Wet Oxidation vs Dry oxidation

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Wet thermal oxide vs dry thermal oxide

By default Wet Thermal Oxidation is grown on both sides of the wafer. Wet oxide is used when a thicker oxide layer is required.
The quality of the thicker oxide should be the same as Dry Thermal Oxidiation.

We provide wet thermal oxide thicknesses up to 20um. Thicker oxide layers is great for Silicon on Insulator (SO) wave guides technoology.

Thick Thermal Oxide is also widely used in the Chemical Mechanical Polishing (CMP) industry. Our 4um -6um Thermal Oxide on silicon wafers has been perfected as a consumable for breaking in CMP tools and polishing pads. These Silicon wafers can be reclaimed after use by stripping and re-growing the Thermal Oxide layer providing maximum material utilization.

Fast leadtimes and small quantities is what we specialize in, but larger volumes are no problem!

Unlike wet thermal oxide, dry thermal oxide can be grown on just one side of the wafer. The oxide is optimized for wafers requiring minimal thermal processing. Dry thermal oxide s often used during the semiconductor manufacturing process to form intra-metal dielectric stacks. Dry oxide is also used in MEMS and surface micro-machining processes. Our PECVD oxide films offer you greater process flexibility and can be combined with many of our other films including PECVD nitride, LPCVD nitride, and PVD metals.