Indium Antimonide
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Gallium Arsenide   Gallium Antimonide (GaSb)  Indium Antimonide (InSb) Gallium Phosphide (GaP)  Indium Phosphide (InP)
InSb

Indium Antimonide Wafers 'Epitaxy Ready' Polished wafers

 Single crystals are grown in a pure fused silica system by the Czochralski method from multiple zone refined polycrystalline ingot.

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InSb - Indium Antimonide

 

Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that layer)

 

Item

Qty in

Price

Material

Orient.

Diam

Thck

Surf.

Source

 

Stock

$/unit

 

 

(mm)

(μm)

 

 

B717

11

 $ 432.00

undoped InSb:-

[100] ±0.2°

2"

450

P/E

 

8717

20

 $ 450.00

undoped InSb:-

[100] ±0.2°

2"

450

P/P

 

9430

55

 $ 244.80

n-type InSb:Te

[100]

2"

±2

 

 due 4/03

Si

Gallium Antimonide

SOI

GaAs

Gallium Phosphide

GaN

Ge

InP

Ultra-Thin Silicon

ZnO

SiC - Silicon Carbide

Thermal Oxide