Thin Film Coated Wafers for Research and Production

University Wafer Silicon Wafers and Semicondcutor Substrates Services
University Silicon Wafer for Production

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Vacuum Deposition Experts

UniversityWafer, Inc. and our partners provide custom sputtering and e-gun evaporation services:


We Provide R&D and Production

We help researchers in all there research, development and production needs in both academia and industry. Below are just some industries that we cater to.

  • Biomedical, biotechnology
  • Ultrasound
  • DNA sequencing
  • Medical devices and implants
  • Diagnostics and therapeutics
  • MEMS, instrumentation, sensors, microelectronics, displays
  • Energy storage and conversion
  • Solar, optical
  • Aerospace
  • Government labs, universities

Substrates We Can Supply or You Can Supply!

  • Customer-furnished substrates that we have coated:
  • Silicon
  • Compound semiconductors
  • Glass, including fused silica, borosilicate, and soda-lime
    Ceramics, including alumina and aluminum nitride
  • Sapphire
  • Plastics and polymers, including foils
  • Metal foils and plates
  • PZT
  • Wafers patterned with lift-off photoresist
  • Wafers with cantilevers and deep-etched topographies

How to Deposit Carbon on Silicon?

A research client asked us the following:  

I am looking for wafers coated with a carbon thin film. I am interested in both amorphous or glassy carbon about 1-2 microns thick. Do you know if anything like that exists?

I was thinking of a 4" Si wafer. Ideally the carbon layer would be be on SOI with the oxide and Si ~2microns thick. The carbon on 2-3 microns SiO2 would be good too. The carbon should be low stress. I am guessing I would need to purchase the SOI wafer and then grow my own carbon, but I wanted to see if by chance something similar like that already exists.

UniversityWafer replied:

Our historically maximum sputtered C thickness is 3,080Å.
If we push our sputtering process, we anticipate a maximum thickness of 8,000Å.

We do not know if it is amorphous or glassy.

We do know that n = 1.25 and k = 0.50 @ 632.8nm. This means that our sputtered C is a mixture of diamond and graphite.

Researcher:

Thank you for your response, this is interesting information. What is the reason for the upper limit? The nature of carbon films seems very variant, DLC, glassy, amorphous....mixture of Sp3/sp2.... I am interested in an electrically conducting film, best not shiny, so a mixture of diamond and graphite is ok, not too much diamond, which is typically not a problem! How much would 4" SOI wafer cost with the carbon sputtered on them? I cn chose the SOI wafer from your list, but could you let me know what the additional cost of the carbon would be and wha the minimum wafer count is? Also, do you know what the surface stresses are?

UniversityWafer, Inc.

Thank you for your response, this is interesting information. What is the reason for the upper limit? In this case the upper limit is set by a full day (8 hours) of deposition time. We are unable to run any deposition longer than 8 hours.

The nature of carbon films seems very variant, DLC, glassy, amorphous....mixture of Sp3/sp2.... Yes, we do not have a characterized C film, except for the n and k values reported earlier.

I am interested in an electrically conducting film, best not shiny, so a mixture of diamond and graphite is ok, not too much diamond, which is typically not a problem! The film is weakly conducting. The sheet resistance is high, outside of the range of our 4-point probe.

How much would 4" SOI wafer cost with the carbon sputtered on them? I cn chose the SOI wafer from your list, but could you let me know what the additional cost of the carbon would be and wha the minimum wafer count is? Our lot charge for in-situ sputter etch followed by sputter deposition of 8,000Å C is $3,300. Lot size = up to 12 wafers, 100mm dia. This job is considered as Experimental Work, to be done on a best efforts basis. Please refer to paragraph 8 in the attached Terms and Conditions of Sale.

Also, do you know what the surface stresses are? We have no data on film stress at this time. But we hope to have some data within the next few days.

New data as of today: Stress of sputtered C film (100nm thick): 913 MPa (compressive).

Evaporated and Sputtered Thin Film on Substrates

UniversityWafer, Inc. and partners, are experts in assiting researchers with their vacuum deposition needs. We can provide all diameters with a large selection of coatings below. Small quantities are no problem.

UniversityWafer, Inc. and our partners can help your research with our advanced vacuum thin film deposition services on our substrates or on you-the researcher. We can sputter or evaporate on almost any substrate of any diameter. Small quantity orders are no problem.
Our clean rooms house 5 sputtering systems with load locks and an e-gun evaporation system with a 4-pocket hearth.

We Sputter Coat on our Perkin/Elmer 4410 and MRC 903 sputtering machines. 
Our Electron beam evaporations are handled in our modified CHA vacuum systems-which are  cryopumped and housed in a Class 1000 clean room.
We also specialize on surface acoustic wave (SAW) device fabrication on piezoelectric materials including quartz or Lithium Niobite (LiNbO3).

Please let us know what we can quote for you today.

Sputtered Films Inventory

Metals Sputtered Films
Conductive metals Al, Au, Ag, Cu
Aluminum alloys Al-1%Si, Al-.5%Si, Al-1%Cu
Al-1%Cu-1%Si Al-1%Cu-.5%Si
Adhesion metals Cr, Ti, Ti-90%W
Refractory metals Mo, Nb, Ta, W, Hf
Platinum group metals Pt
Magnetic metals Ni, Fe, Co, Co-20%Cr
Non-magnetic alloys Ni-20%Cr, Ni-7%V
Other alloys Ti-50%Ni, CoCrAlY
Semiconductors Si, Ge
Nitrides (reactively sputtered) SiN, TiN, TaN, TaSi2N, Ta5Si3N, BN
Oxides SiO2, Al2O3, TiO2, CrSiO, AZO, GlTO, YSZ, Borosilicate
TCO ITO
Carbon, Carbide C, SiC
Silicides TaSi2, Ta5Si3
Chalcogenide Ge2Sb2Te5

Evaporated Films

What We Can Do Evaporated Films
Conductive metals Al, Au, Ag, Cu
Adhesion metals Cr, Ti
Refractory metals Mo, W
Platinum group metals Pt, Pd, Ir, Ru
Magnetic metals Ni, Fe, Co
Non-Magnetic alloy Ni-20%Cr
Soft metals In, Sn
Semiconductors Si, Ge
Oxides SiO2, Al2O3, TiO2, HfO2
Ta2O5, Y2O3, In2O3, SnO2
Ga2O3, SiO, MgO, CeO2
TCO ITO
Fluorides CaF2, MgF2, BaF2, LaF3, YF3

Electrochemical Impedance Spectroscopy

Silicon wafers used in a study on soluble amyloid B-Oligomers and their affect on dielectric membrane properties.

We have gold-coated silicon wafers that researchers have used as electrodes for EIS measurements in six distinct electrochemical cells.

Cross Compare Ellipsometry Data

Clients have used the following cobalt coated substrates to cross compare their ellipsometry data.

100mm P(100) 1-10 ohm-cm SSP 500um Prime Grade with Cobalt (Co) thin film thicknesses.

500nm
50nm
5nm

Single Crystal Diamond Films on Silicon Wafers

Researchers have requested the follownig spec: 100mm diameter, high purity single crystal CVD epi on Si(100) or Si(111), 2 thicknesses, 0.25 and 0.5 micron. I would be cleaving off 1 cmx1cm samples for my studies, the wafer diameter could be anything, 2 or 3" ok too.

UniversityWafer Quoted The Following Item #254520

See below for the offer on DLC on Silicon, including cleaving off 1cm x 1cm pieces,and we can using Si(111) for Dimond films deposition,so as to be best for etching process

1. thin single crystal diamond films on Si substrates,4" diameter, high purity single crystal CVD epi on Si(100) or Si(111), dimond film thicknesses, 0.25 micron,qty. 2,cleaving off 1 cmx1cm

Email for Pricing /ea; 2~3 weeks delivery

2. thin single crystal diamond films on Si substrates,4" diameter, high purity single crystal CVD epi on Si(100) or Si(111), dimond film thicknesses, 0.50 micron,qty. 2,cleaving off 1 cmx1cm

Email for Pricing /ea; 2~3 weeks delivery

3. <111> SI orientation would best be one that can be etched with pyramidal shaped holes ending in a very small square opening ( 5 microns) at the diamond surface.

Fill out the form ror Pricing.