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SOI Wafers
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Silicon wafers

Gallium Antimonide

Silicon on Insulator SOI

Gallium Arsenide

Gallium Phosphide

Gallium Nitride

Germanium

Indium Phosphide

Zinc Oxide

Silicon Carbide

Thermal Oxide

Cadmium Selenide

Cadmium Telluride

Zinc Sulphide

Zinc Sulfide

Zinch Telluride

III-V

New
Super-Thin Silicon
5um, 10um, 25um thicn

Wafer Dicing  * Indium Tin Oxide  * Float Zone *  Super-Thin & Flat Wafer Silicon 25um, 50um, 75um, 100um For MEMS

InSb

Indium Antimonide Wafers 'Epitaxy Ready' Polished wafers

 Single crystals are grown in a pure fused silica system by the Czochralski method from multiple zone refined polycrystalline ingot.

Electronic And Crystallographic Specifications-Get your quote your today!

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Diameter
Type  N       or        P
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Sides Polished  One-Side     Two-Side
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Lot #

Size

Specs

INSB5729

50.8 mm x 450 um

(100) N/Undoped cc: 4-7x1014 EPD <200, 2 pol Epi

INSB5728

50.8 mm x 450 um

(111)A ,N/Undpd cc: 4-7x1014 EPD <200, 2 pol Epi

INSB5885

50.8 mm x 450 um

(100) N/Te cc: 3-5x1017 EPD <200, 1 pol Epi

Silicon wafers

Gallium Antimonide

Silicon on Insulator SOI

Gallium Arsenide

Gallium Phosphide

Gallium Nitride

Germanium

Indium Phosphide

Zinc Oxide

Silicon Carbide

Thermal Oxide

Cadmium Selenide

Cadmium Telluride

Zinc Sulphide

Zinc Sulfide

Zinch Telluride

III-V