Thermal Oxide Growth Calculator

Thermal Oxide Growth Calculator

Use this thermal oxide growth calculator to estimate the time required to grow silicon dioxide (SiO₂) on a silicon wafer based on your specified oxide thickness and growth rate. This tool is ideal for semiconductor process planning, furnace scheduling, and research development applications.

Thermal oxide layers are commonly grown using wet oxidation or dry oxidation processes at elevated temperatures. By entering your target oxide thickness and known growth rate, you can quickly determine the approximate oxidation time required for your process.

Calculator Inputs

• Oxide Thickness (µm) – Desired final SiO₂ thickness.
• Growth Rate (µm/hour) – Measured or recipe-based oxidation rate.

This calculator provides a fast estimation for process setup. For wafers with pre-grown oxide layers, see our Thermal Oxide Silicon Wafers.

Enter the desired thickness of the thermal oxide layer in micrometers:

Enter the growth rate of the thermal oxide in micrometers per hour:

Result:

How Thermal Oxide Growth Works

Thermal oxide is formed when a silicon wafer is exposed to oxygen or steam at elevated temperatures, typically between 800°C and 1200°C. Oxygen molecules react with the silicon surface to form silicon dioxide (SiO<