Si:B [100] 6" 675 P/E 5-10 SEMI Prime, 1Flat (57.5mm), Empak cst  
6751 25 p-type Si:B [100] 6" 1,000 P/E 5-10 SEMI Prime, 1Flat (57.5mm), Empak cst  
7030 100 p-type Si:B [100] 6" 1,000 P/E 5-10 SEMI Prime, 1Flat (57.5mm), Empak cst  
F162 6 p-type Si:B [100] 6" 2,000 ±50 P/P 1-35 SEMI Prime, 1Flat (57.5mm), Individual cst, Group of 6 wafers  
5814 202 n-type Si:P [100] 6" 925 ±15 E/E 5-35 {12.5-29.7} JEIDA Prime, Empak cst, TTV<5μm  
F089 4 n-type Si:P [100] 6" 1,910 ±10 P/P 1-100 SEMI Prime, 1Flat (57.5mm), TTV<5μm, sealed in stacked trays of 1 + 3 wafer  
G844 3 n-type Si:P [100] 6" 5,000 P/P 1-35 SEMI Prime, 1Flat (57.5mm), Individual cst  
E682 2 n-type Si:P [100] 6" 1,280 P/P 10-35 SEMI notch Prime, Empak cst  
F509 8 n-type Si:P [100] 6" 650 P/P 5-35 SEMI Prime, 1Flat (57.5mm), Empak cst  
E324 200 n-type Si:P [100] 6" 725 P/P 5-35 SEMI Prime, 1 SEMI Flat(57.5mm), TTV<2μm, TIR<1μm, Bow<10μm, Warp<20μm, Wafers await final polished, Empak cst  
S5861 21 n-type Si:P [100] 6" 675 ±15 P/E 3-10 SEMI Prime, 1Flat (57.5mm), Empak cst  
S5781 10 n-type Si:P [100] 6" 675 P/E 2.7-4.0 SEMI Prime, 1Flat, Empak cst  
E556 8 n-type Si:P [100] 6" 475 P/P 1-100 SEMI, 1Flat (57.5mm), TTV<5μm, Bow/Warp<15μm, with LM, Empak cst  
G089 5 n-type Si:P [100] 6" 1,875 P/P 1-100 SEMI Prime, 1Flat (57.5mm), TTV<3μm, in stacked trays of 5 wafers  
Q872 5 n-type Si:P [100] 6" 3,000 P/P 1-100 SEMI Prime, 1Flat (57.5mm), Individual cst, Group of 5 wafer  
H844 1 n-type Si:P [100] 6" 5,000±50μm P/P 1-35 SEMI Prime, 1Flat (57.5mm), Individual cst  

4 Inch (100mm) Thick Silicon Wafers

Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that surface); Material - CZ unless noted
Note: Items sold in quantities of 25, unless noted
Item Qty in Material Orient. Diam. Thck Surf. Resistivity Comment  
Stock (μm) Ωcm  
7178 25 p-type Si:B [100] 4" 1,000 P/P FZ >1,500 SEMI Prime, 2Flats, Empak cst  
5731 20 n-type Si:P [112-3° towards[11-1]] ±0.5° 4" 762 P/P FZ >100 SEMI Prime, 1Flat, Empak cst  
S5767 38 n-type Si:P [112-5° towards[11-1]] ±0.5° 4" 762 P/P FZ ~100 SEMI Prime, 1Flat, Empak cst, TTV<3μm  
5739 5 n-type Si:P [112-5° towards[11-1]] ±0.5° 4" 765 P/P FZ ~100 SEMI Prime, 1Flat, Empak cst, TTV<3μm  
B987 11 n-type Si:P [112-5° towards[11-1]] ±0.5° 4" 795 E/E FZ >100 SEMI, 1Flat, in Empak, TTV<4μm, Lifetime>2,000μs  
6847 75 Intrinsic Si:- [100] 4" 1,000 P/P FZ >20,000 SEMI Prime, 1Flat, Empak cst  
H775 11 p-type Si:B [110] ±0.5° 4" 1,650 P/E 10--15 SEMI Prime, 1Flat, Individual cst  
F153 6 p-type Si:B [100] 4" 3,000 P/P 10--20 SEMI Prime, 1Flat, Individual cst  
F986 15 p-type Si:B [100] 4" 1,600 P/P ~6 SEMI Prime, 1Flat, Individual cst, Groups of 5 + 15 wafers  
4829 15 p-type Si:B [100] 4" 2,100 P/E 1-100 SEMI Prime, 1Flat, Individual cst, Groups of 5 wafers  
D594 5 p-type Si:B [100] 4" 3,175 P/P 1--10 SEMI Prime, 2Flats, Individual cst, TTV<8μm  
6952 4 p-type Si:B [100] 4" 3,100 P/P 0.006-0.009 SEMI Prime, 2Flats, Individual cst, Group of 4 wafers  

3 Inch (76.2mm) Thick Silicon Wafers

Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that surface); Material - CZ unless noted
Note: Items sold in quantities of 25, unless noted
Item Qty in Material Orient. Diam. Thck Surf. Resistivity Comment  
Stock (μm) Ωcm  
S5610 15 p-type Si:B [100] 3" 890 ±13 P/P FZ 0.5-10.0 SEMI, Empak cst, TTV<8μm  
7059 43 n-type Si:P [100] 3" 850 P/E FZ 40-140 SEMI Prime, 2Flats, Empak cst  
5754 9 n-type Si:P [211] ±0.5° 3" 1,016 P/P FZ 25-75 Prime, 1Flat, Empak cst  
3273 50 n-type Si:P [111] ±0.5° 3" 1,000 P/E FZ >5,000 SEMI Prime, 2Flats, Empak cst  
6101 1 Intrinsic Si:- [100] 3" 4,000 P/P FZ >8,000 Test, Scratched, 1Flat, Individual cst  
D048 1 Intrinsic Si:- [111] ±0.5° 3" 1,975 P/P FZ >20,000 Test, NO Flats, Individual cst, Scratches on both sides  
J056 3 p-type Si:B [100] 3" 3,000 P/P 4--6 Prime, NO Flats, Group of 3 wafers  
K056 3 p-type Si:B [100] 3" 5,000 P/E 1--20 Prime, NO Flats, Individual cst  
6949 8 p-type Si:B [111] 3" 2,300 P/P 4--7 SEMI Prime, 1Flat, Individual cst  
G046 50 n-type Si:P [510] ±0.5° 3" 1,000 P/E 5--10 Prime, NO Flats, Empak cst  
S5580 5 n-type Si:P [100] ±1° 3" 2,286 ±13 P/P 15-28 SEMI Prime, 1Flat, TTV<1μm, Sealed in individual csts, in groups of 5 wafers  
6366 13 n-type Si:P [100] 3" 1,500 P/E 5--7 SEMI Prime, 2Flats, Empak cst  
6308 8 n-type Si:P [100] 3" 6,000 P/E 1--20 SEMI Prime, 1Flat, Individual cst< In sealed group of 8 wafers  
5721 29 n-type Si:P [111] ±0.5° 3" 1,500 P/P 31-35 SEMI Prime, 1Flat, Empak cst, Cassettes of 10 + 10 + 9 wafers  
1263 5 n-type Si:P [111] ±0.5° 3" 1,400 P/E 25-35 SEMI Prime, 1Flat, in single wafer cassettes, sealed in groups of 5  
H136 2 n-type Si:P [111] 3" 10,000 P/E 20-60 SEMI Prime, 1Flat, Individual cst  
6198 5 n-type Si:P [111] 3" 3,000 P/E 10--20 SEMI Prime, 2Flats, Individual cst, Groups of 2 + 3 wafers  
E206 100 n-type Si:P [111-5° towards[110]] ±0.25° 3" 1,000 P/E >5 SEMI Prime, 1Flat, hard cst  
G206 19 n-type Si:P [111-5° towards[110]] ±0.25° 3" 1,000 P/E >5 SEMI Prime, 1Flat, in hard cassettes of 6, 6 & 7 wafers  
1207 25 n-type Si:P [111-5° towards[110]] ±0.25° 3" 1,300 P/E >5 SEMI Prime, 1Flat, hard cst  
S5804 25 n-type Si:P [111-0.5° towards[110]] ±0.25° 3" 1,400 E/E >5 SEMI, 1Flat, LaserMark, in opened hard cast  

2 Inch (50.8mm) Thick Silicon Wafers

Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that surface); Material - CZ unless noted
Note: Items sold in quantities of 25, unless noted
Item Qty in Material Orient. Diam. Thck Surf. Resistivity Comment  
Stock (μm) Ωcm  
D769 8 p--type Si:B [111] ±0.5° 2" 500 P/P FZ 5,000--6,500 SEMI Test (in unsealed cassette), 1Flat  
2894 13 n--type Si:P [110] 2" 900 P/E FZ 130--350 SEMI Prime, 1Flat, hard cst  
4032 8 n--type Si:P [110] ±0.5° 2" 900 P/E FZ 50--100 SEMI Prime, hard cst, Primary Flat only at [111]±0.5°  
6187 75 p--type Si:B [100] 2" 1,000 P/E 1--10 SEMI Prime, 2Flats, hard cst  
U206 59 p--type Si:B [100] 2" 3,150 C/C >0.5 1Flat  
5918 16 p--type Si:B [100] 2" 3,000 P/E 0.015--0.020 Groups of 5 + 5 + 6 wafers, Test, 2Flats, Individual cst, Wafers with defects  
6563 6 n--type Si:P [100] 2" 3,175 P/E 1--3 Prime, NO Flats, Individual cst  
4333 5 n--type Si:P [100] ±1.0° 2" 6,000 P/E 1--10 SEMI Prime, 2Flats, Individual cst  
4501 2 n--type Si:As [100] 2" 7,050 P/E 0.0031--0.0038 SEMI Prime, 2Flats, Individual cst Group of 2 wafers  
5238 6 n--type Si:P [111] 2" 5,000 P/E 15--20 SEMI Prime, 1Flat, Individual cst, (group of 6 wafers)  
4878 1 n--type Si:P [111] ±0.5° 2" 6,000 P/E 1--10 SEMI Prime, 1Flat, Individual cst  
4958 5 n--type Si:Sb [111] 2" 2,900 P/P 0.013--0.015 Prime, NO Flats, Individual cst, Group of 5 wafers