Chemical Vapor Deposition (CVD)

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Chemical Vapor Deposition Advantages:

  • Growth using Lower Temperatures
  • Speed of oxide growth rate (especially APCVD).
  • Substrates other than silicon can be used.
  • Good step coverage (specifically PECVD).

Chemical Vapor Deposition (CVD) for Thermal Oxide Growth

When you need to grow thermal oxide on silicon thin and fast you use chemical Vapor Deposition.

Tradition wet thermal oxide is grown onto the wafer. The wafer's surface has to be pristine. The CVD method deposits the oxide onto the wafer's surface instead of growing it.

Thus a lower quality subsrate can be use with a much thinner oxide layer than can be grown.