PECVD Nitride on Silicon Wafers

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PECVD Nitride on Silicon

PECVD nitride is an alternative to LPCVD nitride when lower temperature ranges are required. Micro-mechanicalWidely used in Micro-Electro-Mechanical Systems (MEMS) and semiconductor processing, PECVD nitride is a tensile stress film that can be used as a passivation layer or to help balance film stress within a stack. PECVD nitride reduces overall film stress. This prevents delaminating and micro-cracking.

Low Stress PECVD Niride thicker films service is also availble.

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PECVD NITRIDE SPECIFICATIONS

  • Thickness range: 100Å – 2µm
  • Thickness tolerance: +/-7%
  • Within wafer uniformity: +/-7% or better
  • Wafer to wafer uniformity: +/-7% or better
  • Sides processed: One
  • Refractive index: 1.98+/-.05
  • Film stress: <200MPa(Low Stress), +400MPa (Standard)
  • Wafer size: 50mm, 100mm, 125mm, 150mm, 200mm, 300mm
  • Wafer thickness: 100µm – 2,000µm
  • Wafer material: Silicon, Silicon on Insulator, Quartz
  • Temperature: 300C° – 400C°
  • Gases: Silane, Ammonia, Nitrogen
  • Equipment: PlasmaTherm batch PECVD deposition tool

PECVD Deposition

Standard Oxide
Slow deposition Oxide
OxyNitride with custom refractive index
Standard Nitride
Low Stress Nitride

PECVD Nitride On Silicon Wafers

1 is a flow chart illustrating the process of deposition of a silicon nitride film on a wafer using conventional PECVD batch devices. The process (Figure 2) begins with the application of 500 layers of silicon dioxide (SiO2) using plasma - an improved chemical vapour deposition. To measure the deposition rate, we load 4-inch silicon wafers and calculate the average of the five points on each wafer. [Sources: 6, 10, 12]

Output watts per kilowatt hour (kW / m2) for silicon nitride deposition on silicon wafers (Figure 2). Power watts per watt for SiO2 deposition in a conventional PECVD batch device (Fig. 2) and the average of the five points on each wafer. [Sources: 0]

CM resistance of boron - doped silicon nitride on silicon wafers after annealing at 425 degrees Celsius, as shown in Figure 2 and Figure 3 respectively (Figure 4). [Sources: 8, 11]

This is a very useful and important observation, which indicates that the P7 process parameters must be selected for further investigation of SiN films, especially when they are intended for use in optical applications. The discussion about silicon nitride deposition and the importance of controlling stress binding and other properties is also valid in general here. A conventional method of controlling the resistance of silicon nitride films, which are deposited by chemical vapor deposition, is to adjust the frequency and power of the electrode spacing. [Sources: 0, 7]

The silicon nitride deposition time is automatically adjusted to maintain the thickness of the silicon nitride film during the initial wafer batch process, which takes place after the first RF plasma cleaning process. While the wafers are being processed, it is automatically adjusted to be longer after each wave series. This is done with two separate modules, which are often connected to each other, as shown in FIG. SiN coatings and tin nitrides in the PECVD process [Sources: 2, 6]

As already indicated, the resulting low throughput is due to the absence of a previous nitride-based gas chemistry process in the prior art and the result of its limited application. However, one beneficial effect is that increasing the total layer thickness provides a possibility for hydrogen to diffuse through the silicon-silicon oxide interface, thereby reducing the number of recombinatively active interface traps. It is not necessary to use a Si passivation layer as this results in lower throughput. [Sources: 0, 8]

It was assumed that high cooling rates could suppress the hydrogen pouring into the silicon mass, where hydrogen is released through the hydrogenated passivation layer. This suggests that a higher cooling rate can also suppress the hydrogen pouring from the silicon mass to the surface of the wafer, where it can be released as hydrogen. It is suggested that the high cooling rate could also suppress the hydrogen effect from the silicon bulk, where the H2O-2 hydrogen - which releases hydrogen - flows through the silicon-oxide interface. [Sources: 9]

Sin oxidation depending on the temperature of the annealing can be explained by assuming that the oxidative species diffuses to the interface of sin-oxide, where it reacts with silicon nitride. [Sources: 11]

Finally, the H atom of sih3 reaches the other W atom and it decomposes to form the W-H bond. NiCr is a better catalyst than pure Ni because there is no bond between afc - o and cf2, making it more resistant to oxidation of silicon nitride. [Sources: 1]

It is assumed that Si 2 O 2 N exists as a thin film in the form of a silicon oxide, but not as a silicon nitride oxide. Low stress PECVD nitride offers great flexibility as it can be deposited at low temperatures and, as it is deposited in thermal oxides, it offers greater flexibility and heat oxides. As P ECVD is deposited as oxides, it offers great flexibility and can also deposit other thin layers. As it is deposited at low temperatures, PecVDNitride can also be deposited at lower temperatures and offers greater flexibility. [Sources: 3, 11]

This makes it possible to process many side by side wafers with gas flow without major problems. [Sources: 4]

With clean FRP silicon, this could be an ideal solution to the problem of high temperatures and pressure. Tensions between the deposited layers arise from stacking errors in the crystal structure, needle holes and other factors. [Sources: 4, 5]

Furthermore, it is possible that the majority of the Fe-quantity is not present in interstitial form and therefore can be detected in the QSSPC lifetime measurements without recognizing the total Fe concentration. Furthermore, it is also possible that we were not informed about the "mass" Fe and therefore cannot be recognized by SIMS, as it was not recognized by the simulations. [Sources: 5]

The amount of Fe in the annealed SiN can be determined by measuring the Fe atoms per cm, which is given by the number of atoms in a single Fe atom (cm2) and the total Fe concentration. When using SIMS, the discrepancy between Fe concentrations is considered to be within an acceptable range of uncertainty. In view of this fact due to the sinuses, we considered them to be within the acceptable range of uncertainty (Fig. 1). [Sources: 5]

 

 

Sources:

[0]: https://patents.google.com/patent/US5773100A/en

[1]: http://www.jaist.ac.jp/ms/labs/handoutai/matsumura-lab/matsumura/english/catcvd.html

[2]: https://www.google.com/patents/US6274496

[3]: https://www.universitywafer.com/silicon-nitride.html

[4]: https://www.crystec.com/kllnitre.htm

[5]: https://aip.scitation.org/doi/10.1063/1.4967914

[6]: https://www.google.nl/patents/US7666480

[7]: https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5453107/

[8]: https://www.hindawi.com/journals/aoe/2008/485467/

[9]: https://worldwidescience.org/topicpages/p/pecvd+silicon+nitride.html

[10]: https://www.nature.com/articles/s41598-017-14122-4

[11]: https://content.sciendo.com/view/journals/msp/34/2/article-p315.xml?language=en

[12]: http://www.semiconductor-today.com/news_items/2016/jul/smart_260716.shtml