PECVD Nitride on Silicon Wafers

University Wafer Silicon Wafers and Semicondcutor Substrates Services
University Silicon Wafer for Production

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  • Thickness range: 100Å – 2µm
  • Thickness tolerance: +/-7%
  • Within wafer uniformity: +/-7% or better
  • Wafer to wafer uniformity: +/-7% or better
  • Sides processed: One
  • Refractive index: 1.98+/-.05
  • Film stress: <200MPa(Low Stress), +400MPa (Standard)
  • Wafer size: 50mm, 100mm, 125mm, 150mm, 200mm, 300mm
  • Wafer thickness: 100µm – 2,000µm
  • Wafer material: Silicon, Silicon on Insulator, Quartz
  • Temperature: 300C° – 400C°
  • Gases: Silane, Ammonia, Nitrogen
  • Equipment: PlasmaTherm batch PECVD deposition tool

PECVD Nitride

PECVD nitride is an alternative to LPCVD nitride when lower temperature ranges are required. Micro-mechanicalWidely used in Micro-Electro-Mechanical Systems (MEMS) and semiconductor processing, PECVD nitride is a tensile stress film that can be used as a passivation layer or to help balance film stress within a stack. PECVD nitride reduces overall film stress. This prevents delaminating and micro-cracking.

Low Stress PECVD Niride thicker films service is also availble.

PECVD Deposition

Standard Oxide
Slow deposition Oxide
OxyNitride with custom refractive index
Standard Nitride
Low Stress Nitride