Thick Silicon Wafers Research & Production in Stock

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We have the following Thick Silicon Wafers

6 Inch (150mm) Thick Silicon Wafers

Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that surface); Material - CZ unless noted
Note: Items sold in quantities of 25, unless noted
Item	Qty in	Material	Orient.	Diam.	Thck	Surf.	Resistivity	Comment
	Stock				(μm)		Ωcm
K667	2	p-type Si:B	[100]	6"	900	C/C	FZ >1,000	SEMI Prime, 1Flat (57.5mm)
7038	13	p-type Si:B	[111] ±0.5°	6"	875	P/E	FZ >10,000	SEMI notch Prime Lifetime>1,000μs
6898	10	p-type Si:B	[111] ±0.5°	6"	1,000	P/E	FZ >5,000	SEMI Prime, 1Flat (57.5mm)
7208	25	n-type Si:P	[100] ±1°	6"	1,000 ±50	P/P	FZ >9,500	SEMI Prime, 1Flat (57.5mm), Lifetime>6,000μs
E239	1	n-type Si:P	[100]	6"	825	C/C	FZ 7,000-8,000 {7,025-7,856}	SEMI, 1Flat, Lifetime=7,562μs, in Open Empak cst
F907	3	n-type Si:P	[100]	6"	3,000	P/P	FZ >4,800	SEMI Prime, 1Flat (57.5mm), Individual cst, Lifetime>7,000μs.
7053	16	n-type Si:P	[100]	6"	2,000	P/P	FZ 50-70	SEMI Prime, 1Flat (57.5mm), Cassettes of 10 + 6 wafers
S5622	14	n-type Si:P	[100]	6"	1,300 ±10	E/E	FZ 0.01-0.05	SEMI notch, Empak cst
N445	7	n-type Si:P	[112-5.0° towards[11-1]] ±0.5°	6"	875 ±10	E/E	FZ >3,000	SEMI, 1Flat (47.5mm), TTV<4μm, Surface Chips
G343	25	n-type Si:P	[112-5° towards[11-1]] ±0.5°	6"	1,000 ±10	C/C	FZ >3,000	SEMI, 1 JEIDA Flat (47.5mm), Empak cst, TTV<4μm, Lifetime>1,000μs
L405	4	p-type Si:B	[100]	6"	1,000	P/P	15-Oct	SEMI Prime, 1Flat (57.5mm), Empak cst, 4 Prime wafers plus 2 scratched wafers at no cost
7066	159	p-type Si:B	[100]	6"	675	P/P	10-May	SEMI Prime, 1Flat (57.5mm), Empak cst
6287	20	p-type Si:B	[100]	6"	675	P/E	10-May	SEMI Prime, 1Flat (57.5mm), Empak cst
6751	25	p-type Si:B	[100]	6"	1,000	P/E	10-May	SEMI Prime, 1Flat (57.5mm), Empak cst
7030	100	p-type Si:B	[100]	6"	1,000	P/E	10-May	SEMI Prime, 1Flat (57.5mm), Empak cst
F162	6	p-type Si:B	[100]	6"	2,000 ±50	P/P	Jan-35	SEMI Prime, 1Flat (57.5mm), Individual cst, Group of 6 wafers
5814	202	n-type Si:P	[100]	6"	925 ±15	E/E	5-35 {12.5-29.7}	JEIDA Prime, Empak cst, TTV<5μm
F089	4	n-type Si:P	[100]	6"	1,910 ±10	P/P	1-100	SEMI Prime, 1Flat (57.5mm), TTV<5μm, sealed in stacked trays of 1 + 3 wafer
G844	3	n-type Si:P	[100]	6"	5,000	P/P	Jan-35	SEMI Prime, 1Flat (57.5mm), Individual cst
E682	2	n-type Si:P	[100]	6"	1,280	P/P	Oct-35	SEMI notch Prime, Empak cst
F509	8	n-type Si:P	[100]	6"	650	P/P	May-35	SEMI Prime, 1Flat (57.5mm), Empak cst
E324	200	n-type Si:P	[100]	6"	725	P/P	May-35	SEMI Prime, 1 SEMI Flat(57.5mm), TTV<2μm, TIR<1μm, Bow<10μm, Warp<20μm, Wafers await final polished, Empak cst
S5861	21	n-type Si:P	[100]	6"	675 ±15	P/E	10-Mar	SEMI Prime, 1Flat (57.5mm), Empak cst
S5781	10	n-type Si:P	[100]	6"	675	P/E	2.7-4.0	SEMI Prime, 1Flat, Empak cst
E556	8	n-type Si:P	[100]	6"	475	P/P	1-100	SEMI, 1Flat (57.5mm), TTV<5μm, Bow/Warp<15μm, with LM, Empak cst
G089	5	n-type Si:P	[100]	6"	1,875	P/P	1-100	SEMI Prime, 1Flat (57.5mm), TTV<3μm, in stacked trays of 5 wafers
Q872	5	n-type Si:P	[100]	6"	3,000	P/P	1-100	SEMI Prime, 1Flat (57.5mm), Individual cst, Group of 5 wafer
H844	1	n-type Si:P	[100]	6"	5,000±50μm	P/P	Jan-35	SEMI Prime, 1Flat (57.5mm), Individual cst

4 Inch (100mm) Thick Silicon Wafers

Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that surface); Material - CZ unless noted
Note: Items sold in quantities of 25, unless noted
Item	Qty in	Material	Orient.	Diam.	Thck	Surf.	Resistivity	Comment
	Stock				(μm)		Ωcm
7178	25	p-type Si:B	[100]	4"	1,000	P/P	FZ >1,500	SEMI Prime, 2Flats, Empak cst
5731	20	n-type Si:P	[112-3° towards[11-1]] ±0.5°	4"	762	P/P	FZ >100	SEMI Prime, 1Flat, Empak cst
S5767	38	n-type Si:P	[112-5° towards[11-1]] ±0.5°	4"	762	P/P	FZ ~100	SEMI Prime, 1Flat, Empak cst, TTV<3μm
5739	5	n-type Si:P	[112-5° towards[11-1]] ±0.5°	4"	765	P/P	FZ ~100	SEMI Prime, 1Flat, Empak cst, TTV<3μm
B987	11	n-type Si:P	[112-5° towards[11-1]] ±0.5°	4"	795	E/E	FZ >100	SEMI, 1Flat, in Empak, TTV<4μm, Lifetime>2,000μs
6847	75	Intrinsic Si:-	[100]	4"	1,000	P/P	FZ >20,000	SEMI Prime, 1Flat, Empak cst
H775	11	p-type Si:B	[110] ±0.5°	4"	1,650	P/E	10--15	SEMI Prime, 1Flat, Individual cst
F153	6	p-type Si:B	[100]	4"	3,000	P/P	10--20	SEMI Prime, 1Flat, Individual cst
F986	15	p-type Si:B	[100]	4"	1,600	P/P	~6	SEMI Prime, 1Flat, Individual cst, Groups of 5 + 15 wafers
4829	15	p-type Si:B	[100]	4"	2,100	P/E	1-100	SEMI Prime, 1Flat, Individual cst, Groups of 5 wafers
D594	5	p-type Si:B	[100]	4"	3,175	P/P	1--10	SEMI Prime, 2Flats, Individual cst, TTV<8μm
6952	4	p-type Si:B	[100]	4"	3,100	P/P	0.006-0.009	SEMI Prime, 2Flats, Individual cst, Group of 4 wafers

3 Inch (76.2mm) Thick Silicon Wafers

Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that surface); Material - CZ unless noted
Note: Items sold in quantities of 25, unless noted
Item	Qty in	Material	Orient.	Diam.	Thck	Surf.	Resistivity	Comment
	Stock				(μm)		Ωcm
S5610	15	p-type Si:B	[100]	3"	890 ±13	P/P	FZ 0.5-10.0	SEMI, Empak cst, TTV<8μm
7059	43	n-type Si:P	[100]	3"	850	P/E	FZ 40-140	SEMI Prime, 2Flats, Empak cst
5754	9	n-type Si:P	[211] ±0.5°	3"	1,016	P/P	FZ 25-75	Prime, 1Flat, Empak cst
3273	50	n-type Si:P	[111] ±0.5°	3"	1,000	P/E	FZ >5,000	SEMI Prime, 2Flats, Empak cst
6101	1	Intrinsic Si:-	[100]	3"	4,000	P/P	FZ >8,000	Test, Scratched, 1Flat, Individual cst
D048	1	Intrinsic Si:-	[111] ±0.5°	3"	1,975	P/P	FZ >20,000	Test, NO Flats, Individual cst, Scratches on both sides
J056	3	p-type Si:B	[100]	3"	3,000	P/P	4--6	Prime, NO Flats, Group of 3 wafers
K056	3	p-type Si:B	[100]	3"	5,000	P/E	1--20	Prime, NO Flats, Individual cst
6949	8	p-type Si:B	[111]	3"	2,300	P/P	4--7	SEMI Prime, 1Flat, Individual cst
G046	50	n-type Si:P	[510] ±0.5°	3"	1,000	P/E	5--10	Prime, NO Flats, Empak cst
S5580	5	n-type Si:P	[100] ±1°	3"	2,286 ±13	P/P	15-28	SEMI Prime, 1Flat, TTV<1μm, Sealed in individual csts, in groups of 5 wafers
6366	13	n-type Si:P	[100]	3"	1,500	P/E	5--7	SEMI Prime, 2Flats, Empak cst
6308	8	n-type Si:P	[100]	3"	6,000	P/E	1--20	SEMI Prime, 1Flat, Individual cst< In sealed group of 8 wafers
5721	29	n-type Si:P	[111] ±0.5°	3"	1,500	P/P	31-35	SEMI Prime, 1Flat, Empak cst, Cassettes of 10 + 10 + 9 wafers
1263	5	n-type Si:P	[111] ±0.5°	3"	1,400	P/E	25-35	SEMI Prime, 1Flat, in single wafer cassettes, sealed in groups of 5
H136	2	n-type Si:P	[111]	3"	10,000	P/E	20-60	SEMI Prime, 1Flat, Individual cst
6198	5	n-type Si:P	[111]	3"	3,000	P/E	10--20	SEMI Prime, 2Flats, Individual cst, Groups of 2 + 3 wafers
E206	100	n-type Si:P	[111-5° towards[110]] ±0.25°	3"	1,000	P/E	>5	SEMI Prime, 1Flat, hard cst
G206	19	n-type Si:P	[111-5° towards[110]] ±0.25°	3"	1,000	P/E	>5	SEMI Prime, 1Flat, in hard cassettes of 6, 6 & 7 wafers
1207	25	n-type Si:P	[111-5° towards[110]] ±0.25°	3"	1,300	P/E	>5	SEMI Prime, 1Flat, hard cst
S5804	25	n-type Si:P	[111-0.5° towards[110]] ±0.25°	3"	1,400	E/E	>5	SEMI, 1Flat, LaserMark, in opened hard cast

2 Inch (50.8mm) Thick Silicon Wafers

Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that surface); Material - CZ unless noted
Note: Items sold in quantities of 25, unless noted
Item	Qty in	Material	Orient.	Diam.	Thck	Surf.	Resistivity	Comment
	Stock				(μm)		Ωcm
D769	8	p--type Si:B	[111] ±0.5°	2"	500	P/P	FZ 5,000--6,500	SEMI Test (in unsealed cassette), 1Flat
2894	13	n--type Si:P	[110]	2"	900	P/E	FZ 130--350	SEMI Prime, 1Flat, hard cst
4032	8	n--type Si:P	[110] ±0.5°	2"	900	P/E	FZ 50--100	SEMI Prime, hard cst, Primary Flat only at [111]±0.5°
6187	75	p--type Si:B	[100]	2"	1,000	P/E	1--10	SEMI Prime, 2Flats, hard cst
U206	59	p--type Si:B	[100]	2"	3,150	C/C	>0.5	1Flat
5918	16	p--type Si:B	[100]	2"	3,000	P/E	0.015--0.020	Groups of 5 + 5 + 6 wafers, Test, 2Flats, Individual cst, Wafers with defects
6563	6	n--type Si:P	[100]	2"	3,175	P/E	1--3	Prime, NO Flats, Individual cst
4333	5	n--type Si:P	[100] ±1.0°	2"	6,000	P/E	1--10	SEMI Prime, 2Flats, Individual cst
4501	2	n--type Si:As	[100]	2"	7,050	P/E	0.0031--0.0038	SEMI Prime, 2Flats, Individual cst Group of 2 wafers
5238	6	n--type Si:P	[111]	2"	5,000	P/E	15--20	SEMI Prime, 1Flat, Individual cst, (group of 6 wafers)
4878	1	n--type Si:P	[111] ±0.5°	2"	6,000	P/E	1--10	SEMI Prime, 1Flat, Individual cst
4958	5	n--type Si:Sb	[111]	2"	2,900	P/P	0.013--0.015	Prime, NO Flats, Individual cst, Group of 5 wafers