Wet and Dry Thermal Oxide (SiO2) in Stock
From 25.4mm - 300mm
200Angstroms to 15um oxide.
Buy as few as 1 wafer-here!
Thermal Oxide or Silicon Dioxide (SiO2) is the insulating layer commonly used in semiconductors. We grow our insulating oxide layer using Wet and Dry Oxide methods.
Wet Oxide is the less expensive than the dry oxide option. By default it is grown on both sides of the wafer. Clients who need the wet oxide on just one side of the wafer can request us to back-grind oxide off one side of the wafer. This is usually the etched side.
Dry Oxide is more expensive than wet but you can grow the oxide on just one side of the wafer. This reduces yield issues with back-grinding the wet oxide off one side of the wafer.
Our Wet Thermal Oxidation process was designed for growing thicker oxide layers while maintaining the same level of quality you would expect from Dry Thermal Oxidation. We specialize in growing thermal oxide for applications that require above standard film thickness. Wave guides technology and Silicon on Insulator wafers (SOI) can benefit greatly from our thick Thermal Oxide layers. We provide thermal oxide up to 15um in thickness.
Thick Thermal Oxide is also widely used in the Chemical Mechanical Polishing (CMP) industry. Our 4um -6um Thermal Oxide on silicon wafers has been perfected as a consumable for breaking in CMP tools and polishing pads. These Silicon wafers can be reclaimed after use by stripping and re-growing the Thermal Oxide layer providing maximum material utilization.
SPECIFICATIONS
Thickness range: 500Å – 15µm
Thickness tolerance: Target +/-5%
Within wafer uniformity: +/-3% or better
Wafer to wafer uniformity: >+/-5% or better
Sides processed: Both
Refractive index: 1.456
Film stress: -320MPa (Compressive)
Wafer size: 50mm, 100mm, 125mm, 150mm, 200mm
Wafer thickness: 100µm – 2,000µm
Wafer material: Silicon, Silicon on Insulator, Quartz
Temperature: 950C° – 1050C°
Gases: Steam
Equipment: Horizontal Furnace
Our ultra pure dry oxidation process is available for those applications requiring thinner oxides and is designed to ensure that you receive the highest quality film. Check out our standard dry thermal oxidation parameters on the right.
We also offer the opportunity to customize our standard process to meet your needs. In many cases the temperature, ramp rates, and gas flows can be modified to achieve the result you are looking for.
Other specs oxide/nitride thickness available. Please ask! 50.8mm P/B (100)1-10 ohm-cm 280um SSP $7.90 each With 300nm of Oxide $16.90 each with 100nm of LPCVD Nitride $31.90 each 100mm N/Ph (100) 1-10 ohm-cm 500um SSP $12.90 each with 300nm of oxide $20.90 each with 100nm of LPCVD Nitride $36.90 each 100mm N/As (100) 0.001-0.005 ohm-cm 500um SSP $14.90 each with 300nm of oxide $22.90 each with 100nm of LPCVD Nitride $38.90 each 100mm P/B (100) 1-10 ohm-cm 500um SSP $12.50 each with 300nm of oxide $20.50 each with 100nm of LPCVD Nitride $36.90 each 100mm P/B (100) 0.001-0.005 ohm-cm 500um SSP $13.90 each with 300nm of oxide $21.90 each with 100nm of LPCVD Nitride $37.90 each 100mm P/B (100) 1-20 ohm-cm 1,00um SSP $15.90 each with 300nm of oxide $23.90 each with 100nm of LPCVD Nitride $39.90 each 100mm P/B (100) 0.01-0.02 ohm-cm 525um SSP $13.90 each with 300nm of oxide $21.90 each with 100nm of LPCVD Nitride $39.90 each
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