Gallium Antimonide (GaSb) Compound Semiconductor Wafer

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Gallium Antimonide (GaSb) Solar Cells Reach Efficiency of 44.5%

"Around 99% of the power contained in direct sunlight reaching the surface of Earth falls between wavelengths of 250 nm and 2500 nm, but conventional materials for high-efficiency multijunction solar cells cannot capture this entire spectral range," says Matthew Lumb, lead author of the study and a research scientist at George Washington University. "Our new device (Gallium Antimonide GaSb) is able to unlock the energy stored in the long-wavelength photons, which are lost in conventional solar cells, and therefore provides a pathway to realizing the ultimate multijunction solar cell."

Researchers have develped a way to make GaSb solar cells that can capture 44.5% of the suns rays using cncentrator photovoltaic (CPV) cells. The cells optics magnify sunlight onto a microscale solar cell at a concentration ratio of 744 suns. Because of their small size (less than one millimeter square), solar cells utilizing more-sophisticated materials can be developed cost-effectively. Current silicon solar cells as well as Cadmium Telluride can only reach around 24% solar efficiency.

Currently the process to manufacture GaSb solar cells is cost prohibitive, but uses in space where price is not a concern is where you'll most likely see these highly-efficient solar cells.

 

Gallium Antimonide Wafers Applications Include:

Gallium Antimonide Wafer
  • Infrared detectors
  • Infrared LEDs and lasers and transistors
  • Thermophotovoltaic systems

Below is just some of our inventory. Please let us know or if you need custom specs.

 

Tellerium (Te) Doped Gallium Antimonide (GaSb) Wafers

Item #L520 - 2" N/Te (100) 420um Double side Polished (DSP)

Item #9761 - 2" N/Te [100-6° towards[111]] ±0.5° 400um Single Side Polished (SSP)

 

Undoped Gallium Antimonide (GaSb) Wafers

Item #E521 - 2" Undoped (100) 350um Single Side Polished (SSP)

 

Silicon (Si) Doped Gallium Antimonide (GaSb) Wafers

Item #2192 - 2" P/Si (100) 450um Single Side Polished (SSP)

Item #D192 - 2" P/Si (100) 450um Single Side Polished (SSP)

 

Zinc (Zn) Doped Gallium Antimonide (GaSb) Wafers

Item #D448 - 2" P/Zn [111B] ±0.5° 450um Single Side Polished (SSP)

 

Gallium Antimonide Wafer Bonding

Recently a researcher client asked: I am interesting in Wafer Bonding service. In particular I would like to bond GaSb wafers of 2" with silicon wafers (2" or 4"). Both wafers would be completely metalized and the bond should be taken place between the metal of the two wafers.

 

UniversityWafer, Inc. Answer:

I understand that you have a set of 2"Ø GaSb wafers already polished and with a metallization layer,
and you have a corresponding set of 2"Ø Silicon wafers already polished and with a metallization layer,
and that you want the service of bonding these together, metallization layer to metallization layer.

I presume that the GaSb wafers have Epi layers on their front side and metallization on their polished back side.
I presume that the Silicon wafers have metallization on their polished front side, and their back side is unpolished but etched Silicon. I presume both wafers have the same Flats, aligned to match each other. These details are of secondary importance.

What I do need to know to suggest a bonding process and estimate the cost is the following;

 

1. Thickness of GaSb wafers
2. Composition and thickness of the GaSb wafer metallization layer
3. Thickness of Si wafers
4. Composition and thickness of the Si wafer metallization layer
5. Do you allow any bonding agents between the two metallization layers
6. Temperature that the bond is expected to withstand
7. Surface condition of the metallized surfaces, likelihood of scratches, digs or pits, orange peels effect, or other properties that favor the formation of gas bubbles or voids between the wafers.
8. How many pairs of wafers do you want bonded.

Please answer above 8 points and we shall go from there.

 

Researcher:

All what you presume is right. And regarding the information you need:

1. Thickness of GaSb wafers:
500 microns

2. Composition and thickness of the GaSb wafer metallization layer:
300nm of gold

3. Thickness of Si wafers:
500 microns

4. Composition and thickness of the Si wafer metallization layer:
300nm of gold

5. Do you allow any bonding agents between the two metallization layers
Yes, as far as they have good thermal and electrical conductivity

6. Temperature that the bond is expected to withstand
200ºC (473K)

7. Surface condition of the metallized surfaces, likelihood of
scratches, digs or pits, orange peels effect, or other properties that
favor the formation of gas bubbles or voids between the wafers.
The surfaces are flat, no damage or bubble are expected

8. How many pairs of wafers do you want bonded.
I want to bond 10 pairs of wafers (so, 10 bonding process)

I need this infromation to distribute the budget in a project. So I just
need an approximate cost.

 

UniversityWafer Quoted: Gold Plated GaSb

 

e shall offer:
Item   Qty.   Description
GR35.  10   Bond pairs of supplied 2"Ø wafers gold plated one on side, gold layer to gold layer.
                    WaferA: SEMI standard 2"Ø×500µm Double-side-polished GaSb(100) wafers,
                                  with gold (Au) layer 0.3µm thick on polished back-side
                    Wafer B: SEMI standard 2'Ø×500µm Double-side-polished Silicon Si(100) wafers,
                                   with gold (Au) layer 0.3µm thick on polished front-side
                    Vacuum bond Back side of wafer A to Front side of wafer B (gold layer to gold layer)
                    Bond must be electrically conductive, mechanically strong and withstand heating to 200ºC,
                    The Front side of wafer A and Back side of wafer B must remain in polished condition.
We are working on this RFQ, we should have a quote in a few days.