The Blue Laser Diode : GaN Based Light Emitters and Lasers

Gallium Nitride Wafers and Aluminum Nitride
Great river for next-generation high-frequency, high-power transistors because it can operate at high temperatures. In the microwave market, many predict that GaN will be an almost ideal fit for mobile-infrastructure and WiMAX applications.

N-type and P-type in stock

Ask about GaN on silicon, GaN on ZnO, GaN on Germanium, GaN on Glass,
 GaN on AlN, GaN on Composite substrates, GaN on diamond, GaN on si,GaN on polysilicon carbide (SopSiC)

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Specs!

1. GaN epitaxial wafers consist of GaN layer on 6H-SiC substrate.  50 mm diam on axis, n-type, GaN thickness ~0.5 um 
2. GaN layer on sapphire, 50mm diameter on-axis, n-type, GaN thickness 0.5-10 um. 
3. GaN/AIN/SiC epitaxial wafer consisting of GaN layer on AIN layer on 6H silicon carbide. 50mm in diameter on-axis, n-type. GaN thickness ~(0.5-0.8) um. AIN thickness ~0.1um.
4. GaN/AIN/AI2O3 epitaxial wafer consists of GaN layer on AIN layer on sapphire. 50mm in diameter, on-axis, n-type, GaN thickness ~(0.5-0.8) um, AIN thickness ~0.1 um.