Germanium (Ge) Substrates for Research & Production

Germanium (Ge) Substrates

We have both electrical grade and optical grade germanium wafers in stock. Sizes range from < 10mm square to 150mm.

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Usefull Germanium Substrate Specs Vs Silicon and Other Materials

Germanium is a high-mobility material that competes with Silicon (Si), Gallium Arsenide (GaAs), and Indium Arsenide (InAs) for making CMOS devices.

Germanium Bandgap

0.66

Germanium Electron mobility at 300 kelvins

3,900

Germanium Hole mobility at 300 K

1,900

Germanium Maximum Possible Electron Velocity

0.6

Germanium Critical Electric Field

0.1

 

Germanium Substrates in Stock

Below are just some of the germanium wafers that we have in stock. If you don't see what you need please email use your spec for pricing and delivery.

Item	Dia (mm)	Typ/Dop	Ori	Res ohm-cm	Thk (μm)	Pol
2477	50.8	N/Sb	(100)	0.01-0.02	500	SSP
2478	50.8	Undoped	(100)	>50	500	SSP
2479	50.8	Undoped	(100)	>50	500	DSP
2480	50.8	N/Sb	(110)	0.35-0.4	500	SSP
2481	50.8	Undoped	(111)	>50	500	SSP
2482	50.8	P/Ga	(100)	1-10	500	SSP
2575	50.8	P/B	(100)	0.01-0.1	500	SSP
1927	100mm	P/Ga	<100> 6° towards <111> ± 0.5°	0.01-0.05	175	SSP
1928	150mm	P/Ga	<100> 6° towards <111> ± 0.5° Epi ready	0.008-0.05	225	SSP

What is The Thermal Conductivity of Germanium vs Other Substrates?

0.58

Below is the comparison between Germanium and competing materials.

To make germanium—or any alternative channel material—work in

Property	Silicon (Si)	Germanium (Ge)	Gallium arsenide (GaAs)	Indium arsenide (InAs)	Unit
Bandgap	1.12	0.66	1.42	0.35	eV
Electron mobility at 300 kelvins	1,350	3,900	8,500	40,000	cm2/(V·s)
Hole mobility at 300 K	450	1,900	400	500	cm2/(V·s)
Maximum possible electron velocity	1	0.6	2	3.5	x107 cm/s
Critical electric field	0.25	0.1	0.004	0.002	x106 V/cm
Thermal conductivity	1.5	0.58	0.5	0.27	W/(cm·K)