Gallium Phosphide (GaP) III-V Semiconductor Wafers

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Gallium Phosphide for Terahertz (THz) Radiation Generation

A researcher asked:

We are looking for a GaP <110>  sample for THz generation. The ideal thickness is 0.5mm or 1mm.

The wafer should be polished on both sides and, it possible, AR-coated at 1030nm.

Solution:

GaP 25mm x 25mm Undoped (110)+/-0.5 deg 1,000 micron Double Side Polished Epi Ready

Other diameters available. Researcher was looking for least expenseive.

UniversityWafer’s Gallium Phosphide Substrates Helps Develop Patterned Surfaces at Nanometer Scale

UniversityWafer provided researchers from Lawrence Berkeley National Laboratory with single crystalline (100) GaP wafers. These wafers were p-type doped with zinc. Their resistivity was 0.3 Ω cm with an SSP epi-ready finish. This process was used to establish a new way to absorb light and produce clean, environmentally friendly energy.

 

 

We have a large selection of Gallium Phoshide Wafers in Stock. Below are some of the specs

Great for low cost light emitting diodes (LEDs) gallium phosphide (gap) wafers

Item Qty Type/Dopant Ori Dia
(mm)
Thck
(μm)
Pol Res Ωcm Nc
a/cm3
Mobil
cm2/Vs
EPD
/cm2
Comment

Undoped Gallium Phosphide

5229 10

undoped

[100] 2" 350 P/P n-type 0.104 <4E16 >141 <1E5 EJ Flats; Epi Ready
G543 1 undoped GaP:- [110] ±0.5° 5×6mm 400 P/P n-type >0.9 <5E16 140 <4.7E4 Ohmic Contacts on the 0.4x6mm edges
4898 2 undoped GaP:- [111B] ±0.5° 2" 400 P/E n-type 240 1.6E14 160 <5E4 EJ Flats, Epi Ready

N-Type Gallium Phosphide: Sulfer Doped

5161 2

n-type GaP: Sulfer Doped

[100-10° towards[110]] ±1° 2" 302 P/E 0.115 4.75E17 115 <8E4 EJ Flats; Epi Ready
4348 1 n-type GaP:S [100-6° towards[111]] ±1° 2" 400 P/E 0.058 9.9E17 107 <5.3E4 SEMI Flats; Epi Ready
5170 1 n-type GaP:S [111A] ±0.5° 2" 350 P/E 0.043 1.8E18 81 <1E5 SEMI Flats; Epi Ready

P-type Gallium Phosphide : Zinc (Zn)

5034 1

p-type GaP:
Zinc (Zn)

[100] 2" 400 P/E 0.164 5.5E17 69 <5.3E4 SEMI Flats; Epi Ready, Wafers have small edge chips near PF
4324 1 p-type GaP:Zn [111B] ±0.5° 2" 350 P/E 0.34 2.4E17 75 <5E4 SEMI Flats (PF@[110], SF@[112]), Epi Ready, Wafer unsealed

Cadmium-Doped Gallium Phosphide 

99B 15 p-type GaP:Cd [100] 2" 400 C/C 2.2 2.5E16 120 <8E4 P/E or P/P, SEMI/EJ Flats, to be polished, MOQ=5 wafers
99A 1 p-type GaP:Cd [100] 2" 400 P/E 2.0 2.5E16 120 <8E4 SEMI Flats; Epi Ready, doped with Cadium; More such wafers can be made

Chromium Doped Gallium Phosphide

178 7 SI GaP:Cr [100] 2" 400 P/E 2E10 4.1E6 75 <5E4 US Flats; Black spots on surface
219A 1 undoped GaP:- [100] 3" 400 P/P n-type 0.21-0.29 (1.5-2.3)E17 128-140 <2E5 SEMI Flats; Chips at edge
261 4 undoped GaP:- [100] 2" 450 P/E n-type >34 <1.21E15 60-140 <5E4 SEMI Flats; Bubbles near edge
358A 10 undoped GaP:- [100] 2" 400 P/E n-type >1E12 <1E4 <50   Semi-Insulating, Compensated material
347A 1 undoped GaP:- [100] 2" 300 P/P n-type 1.4E8 2.9E8 150 <5E4 EJ Flats; Edge Chips at Secondary Flat
287A 13 undoped GaP:- [100] 2" 450 C/C n-type 1E7 4E9 161 <5.3E4 P/E or P/P, SEMI/EJ Flats, to be polished, MOQ=5 wafers
112 1 undoped GaP:- [100] 2" 600 P/P n-type 2.15 1.6E16 170 <6.2E4 Epi Ready; Back-side has micro-scratches
249 2 undoped GaP:- [100] 2" 1,000 P/P n-type 0.24 2E17 130 <8E4 EJ Flats, Epi Ready
249B 1 undoped GaP:- [100] 2" 5,000 C/C n-type 0.17-0.24 (2-3.2)E17 119-130 <8E4 Unpolished
170A 1 undoped GaP:- [110] ±0.5° 2" 250 P/E n-type 0.94-320.00 (3.7-560)E14 134-164   Epi Ready
337 8 undoped GaP:- [111B] ±0.5° 2" 400 P/E n-type >240 <1.6E14 150-160 <8E4 111A/111B, SEMI/EJ Flats, P/E or P/P, to be polished, MOQ=5 wafers
166 9 undoped GaP:- [111B] ±0.5° 2" 400 C/C n-type >0.35 <1E17 >140 <5E4 111A/111B, SEMI/EJ Flats, P/E or P/P, to be polished, MOQ=5 wafers
166A 4 undoped GaP:- [111B] ±0.5° 2" 400 P/E n-type >0.35 <1E17 >140 <5E4 EJ Flats; Epi Ready
337B 1 undoped GaP:- [111B] ±0.5° 2" 400 P/E n-type 160 1.6E14 160 <5E4 EJ Flats, TEST grade - 6mm scratch 5mm from edge
252A 1 undoped GaP:- [111B] 2" 400 P/E n-type 86 4E14 180 <6E4 EJ Flats, Minor defects on the edge
349 9 undoped GaP:- [111B] ±0.5° 2" 400 C/C n-type 2.3-3.2 (1.2-1.6)E16 165 <5E4 111A/111B, SEMI/EJ Flats, P/E or P/P, to be polished, MOQ=5 wafers
88C 1 n-type GaP:S [100-2° towards[111]] ±0.5° 2" 400 P/E 0.20 2.9E17 110 <2E5 SEMI Flats; TEST grade - 0.3mm chip on edge
88D 1 n-type GaP:S [100-2° towards[111]] ±0.5° 2" 400 P/E 0.20 2.9E17 110 <2E5 SEMI Flats; Epi Ready, with edge chip ~0.3mm
296 3 n-type GaP:S [100-10° towards[110]] ±1° 2" 302 ±20 P/E 0.115 4.75E17 115 <8E4 EJ Flats; Epi Ready
280 2 n-type GaP:S [100-10° towards[110]] ±1° 2" 302 ±20 P/E 0.11 4.79E17 112 <5.5E4 EJ Flats; Epi Ready
268 2 n-type GaP:S [100-10° towards[110]] ±1° 2" 302 P/E 0.11 5.3E17 105 <8.9E4 EJ Flats; Epi Ready
304 3 n-type GaP:S [100] 2" 350 P/E 0.065 8.9E17 107 <6E4 US Flats; Epi Ready
304B 1 n-type GaP:S [100] 2" 350 P/E 0.065 8.9E17 107 <6E4 US Flats, Epi Ready, Scratch on back-side
304D 11 n-type GaP:S [100] 2" 680 C/C 0.064 9.1E17 106 <6E4 SEMI/EJ Flats, P/E or P/P, to be polished, MOQ=5 wafers
304C 2 n-type GaP:S [100] 2" 400 P/P 0.064 9.1E17 108 <6E4 US Flats; Epi Ready
78B 1 n-type GaP:S [100-6° towards[111]] ±1° 2" 400 P/E 0.058 9.9E17 107 <5.3E4 SEMI Flats; Epi Ready
244 3 n-type GaP:S [100-10° towards[011]] ±1° 2" 350 ±10 P/E 0.051 1.4E18 88 <6.6E4 SEMI Flats; Epi Ready
129A 3 n-type GaP:S [100] 2" 400 P/E 0.0364 1.91E18 90 <7E4 US Flats; Epi Ready
276 5 n-type GaP:S [100-6° towards[111B]] ±1° 2" 400 P/E 0.0375 2.3E18 72 <5.8E4 EJ Flats; Epi Ready
010C 2 n-type GaP:S [111B-6° towards[1,1,2]] ±1° 2" 400 P/E 0.140 4.1E17 107 <6E4 SEMI Flats; Epi Ready
009 3 n-type GaP:S [111B] ±0.5° 2" 275 P/E 0.136 4.37E17 105 <5E4 NO Flats; Epi Ready
010A 2 n-type GaP:S [111A-6° towards[112]] ±1° 2" 400 P/E 0.125 4.5E17 110 <6E4 EJ Flats (PF@[1,-1,0], SF@[-1,-1,2]), Epi Ready
012A 1 n-type GaP:S [111B] ±0.5° 2" 400 P/E 0.10 5.9E17 104 <7.8E4 EJ Flats (PF@[-1,1,0], SF@[1,1,-2]), Epi Ready
012B 1 n-type GaP:S [111B] ±0.5° 2" 400 P/E 0.075 8.6E17 96 <7.8E4 EJ Flats (PF@[-1,1,0], SF@[1,1,-2]); Epi Ready
148C 1 n-type GaP:S [111A] ±0.5° 2" 350 P/E 0.043 1.6E18 90 <1.3E5 SEMI Flats; Epi Ready
148D 1 n-type GaP:S [111A] ±0.5° 2" 350 P/E 0.043 1.8E18 81 <1E5 SEMI Flats; Epi Ready
148E 1 n-type GaP:S [111A] ±0.5° 2" 350 P/E 0.042 (1.8-2)E18 76 <2E5 US Flats; Epi Ready
148F 1 n-type GaP:S [111B] ±0.5° 2" 350 P/E 0.042 (1.8-2)E18 76 <2E5 EJ Flats; Epi Ready
148A 1 n-type GaP:S [111A] ±0.5° 2" 350 P/E 0.042 2E18 76 <2E5 SEMI Flats; TEST grade, not fully polished
148B 1 n-type GaP:S [111B] 2" 400 P/P 0.041 2E18 72 <2E5 EJ Flats; TEST grade - Small scratch
242A 6 n-type GaP:S [311] ±0.5° 2" 540 P/E 0.06 1E18 100 <5E4 Epi Ready
284C 5 p-type GaP:Zn [100-6° towards[111A]] ±1° 2" 400 P/E 0.44 2.2E17 64 <5.7E4 SEMI Flats; Epi Ready
284B 2 p-type GaP:Zn [100-2° towards[110]] ±0.5° 2" 400 P/E 0.43 2.4E17 61 <4.7E4 SEMI Flats; Epi Ready
285C 1 p-type GaP:Zn [100] 2" 1,000 P/E 0.088 1.3E18 56 <4E4 SEMI Flats; Epi Ready
344A 1 p-type GaP:Zn [100] 2" 350 P/E 0.045-0.053 (1.8-2.3)E18 58-64 <5E4 SEMI Flats; Epi Ready
344B 1 p-type GaP:Zn [100] 2" 350 P/E 0.045-0.053 (1.8-2.3)E18 58-64 <5E4 SEMI Flats; Epi Ready, Back-side poorly lapped
344C 2 p-type GaP:Zn [100] 2" 400 P/E 0.045-0.053 (1.8-2.3)E18 58-64 <5E4 SEMI Flats; TEST grade - Back-side scratched
344D 4 p-type GaP:Zn [100] 2" 400 P/E 0.045-0.053 (1.8-2.3)E18 58-64 <5E4 SEMI Flats; Epi Ready
328 3 p-type GaP:Zn [100-6° towards[111B]] ±1° 2" 400 P/E 0.047 2.2E18 60 <5.3E4 SEMI Flats; Epi Ready
319 2 p-type GaP:Zn [111B] ±0.5° 2" 450 P/E 0.069-0.074 (1.3-1.4)E18 65-66 <5E4 SEMI Flats; Epi Ready
319B 4 p-type GaP:Zn [111B] ±0.5° 2" 400 P/P 0.069-0.074 (1.3-1.4)E18 65-66 <5E4 SEMI Flats; Epi Ready
246 1 p-type GaP:Zn [311] ±1° 2" 350 ±10 P/E 0.11 8.7E17 68 <2.5E4 SEMI Flats (PF@[110], SF 90° CCW from PF), Epi Ready
243A 10 p-type GaP:Zn [311] ±0.5° 2" 350 P/E 0.085 1.15E18 64 <2.2E4 SEMI Flats; Epi Ready