InP's exceptional electron velocity over silicon and gallium arsenide substrates is used in high-power and high-frequency electronics.
Indium Gallium Arsenide (InGaAs) are used in pseudomorphic heterojunction bipolar transistor that operate at 604 GHz.
InP's direct bandgap makes it into optoelectronics devices like laser diodes that are used in the optical telecommunications industry, to enable wavelength-division multiplexing.
We also have InP specials that you can buy online here!
Item | Qty in Stock |
Material | Orient. | Diam (mm) |
Thck (μm) |
Surf. |
---|---|---|---|---|---|---|
5176 | 2 | InP:S+Zn | [100] | 2" | 400 | SSP |
5243 | 4 | SI InP:Fe | [100] | 2" | 350 | SSP |
C745 | 3 | SI InP:Fe cube | [100] | 8x4 | 3,500 | DSP |
D745 | 18 | SI InP:Fe cube | [100] | 8×4 | 3,500 | DSP |
5052 | 5 | undoped InP:- | [100] | 2" | 350 | SSP |
F745 | 3 | undoped InP:- Seed crystal | [100] | 16x16 | 75,000 | |
G745 | 10 | undoped InP:-Seed crystal | [100] | 8x8 mm | 75,000 | |
K661 | 5 | undoped InP:- | [111A] ±0.5° | 2" | 350 | SSP |
B745 | 7 | n-type InP:S | [100] | 2" | 2,000 | SSP |
L206 | 0.55 | InP:(S+Zn) Ingot | [100] | 2" | ||
J206 | 1.35 | n-type InP:S Ingot | [100] | 2" | 133,400 | |
2206 | 1.2 | n-type InP:S Ingot | [100] | 2" | 117,490 | |
O206 | 0.3 | p-type InP:Zn Ingot | [100] | 2" | 31,750 | |
P206 | 0.63 | InP:(S+Zn) Ingot | [100] | 2" | 33,500 | |
N206 | 1.41 | n-type InP:S Ingot | [100] | 2" | 114,300 | |
M206 | 1.4 | n-type InP:S Ingot | [100] | 2" | 95,000 | |
R206 | 3 | n-type InP:S Ingot | [100] | 2" | 101,600 | |
S206 | 0.45 | n-type InP:S Ingot | Poly | 2" | 20,000 | |
H206 | 0.57 | n-type InP:S Ingot | [100] | 2" | 54,000 | |
K206 | 0.66 | n-type InP:S Ingot | [100] | 2" | 63,500 | |
I206 | 0.26 | n-type InP:S Ingot | [100] | 2" | 28,600 | |
Q206 | 1.48 | n-type InP:S Ingot | [100] | 2" | 158,750 | |
P050 | 5 | n-type InP:(S+Zn) | [100] | 2" | 400 | SSP |
P040 | 1 | n-type InP:S | [100] | 2" | 350 | SSP |
41 | 2 | n-type InP:S | [100] | 2" | 400 | SSP |
P041 | 2 | n-type InP:S | [100] | 2" | 400 | SSP |
P029 | 5 | n-type InP:S | [100] | 2" | 400 | SSP |
474A | 3 | n-type InP:S | [100] | 2" | 400 | SSP |
474 | 4 | n-type InP:S | [100] | 2" | 400 | SSP |
636 | 4 | n-type InP:S | [115] | 2" | 400 | SSP |
When Silicon and Gallium Arsenide won't work for your High-Power, High-Frequency Electronics, choose Indium Phosphide wafers for the results you desire!