III-V semiconductors are great for optoelectronic use. III-V crystallize with high degree of stoichiometry.
We have both n-type and p-type. Our III-V wafers have high carrier mobilities and direct energy gaps.
Gallium Arsenide (GaAs)
second most common in use after silicon, commonly used as substrate for other III-V semiconductors, e.g. InGaAs and GaInNAs. Brittle. Lower hole mobility than Si, P-type CMOS transistors unfeasible. High impurity density, difficult to fabricate small structures. Used for near-IR LEDs, fast electronics, and high-efficiency solar cells. Very similar lattice constant to germanium, can be grown on germanium substrates.
Gallium Animonide (GaSb)
Used for infrared detectors and LEDs and thermophotovoltaics. Doped n with Te, p with Zn.
Indium Phosphide (InP)
Commonly used as substrate for epitaxial InGaAs. Superior electron veloxity, used in high-power and high-frequency applications. Used in optoelectronics.
Indium Arsenide (InAs)
Used for infrared detectors for 1â€"3.8Â Âµm, cooled or uncooled. High electron mobility. InAs dots in InGaAs matrix can serve as quantum dots. Quantum dots may be formed from a monolayer of InAs on InP or GaAs. Strong photo-Denber emitter, used as aÂ terahertz radiation source.
Wafers in Stock