Thick Silicon Wafers Research & Production in Stock

University Wafer Silicon Wafers and Semicondcutor Substrates Services
University Silicon Wafer for Production

Why is Silicon Wafer Thickness Important?

A Silicon Wafer's thickness influences the wafer's mechanical properties. The thickness is expressed in microns.

Recent advancements in wafer fabricating technology for IC have seen silicon wafer thicknesses of greater than 20mm.

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Thick Silicon Wafers for Research

Reseacher:

Would you mind helping us out with a thick wafer we're after? Do you have any Si or glass (can be any type of glass, quartz, fused silica, etc.) wafer that fits the following description. Or possibly you can fabricate it? Diameter: => 25 mm Thickness: => 7 mm Polish: electronics/prime grade polish on one or both sides (<1 nm)

UniversityWafer Quoted:

Diameter: => 50.8 mm Thickness: => 7 mm Polish: electronics/prime grade SSP (<1 nm)

Price $Call for pricing

Thick Silicon for Lossy Mirror

Researcher:

I am looking for thick silicon wafer of 4" diameter and thickness of 5 to 10mm. We want to use it as a lossy mirror for 800nm laser, so at least one surface should be polished. The doping of wafer is not critical for our use. If you have something like this, will you please send me a quote for 1 and 5 pieces?

UniversityWafer, Inc. Quoted:

We quoted the following:

1. thick silicon wafer of 4" diameter,thickness of 05mm,use it as a lossy mirror for 800nm laser,one surface polished. The doping of wafer is not critical

Price depends on quantity

2. thick silicon wafer of 4" diameter,thickness of 10mm,use it as a lossy mirror for 800nm laser,one surface polished. The doping of wafer is not critical

Price depends on quantity

We have the following Thick Silicon Wafers

Below are just some of the thick silicon wafers that we have in stock. Please let us know what you can use or if you need another thickness and or wafer specification.

6 Inch (150mm) Thick Silicon Wafers

Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that surface); Material - CZ unless noted
Note: Items sold in quantities of 25, unless noted
Item Material Orient. Diam. Thck(μm) Surf. Res Ωcm Comment  
 
K667 P/B [100] 6" 900 C/C FZ >1,000 SEMI Prime, 1Flat (57.5mm)  
7038 P/B [111] ±0.5° 6" 875 P/E FZ >10,000 SEMI notch Prime Lifetime>1,000μs  
6898 P/B [111] ±0.5° 6" 1,000 P/E FZ >5,000 SEMI Prime, 1Flat (57.5mm)  
7208 n-type Si:P [100] ±1° 6" 1,000 ±50 P/P FZ >9,500 SEMI Prime, 1Flat (57.5mm), Lifetime>6,000μs  
E239 n-type Si:P [100] 6" 825 C/C FZ 7,000-8,000 {7,025-7,856} SEMI, 1Flat, Lifetime=7,562μs, in Open Empak cst  
F907 n-type Si:P [100] 6" 3,000 P/P FZ >4,800 SEMI Prime, 1Flat (57.5mm), Individual cst, Lifetime>7,000μs.  
7053 n-type Si:P [100] 6" 2,000 P/P FZ 50-70 SEMI Prime, 1Flat (57.5mm), Cassettes of 10 + 6 wafers  
S5622 n-type Si:P [100] 6" 1,300 ±10 E/E FZ 0.01-0.05 SEMI notch, Empak cst  
N445 n-type Si:P [112-5.0° towards[11-1]] ±0.5° 6" 875 ±10 E/E FZ >3,000 SEMI, 1Flat (47.5mm), TTV<4μm, Surface Chips  
G343 n-type Si:P [112-5° towards[11-1]] ±0.5° 6" 1,000 ±10 C/C FZ >3,000 SEMI, 1 JEIDA Flat (47.5mm), Empak cst, TTV<4μm, Lifetime>1,000μs  
L405 P/B [100] 6" 1,000 P/P 10-15 SEMI Prime, 1Flat (57.5mm), Empak cst, 4 Prime wafers plus 2 scratched wafers at no cost  
7066 P/B [100] 6" 675 P/P 5-10 SEMI Prime, 1Flat (57.5mm), Empak cst  
6287 P/B [100] 6" 675 P/E 5-10 SEMI Prime, 1Flat (57.5mm), Empak cst  
6751 P/B [100] 6" 1,000 P/E 5-10 SEMI Prime, 1Flat (57.5mm), Empak cst  
7030 P/B [100] 6" 1,000 P/E 5-10 SEMI Prime, 1Flat (57.5mm), Empak cst  
F162 P/B [100] 6" 2,000 ±50 P/P 1-35 SEMI Prime, 1Flat (57.5mm), Individual cst, Group of 6 wafers  
5814 n-type Si:P [100] 6" 925 ±15 E/E 5-35 {12.5-29.7} JEIDA Prime, Empak cst, TTV<5μm  
F089 n-type Si:P [100] 6" 1,910 ±10 P/P 1-100 SEMI Prime, 1Flat (57.5mm), TTV<5μm, sealed in stacked trays of 1 + 3 wafer  
G844 n-type Si:P [100] 6" 5,000 P/P 1-35 SEMI Prime, 1Flat (57.5mm), Individual cst  
E682 n-type Si:P [100] 6" 1,280 P/P 10-35 SEMI notch Prime, Empak cst  
F509 n-type Si:P [100] 6" 650 P/P 5-35 SEMI Prime, 1Flat (57.5mm), Empak cst  
E324 n-type Si:P [100] 6" 725 P/P 5-35 SEMI Prime, 1 SEMI Flat(57.5mm), TTV<2μm, TIR<1μm, Bow<10μm, Warp<20μm, Wafers await final polished, Empak cst  
S5861 n-type Si:P [100] 6" 675 ±15 P/E 3-10 SEMI Prime, 1Flat (57.5mm), Empak cst  
S5781 n-type Si:P [100] 6" 675 P/E 2.7-4.0 SEMI Prime, 1Flat, Empak cst  
E556 n-type Si:P [100] 6" 475 P/P 1-100 SEMI, 1Flat (57.5mm), TTV<5μm, Bow/Warp<15μm, with LM, Empak cst  
G089 n-type Si:P [100] 6" 1,875 P/P 1-100 SEMI Prime, 1Flat (57.5mm), TTV<3μm, in stacked trays of 5 wafers  
Q872 n-type Si:P [100] 6" 3,000 P/P 1-100 SEMI Prime, 1Flat (57.5mm), Individual cst, Group of 5 wafer  
H844 n-type Si:P [100] 6" 5,000±50μm P/P 1-35 SEMI Prime, 1Flat (57.5mm), Individual cst  

4 Inch (100mm) Thick Silicon Wafers

Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that surface); Material - CZ unless noted
Note: Items sold in quantities of 25, unless noted
Item Material Orient. Diam. Thck(μm) Surf. Res Ωcm Comment  
 
7178 P/B [100] 4" 1,000 P/P FZ >1,500 SEMI Prime, 2Flats, Empak cst  
5731 n-type Si:P [112-3° towards[11-1]] ±0.5° 4" 762 P/P FZ >100 SEMI Prime, 1Flat, Empak cst  
S5767 n-type Si:P [112-5° towards[11-1]] ±0.5° 4" 762 P/P FZ ~100 SEMI Prime, 1Flat, Empak cst, TTV<3μm  
5739 n-type Si:P [112-5° towards[11-1]] ±0.5° 4" 765 P/P FZ ~100 SEMI Prime, 1Flat, Empak cst, TTV<3μm  
B987 n-type Si:P [112-5° towards[11-1]] ±0.5° 4" 795 E/E FZ >100 SEMI, 1Flat, in Empak, TTV<4μm, Lifetime>2,000μs  
6847 Intrinsic Si:- [100] 4" 1,000 P/P FZ >20,000 SEMI Prime, 1Flat, Empak cst  
H775 P/B [110] ±0.5° 4" 1,650 P/E 10-15 SEMI Prime, 1Flat, Individual cst  
F153 P/B [100] 4" 3,000 P/P 10-20 SEMI Prime, 1Flat, Individual cst  
F986 P/B [100] 4" 1,600 P/P ~6 SEMI Prime, 1Flat, Individual cst, Groups of 5 + 15 wafers  
4829 P/B [100] 4" 2,100 P/E 1-100 SEMI Prime, 1Flat, Individual cst, Groups of 5 wafers  
D594 P/B [100] 4" 3,175 P/P 1-10 SEMI Prime, 2Flats, Individual cst, TTV<8μm  
6952 P/B [100] 4" 3,100 P/P 0.006-0.009 SEMI Prime, 2Flats, Individual cst, Group of 4 wafers  

3 Inch (76.2mm) Thick Silicon Wafers

Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that surface); Material - CZ unless noted
Note: Items sold in quantities of 25, unless noted
Item Material Orient. Diam. Thck(μm) Surf. Res Ωcm Comment  
 
S5610 P/B [100] 3" 890 ±13 P/P FZ 0.5-10.0 SEMI, Empak cst, TTV<8μm  
7059 n-type Si:P [100] 3" 850 P/E FZ 40-140 SEMI Prime, 2Flats, Empak cst  
5754 n-type Si:P [211] ±0.5° 3" 1,016 P/P FZ 25-75 Prime, 1Flat, Empak cst  
3273 n-type Si:P [111] ±0.5° 3" 1,000 P/E FZ >5,000 SEMI Prime, 2Flats, Empak cst  
6101 Intrinsic Si:- [100] 3" 4,000 P/P FZ >8,000 Test, Scratched, 1Flat, Individual cst  
D048 Intrinsic Si:- [111] ±0.5° 3" 1,975 P/P FZ >20,000 Test, NO Flats, Individual cst, Scratches on both sides  
J056 P/B [100] 3" 3,000 P/P 4-6 Prime, NO Flats, Group of 3 wafers  
K056 P/B [100] 3" 5,000 P/E 1-20 Prime, NO Flats, Individual cst  
6949 P/B [111] 3" 2,300 P/P 4-7 SEMI Prime, 1Flat, Individual cst  
G046 n-type Si:P [510] ±0.5° 3" 1,000 P/E 5-10 Prime, NO Flats, Empak cst  
S5580 n-type Si:P [100] ±1° 3" 2,286 ±13 P/P 15-28 SEMI Prime, 1Flat, TTV<1μm, Sealed in individual csts, in groups of 5 wafers  
6366 n-type Si:P [100] 3" 1,500 P/E 5-7 SEMI Prime, 2Flats, Empak cst  
6308 n-type Si:P [100] 3" 6,000 P/E 1-20 SEMI Prime, 1Flat, Individual cst< In sealed group of 8 wafers  
5721 n-type Si:P [111] ±0.5° 3" 1,500 P/P 31-35 SEMI Prime, 1Flat, Empak cst, Cassettes of 10 + 10 + 9 wafers  
1263 n-type Si:P [111] ±0.5° 3" 1,400 P/E 25-35 SEMI Prime, 1Flat, in single wafer cassettes, sealed in groups of 5  
H136 n-type Si:P [111] 3" 10,000 P/E 20-60 SEMI Prime, 1Flat, Individual cst  
6198 n-type Si:P [111] 3" 3,000 P/E 10-20 SEMI Prime, 2Flats, Individual cst, Groups of 2 + 3 wafers  
E206 n-type Si:P [111-5° towards[110]] ±0.25° 3" 1,000 P/E >5 SEMI Prime, 1Flat, hard cst  
G206 n-type Si:P [111-5° towards[110]] ±0.25° 3" 1,000 P/E >5 SEMI Prime, 1Flat, in hard cassettes of 6, 6 & 7 wafers  
1207 n-type Si:P [111-5° towards[110]] ±0.25° 3" 1,300 P/E >5 SEMI Prime, 1Flat, hard cst  
S5804 n-type Si:P [111-0.5° towards[110]] ±0.25° 3" 1,400 E/E >5 SEMI, 1Flat, LaserMark, in opened hard cast  

2 Inch (50.8mm) Thick Silicon Wafers

Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that surface); Material - CZ unless noted
Note: Items sold in quantities of 25, unless noted
Item Material Orient. Diam. Thck(μm) Surf. Res Ωcm Comment  
 
D769 p-type Si:B [111] ±0.5° 2" 500 P/P FZ 5,000-6,500 SEMI Test (in unsealed cassette), 1Flat  
2894 n-type Si:P [110] 2" 900 P/E FZ 130-350 SEMI Prime, 1Flat, hard cst  
4032 n-type Si:P [110] ±0.5° 2" 900 P/E FZ 50-100 SEMI Prime, hard cst, Primary Flat only at [111]±0.5°  
6187 p-type Si:B [100] 2" 1,000 P/E 1-10 SEMI Prime, 2Flats, hard cst  
U206 p-type Si:B [100] 2" 3,150 C/C >0.5 1Flat  
5918 p-type Si:B [100] 2" 3,000 P/E 0.015-0.020 Groups of 5 + 5 + 6 wafers, Test, 2Flats, Individual cst, Wafers with defects  
6563 n-type Si:P [100] 2" 3,175 P/E 1-3 Prime, NO Flats, Individual cst  
4333 n-type Si:P [100] ±1.0° 2" 6,000 P/E 1-10 SEMI Prime, 2Flats, Individual cst  
4501 n-type Si:As [100] 2" 7,050 P/E 0.0031-0.0038 SEMI Prime, 2Flats, Individual cst Group of 2 wafers  
5238 n-type Si:P [111] 2" 5,000 P/E 15-20 SEMI Prime, 1Flat, Individual cst, (group of 6 wafers)  
4878 n-type Si:P [111] ±0.5° 2" 6,000 P/E 1-10 SEMI Prime, 1Flat, Individual cst  
4958 n-type Si:Sb [111] 2" 2,900 P/P 0.013-0.015 Prime, NO Flats, Individual cst, Group of 5 wafers