Thick Silicon Wafers Research & Production in Stock

Why is Silicon Wafer Thickness Important?

A Silicon Wafer's thickness influences the wafer's mechanical properties. The thickness is expressed in microns.

Recent advancements in wafer fabricating technology for IC have seen silicon wafer thicknesses of greater than 20mm.

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We have the following Thick Silicon Wafers

Below are just some of the thick silicon wafers that we have in stock. Please let us know what you can use or if you need another thickness and or wafer specification.

6 Inch (150mm) Thick Silicon Wafers

Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that surface); Material - CZ unless noted
Note: Items sold in quantities of 25, unless noted
Item	Qty in	Material	Orient.	Diam.	Thck	Surf.	Resistivity	Comment
	Stock				(μm)		Ωcm
K667	2	p-type Si:B	[100]	6"	900	C/C	FZ >1,000	SEMI Prime, 1Flat (57.5mm)
7038	13	p-type Si:B	[111] ±0.5°	6"	875	P/E	FZ >10,000	SEMI notch Prime Lifetime>1,000μs
6898	10	p-type Si:B	[111] ±0.5°	6"	1,000	P/E	FZ >5,000	SEMI Prime, 1Flat (57.5mm)
7208	25	n-type Si:P	[100] ±1°	6"	1,000 ±50	P/P	FZ >9,500	SEMI Prime, 1Flat (57.5mm), Lifetime>6,000μs
E239	1	n-type Si:P	[100]	6"	825	C/C	FZ 7,000-8,000 {7,025-7,856}	SEMI, 1Flat, Lifetime=7,562μs, in Open Empak cst
F907	3	n-type Si:P	[100]	6"	3,000	P/P	FZ >4,800	SEMI Prime, 1Flat (57.5mm), Individual cst, Lifetime>7,000μs.
7053	16	n-type Si:P	[100]	6"	2,000	P/P	FZ 50-70	SEMI Prime, 1Flat (57.5mm), Cassettes of 10 + 6 wafers
S5622	14	n-type Si:P	[100]	6"	1,300 ±10	E/E	FZ 0.01-0.05	SEMI notch, Empak cst
N445	7	n-type Si:P	[112-5.0° towards[11-1]] ±0.5°	6"	875 ±10	E/E	FZ >3,000	SEMI, 1Flat (47.5mm), TTV<4μm, Surface Chips
G343	25	n-type Si:P	[112-5° towards[11-1]] ±0.5°	6"	1,000 ±10	C/C	FZ >3,000	SEMI, 1 JEIDA Flat (47.5mm), Empak cst, TTV<4μm, Lifetime>1,000μs
L405	4	p-type Si:B	[100]	6"	1,000	P/P	10-15	SEMI Prime, 1Flat (57.5mm), Empak cst, 4 Prime wafers plus 2 scratched wafers at no cost
7066	159	p-type Si:B	[100]	6"	675	P/P	5-10	SEMI Prime, 1Flat (57.5mm), Empak cst
6287	20	p-type Si:B	[100]	6"	675	P/E	5-10	SEMI Prime, 1Flat (57.5mm), Empak cst
6751	25	p-type Si:B	[100]	6"	1,000	P/E	5-10	SEMI Prime, 1Flat (57.5mm), Empak cst
7030	100	p-type Si:B	[100]	6"	1,000	P/E	5-10	SEMI Prime, 1Flat (57.5mm), Empak cst
F162	6	p-type Si:B	[100]	6"	2,000 ±50	P/P	1-35	SEMI Prime, 1Flat (57.5mm), Individual cst, Group of 6 wafers
5814	202	n-type Si:P	[100]	6"	925 ±15	E/E	5-35 {12.5-29.7}	JEIDA Prime, Empak cst, TTV<5μm
F089	4	n-type Si:P	[100]	6"	1,910 ±10	P/P	1-100	SEMI Prime, 1Flat (57.5mm), TTV<5μm, sealed in stacked trays of 1 + 3 wafer
G844	3	n-type Si:P	[100]	6"	5,000	P/P	1-35	SEMI Prime, 1Flat (57.5mm), Individual cst
E682	2	n-type Si:P	[100]	6"	1,280	P/P	10-35	SEMI notch Prime, Empak cst
F509	8	n-type Si:P	[100]	6"	650	P/P	5-35	SEMI Prime, 1Flat (57.5mm), Empak cst
E324	200	n-type Si:P	[100]	6"	725	P/P	5-35	SEMI Prime, 1 SEMI Flat(57.5mm), TTV<2μm, TIR<1μm, Bow<10μm, Warp<20μm, Wafers await final polished, Empak cst
S5861	21	n-type Si:P	[100]	6"	675 ±15	P/E	3-10	SEMI Prime, 1Flat (57.5mm), Empak cst
S5781	10	n-type Si:P	[100]	6"	675	P/E	2.7-4.0	SEMI Prime, 1Flat, Empak cst
E556	8	n-type Si:P	[100]	6"	475	P/P	1-100	SEMI, 1Flat (57.5mm), TTV<5μm, Bow/Warp<15μm, with LM, Empak cst
G089	5	n-type Si:P	[100]	6"	1,875	P/P	1-100	SEMI Prime, 1Flat (57.5mm), TTV<3μm, in stacked trays of 5 wafers
Q872	5	n-type Si:P	[100]	6"	3,000	P/P	1-100	SEMI Prime, 1Flat (57.5mm), Individual cst, Group of 5 wafer
H844	1	n-type Si:P	[100]	6"	5,000±50μm	P/P	1-35	SEMI Prime, 1Flat (57.5mm), Individual cst

4 Inch (100mm) Thick Silicon Wafers

Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that surface); Material - CZ unless noted
Note: Items sold in quantities of 25, unless noted
Item	Qty in	Material	Orient.	Diam.	Thck	Surf.	Resistivity	Comment
	Stock				(μm)		Ωcm
7178	25	p-type Si:B	[100]	4"	1,000	P/P	FZ >1,500	SEMI Prime, 2Flats, Empak cst
5731	20	n-type Si:P	[112-3° towards[11-1]] ±0.5°	4"	762	P/P	FZ >100	SEMI Prime, 1Flat, Empak cst
S5767	38	n-type Si:P	[112-5° towards[11-1]] ±0.5°	4"	762	P/P	FZ ~100	SEMI Prime, 1Flat, Empak cst, TTV<3μm
5739	5	n-type Si:P	[112-5° towards[11-1]] ±0.5°	4"	765	P/P	FZ ~100	SEMI Prime, 1Flat, Empak cst, TTV<3μm
B987	11	n-type Si:P	[112-5° towards[11-1]] ±0.5°	4"	795	E/E	FZ >100	SEMI, 1Flat, in Empak, TTV<4μm, Lifetime>2,000μs
6847	75	Intrinsic Si:-	[100]	4"	1,000	P/P	FZ >20,000	SEMI Prime, 1Flat, Empak cst
H775	11	p-type Si:B	[110] ±0.5°	4"	1,650	P/E	10--15	SEMI Prime, 1Flat, Individual cst
F153	6	p-type Si:B	[100]	4"	3,000	P/P	10--20	SEMI Prime, 1Flat, Individual cst
F986	15	p-type Si:B	[100]	4"	1,600	P/P	~6	SEMI Prime, 1Flat, Individual cst, Groups of 5 + 15 wafers
4829	15	p-type Si:B	[100]	4"	2,100	P/E	1-100	SEMI Prime, 1Flat, Individual cst, Groups of 5 wafers
D594	5	p-type Si:B	[100]	4"	3,175	P/P	1--10	SEMI Prime, 2Flats, Individual cst, TTV<8μm
6952	4	p-type Si:B	[100]	4"	3,100	P/P	0.006-0.009	SEMI Prime, 2Flats, Individual cst, Group of 4 wafers

3 Inch (76.2mm) Thick Silicon Wafers

Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that surface); Material - CZ unless noted
Note: Items sold in quantities of 25, unless noted
Item	Qty in	Material	Orient.	Diam.	Thck	Surf.	Resistivity	Comment
	Stock				(μm)		Ωcm
S5610	15	p-type Si:B	[100]	3"	890 ±13	P/P	FZ 0.5-10.0	SEMI, Empak cst, TTV<8μm
7059	43	n-type Si:P	[100]	3"	850	P/E	FZ 40-140	SEMI Prime, 2Flats, Empak cst
5754	9	n-type Si:P	[211] ±0.5°	3"	1,016	P/P	FZ 25-75	Prime, 1Flat, Empak cst
3273	50	n-type Si:P	[111] ±0.5°	3"	1,000	P/E	FZ >5,000	SEMI Prime, 2Flats, Empak cst
6101	1	Intrinsic Si:-	[100]	3"	4,000	P/P	FZ >8,000	Test, Scratched, 1Flat, Individual cst
D048	1	Intrinsic Si:-	[111] ±0.5°	3"	1,975	P/P	FZ >20,000	Test, NO Flats, Individual cst, Scratches on both sides
J056	3	p-type Si:B	[100]	3"	3,000	P/P	4--6	Prime, NO Flats, Group of 3 wafers
K056	3	p-type Si:B	[100]	3"	5,000	P/E	1--20	Prime, NO Flats, Individual cst
6949	8	p-type Si:B	[111]	3"	2,300	P/P	4--7	SEMI Prime, 1Flat, Individual cst
G046	50	n-type Si:P	[510] ±0.5°	3"	1,000	P/E	5--10	Prime, NO Flats, Empak cst
S5580	5	n-type Si:P	[100] ±1°	3"	2,286 ±13	P/P	15-28	SEMI Prime, 1Flat, TTV<1μm, Sealed in individual csts, in groups of 5 wafers
6366	13	n-type Si:P	[100]	3"	1,500	P/E	5--7	SEMI Prime, 2Flats, Empak cst
6308	8	n-type Si:P	[100]	3"	6,000	P/E	1--20	SEMI Prime, 1Flat, Individual cst< In sealed group of 8 wafers
5721	29	n-type Si:P	[111] ±0.5°	3"	1,500	P/P	31-35	SEMI Prime, 1Flat, Empak cst, Cassettes of 10 + 10 + 9 wafers
1263	5	n-type Si:P	[111] ±0.5°	3"	1,400	P/E	25-35	SEMI Prime, 1Flat, in single wafer cassettes, sealed in groups of 5
H136	2	n-type Si:P	[111]	3"	10,000	P/E	20-60	SEMI Prime, 1Flat, Individual cst
6198	5	n-type Si:P	[111]	3"	3,000	P/E	10--20	SEMI Prime, 2Flats, Individual cst, Groups of 2 + 3 wafers
E206	100	n-type Si:P	[111-5° towards[110]] ±0.25°	3"	1,000	P/E	>5	SEMI Prime, 1Flat, hard cst
G206	19	n-type Si:P	[111-5° towards[110]] ±0.25°	3"	1,000	P/E	>5	SEMI Prime, 1Flat, in hard cassettes of 6, 6 & 7 wafers
1207	25	n-type Si:P	[111-5° towards[110]] ±0.25°	3"	1,300	P/E	>5	SEMI Prime, 1Flat, hard cst
S5804	25	n-type Si:P	[111-0.5° towards[110]] ±0.25°	3"	1,400	E/E	>5	SEMI, 1Flat, LaserMark, in opened hard cast

2 Inch (50.8mm) Thick Silicon Wafers

Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that surface); Material - CZ unless noted
Note: Items sold in quantities of 25, unless noted
Item	Qty in	Material	Orient.	Diam.	Thck	Surf.	Resistivity	Comment
	Stock				(μm)		Ωcm
D769	8	p--type Si:B	[111] ±0.5°	2"	500	P/P	FZ 5,000--6,500	SEMI Test (in unsealed cassette), 1Flat
2894	13	n--type Si:P	[110]	2"	900	P/E	FZ 130--350	SEMI Prime, 1Flat, hard cst
4032	8	n--type Si:P	[110] ±0.5°	2"	900	P/E	FZ 50--100	SEMI Prime, hard cst, Primary Flat only at [111]±0.5°
6187	75	p--type Si:B	[100]	2"	1,000	P/E	1--10	SEMI Prime, 2Flats, hard cst
U206	59	p--type Si:B	[100]	2"	3,150	C/C	>0.5	1Flat
5918	16	p--type Si:B	[100]	2"	3,000	P/E	0.015--0.020	Groups of 5 + 5 + 6 wafers, Test, 2Flats, Individual cst, Wafers with defects
6563	6	n--type Si:P	[100]	2"	3,175	P/E	1--3	Prime, NO Flats, Individual cst
4333	5	n--type Si:P	[100] ±1.0°	2"	6,000	P/E	1--10	SEMI Prime, 2Flats, Individual cst
4501	2	n--type Si:As	[100]	2"	7,050	P/E	0.0031--0.0038	SEMI Prime, 2Flats, Individual cst Group of 2 wafers
5238	6	n--type Si:P	[111]	2"	5,000	P/E	15--20	SEMI Prime, 1Flat, Individual cst, (group of 6 wafers)
4878	1	n--type Si:P	[111] ±0.5°	2"	6,000	P/E	1--10	SEMI Prime, 1Flat, Individual cst
4958	5	n--type Si:Sb	[111]	2"	2,900	P/P	0.013--0.015	Prime, NO Flats, Individual cst, Group of 5 wafers