Let us know what thickness oxide layer on silicon wafers you need for an immediate quote.
We have Wet and Dry oxide from a few ansgrstoms thick up to 20 micron thick.
We can deposit Nitride, or metals onto the oxide layer in small quantities and large.
Researchers have used the followng test grade silicon to float films and tranfer to another substrate.
Our research group is currently working on photonic devices. So we would be needing a quote for 15 microns thick SiO2 with 100 nm and 300 nm SiN on top if possible. Please let me know the quote for any wafers above 6 inch for both 100 nm and 300 nm SiN on 15 microns thick SiO2.
UniversityWafer, Inc. Quoted:
A scientist purchased the following items for their 2D Materials research.
Thermal Oxide 100mm
Thermal Oxide 100mm
Due to the progressive miniaturization of silicon chips, the importance of characterizing the atomic structure of the silicon-silicon dioxide interface, an essential component of integrated circuits, is growing expotentially. Clients often ask if the SiO2 layer is amourphous?
Yes, SiO2 layer is amorphous. The wafer specs in question is:
Oxide Si Item #2726
50.8mm P/B <100> 0-100 ohm-cm 325um SSP Test Grade w/ 100nm Wet Thermal oxide
The following thermal oxide coated silicon wafers are used by researchers for exfoliating graphene and other two dimensional materials. Because of the particular oxide thickness, the monolayers of these materials will be visible. Researchers study the optical and electrical properties
of these monolayers.
Thermal Oxide Item #3329
100mm P/B (100) 0.001-0.005 ohm-cm 500um SSP Prim Grade with 285nm of Thermal Oxide
Below you'll find some of the Thermal Oxide Coated Silicon Wafers in stock at our online store. Buy online and save!
Please send us your specs for an immediate quote!
Researchers from the Universities of Tennessee and Arizona used our silicon wafers with a 100nm oxide layer to conduct an in depth analysis on how the migration and activation of microphages can be used to remove a foreign object from the surface of a substrate.Methods: Silicon wafers with a 100 nm oxide layer were purchased from University Wafer. Lissamine (DHPE) was purchased from Invitrogen. BSPC synthesis was conducted as referenced4. Potassium persulfate and sodium bisulfite (Fisher) were utilized as redox initiators for polymerization. The silicon wafers were cleaned with acetone, ethanol, and water before being treated with piranha solution directly prior to use. Lipid vesicles composed of 1.5 mol% Lissamine DHPE and 98.5 mol% BSPC were prepared as referenced4 and deposited on the cleaned wafers. The bilayer was polymerized by either UV exposure or redox initiation. A bare wafer and a wafer with deposited lipids that were left unpolymerized and dried were used as negative controls. Ellipsometry, contact angle, and fluorescent microscopy were utilized to further characterize the dried bilayers. RAW 264.7 macrophages were cultured on tissue culture plastic and passed at 70-80% confluency. Macrophages were seeded at a density of 100,000 cells/cm2. The cells were cultured for 24 hours and then a live/dead staining kit (Invitrogen) was applied to fluorescently analyze the vitality of the cells. ImageJTM, provided by NIH, was utilized to analyze
Below is the color of silicon wafer surface with various oxide thicknesses.
All diamaters from 25.4mm, 50.8mm, 76.2mm, 100mm, 125mm, 150mm, 200mm and 300mm.
Thickness range: 500Å – 15µm
Thickness tolerance: Target +/-5%
Within wafer uniformity: +/-3% or better
Wafer to wafer uniformity: >+/-5% or better
Sides processed: Both
Refractive index: 1.456
Film stress: -320MPa (Compressive)
Wafer size: 50mm, 100mm, 125mm, 150mm, 200mm
Wafer thickness: 100µm – 2,000µm
Wafer material: Silicon, Silicon on Insulator, Quartz
Temperature: 950C° – 1050C°
Equipment: Horizontal Furnace
Our Ultra-Pure Wet Thermal Oxidation process is designed to insure that you receive the highest quality films. Prior to thermal oxidation
all wafers will receive a pre-furnace clean.
Our ultra-pure Dry Oxidation process is available for those applications requireing thinner oxides, and is designed to ensure that you
receive the highest quality film.
Our Dry Chlorinated Thermal Oxidation is recommended for use in MOS and other active device fabrication processes. Using
Dry Cholorinated Thermal Oxide can help your devices to perform to its highest potential by eliminating metal ions.
Clients have used the following silicon thermal oxide spec for graphene photodetecors. This graphene on Si substrate will be used as a photodetector.
Reference #253524 for a quote.
Researchers have used dry thermal oxide to study the surface properties of silicon substrates. The following dry thermal oxide item has recently been used.
Dry Oxide on Si Item #3219
76.2mm P/B<100> 5-10 ohm-cm 380um SSP Prime w/ 100A Dry Thermal Oxide
Email us #ONL28367 for more info.