SiO2 Wafers - Thermal Oxide Silicon Wafers Wet & Dry

University Wafer Silicon Wafers and Semicondcutor Substrates Services
University Silicon Wafer for Production

Wet and Dry Thermal Oxide

Let us know what thickness oxide layer on silicon wafers you need for an immediate quote.

We have Wet and Dry oxide from a few ansgrstoms thick up to 20 micron thick.

We can deposit Nitride, or metals onto the oxide layer in small quantities and large.

FAST QUOTE for your Thermal Oxide Needs!


Thermal Oxide Wafers for Spin Coating

Researchers have used the followng test grade silicon to float films and tranfer to another substrate.

Si Item #452 - 100mm P(100) 0-100 ohm-cm SSP 500um with 30nm of Dry Thermal Oxide

"We want to deposit film via spin coating, etch the oxide to float the films and transfer them onto another substrate. Can we use the Si wafers we bought lately with native oxides? My understanding is we need a certain thickness of SiO2. Thanks."

Wafers to Fabricate Optical Resonators

Researchers have used 100mm P(100) 1-10 ohm-cm SSP 500um with 2 micron of dry thermal oxide to fabcricate optical resonators

Thick Thermal Oxide for Photonic Devices

Our research group is currently working on photonic devices. So we would be needing a quote for 15 microns thick SiO2 with 100 nm and 300 nm SiN on top if possible. Please let me know the quote for any wafers above 6 inch for both 100 nm and 300 nm SiN on 15 microns thick SiO2.

UniversityWafer, Inc. Quoted:

  1. 6‘’ Silicon wafer,P or N-type,<100> or <111> orientation,resis. <100 Ohm.cm,thickness 675+/-25um,SSP,both sides with 15 microns thick SiO2 and with 100 nm SiN on top of both oxide layer,qty. 25pcs
  2. 6‘’ Silicon wafer,P or N-type,<100> or <111> orientation,resis. <100 Ohm.cm,thickness 675+/-25um,SSP,both sides with 15 microns thick SiO2 and with 300 nm SiN on top of both oxide layer,qty. 25pcs
  3. 3-1. 6‘’ Silicon wafer,P or N-type,<100> or <111> orientation,resis. <100 Ohm.cm,thickness 675+/-25um,SSP,both sides with 15 microns thick SiO2 and with 100 nm SiN on top of both oxide layer,qty. 12pcs
  4. 3-2. 6‘’ Silicon wafer,P or N-type,<100> or <111> orientation,resis. <100 Ohm.cm,thickness 675+/-25um,SSP,both sides with 15 microns thick SiO2 and with 300 nm SiN on top of both oxide layer,qty. 13pcs
    total 25pcs for above items

Thermal Oxide Wafers to Mechanical Exfoliate 2D Materials

A scientist purchased the following items for their 2D Materials research.

Item #2893
Thermal Oxide 100mm

3329
Thermal Oxide 100mm

Large Selection of Thermal Oxide (SiO2) on Silicon Wafers in stock 25.4mm, 76.2mm, 100mm, 125mm, 150mm, 200mm and 300mm

Below you'll find some of the Thermal Oxide Coated Silicon Wafers in stock at our online store. Buy online and save!

Thermal Oxide Silicon Wafers

UniversityWafer Thermal Oxide Used in Research for  Ultrafast XUV Spectroscopy Surface Sensitivity

Researchers from The Ohio State University have been using our thermal oxide (100) wafers and also used fluorine doped tin oxide FTO glass.

Please send us your specs for an immediate quote!

UniversityWafer Silicon Wafers Helped with an Analysis on Macrophage Activation and Lipid Bilayers

Researchers from the Universities of Tennessee and Arizona used our  silicon wafers with a 100nm oxide layer to conduct an in depth analysis on how the migration and activation of microphages can be used to remove a foreign object from the surface of a substrate.

Methods: Silicon wafers with a 100 nm oxide layer were purchased from University Wafer. Lissamine (DHPE) was purchased from Invitrogen. BSPC synthesis was conducted as referenced4. Potassium persulfate and sodium bisulfite (Fisher) were utilized as redox initiators for polymerization. The silicon wafers were cleaned with acetone, ethanol, and water before being treated with piranha solution directly prior to use. Lipid vesicles composed of 1.5 mol% Lissamine DHPE and 98.5 mol% BSPC were prepared as referenced4 and deposited on the cleaned wafers. The bilayer was polymerized by either UV exposure or redox initiation. A bare wafer and a wafer with deposited lipids that were left unpolymerized and dried were used as negative controls. Ellipsometry, contact angle, and fluorescent microscopy were utilized to further characterize the dried bilayers. RAW 264.7 macrophages were cultured on tissue culture plastic and passed at 70-80% confluency. Macrophages were seeded at a density of 100,000 cells/cm2. The cells were cultured for 24 hours and then a live/dead staining kit (Invitrogen) was applied to fluorescently analyze the vitality of the cells. ImageJTM, provided by NIH, was utilized to analyze

Research Publication

 

The Purpose of Growing Thermal Oxide Onto Silicon

  • Gate oxide
  • Masking material during doping
  • To provide protection for the conductors
  • To Isolate devices from each other
  • A dielectric for a capacitor

How is Thermal Oxide Applied to Silicon Wafers?

  • Grown Dry Oxidation - By default dry oxide is grown on just one side of the wafer. Perect for very thin oxide layers
  • Wet Oxidation Grown - Wave guides technology and Silicon on Insulator wafers (SOI) can benefit greatly from our thick Thermal Oxide layers. We provide thermal oxide up to 15um in thicknessGrown on both sides of the wafers by default.
  • Deposited CVD - When you cannot oxidize Silicon, then you can use Chemical Vapor Deposition to deposit the oxide on top of your substrate.

What are the Factors Effecting Oxide Growth?Thermal Oxide Deposition Furnace

 

Let us know which Thermal Oxide Term used to find us and we'll discount your order!


  • thermal oxide
  • thermal oxide calculator
  • thermal oxide thickness
  • thermal oxide wafer
  • thermal oxide properties
  • thermal oxide growth
  • thermal oxide furnace
  • thermal oxide dielectric constant
  • thermal oxide growth calculator
  • silicon wafer thermal oxide
  • thermal oxide wafer
  • thermal oxide si wafer
  • thermal oxidation of silicon
  • thermal oxidation of silicon wafer
  • thermal oxidation calculator
  • thermal oxidation unit
  • Wet Oxidation
  • Dry Oxidation
  • Chemical Vapor Deposition (CVD ) Oxide

Other specs thermal oxide thickness available. Please ask!

 

All diamaters from 25.4mm, 50.8mm, 76.2mm, 100mm, 125mm, 150mm, 200mm and 300mm.



50.8mm P/B (100)1-10 ohm-cm 280um SSP $7.90 each
With 300nm of Oxide $16.90 each
with 100nm of LPCVD Nitride $31.90 each

100mm N/Ph (100) 1-10 ohm-cm 500um SSP $12.90 each
with 300nm of oxide $20.90 each
with 100nm of LPCVD Nitride $36.90 each

100mm N/As (100) 0.001-0.005 ohm-cm 500um SSP $14.90 each
with 300nm of oxide $22.90 each
with 100nm of LPCVD Nitride $38.90 each

100mm P/B (100) 1-10 ohm-cm 500um SSP $12.50 each
with 300nm of oxide $20.50 each
with 100nm of LPCVD Nitride $36.90 each

100mm P/B (100) 0.001-0.005 ohm-cm 500um SSP $13.90 each
with 300nm of oxide $21.90 each
with 100nm of LPCVD Nitride $37.90 each

100mm P/B (100) 1-20 ohm-cm 1,00um SSP $15.90 each
with 300nm of oxide $23.90 each
with 100nm of LPCVD Nitride $39.90 each

100mm P/B (100) 0.01-0.02 ohm-cm 525um SSP $13.90 each
with 300nm of oxide $21.90 each
with 100nm of LPCVD Nitride $39.90 each

THERMAL OXIDE SPECIFICATIONS

 

Thickness range: 500Å – 15µm
Thickness tolerance: Target +/-5%
Within wafer uniformity: +/-3% or better
Wafer to wafer uniformity: >+/-5% or better
Sides processed: Both
Refractive index: 1.456
Film stress: -320MPa (Compressive)
Wafer size: 50mm, 100mm, 125mm, 150mm, 200mm
Wafer thickness: 100µm – 2,000µm
Wafer material: Silicon, Silicon on Insulator, Quartz
Temperature: 950C° – 1050C°
Gases: Steam
Equipment: Horizontal Furnace

 

Wet Oxide on Silicon

Our Ultra-Pure Wet Thermal Oxidation process is designed to insure that you receive the highest quality films. Prior to thermal oxidation
all wafers will receive a pre-furnace clean.

 

Dry Oxide on Silicon

Our ultra-pure Dry Oxidation process is available for those applications requireing thinner oxides, and is designed to ensure that you
receive the highest quality film.

 

Dry Chlorinated Thermal Oxidation


Our Dry Chlorinated Thermal Oxidation is recommended for use in MOS and other active device fabrication processes. Using
Dry Cholorinated Thermal Oxide can help your devices to perform to its highest potential by eliminating metal ions.

 

Photodecector Made Using Dry Chlorinated Thermal Oxide and Forming Gas Anneal

Clients have used the following silicon thermal oxide spec for graphene photodetecors. This graphene on Si substrate will be used as a photodetector.

 

Silicon 100mm N/As (100) 0.001-0.005 ohm-cm SSP 500um with 2,850 angstroms Dry Chlorinated Thermal Oxide and forming gas anneal.

 

Reference #253524 for a quote.

 

Wafers Used to Research Surface Property of Silicon

Researchers have used dry thermal oxide to study the surface properties of silicon substrates. The following dry thermal oxide item has recently been used.

Dry Oxide on Si Item #3219
76.2mm P/B<100> 5-10 ohm-cm 380um SSP Prime w/ 100A Dry Thermal Oxide

Email us #ONL28367 for more info.