Silicon on Sapphire Wafer (SoS)

University Wafer Silicon Wafers and Semicondcutor Substrates Services
University Silicon Wafer for Production

Silicon-on-Insulator (SoS)

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Silicon on Sapphire (SOS) Specification

Below are just some of the SoS wafers that we can make.

Please provide us with your specs/quantity for an immediate quote.

See bottom for more SoS inventory.

Substrate:
Material: 99.996% high purity monocrystalline Al2O3
Orientation: R-Plane (1-102)
Off-cut Non Off-cut: +/- 0.5 degree
Diameter: 100 +/- 0.1mm
Thickness: 460 +/- 20 microns
Primary Flat: 32.5 +/- 2.5 mm; 45 +/- 1 degree. From C on R
Front Surface: Finish EPI ready polished Ra </= 0.3 nm
Bow: </= 20 microns
TTV: </= 15 microns
Warp: </= 20 microns
Flatness (TIR): </= 12 microns
Back Surface: finish as lapped (Ra=0.6 +/- 0.2 um)
Laser Marking: None
Packaging: Atmosphere Argon vacuum packed in class 100 clean room
Additional Notes:
Metallic Contamination: <5E10 atoms/cm^2 by VPD for Ca, Na, K, Cr, Zn, Fe, Cu and Ni
LPD: </=40 @ >/=0.2 microns
Edge Exclusion: 3 mm

EPI Layer:
Thickness of Silicon (100) EPI Layer center point: 600 +/- 60nm
Film Crystallinity & Surface Quality: in accordance with SEMI M4-1296
Resistivity: >/= 100 ohm-cm (Undoped)
Microparticulate density (for particles greater than 2 microns);< 2 per cm^-2

 

Silicon-on-Sapphire (SoS) Inventory

Please let us know if you can use or if you need something else.

Dia. Ori Si film Pol Res Thick
4'' R+/-0.5deg 0.6um+/-10% P/E >100 Ohm.cm 460 um
4'' R+/-0.5deg 0.6um+/-10% P/E <100 Ohm.cm 460 um
4'' R+/-0.5deg 0.75um+/-10% P/E >100 Ohm.cm 460 um
4'' R+/-0.5deg 0.80um+/-10% P/E >100 Ohm.cm 460 um
4'' R+/-0.5deg 0.85um+/-10% P/E >100 Ohm.cm 460 um
4'' R+/-0.5deg 3000nm+/-5% P/E >100 Ohm.cm 460 um
4'' R+/-0.5deg Dummy-grade P/E Dummy-grade 460 um
6'' R+/-0.2deg 100+/-10nm P/E >100 Ohm.cm 460 um
          460 um
4'' R+/-0.5deg 100+/-10nm P/P >100 Ohm.cm 460 um
4'' R+/-0.5deg 230+/-10nm P/P >100 Ohm.cm 460 um
4'' R+/-0.5deg 600nm+/-10% P/P >100 Ohm.cm 460 um
4'' R+/-0.5deg 1500nm+/-10% P/P <100 Ohm.cm 460 um
4'' R+/-0.5deg 3000nm+/-5% P/P >100 Ohm.cm 460 um

 

Silicon-on-Insulator (SOS) Wafers Technology Applications:

  • analog-to-digital converters
  • monolithic digital isolation buffers
  • SOS-CMOS image sensor arrays
  • patch-clamp amplifiers
  • energy harvesting devices
  • three-dimensional (3D) integration with no galvanic connections
  • charge pumps
  • temperature sensors