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"We need a InAs wafer, undoped, both sides polished. 0.5 mm thickness, 1" diameter, for an infrared optical filter."
Our Solution: 2" Undoped InAs, [100] orientation, EPD<15,000/cm².
Related Materials
What is Indium Arsenide?
Indium arsenide (InAs) is a member of the III-V semiconductor family. It is characterized by its superior electron mobility (reaching up to 33,000 cm²/V·s at room temperature) and narrow direct bandgap (0.354 eV).
These properties make it ideal for detecting infrared radiation (1–3.8 µm range) and for use in ultra-high-speed transistors where silicon cannot perform efficiently.
Available InAs Inventory
We supply Undoped, Zn-doped (P-type), and S-doped (N-type) wafers.
| Item | Type/Dopant | Orientation | Diameter | Thickness | Polish |
|---|---|---|---|---|---|
| 5272 | Undoped InAs | [100] | 2" | 350µm | SSP |
| H135 | P-type InAs:Zn | [100] | 2" | 500µm | SSP |
| 130 | Undoped InAs | [100] | 3" | 500µm | SSP |
Key Applications
1. Infrared Detectors & Optoelectronics
InAs is widely used for constructing photovoltaic photodiodes and diode lasers. Its narrow bandgap allows it to absorb and emit light in the mid-infrared spectrum. It is often alloyed with Gallium Arsenide (GaAs) to form InGaAs, which is standard for fiber optic communications (1.3 µm and 1.55 µm wavelengths).
2. Hall Effect Sensors
Because of its high electron mobility and large Hall coefficient, InAs is the material of choice for Hall Effect sensors. These sensors are used to measure magnetic fields with high precision.
Real World Application: In 3D printing, a Hall sensor attached to the extruder can measure the distance to the print bed for automatic leveling, ensuring precise prints without manual calibration.
3. High-Speed Electronics
InAs is used in High Electron Mobility Transistors (HEMTs) and Heterojunction Bipolar Transistors (HBTs). Its low effective electron mass allows for faster switching speeds at lower voltages compared to silicon or GaAs devices.
Material Properties
InAs has a cubic crystal structure (Zincblende). It is often grown on Indium Phosphide (InP) substrates to match lattice constants in ternary alloys. While it is a robust material, indium is relatively rare (0.1 ppm in Earth's crust), making these wafers more specialized than silicon.