Thick Silicon Wafers Research & Production in Stock

Why is Silicon Wafer Thickness Important?

A Silicon Wafer's thickness influences the wafer's mechanical properties. The thickness is expressed in microns.

Recent advancements in wafer fabricating technology for IC have seen silicon wafer thicknesses of greater than 20mm.

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Thick Silicon Wafers for Research

Reseacher:

Would you mind helping us out with a thick wafer we're after? Do you have any Si or glass (can be any type of glass, quartz, fused silica, etc.) wafer that fits the following description. Or possibly you can fabricate it? Diameter: => 25 mm Thickness: => 7 mm Polish: electronics/prime grade polish on one or both sides (<1 nm)

UniversityWafer Quoted:

Diameter: => 50.8 mm Thickness: => 7 mm Polish: electronics/prime grade SSP (<1 nm)

Price $Call for pricing

Thick Silicon for Lossy Mirror

Researcher:

I am looking for thick silicon wafer of 4" diameter and thickness of 5 to 10mm. We want to use it as a lossy mirror for 800nm laser, so at least one surface should be polished. The doping of wafer is not critical for our use. If you have something like this, will you please send me a quote for 1 and 5 pieces?

UniversityWafer, Inc. Quoted:

We quoted the following:

1. thick silicon wafer of 4" diameter,thickness of 05mm,use it as a lossy mirror for 800nm laser,one surface polished. The doping of wafer is not critical

Price depends on quantity

2. thick silicon wafer of 4" diameter,thickness of 10mm,use it as a lossy mirror for 800nm laser,one surface polished. The doping of wafer is not critical

Price depends on quantity

We have the following Thick Silicon Wafers

Below are just some of the thick silicon wafers that we have in stock. Please let us know what you can use or if you need another thickness and or wafer specification.

6 Inch (150mm) Thick Silicon Wafers

Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that surface); Material - CZ unless noted
Note: Items sold in quantities of 25, unless noted
Item	Material	Orient.	Diam.	Thck(μm)	Surf.	Res Ωcm	Comment
K667	P/B	[100]	6"	900	C/C	FZ >1,000	SEMI Prime, 1Flat (57.5mm)
7038	P/B	[111] ±0.5°	6"	875	P/E	FZ >10,000	SEMI notch Prime Lifetime>1,000μs
6898	P/B	[111] ±0.5°	6"	1,000	P/E	FZ >5,000	SEMI Prime, 1Flat (57.5mm)
7208	n-type Si:P	[100] ±1°	6"	1,000 ±50	P/P	FZ >9,500	SEMI Prime, 1Flat (57.5mm), Lifetime>6,000μs
E239	n-type Si:P	[100]	6"	825	C/C	FZ 7,000-8,000 {7,025-7,856}	SEMI, 1Flat, Lifetime=7,562μs, in Open Empak cst
F907	n-type Si:P	[100]	6"	3,000	P/P	FZ >4,800	SEMI Prime, 1Flat (57.5mm), Individual cst, Lifetime>7,000μs.
7053	n-type Si:P	[100]	6"	2,000	P/P	FZ 50-70	SEMI Prime, 1Flat (57.5mm), Cassettes of 10 + 6 wafers
S5622	n-type Si:P	[100]	6"	1,300 ±10	E/E	FZ 0.01-0.05	SEMI notch, Empak cst
N445	n-type Si:P	[112-5.0° towards[11-1]] ±0.5°	6"	875 ±10	E/E	FZ >3,000	SEMI, 1Flat (47.5mm), TTV<4μm, Surface Chips
G343	n-type Si:P	[112-5° towards[11-1]] ±0.5°	6"	1,000 ±10	C/C	FZ >3,000	SEMI, 1 JEIDA Flat (47.5mm), Empak cst, TTV<4μm, Lifetime>1,000μs
L405	P/B	[100]	6"	1,000	P/P	10-15	SEMI Prime, 1Flat (57.5mm), Empak cst, 4 Prime wafers plus 2 scratched wafers at no cost
7066	P/B	[100]	6"	675	P/P	5-10	SEMI Prime, 1Flat (57.5mm), Empak cst
6287	P/B	[100]	6"	675	P/E	5-10	SEMI Prime, 1Flat (57.5mm), Empak cst
6751	P/B	[100]	6"	1,000	P/E	5-10	SEMI Prime, 1Flat (57.5mm), Empak cst
7030	P/B	[100]	6"	1,000	P/E	5-10	SEMI Prime, 1Flat (57.5mm), Empak cst
F162	P/B	[100]	6"	2,000 ±50	P/P	1-35	SEMI Prime, 1Flat (57.5mm), Individual cst, Group of 6 wafers
5814	n-type Si:P	[100]	6"	925 ±15	E/E	5-35 {12.5-29.7}	JEIDA Prime, Empak cst, TTV<5μm
F089	n-type Si:P	[100]	6"	1,910 ±10	P/P	1-100	SEMI Prime, 1Flat (57.5mm), TTV<5μm, sealed in stacked trays of 1 + 3 wafer
G844	n-type Si:P	[100]	6"	5,000	P/P	1-35	SEMI Prime, 1Flat (57.5mm), Individual cst
E682	n-type Si:P	[100]	6"	1,280	P/P	10-35	SEMI notch Prime, Empak cst
F509	n-type Si:P	[100]	6"	650	P/P	5-35	SEMI Prime, 1Flat (57.5mm), Empak cst
E324	n-type Si:P	[100]	6"	725	P/P	5-35	SEMI Prime, 1 SEMI Flat(57.5mm), TTV<2μm, TIR<1μm, Bow<10μm, Warp<20μm, Wafers await final polished, Empak cst
S5861	n-type Si:P	[100]	6"	675 ±15	P/E	3-10	SEMI Prime, 1Flat (57.5mm), Empak cst
S5781	n-type Si:P	[100]	6"	675	P/E	2.7-4.0	SEMI Prime, 1Flat, Empak cst
E556	n-type Si:P	[100]	6"	475	P/P	1-100	SEMI, 1Flat (57.5mm), TTV<5μm, Bow/Warp<15μm, with LM, Empak cst
G089	n-type Si:P	[100]	6"	1,875	P/P	1-100	SEMI Prime, 1Flat (57.5mm), TTV<3μm, in stacked trays of 5 wafers
Q872	n-type Si:P	[100]	6"	3,000	P/P	1-100	SEMI Prime, 1Flat (57.5mm), Individual cst, Group of 5 wafer
H844	n-type Si:P	[100]	6"	5,000±50μm	P/P	1-35	SEMI Prime, 1Flat (57.5mm), Individual cst

4 Inch (100mm) Thick Silicon Wafers

Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that surface); Material - CZ unless noted
Note: Items sold in quantities of 25, unless noted
Item	Material	Orient.	Diam.	Thck(μm)	Surf.	Res Ωcm	Comment
7178	P/B	[100]	4"	1,000	P/P	FZ >1,500	SEMI Prime, 2Flats, Empak cst
5731	n-type Si:P	[112-3° towards[11-1]] ±0.5°	4"	762	P/P	FZ >100	SEMI Prime, 1Flat, Empak cst
S5767	n-type Si:P	[112-5° towards[11-1]] ±0.5°	4"	762	P/P	FZ ~100	SEMI Prime, 1Flat, Empak cst, TTV<3μm
5739	n-type Si:P	[112-5° towards[11-1]] ±0.5°	4"	765	P/P	FZ ~100	SEMI Prime, 1Flat, Empak cst, TTV<3μm
B987	n-type Si:P	[112-5° towards[11-1]] ±0.5°	4"	795	E/E	FZ >100	SEMI, 1Flat, in Empak, TTV<4μm, Lifetime>2,000μs
6847	Intrinsic Si:-	[100]	4"	1,000	P/P	FZ >20,000	SEMI Prime, 1Flat, Empak cst
H775	P/B	[110] ±0.5°	4"	1,650	P/E	10-15	SEMI Prime, 1Flat, Individual cst
F153	P/B	[100]	4"	3,000	P/P	10-20	SEMI Prime, 1Flat, Individual cst
F986	P/B	[100]	4"	1,600	P/P	~6	SEMI Prime, 1Flat, Individual cst, Groups of 5 + 15 wafers
4829	P/B	[100]	4"	2,100	P/E	1-100	SEMI Prime, 1Flat, Individual cst, Groups of 5 wafers
D594	P/B	[100]	4"	3,175	P/P	1-10	SEMI Prime, 2Flats, Individual cst, TTV<8μm
6952	P/B	[100]	4"	3,100	P/P	0.006-0.009	SEMI Prime, 2Flats, Individual cst, Group of 4 wafers

3 Inch (76.2mm) Thick Silicon Wafers

Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that surface); Material - CZ unless noted
Note: Items sold in quantities of 25, unless noted
Item	Material	Orient.	Diam.	Thck(μm)	Surf.	Res Ωcm	Comment
S5610	P/B	[100]	3"	890 ±13	P/P	FZ 0.5-10.0	SEMI, Empak cst, TTV<8μm
7059	n-type Si:P	[100]	3"	850	P/E	FZ 40-140	SEMI Prime, 2Flats, Empak cst
5754	n-type Si:P	[211] ±0.5°	3"	1,016	P/P	FZ 25-75	Prime, 1Flat, Empak cst
3273	n-type Si:P	[111] ±0.5°	3"	1,000	P/E	FZ >5,000	SEMI Prime, 2Flats, Empak cst
6101	Intrinsic Si:-	[100]	3"	4,000	P/P	FZ >8,000	Test, Scratched, 1Flat, Individual cst
D048	Intrinsic Si:-	[111] ±0.5°	3"	1,975	P/P	FZ >20,000	Test, NO Flats, Individual cst, Scratches on both sides
J056	P/B	[100]	3"	3,000	P/P	4-6	Prime, NO Flats, Group of 3 wafers
K056	P/B	[100]	3"	5,000	P/E	1-20	Prime, NO Flats, Individual cst
6949	P/B	[111]	3"	2,300	P/P	4-7	SEMI Prime, 1Flat, Individual cst
G046	n-type Si:P	[510] ±0.5°	3"	1,000	P/E	5-10	Prime, NO Flats, Empak cst
S5580	n-type Si:P	[100] ±1°	3"	2,286 ±13	P/P	15-28	SEMI Prime, 1Flat, TTV<1μm, Sealed in individual csts, in groups of 5 wafers
6366	n-type Si:P	[100]	3"	1,500	P/E	5-7	SEMI Prime, 2Flats, Empak cst
6308	n-type Si:P	[100]	3"	6,000	P/E	1-20	SEMI Prime, 1Flat, Individual cst< In sealed group of 8 wafers
5721	n-type Si:P	[111] ±0.5°	3"	1,500	P/P	31-35	SEMI Prime, 1Flat, Empak cst, Cassettes of 10 + 10 + 9 wafers
1263	n-type Si:P	[111] ±0.5°	3"	1,400	P/E	25-35	SEMI Prime, 1Flat, in single wafer cassettes, sealed in groups of 5
H136	n-type Si:P	[111]	3"	10,000	P/E	20-60	SEMI Prime, 1Flat, Individual cst
6198	n-type Si:P	[111]	3"	3,000	P/E	10-20	SEMI Prime, 2Flats, Individual cst, Groups of 2 + 3 wafers
E206	n-type Si:P	[111-5° towards[110]] ±0.25°	3"	1,000	P/E	>5	SEMI Prime, 1Flat, hard cst
G206	n-type Si:P	[111-5° towards[110]] ±0.25°	3"	1,000	P/E	>5	SEMI Prime, 1Flat, in hard cassettes of 6, 6 & 7 wafers
1207	n-type Si:P	[111-5° towards[110]] ±0.25°	3"	1,300	P/E	>5	SEMI Prime, 1Flat, hard cst
S5804	n-type Si:P	[111-0.5° towards[110]] ±0.25°	3"	1,400	E/E	>5	SEMI, 1Flat, LaserMark, in opened hard cast

2 Inch (50.8mm) Thick Silicon Wafers

Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that surface); Material - CZ unless noted
Note: Items sold in quantities of 25, unless noted
Item	Material	Orient.	Diam.	Thck(μm)	Surf.	Res Ωcm	Comment
D769	p-type Si:B	[111] ±0.5°	2"	500	P/P	FZ 5,000-6,500	SEMI Test (in unsealed cassette), 1Flat
2894	n-type Si:P	[110]	2"	900	P/E	FZ 130-350	SEMI Prime, 1Flat, hard cst
4032	n-type Si:P	[110] ±0.5°	2"	900	P/E	FZ 50-100	SEMI Prime, hard cst, Primary Flat only at [111]±0.5°
6187	p-type Si:B	[100]	2"	1,000	P/E	1-10	SEMI Prime, 2Flats, hard cst
U206	p-type Si:B	[100]	2"	3,150	C/C	>0.5	1Flat
5918	p-type Si:B	[100]	2"	3,000	P/E	0.015-0.020	Groups of 5 + 5 + 6 wafers, Test, 2Flats, Individual cst, Wafers with defects
6563	n-type Si:P	[100]	2"	3,175	P/E	1-3	Prime, NO Flats, Individual cst
4333	n-type Si:P	[100] ±1.0°	2"	6,000	P/E	1-10	SEMI Prime, 2Flats, Individual cst
4501	n-type Si:As	[100]	2"	7,050	P/E	0.0031-0.0038	SEMI Prime, 2Flats, Individual cst Group of 2 wafers
5238	n-type Si:P	[111]	2"	5,000	P/E	15-20	SEMI Prime, 1Flat, Individual cst, (group of 6 wafers)
4878	n-type Si:P	[111] ±0.5°	2"	6,000	P/E	1-10	SEMI Prime, 1Flat, Individual cst
4958	n-type Si:Sb	[111]	2"	2,900	P/P	0.013-0.015	Prime, NO Flats, Individual cst, Group of 5 wafers