Engineering leaders frequently utilize Focused Ion Beam tools for nano-scale prototyping. One client recently asked about verifying electrical properties:
Question: "Do you sell wafers with structures for taking 4-point measurement to measure resistance of a Focused Ion Beam deposited line?"
Answer: Yes. We provide 4-point probe measurement standards on 100mm substrates, featuring laser-etched markers to locate sub-micron FIB structures.
Focused Ion Beam (FIB) technology utilizes a beam of ions (commonly Gallium) to remove, deposit, or analyze materials at a sub-micron scale.
Sample "charging" is the primary challenge in FIB applications. If a substrate is non-conductive, ions accumulate on the surface, deflecting the beam. The following substrates are most commonly utilized:
| Substrate Type | Technical Advantage |
|---|---|
| Low Resistivity Silicon | Industry standard for circuit editing; provides an immediate discharge path. |
| Gallium Arsenide (GaAs) | Standard for high-frequency device analysis and vertical tunnel diode development. |
| Conductive Coated Glass | ITO or metal-coated quartz allows for milling on otherwise insulating materials. |
| Thermal Oxide Wafers | Offers an insulating base layer for electrical testing of FIB-deposited lines. |
FIB systems are fundamental tools in semiconductor microfabrication, utilized for:
Pro Tip: When working with insulating substrates like Sapphire, a thin layer of Carbon or Gold must be sputtered onto the surface to ensure beam stability.