Indium Phosphide (InP) Substrates

Indium Phopshide (InP)

InP's exceptional electron velocity over silicon and gallium arsenide substrates is used in high-power and high-frequency electronics.

Indium Gallium Arsenide (InGaAs) are used in pseudomorphic heterojunction bipolar transistor that operate at 604 GHz.

InP's direct bandgap makes it into optoelectronics devices like laser diodes that are used in the optical telecommunications industry, to enable wavelength-division multiplexing.

 

InP Wafer Fast Quote Guaranteed!

 

What Substrate Should I Use for THz modulation?

A scientist asked the following:

I am interested in using them for THz modulation. I basically need a semiconductor with low bandgap, in order to use infrared light (1030 nm) to photo-excite carriers, but at the same time I'd need it to be almost dispersionless and with low absorption in the THz region. I am currently using Germanium, but I would like to explore other possibilities. Would have any suggestions, by any chance?

 

UniversityWafer, Inc. Quoted:

 

Lowest Energy Gap Semiconductors

For Indium Phosphide we suggest the following. I would suggest Gallium Antimonide (GaSb) and Indium Antimony (InSb), for these are the lowest energy gap semiconductors.

For THz modulators people also use InP. We have the following cubes of InP that were prepared specifically for such use.

 

Description: All sides polished, 8.0×4.0mm is (001), 4.0×3.5mm is (110), 8.0×3.5mm is (1,-1,0)
Item	Material	Orient.	Diam (mm)	Thck(μm)	Pol	ResistivityΩcm	Nca/cm3	Mobilcm2/Vs	EPD/cm2
D745	SI InP:Fe cube	[100]	8×4	3,500	P/P	2.50E+07	1.30E+08	2,330	6.80E+04

 

 

Below are just some of the Indium Phosphide wafers that we have in stock.

 

We also have InP specials that you can buy online here!