Indium Phosphide (InP) Substrates
Indium Phopshide (InP)
InP's exceptional electron velocity over silicon and gallium arsenide substrates is used in high-power and high-frequency electronics.
Indium Gallium Arsenide (InGaAs) are used in pseudomorphic heterojunction bipolar transistor that operate at 604 GHz.
InP's direct bandgap makes it into optoelectronics devices like laser diodes that are used in the optical telecommunications industry, to enable wavelength-division multiplexing.
InP Wafer Fast Quote Guaranteed!
Below are just some of the Indium Phosphide wafers that we have in stock.
We also have InP specials that you can buy online here!
| Item | Qty in Stock |
Material | Orient. | Diam (mm) |
Thck (μm) |
Surf. |
|---|---|---|---|---|---|---|
| 5176 | 2 | InP:S+Zn | [100] | 2" | 400 | SSP |
| 5243 | 4 | SI InP:Fe | [100] | 2" | 350 | SSP |
| C745 | 3 | SI InP:Fe cube | [100] | 8x4 | 3,500 | DSP |
| D745 | 18 | SI InP:Fe cube | [100] | 8×4 | 3,500 | DSP |
| 5052 | 5 | undoped InP:- | [100] | 2" | 350 | SSP |
| F745 | 3 | undoped InP:- Seed crystal | [100] | 16x16 | 75,000 | |
| G745 | 10 | undoped InP:-Seed crystal | [100] | 8x8 mm | 75,000 | |
| K661 | 5 | undoped InP:- | [111A] ±0.5° | 2" | 350 | SSP |
| B745 | 7 | n-type InP:S | [100] | 2" | 2,000 | SSP |
| L206 | 0.55 | InP:(S+Zn) Ingot | [100] | 2" | ||
| J206 | 1.35 | n-type InP:S Ingot | [100] | 2" | 133,400 | |
| 2206 | 1.2 | n-type InP:S Ingot | [100] | 2" | 117,490 | |
| O206 | 0.3 | p-type InP:Zn Ingot | [100] | 2" | 31,750 | |
| P206 | 0.63 | InP:(S+Zn) Ingot | [100] | 2" | 33,500 | |
| N206 | 1.41 | n-type InP:S Ingot | [100] | 2" | 114,300 | |
| M206 | 1.4 | n-type InP:S Ingot | [100] | 2" | 95,000 | |
| R206 | 3 | n-type InP:S Ingot | [100] | 2" | 101,600 | |
| S206 | 0.45 | n-type InP:S Ingot | Poly | 2" | 20,000 | |
| H206 | 0.57 | n-type InP:S Ingot | [100] | 2" | 54,000 | |
| K206 | 0.66 | n-type InP:S Ingot | [100] | 2" | 63,500 | |
| I206 | 0.26 | n-type InP:S Ingot | [100] | 2" | 28,600 | |
| Q206 | 1.48 | n-type InP:S Ingot | [100] | 2" | 158,750 | |
| P050 | 5 | n-type InP:(S+Zn) | [100] | 2" | 400 | SSP |
| P040 | 1 | n-type InP:S | [100] | 2" | 350 | SSP |
| 41 | 2 | n-type InP:S | [100] | 2" | 400 | SSP |
| P041 | 2 | n-type InP:S | [100] | 2" | 400 | SSP |
| P029 | 5 | n-type InP:S | [100] | 2" | 400 | SSP |
| 474A | 3 | n-type InP:S | [100] | 2" | 400 | SSP |
| 474 | 4 | n-type InP:S | [100] | 2" | 400 | SSP |
| 636 | 4 | n-type InP:S | [115] | 2" | 400 | SSP |
Indium Phosphide Substrates are Great For:
- Lasers
- Photodetectors
- HEMTs
- HBTs
Indium Phosphide (InP) for High-Power Electronics
When Silicon and Gallium Arsenide won't work for your High-Power, High-Frequency Electronics, choose Indium Phosphide wafers for the results you desire!
Spaced Based Indium Phosphide (InP) for long duration missions in medium-to-high radiation orbits
