Indium Antimonide (InSb) Undoped, Tellerium, Germanium Doped

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Indium Antimonide Substrates Epi-Ready


Indium Antimonide (InSb) Single crystals are grown in a pure fused silica system by the Czochralski method from multiple zone refined polycrystalline ingot.

Electronic And Crystallographic Specifications.

Indium Antimonide Bandgap Detector

Raytheon's AIM-9X missile, incorporates an Indium Antimonide (InSb) bandgap detector array

InSb - Indium Antimonide Inventory

Undoped Indium Antimonide Wafers

Item #N797 - 2" Undoped (100) 500um SSP

N-type Tellerium (Te) Doped Indium Antimonide Wafers

Item #5138 - 2" N/Te [111A] ±0.5° 525um DSP

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Item Qty in
Stock
Material Orient. Diam
(mm)
Thck
(μm)
Surf. Resistivity
Ωcm
Nc
a/cm3
Mobil
cm2/Vs
EPD
/cm2
Comment
N797 3 undoped InSb:- [100] 2" 500 P/E n-type <2E14 @77ºK >40,000 @77ºK <300 EJ Flats; Epi Ready
5138 8 n-type InSb:Te [111A] ±0.5° 2" 525 P/P 0.0230-0.0313 (3-8)E14 400,000-450,000 <50 1 Flat; Epi Ready