Thick Silicon Wafers, Non-Standard in Stock

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We have the following Thick Silicon Wafers

6 Inch (150mm) Thick Silicon Wafers

Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that surface); Material - CZ unless noted
Note: Items sold in quantities of 25, unless noted
Item Qty in Material Orient. Diam. Thck Surf. Resistivity Comment  
Stock (μm) Ωcm  
K667 2 p-type Si:B [100] 6" 900 C/C FZ >1,000 SEMI Prime, 1Flat (57.5mm), Empak cst  
7038 13 p-type Si:B [111] ±0.5° 6" 875 P/E FZ >10,000 SEMI notch Prime, Empak cst, Lifetime>1,000μs  
6898 10 p-type Si:B [111] ±0.5° 6" 1,000 P/E FZ >5,000 SEMI Prime, 1Flat (57.5mm), Empak cst  
7208 25 n-type Si:P [100] ±1° 6" 1,000 ±50 P/P FZ >9,500 SEMI Prime, 1Flat (57.5mm), Empak cst, Lifetime>6,000μs  
E239 1 n-type Si:P [100] 6" 825 C/C FZ 7,000-8,000 {7,025-7,856} SEMI, 1Flat, Lifetime=7,562μs, in Open Empak cst  
F907 3 n-type Si:P [100] 6" 3,000 P/P FZ >4,800 SEMI Prime, 1Flat (57.5mm), Individual cst, Lifetime>7,000μs.  
7053 16 n-type Si:P [100] 6" 2,000 P/P FZ 50-70 SEMI Prime, 1Flat (57.5mm), Cassettes of 10 + 6 wafers  
S5622 14 n-type Si:P [100] 6" 1,300 ±10 E/E FZ 0.01-0.05 SEMI notch, Empak cst  
N445 7 n-type Si:P [112-5.0° towards[11-1]] ±0.5° 6" 875 ±10 E/E FZ >3,000 SEMI, 1Flat (47.5mm), TTV<4μm, Surface Chips  
G343 25 n-type Si:P [112-5° towards[11-1]] ±0.5° 6" 1,000 ±10 C/C FZ >3,000 SEMI, 1 JEIDA Flat (47.5mm), Empak cst, TTV<4μm, Lifetime>1,000μs  
L405 4 p-type Si:B [100] 6" 1,000 P/P 15-Oct SEMI Prime, 1Flat (57.5mm), Empak cst, 4 Prime wafers plus 2 scratched wafers at no cost  
7066 159 p-type Si:B [100] 6" 675 P/P 10-May SEMI Prime, 1Flat (57.5mm), Empak cst  
6287 20 p-type Si:B [100] 6" 675 P/E 10-May SEMI Prime, 1Flat (57.5mm), Empak cst  
6751 25 p-type Si:B [100] 6" 1,000 P/E 10-May SEMI Prime, 1Flat (57.5mm), Empak cst  
7030 100 p-type Si:B [100] 6" 1,000 P/E 10-May SEMI Prime, 1Flat (57.5mm), Empak cst  
F162 6 p-type Si:B [100] 6" 2,000 ±50 P/P Jan-35 SEMI Prime, 1Flat (57.5mm), Individual cst, Group of 6 wafers  
5814 202 n-type Si:P [100] 6" 925 ±15 E/E 5-35 {12.5-29.7} JEIDA Prime, Empak cst, TTV<5μm  
F089 4 n-type Si:P [100] 6" 1,910 ±10 P/P 1-100 SEMI Prime, 1Flat (57.5mm), TTV<5μm, sealed in stacked trays of 1 + 3 wafer  
G844 3 n-type Si:P [100] 6" 5,000 P/P Jan-35 SEMI Prime, 1Flat (57.5mm), Individual cst  
E682 2 n-type Si:P [100] 6" 1,280 P/P Oct-35 SEMI notch Prime, Empak cst  
F509 8 n-type Si:P [100] 6" 650 P/P May-35 SEMI Prime, 1Flat (57.5mm), Empak cst  
E324 200 n-type Si:P [100] 6" 725 P/P May-35 SEMI Prime, 1 SEMI Flat(57.5mm), TTV<2μm, TIR<1μm, Bow<10μm, Warp<20μm, Wafers await final polished, Empak cst  
S5861 21 n-type Si:P [100] 6" 675 ±15 P/E 10-Mar SEMI Prime, 1Flat (57.5mm), Empak cst  
S5781 10 n-type Si:P [100] 6" 675 P/E 2.7-4.0 SEMI Prime, 1Flat, Empak cst  
E556 8 n-type Si:P [100] 6" 475 P/P 1-100 SEMI, 1Flat (57.5mm), TTV<5μm, Bow/Warp<15μm, with LM, Empak cst  
G089 5 n-type Si:P [100] 6" 1,875 P/P 1-100 SEMI Prime, 1Flat (57.5mm), TTV<3μm, in stacked trays of 5 wafers  
Q872 5 n-type Si:P [100] 6" 3,000 P/P 1-100 SEMI Prime, 1Flat (57.5mm), Individual cst, Group of 5 wafer  
H844 1 n-type Si:P [100] 6" 5,000±50μm P/P Jan-35 SEMI Prime, 1Flat (57.5mm), Individual cst  

4 Inch (100mm) Thick Silicon Wafers

Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that surface); Material - CZ unless noted
Note: Items sold in quantities of 25, unless noted
Item Qty in Material Orient. Diam. Thck Surf. Resistivity Comment  
Stock (μm) Ωcm  
7178 25 p-type Si:B [100] 4" 1,000 P/P FZ >1,500 SEMI Prime, 2Flats, Empak cst  
5731 20 n-type Si:P [112-3° towards[11-1]] ±0.5° 4" 762 P/P FZ >100 SEMI Prime, 1Flat, Empak cst  
S5767 38 n-type Si:P [112-5° towards[11-1]] ±0.5° 4" 762 P/P FZ ~100 SEMI Prime, 1Flat, Empak cst, TTV<3μm  
5739 5 n-type Si:P [112-5° towards[11-1]] ±0.5° 4" 765 P/P FZ ~100 SEMI Prime, 1Flat, Empak cst, TTV<3μm  
B987 11 n-type Si:P [112-5° towards[11-1]] ±0.5° 4" 795 E/E FZ >100 SEMI, 1Flat, in Empak, TTV<4μm, Lifetime>2,000μs  
6847 75 Intrinsic Si:- [100] 4" 1,000 P/P FZ >20,000 SEMI Prime, 1Flat, Empak cst  
H775 11 p-type Si:B [110] ±0.5° 4" 1,650 P/E 10--15 SEMI Prime, 1Flat, Individual cst  
F153 6 p-type Si:B [100] 4" 3,000 P/P 10--20 SEMI Prime, 1Flat, Individual cst  
F986 15 p-type Si:B [100] 4" 1,600 P/P ~6 SEMI Prime, 1Flat, Individual cst, Groups of 5 + 15 wafers  
4829 15 p-type Si:B [100] 4" 2,100 P/E 1-100 SEMI Prime, 1Flat, Individual cst, Groups of 5 wafers  
D594 5 p-type Si:B [100] 4" 3,175 P/P 1--10 SEMI Prime, 2Flats, Individual cst, TTV<8μm  
6952 4 p-type Si:B [100] 4" 3,100 P/P 0.006-0.009 SEMI Prime, 2Flats, Individual cst, Group of 4 wafers  

3 Inch (76.2mm) Thick Silicon Wafers

Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that surface); Material - CZ unless noted
Note: Items sold in quantities of 25, unless noted
Item Qty in Material Orient. Diam. Thck Surf. Resistivity Comment  
Stock (μm) Ωcm  
S5610 15 p-type Si:B [100] 3" 890 ±13 P/P FZ 0.5-10.0 SEMI, Empak cst, TTV<8μm  
7059 43 n-type Si:P [100] 3" 850 P/E FZ 40-140 SEMI Prime, 2Flats, Empak cst  
5754 9 n-type Si:P [211] ±0.5° 3" 1,016 P/P FZ 25-75 Prime, 1Flat, Empak cst  
3273 50 n-type Si:P [111] ±0.5° 3" 1,000 P/E FZ >5,000 SEMI Prime, 2Flats, Empak cst  
6101 1 Intrinsic Si:- [100] 3" 4,000 P/P FZ >8,000 Test, Scratched, 1Flat, Individual cst  
D048 1 Intrinsic Si:- [111] ±0.5° 3" 1,975 P/P FZ >20,000 Test, NO Flats, Individual cst, Scratches on both sides  
J056 3 p-type Si:B [100] 3" 3,000 P/P 4--6 Prime, NO Flats, Group of 3 wafers  
K056 3 p-type Si:B [100] 3" 5,000 P/E 1--20 Prime, NO Flats, Individual cst  
6949 8 p-type Si:B [111] 3" 2,300 P/P 4--7 SEMI Prime, 1Flat, Individual cst  
G046 50 n-type Si:P [510] ±0.5° 3" 1,000 P/E 5--10 Prime, NO Flats, Empak cst  
S5580 5 n-type Si:P [100] ±1° 3" 2,286 ±13 P/P 15-28 SEMI Prime, 1Flat, TTV<1μm, Sealed in individual csts, in groups of 5 wafers  
6366 13 n-type Si:P [100] 3" 1,500 P/E 5--7 SEMI Prime, 2Flats, Empak cst  
6308 8 n-type Si:P [100] 3" 6,000 P/E 1--20 SEMI Prime, 1Flat, Individual cst< In sealed group of 8 wafers  
5721 29 n-type Si:P [111] ±0.5° 3" 1,500 P/P 31-35 SEMI Prime, 1Flat, Empak cst, Cassettes of 10 + 10 + 9 wafers  
1263 5 n-type Si:P [111] ±0.5° 3" 1,400 P/E 25-35 SEMI Prime, 1Flat, in single wafer cassettes, sealed in groups of 5  
H136 2 n-type Si:P [111] 3" 10,000 P/E 20-60 SEMI Prime, 1Flat, Individual cst  
6198 5 n-type Si:P [111] 3" 3,000 P/E 10--20 SEMI Prime, 2Flats, Individual cst, Groups of 2 + 3 wafers  
E206 100 n-type Si:P [111-5° towards[110]] ±0.25° 3" 1,000 P/E >5 SEMI Prime, 1Flat, hard cst  
G206 19 n-type Si:P [111-5° towards[110]] ±0.25° 3" 1,000 P/E >5 SEMI Prime, 1Flat, in hard cassettes of 6, 6 & 7 wafers  
1207 25 n-type Si:P [111-5° towards[110]] ±0.25° 3" 1,300 P/E >5 SEMI Prime, 1Flat, hard cst  
S5804 25 n-type Si:P [111-0.5° towards[110]] ±0.25° 3" 1,400 E/E >5 SEMI, 1Flat, LaserMark, in opened hard cast  

2 Inch (50.8mm) Thick Silicon Wafers

Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that surface); Material - CZ unless noted
Note: Items sold in quantities of 25, unless noted
Item Qty in Material Orient. Diam. Thck Surf. Resistivity Comment  
Stock (μm) Ωcm  
D769 8 p--type Si:B [111] ±0.5° 2" 500 P/P FZ 5,000--6,500 SEMI Test (in unsealed cassette), 1Flat  
2894 13 n--type Si:P [110] 2" 900 P/E FZ 130--350 SEMI Prime, 1Flat, hard cst  
4032 8 n--type Si:P [110] ±0.5° 2" 900 P/E FZ 50--100 SEMI Prime, hard cst, Primary Flat only at [111]±0.5°  
6187 75 p--type Si:B [100] 2" 1,000 P/E 1--10 SEMI Prime, 2Flats, hard cst  
U206 59 p--type Si:B [100] 2" 3,150 C/C >0.5 1Flat  
5918 16 p--type Si:B [100] 2" 3,000 P/E 0.015--0.020 Groups of 5 + 5 + 6 wafers, Test, 2Flats, Individual cst, Wafers with defects  
6563 6 n--type Si:P [100] 2" 3,175 P/E 1--3 Prime, NO Flats, Individual cst  
4333 5 n--type Si:P [100] ±1.0° 2" 6,000 P/E 1--10 SEMI Prime, 2Flats, Individual cst  
4501 2 n--type Si:As [100] 2" 7,050 P/E 0.0031--0.0038 SEMI Prime, 2Flats, Individual cst Group of 2 wafers  
5238 6 n--type Si:P [111] 2" 5,000 P/E 15--20 SEMI Prime, 1Flat, Individual cst, (group of 6 wafers)  
4878 1 n--type Si:P [111] ±0.5° 2" 6,000 P/E 1--10 SEMI Prime, 1Flat, Individual cst  
4958 5 n--type Si:Sb [111] 2" 2,900 P/P 0.013--0.015 Prime, NO Flats, Individual cst, Group of 5 wafers