A Silicon Wafer's thickness influences the wafer's mechanical properties. The thickness is expressed in microns.
Recent advancements in wafer fabricating technology for IC have seen silicon wafer thicknesses of greater than 20mm.
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Below are just some of the thick silicon wafers that we have in stock. Please let us know what you can use or if you need another thickness and or wafer specification.
Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that surface); Material - CZ unless noted | |||||||||
Note: Items sold in quantities of 25, unless noted | |||||||||
Item | Qty in | Material | Orient. | Diam. | Thck | Surf. | Resistivity | Comment | |
Stock | (μm) | Ωcm | |||||||
K667 | 2 | p-type Si:B | [100] | 6" | 900 | C/C | FZ >1,000 | SEMI Prime, 1Flat (57.5mm) | |
7038 | 13 | p-type Si:B | [111] ±0.5° | 6" | 875 | P/E | FZ >10,000 | SEMI notch Prime Lifetime>1,000μs | |
6898 | 10 | p-type Si:B | [111] ±0.5° | 6" | 1,000 | P/E | FZ >5,000 | SEMI Prime, 1Flat (57.5mm) | |
7208 | 25 | n-type Si:P | [100] ±1° | 6" | 1,000 ±50 | P/P | FZ >9,500 | SEMI Prime, 1Flat (57.5mm), Lifetime>6,000μs | |
E239 | 1 | n-type Si:P | [100] | 6" | 825 | C/C | FZ 7,000-8,000 {7,025-7,856} | SEMI, 1Flat, Lifetime=7,562μs, in Open Empak cst | |
F907 | 3 | n-type Si:P | [100] | 6" | 3,000 | P/P | FZ >4,800 | SEMI Prime, 1Flat (57.5mm), Individual cst, Lifetime>7,000μs. | |
7053 | 16 | n-type Si:P | [100] | 6" | 2,000 | P/P | FZ 50-70 | SEMI Prime, 1Flat (57.5mm), Cassettes of 10 + 6 wafers | |
S5622 | 14 | n-type Si:P | [100] | 6" | 1,300 ±10 | E/E | FZ 0.01-0.05 | SEMI notch, Empak cst | |
N445 | 7 | n-type Si:P | [112-5.0° towards[11-1]] ±0.5° | 6" | 875 ±10 | E/E | FZ >3,000 | SEMI, 1Flat (47.5mm), TTV<4μm, Surface Chips | |
G343 | 25 | n-type Si:P | [112-5° towards[11-1]] ±0.5° | 6" | 1,000 ±10 | C/C | FZ >3,000 | SEMI, 1 JEIDA Flat (47.5mm), Empak cst, TTV<4μm, Lifetime>1,000μs | |
L405 | 4 | p-type Si:B | [100] | 6" | 1,000 | P/P | 10-15 | SEMI Prime, 1Flat (57.5mm), Empak cst, 4 Prime wafers plus 2 scratched wafers at no cost | |
7066 | 159 | p-type Si:B | [100] | 6" | 675 | P/P | 5-10 | SEMI Prime, 1Flat (57.5mm), Empak cst | |
6287 | 20 | p-type Si:B | [100] | 6" | 675 | P/E | 5-10 | SEMI Prime, 1Flat (57.5mm), Empak cst | |
6751 | 25 | p-type Si:B | [100] | 6" | 1,000 | P/E | 5-10 | SEMI Prime, 1Flat (57.5mm), Empak cst | |
7030 | 100 | p-type Si:B | [100] | 6" | 1,000 | P/E | 5-10 | SEMI Prime, 1Flat (57.5mm), Empak cst | |
F162 | 6 | p-type Si:B | [100] | 6" | 2,000 ±50 | P/P | 1-35 | SEMI Prime, 1Flat (57.5mm), Individual cst, Group of 6 wafers | |
5814 | 202 | n-type Si:P | [100] | 6" | 925 ±15 | E/E | 5-35 {12.5-29.7} | JEIDA Prime, Empak cst, TTV<5μm | |
F089 | 4 | n-type Si:P | [100] | 6" | 1,910 ±10 | P/P | 1-100 | SEMI Prime, 1Flat (57.5mm), TTV<5μm, sealed in stacked trays of 1 + 3 wafer | |
G844 | 3 | n-type Si:P | [100] | 6" | 5,000 | P/P | 1-35 | SEMI Prime, 1Flat (57.5mm), Individual cst | |
E682 | 2 | n-type Si:P | [100] | 6" | 1,280 | P/P | 10-35 | SEMI notch Prime, Empak cst | |
F509 | 8 | n-type Si:P | [100] | 6" | 650 | P/P | 5-35 | SEMI Prime, 1Flat (57.5mm), Empak cst | |
E324 | 200 | n-type Si:P | [100] | 6" | 725 | P/P | 5-35 | SEMI Prime, 1 SEMI Flat(57.5mm), TTV<2μm, TIR<1μm, Bow<10μm, Warp<20μm, Wafers await final polished, Empak cst | |
S5861 | 21 | n-type Si:P | [100] | 6" | 675 ±15 | P/E | 3-10 | SEMI Prime, 1Flat (57.5mm), Empak cst | |
S5781 | 10 | n-type Si:P | [100] | 6" | 675 | P/E | 2.7-4.0 | SEMI Prime, 1Flat, Empak cst | |
E556 | 8 | n-type Si:P | [100] | 6" | 475 | P/P | 1-100 | SEMI, 1Flat (57.5mm), TTV<5μm, Bow/Warp<15μm, with LM, Empak cst | |
G089 | 5 | n-type Si:P | [100] | 6" | 1,875 | P/P | 1-100 | SEMI Prime, 1Flat (57.5mm), TTV<3μm, in stacked trays of 5 wafers | |
Q872 | 5 | n-type Si:P | [100] | 6" | 3,000 | P/P | 1-100 | SEMI Prime, 1Flat (57.5mm), Individual cst, Group of 5 wafer | |
H844 | 1 | n-type Si:P | [100] | 6" | 5,000±50μm | P/P | 1-35 | SEMI Prime, 1Flat (57.5mm), Individual cst |
Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that surface); Material - CZ unless noted | |||||||||
Note: Items sold in quantities of 25, unless noted | |||||||||
Item | Qty in | Material | Orient. | Diam. | Thck | Surf. | Resistivity | Comment | |
Stock | (μm) | Ωcm | |||||||
7178 | 25 | p-type Si:B | [100] | 4" | 1,000 | P/P | FZ >1,500 | SEMI Prime, 2Flats, Empak cst | |
5731 | 20 | n-type Si:P | [112-3° towards[11-1]] ±0.5° | 4" | 762 | P/P | FZ >100 | SEMI Prime, 1Flat, Empak cst | |
S5767 | 38 | n-type Si:P | [112-5° towards[11-1]] ±0.5° | 4" | 762 | P/P | FZ ~100 | SEMI Prime, 1Flat, Empak cst, TTV<3μm | |
5739 | 5 | n-type Si:P | [112-5° towards[11-1]] ±0.5° | 4" | 765 | P/P | FZ ~100 | SEMI Prime, 1Flat, Empak cst, TTV<3μm | |
B987 | 11 | n-type Si:P | [112-5° towards[11-1]] ±0.5° | 4" | 795 | E/E | FZ >100 | SEMI, 1Flat, in Empak, TTV<4μm, Lifetime>2,000μs | |
6847 | 75 | Intrinsic Si:- | [100] | 4" | 1,000 | P/P | FZ >20,000 | SEMI Prime, 1Flat, Empak cst | |
H775 | 11 | p-type Si:B | [110] ±0.5° | 4" | 1,650 | P/E | 10--15 | SEMI Prime, 1Flat, Individual cst | |
F153 | 6 | p-type Si:B | [100] | 4" | 3,000 | P/P | 10--20 | SEMI Prime, 1Flat, Individual cst | |
F986 | 15 | p-type Si:B | [100] | 4" | 1,600 | P/P | ~6 | SEMI Prime, 1Flat, Individual cst, Groups of 5 + 15 wafers | |
4829 | 15 | p-type Si:B | [100] | 4" | 2,100 | P/E | 1-100 | SEMI Prime, 1Flat, Individual cst, Groups of 5 wafers | |
D594 | 5 | p-type Si:B | [100] | 4" | 3,175 | P/P | 1--10 | SEMI Prime, 2Flats, Individual cst, TTV<8μm | |
6952 | 4 | p-type Si:B | [100] | 4" | 3,100 | P/P | 0.006-0.009 | SEMI Prime, 2Flats, Individual cst, Group of 4 wafers |
Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that surface); Material - CZ unless noted | |||||||||
Note: Items sold in quantities of 25, unless noted | |||||||||
Item | Qty in | Material | Orient. | Diam. | Thck | Surf. | Resistivity | Comment | |
Stock | (μm) | Ωcm | |||||||
S5610 | 15 | p-type Si:B | [100] | 3" | 890 ±13 | P/P | FZ 0.5-10.0 | SEMI, Empak cst, TTV<8μm | |
7059 | 43 | n-type Si:P | [100] | 3" | 850 | P/E | FZ 40-140 | SEMI Prime, 2Flats, Empak cst | |
5754 | 9 | n-type Si:P | [211] ±0.5° | 3" | 1,016 | P/P | FZ 25-75 | Prime, 1Flat, Empak cst | |
3273 | 50 | n-type Si:P | [111] ±0.5° | 3" | 1,000 | P/E | FZ >5,000 | SEMI Prime, 2Flats, Empak cst | |
6101 | 1 | Intrinsic Si:- | [100] | 3" | 4,000 | P/P | FZ >8,000 | Test, Scratched, 1Flat, Individual cst | |
D048 | 1 | Intrinsic Si:- | [111] ±0.5° | 3" | 1,975 | P/P | FZ >20,000 | Test, NO Flats, Individual cst, Scratches on both sides | |
J056 | 3 | p-type Si:B | [100] | 3" | 3,000 | P/P | 4--6 | Prime, NO Flats, Group of 3 wafers | |
K056 | 3 | p-type Si:B | [100] | 3" | 5,000 | P/E | 1--20 | Prime, NO Flats, Individual cst | |
6949 | 8 | p-type Si:B | [111] | 3" | 2,300 | P/P | 4--7 | SEMI Prime, 1Flat, Individual cst | |
G046 | 50 | n-type Si:P | [510] ±0.5° | 3" | 1,000 | P/E | 5--10 | Prime, NO Flats, Empak cst | |
S5580 | 5 | n-type Si:P | [100] ±1° | 3" | 2,286 ±13 | P/P | 15-28 | SEMI Prime, 1Flat, TTV<1μm, Sealed in individual csts, in groups of 5 wafers | |
6366 | 13 | n-type Si:P | [100] | 3" | 1,500 | P/E | 5--7 | SEMI Prime, 2Flats, Empak cst | |
6308 | 8 | n-type Si:P | [100] | 3" | 6,000 | P/E | 1--20 | SEMI Prime, 1Flat, Individual cst< In sealed group of 8 wafers | |
5721 | 29 | n-type Si:P | [111] ±0.5° | 3" | 1,500 | P/P | 31-35 | SEMI Prime, 1Flat, Empak cst, Cassettes of 10 + 10 + 9 wafers | |
1263 | 5 | n-type Si:P | [111] ±0.5° | 3" | 1,400 | P/E | 25-35 | SEMI Prime, 1Flat, in single wafer cassettes, sealed in groups of 5 | |
H136 | 2 | n-type Si:P | [111] | 3" | 10,000 | P/E | 20-60 | SEMI Prime, 1Flat, Individual cst | |
6198 | 5 | n-type Si:P | [111] | 3" | 3,000 | P/E | 10--20 | SEMI Prime, 2Flats, Individual cst, Groups of 2 + 3 wafers | |
E206 | 100 | n-type Si:P | [111-5° towards[110]] ±0.25° | 3" | 1,000 | P/E | >5 | SEMI Prime, 1Flat, hard cst | |
G206 | 19 | n-type Si:P | [111-5° towards[110]] ±0.25° | 3" | 1,000 | P/E | >5 | SEMI Prime, 1Flat, in hard cassettes of 6, 6 & 7 wafers | |
1207 | 25 | n-type Si:P | [111-5° towards[110]] ±0.25° | 3" | 1,300 | P/E | >5 | SEMI Prime, 1Flat, hard cst | |
S5804 | 25 | n-type Si:P | [111-0.5° towards[110]] ±0.25° | 3" | 1,400 | E/E | >5 | SEMI, 1Flat, LaserMark, in opened hard cast |
Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that surface); Material - CZ unless noted | |||||||||
Note: Items sold in quantities of 25, unless noted | |||||||||
Item | Qty in | Material | Orient. | Diam. | Thck | Surf. | Resistivity | Comment | |
Stock | (μm) | Ωcm | |||||||
D769 | 8 | p--type Si:B | [111] ±0.5° | 2" | 500 | P/P | FZ 5,000--6,500 | SEMI Test (in unsealed cassette), 1Flat | |
2894 | 13 | n--type Si:P | [110] | 2" | 900 | P/E | FZ 130--350 | SEMI Prime, 1Flat, hard cst | |
4032 | 8 | n--type Si:P | [110] ±0.5° | 2" | 900 | P/E | FZ 50--100 | SEMI Prime, hard cst, Primary Flat only at [111]±0.5° | |
6187 | 75 | p--type Si:B | [100] | 2" | 1,000 | P/E | 1--10 | SEMI Prime, 2Flats, hard cst | |
U206 | 59 | p--type Si:B | [100] | 2" | 3,150 | C/C | >0.5 | 1Flat | |
5918 | 16 | p--type Si:B | [100] | 2" | 3,000 | P/E | 0.015--0.020 | Groups of 5 + 5 + 6 wafers, Test, 2Flats, Individual cst, Wafers with defects | |
6563 | 6 | n--type Si:P | [100] | 2" | 3,175 | P/E | 1--3 | Prime, NO Flats, Individual cst | |
4333 | 5 | n--type Si:P | [100] ±1.0° | 2" | 6,000 | P/E | 1--10 | SEMI Prime, 2Flats, Individual cst | |
4501 | 2 | n--type Si:As | [100] | 2" | 7,050 | P/E | 0.0031--0.0038 | SEMI Prime, 2Flats, Individual cst Group of 2 wafers | |
5238 | 6 | n--type Si:P | [111] | 2" | 5,000 | P/E | 15--20 | SEMI Prime, 1Flat, Individual cst, (group of 6 wafers) | |
4878 | 1 | n--type Si:P | [111] ±0.5° | 2" | 6,000 | P/E | 1--10 | SEMI Prime, 1Flat, Individual cst | |
4958 | 5 | n--type Si:Sb | [111] | 2" | 2,900 | P/P | 0.013--0.015 | Prime, NO Flats, Individual cst, Group of 5 wafers |